JP2005142481A5 - - Google Patents

Download PDF

Info

Publication number
JP2005142481A5
JP2005142481A5 JP2003379835A JP2003379835A JP2005142481A5 JP 2005142481 A5 JP2005142481 A5 JP 2005142481A5 JP 2003379835 A JP2003379835 A JP 2003379835A JP 2003379835 A JP2003379835 A JP 2003379835A JP 2005142481 A5 JP2005142481 A5 JP 2005142481A5
Authority
JP
Japan
Prior art keywords
film
semiconductor device
vapor deposition
chemical vapor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003379835A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005142481A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003379835A priority Critical patent/JP2005142481A/ja
Priority claimed from JP2003379835A external-priority patent/JP2005142481A/ja
Priority to US10/983,672 priority patent/US7259073B2/en
Priority to EP04026578A priority patent/EP1530233A3/en
Priority to CNB2004100883504A priority patent/CN100397610C/zh
Publication of JP2005142481A publication Critical patent/JP2005142481A/ja
Priority to US11/534,862 priority patent/US20070018276A1/en
Publication of JP2005142481A5 publication Critical patent/JP2005142481A5/ja
Pending legal-status Critical Current

Links

JP2003379835A 2003-11-10 2003-11-10 半導体装置の製造方法 Pending JP2005142481A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003379835A JP2005142481A (ja) 2003-11-10 2003-11-10 半導体装置の製造方法
US10/983,672 US7259073B2 (en) 2003-11-10 2004-11-09 Semiconductor device and method of manufacturing the same
EP04026578A EP1530233A3 (en) 2003-11-10 2004-11-09 Semiconductor device and method of manufacturing the same
CNB2004100883504A CN100397610C (zh) 2003-11-10 2004-11-10 半导体器件及其制造方法
US11/534,862 US20070018276A1 (en) 2003-11-10 2006-09-25 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003379835A JP2005142481A (ja) 2003-11-10 2003-11-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005142481A JP2005142481A (ja) 2005-06-02
JP2005142481A5 true JP2005142481A5 (cg-RX-API-DMAC10.html) 2006-11-24

