JP2005183943A5 - - Google Patents
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- Publication number
- JP2005183943A5 JP2005183943A5 JP2004339608A JP2004339608A JP2005183943A5 JP 2005183943 A5 JP2005183943 A5 JP 2005183943A5 JP 2004339608 A JP2004339608 A JP 2004339608A JP 2004339608 A JP2004339608 A JP 2004339608A JP 2005183943 A5 JP2005183943 A5 JP 2005183943A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004339608A JP2005183943A (ja) | 2003-11-25 | 2004-11-24 | 半導体素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003393320 | 2003-11-25 | ||
| JP2004339608A JP2005183943A (ja) | 2003-11-25 | 2004-11-24 | 半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005183943A JP2005183943A (ja) | 2005-07-07 |
| JP2005183943A5 true JP2005183943A5 (OSRAM) | 2005-11-04 |
Family
ID=34797149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004339608A Pending JP2005183943A (ja) | 2003-11-25 | 2004-11-24 | 半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005183943A (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101293566B1 (ko) | 2007-01-11 | 2013-08-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| JP5646139B2 (ja) | 2008-09-26 | 2014-12-24 | 株式会社東芝 | 半導体装置 |
| JPWO2010110252A1 (ja) * | 2009-03-27 | 2012-09-27 | 住友電気工業株式会社 | Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法 |
| KR20110133542A (ko) * | 2009-03-27 | 2011-12-13 | 스미토모덴키고교가부시키가이샤 | Ｍｏｓｆｅｔ 및 ｍｏｓｆｅｔ의 제조 방법 |
| CN102171828A (zh) * | 2009-04-10 | 2011-08-31 | 住友电气工业株式会社 | 绝缘栅双极型晶体管 |
| CA2739576A1 (en) | 2009-04-10 | 2010-10-14 | Sumitomo Electric Industries, Ltd. | Insulated gate field effect transistor |
| JP5817204B2 (ja) * | 2011-04-28 | 2015-11-18 | トヨタ自動車株式会社 | 炭化珪素半導体装置 |
| US9214516B2 (en) * | 2012-03-30 | 2015-12-15 | Hitachi, Ltd. | Field effect silicon carbide transistor |
| JP6230323B2 (ja) | 2013-08-01 | 2017-11-15 | 株式会社東芝 | 半導体装置 |
| US9214572B2 (en) * | 2013-09-20 | 2015-12-15 | Monolith Semiconductor Inc. | High voltage MOSFET devices and methods of making the devices |
| JP2015099845A (ja) | 2013-11-19 | 2015-05-28 | 住友電気工業株式会社 | 半導体装置 |
| CN106574397B (zh) | 2014-08-01 | 2019-10-22 | 住友电气工业株式会社 | 外延晶片及其制造方法 |
| CN106796886B (zh) * | 2014-08-29 | 2020-05-01 | 住友电气工业株式会社 | 碳化硅半导体器件和用于制造碳化硅半导体器件的方法 |
| JP6301795B2 (ja) * | 2014-09-19 | 2018-03-28 | 株式会社東芝 | 半導体装置 |
| JP2019176194A (ja) * | 2019-07-22 | 2019-10-10 | ローム株式会社 | 半導体装置 |
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2004
- 2004-11-24 JP JP2004339608A patent/JP2005183943A/ja active Pending