JP2005123577A - 半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物 - Google Patents

半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物 Download PDF

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Publication number
JP2005123577A
JP2005123577A JP2004228853A JP2004228853A JP2005123577A JP 2005123577 A JP2005123577 A JP 2005123577A JP 2004228853 A JP2004228853 A JP 2004228853A JP 2004228853 A JP2004228853 A JP 2004228853A JP 2005123577 A JP2005123577 A JP 2005123577A
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JP
Japan
Prior art keywords
carboxylic acid
removal rate
weight
chemical mechanical
mechanical planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004228853A
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English (en)
Japanese (ja)
Inventor
Zhendong Liu
チェントン・リウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2005123577A publication Critical patent/JP2005123577A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
JP2004228853A 2003-08-05 2004-08-05 半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物 Pending JP2005123577A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/634,964 US7300603B2 (en) 2003-08-05 2003-08-05 Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

Publications (1)

Publication Number Publication Date
JP2005123577A true JP2005123577A (ja) 2005-05-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004228853A Pending JP2005123577A (ja) 2003-08-05 2004-08-05 半導体ウェーハにおけるエロ−ジョンを低減させるためのケミカルメカニカルプラナリゼーション組成物

Country Status (7)

Country Link
US (1) US7300603B2 (US07300603-20071127-C00001.png)
EP (1) EP1505134B1 (US07300603-20071127-C00001.png)
JP (1) JP2005123577A (US07300603-20071127-C00001.png)
KR (1) KR20050016171A (US07300603-20071127-C00001.png)
CN (1) CN1317742C (US07300603-20071127-C00001.png)
DE (1) DE602004012357T2 (US07300603-20071127-C00001.png)
TW (1) TWI365906B (US07300603-20071127-C00001.png)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096253A (ja) * 2005-09-02 2007-04-12 Fujimi Inc 研磨用組成物
JP2007142377A (ja) * 2005-10-21 2007-06-07 Hitachi Chem Co Ltd 銅及び銅合金用研磨剤並びにそれを用いた研磨方法
WO2008102672A1 (ja) * 2007-02-20 2008-08-28 Sumitomo Electric Industries, Ltd. 研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法
WO2009005143A1 (ja) * 2007-07-05 2009-01-08 Hitachi Chemical Co., Ltd. 金属膜用研磨液及び研磨方法
JP2013214786A (ja) * 2005-11-01 2013-10-17 Hitachi Chemical Co Ltd 銅膜及び絶縁材料膜用研磨材及び研磨方法
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7181476B2 (en) * 2003-04-30 2007-02-20 Oracle International Corporation Flashback database
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US9202709B2 (en) 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN102627916B (zh) * 2012-03-23 2014-09-03 江苏中晶科技有限公司 具有强化功能的玻璃抛光液
TWI611049B (zh) * 2014-10-21 2018-01-11 卡博特微電子公司 腐蝕抑制劑及相關組合物及方法
US9593261B2 (en) * 2015-02-04 2017-03-14 Asahi Glass Company, Limited Polishing agent, polishing method, and liquid additive for polishing
CN110434680A (zh) * 2019-07-19 2019-11-12 大连理工大学 一种螺旋桨的化学机械抛光液及抛光方法

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JP2000315667A (ja) * 1999-04-28 2000-11-14 Kao Corp 研磨液組成物
JP2000323444A (ja) * 1999-05-10 2000-11-24 Kao Corp 研磨液組成物
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2001247853A (ja) * 2000-02-11 2001-09-14 Fujimi Inc 研磨用組成物
JP2002313758A (ja) * 2001-04-18 2002-10-25 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法

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US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
CA2342332A1 (en) 1998-08-31 2000-03-09 Hiroki Terazaki Abrasive liquid for metal and method for polishing
CN1126152C (zh) * 1998-08-31 2003-10-29 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
EP1833085A1 (en) 1998-12-28 2007-09-12 Hitachi Chemical Company, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
CN1161826C (zh) * 1999-08-26 2004-08-11 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
JP4505891B2 (ja) 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6485355B1 (en) * 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
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JP2000315667A (ja) * 1999-04-28 2000-11-14 Kao Corp 研磨液組成物
JP2000323444A (ja) * 1999-05-10 2000-11-24 Kao Corp 研磨液組成物
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2001247853A (ja) * 2000-02-11 2001-09-14 Fujimi Inc 研磨用組成物
JP2002313758A (ja) * 2001-04-18 2002-10-25 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096253A (ja) * 2005-09-02 2007-04-12 Fujimi Inc 研磨用組成物
JP2007142377A (ja) * 2005-10-21 2007-06-07 Hitachi Chem Co Ltd 銅及び銅合金用研磨剤並びにそれを用いた研磨方法
JP2013214786A (ja) * 2005-11-01 2013-10-17 Hitachi Chemical Co Ltd 銅膜及び絶縁材料膜用研磨材及び研磨方法
WO2008102672A1 (ja) * 2007-02-20 2008-08-28 Sumitomo Electric Industries, Ltd. 研磨スラリーおよびその製造方法、ならびに窒化物結晶体およびその表面研磨方法
JP5287720B2 (ja) * 2007-07-05 2013-09-11 日立化成株式会社 金属膜用研磨液及び研磨方法
JP2013062516A (ja) * 2007-07-05 2013-04-04 Hitachi Chemical Co Ltd 金属膜用研磨液及び研磨方法
CN102352187A (zh) * 2007-07-05 2012-02-15 日立化成工业株式会社 金属膜用研磨液及研磨方法
WO2009005143A1 (ja) * 2007-07-05 2009-01-08 Hitachi Chemical Co., Ltd. 金属膜用研磨液及び研磨方法
US8609541B2 (en) 2007-07-05 2013-12-17 Hitachi Chemical Co., Ltd. Polishing slurry for metal films and polishing method
JP2014160827A (ja) * 2007-07-05 2014-09-04 Hitachi Chemical Co Ltd 金属膜用研磨液及び研磨方法
US8901002B2 (en) 2007-07-05 2014-12-02 Hitachi Chemical Company, Ltd. Polishing slurry for metal films and polishing method
CN102352187B (zh) * 2007-07-05 2015-03-18 日立化成株式会社 金属膜用研磨液及研磨方法
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP

Also Published As

Publication number Publication date
EP1505134A1 (en) 2005-02-09
CN1590487A (zh) 2005-03-09
KR20050016171A (ko) 2005-02-21
DE602004012357D1 (de) 2008-04-24
TW200512280A (en) 2005-04-01
DE602004012357T2 (de) 2009-04-02
US7300603B2 (en) 2007-11-27
TWI365906B (en) 2012-06-11
EP1505134B1 (en) 2008-03-12
US20050029491A1 (en) 2005-02-10
CN1317742C (zh) 2007-05-23

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