Family

ID=34431385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003379835A Pending JP2005142481A (ja) 2003-11-10 2003-11-10 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US7259073B2 (cg-RX-API-DMAC10.html)
EP (1) EP1530233A3 (cg-RX-API-DMAC10.html)
JP (1) JP2005142481A (cg-RX-API-DMAC10.html)
CN (1) CN100397610C (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060078560A1 (en) * 2003-06-23 2006-04-13 Neopharm, Inc. Method of inducing apoptosis and inhibiting cardiolipin synthesis
JP2009283488A (ja) * 2008-05-19 2009-12-03 Toshiba Corp 不揮発性メモリ及びその製造方法
WO2010065428A2 (en) * 2008-12-01 2010-06-10 Maxpower Semiconductor Inc. Mos-gated power devices, methods, and integrated circuits
US9159808B2 (en) * 2009-01-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Selective etch-back process for semiconductor devices
CN104979196B (zh) * 2014-04-01 2018-09-25 中芯国际集成电路制造(上海)有限公司 一种沟槽型半导体器件结构的制作方法
CN105118775B (zh) * 2015-08-18 2019-02-05 上海华虹宏力半导体制造有限公司 屏蔽栅晶体管形成方法
US10164982B1 (en) 2017-11-28 2018-12-25 Cyberark Software Ltd. Actively identifying and neutralizing network hot spots
CN107993976B (zh) * 2017-12-07 2020-07-14 德淮半导体有限公司 半导体装置及其制造方法
CN111354788B (zh) * 2020-03-24 2023-05-16 成都森未科技有限公司 一种深沟槽绝缘栅极器件及其制备方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
US4926235A (en) 1986-10-13 1990-05-15 Yoichi Tamaki Semiconductor device
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
EP0272491B1 (en) 1986-12-22 1999-07-28 Texas Instruments Incorporated Deep trench isolation with surface contact to substrate
JPH0223630A (ja) * 1988-07-12 1990-01-25 Seiko Epson Corp 半導体装置の製造方法
JPH0358470A (ja) * 1989-07-26 1991-03-13 Takehide Shirato 半導体装置
US5433794A (en) * 1992-12-10 1995-07-18 Micron Technology, Inc. Spacers used to form isolation trenches with improved corners
US5773871A (en) * 1993-06-24 1998-06-30 Northern Telecom Limited Integrated circuit structure and method of fabrication thereof
JPH0870101A (ja) * 1994-08-11 1996-03-12 Northern Telecom Ltd 集積回路コンデンサ構造およびその製造方法
JPH08288509A (ja) * 1995-04-14 1996-11-01 Sony Corp 半導体装置及びその製造方法
US5834811A (en) * 1996-06-17 1998-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Salicide process for FETs
US5751040A (en) * 1996-09-16 1998-05-12 Taiwan Semiconductor Manufacturing Company Ltd. Self-aligned source/drain mask ROM memory cell using trench etched channel
US5773821A (en) * 1996-10-15 1998-06-30 University Of Utah Research Foundation Radiological surveying as a method for mapping fossilized bone sites
KR100268930B1 (ko) * 1996-11-12 2000-10-16 김영환 박막트랜지스터의 구조 및 그 제조방법
US5763315A (en) * 1997-01-28 1998-06-09 International Business Machines Corporation Shallow trench isolation with oxide-nitride/oxynitride liner
JP3519579B2 (ja) * 1997-09-09 2004-04-19 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6960818B1 (en) 1997-12-30 2005-11-01 Siemens Aktiengesellschaft Recessed shallow trench isolation structure nitride liner and method for making same
US6165843A (en) * 1998-03-20 2000-12-26 Mosel Vitelic, Inc. Covered slit isolation between integrated circuit devices
US6037018A (en) * 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
JP2000077535A (ja) * 1998-09-02 2000-03-14 Hitachi Ltd 半導体装置及びその製造方法
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6248641B1 (en) * 1999-02-05 2001-06-19 United Microelectronics Corp. Method of fabricating shallow trench isolation
US6403445B1 (en) * 1999-04-06 2002-06-11 Advanced Micro Devices, Inc. Enhanced trench isolation structure
JP2001135718A (ja) * 1999-11-08 2001-05-18 Nec Corp トレンチ分離構造の作製方法
US6277697B1 (en) * 1999-11-12 2001-08-21 United Microelectronics Corp. Method to reduce inverse-narrow-width effect
TW469635B (en) * 2000-05-16 2001-12-21 Nanya Technology Corp Fabrication method of semiconductor memory cell transistor
JP2002237518A (ja) 2001-02-08 2002-08-23 Sony Corp 半導体装置及びその製造方法
KR100407567B1 (ko) * 2001-04-10 2003-12-01 삼성전자주식회사 덴트 없는 트렌치 격리 형성 방법
US6593192B2 (en) * 2001-04-27 2003-07-15 Micron Technology, Inc. Method of forming a dual-gated semiconductor-on-insulator device
US6645795B2 (en) * 2001-05-03 2003-11-11 International Business Machines Corporation Polysilicon doped transistor using silicon-on-insulator and double silicon-on-insulator
KR100389031B1 (ko) * 2001-06-19 2003-06-25 삼성전자주식회사 트렌치 소자분리 구조를 가지는 반도체 소자의 제조방법
US6566200B2 (en) * 2001-07-03 2003-05-20 Texas Instruments Incorporated Flash memory array structure and method of forming
DE10143997B4 (de) * 2001-09-07 2006-12-14 Infineon Technologies Ag Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Isolationsgraben
TW533536B (en) * 2002-04-24 2003-05-21 Nanya Technology Corp Manufacturing method of shallow trench isolation
US6653203B1 (en) * 2002-05-23 2003-11-25 Taiwan Semiconductor Manufacturing Company Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenches
US6750117B1 (en) * 2002-12-23 2004-06-15 Macronix International Co., Ltd. Shallow trench isolation process
JP2004207564A (ja) * 2002-12-26 2004-07-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
US6864152B1 (en) * 2003-05-20 2005-03-08 Lsi Logic Corporation Fabrication of trenches with multiple depths on the same substrate

Similar Documents

Publication Publication Date Title
JPH10189966A5 (cg-RX-API-DMAC10.html)
JP2003318405A5 (cg-RX-API-DMAC10.html)
JP2006524436A5 (cg-RX-API-DMAC10.html)
JP2008066689A (ja) 半導体素子の製造方法
JP2000091535A5 (cg-RX-API-DMAC10.html)
JP2006013487A5 (cg-RX-API-DMAC10.html)
CN114220736B (zh) 沟槽的形成方法、半导体器件的制备方法及半导体器件
JPH1174527A5 (cg-RX-API-DMAC10.html)
JP2004047608A5 (cg-RX-API-DMAC10.html)
JP2006013136A5 (cg-RX-API-DMAC10.html)
CN110690218B (zh) 半导体器件及其形成方法
TWI226667B (en) Transistor fabrication method
TW200501317A (en) Method of forming a contact hole and method of forming a semiconductor device
CN100353530C (zh) Soi晶圆上的半导体组件的制造方法
TWI497713B (zh) 絕緣體的製作方法
CN108630549B (zh) 半导体器件及其形成方法
TWI550693B (zh) 圖案化非依電性記憶體（ｎｖｍ）之閘極堆疊並同時在非ｎｖｍ區域中進行蝕刻之技術
JP2002026309A (ja) 電界効果型トランジスタの製造方法
KR20070069405A (ko) 반도체소자의 제조방법
US10263089B2 (en) Transistor including active layer having through holes and manufacturing method thereof
TWI882835B (zh) 形成晶圓結構的方法及由其形成的晶圓結構
JPS5764927A (en) Manufacture of semiconductor device
KR100772833B1 (ko) 반도체 소자 및 반도체 소자의 제조 방법
CN103560109A (zh) 多接触孔的形成方法
KR100541703B1 (ko) 이중 층 패터닝을 이용한 반도체 소자의 게이트 형성방법