CN1590487A - 降低半导体晶片磨蚀的化学机械磨平组合物 - Google Patents
降低半导体晶片磨蚀的化学机械磨平组合物 Download PDFInfo
- Publication number
- CN1590487A CN1590487A CNA2004100558404A CN200410055840A CN1590487A CN 1590487 A CN1590487 A CN 1590487A CN A2004100558404 A CNA2004100558404 A CN A2004100558404A CN 200410055840 A CN200410055840 A CN 200410055840A CN 1590487 A CN1590487 A CN 1590487A
- Authority
- CN
- China
- Prior art keywords
- composition
- weight
- carboxylic acid
- chemical machinery
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000126 substance Substances 0.000 title claims abstract description 36
- 239000000203 mixture Substances 0.000 title claims description 124
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 235000012431 wafers Nutrition 0.000 title description 22
- 230000003628 erosive effect Effects 0.000 title description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 239000010949 copper Substances 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005498 polishing Methods 0.000 claims description 40
- 239000003082 abrasive agent Substances 0.000 claims description 38
- 150000005846 sugar alcohols Polymers 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229920001444 polymaleic acid Polymers 0.000 claims description 19
- 239000012964 benzotriazole Substances 0.000 claims description 13
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229920001519 homopolymer Polymers 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 abstract description 3
- 239000006061 abrasive grain Substances 0.000 abstract description 2
- 239000003112 inhibitor Substances 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 53
- 238000005299 abrasion Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 239000002002 slurry Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 13
- 239000000178 monomer Substances 0.000 description 12
- -1 platinum metals Chemical class 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 229960001866 silicon dioxide Drugs 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 150000003839 salts Chemical group 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000007334 copolymerization reaction Methods 0.000 description 5
- 239000003352 sequestering agent Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229920005830 Polyurethane Foam Polymers 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000013530 defoamer Substances 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011496 polyurethane foam Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- DWNBOPVKNPVNQG-LURJTMIESA-N (2s)-4-hydroxy-2-(propylamino)butanoic acid Chemical compound CCCN[C@H](C(O)=O)CCO DWNBOPVKNPVNQG-LURJTMIESA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XUDBVJCTLZTSDC-UHFFFAOYSA-N 2-ethenylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C=C XUDBVJCTLZTSDC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 150000000703 Cerium Chemical class 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 229920000805 Polyaspartic acid Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 108010020346 Polyglutamic Acid Proteins 0.000 description 1
- 108010039918 Polylysine Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 229930182470 glycoside Natural products 0.000 description 1
- 150000002338 glycosides Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000001261 hydroxy acids Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- APLYTANMTDCWTA-UHFFFAOYSA-L magnesium;phthalate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O APLYTANMTDCWTA-UHFFFAOYSA-L 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
一种含水化学机械磨平组合物包括用于促进阻隔层去除的氧化剂和磨料。缓蚀剂降低了互连金属的去除。该组合物具有包含至少一种含至少两个羧酸官能度的聚合物重复单元的羧酸聚合物,pH值低于或等于4,在磨盘压力为13.8千帕下,氮化钽去除速率为铜去除速率的至少80%。
Description
技术领域
本公开内容涉及半导体晶片的化学机械磨平(CMP),更具体地说,涉及能去除半导体晶片阻隔材料的同时又对存在的底层介电层有低的磨蚀的化学机械磨平(抛光)组合物以及除去半导体晶片阻隔材料的磨平方法。
背景技术
半导体工业依赖于半导体晶片上形成的集成电路中金属与金属间的相互连接。这些互连的金属如铝、铜、金、镍和铂族金属、银、钨、以及它们的合金具有很低的电阻率。铜金属连接具有优良的导电率且成本低廉。由于铜是高度溶于许多介电材料如二氧化硅或二氧化硅的掺杂变体中的,因此集成电路制造者通常涂一层扩散阻隔层以阻止铜向介电层扩散。例如,保护介电层的阻隔层包括钽、氮化钽、钽-氮化硅、钛、氮化钛、钛-氮化硅、钛-氮化钛、钛-钨、钨、氮化钨,以及钨-氮化硅。
制造芯片时,采用CMP工艺使半导体基体在沉积金属连接层后得以磨平。一般来说,抛光工艺采用“第一步”淤浆专门用来迅速去除金属连接。其后,CMP工艺还包括“第二步”淤浆以去除阻隔层。一般第二步淤浆能选择性去除阻隔层而不会对连接结构的物理结构或电性能产生负面影响。除此以外,第二步淤浆还应对介电质有低磨蚀速率。磨蚀是指在CMP加工期间由于去除某部分介电层而在介电层表面上形成的不需要的凹进部分。发生在邻近沟槽的金属的磨蚀会引起电路连接方面的尺寸缺陷。这类缺陷会使经电路连接的电信号的传输发生衰减,并对后续制作造成损害。阻隔层的去除速率对金属连接或介电层的去除速率之比通称为选择比。对本说明书来说,去除速率是指以单位时间厚度变化所表示的去除速率,如每分钟埃。
通常,去除阻隔层的CMP组合物要求有较高的磨料浓度如在流体CMP组合物中至少7.5重量%的磨料以去除阻隔材料。然而,这种高浓度磨料淤浆往往会使介电层磨蚀速率过高而不符合要求。除此之外,高浓度磨料还会导致低k介电层从半导体晶片上剥离或脱层。而且,低k介电层的剥离或脱层在压力为21.7千帕(3磅/平方英寸)和以上时还会引起更大的问题。
Uchida等人的欧洲专利EP1150341介绍了用于CMP工艺中的CMP组合物,该组合物包含氧化剂、氧化金属蚀刻剂、磨料、保护性成膜剂,其中成膜剂包含羧酸聚合物和增溶剂。该组合物是用于第一步铜的去除的;因而它不能有效地去除阻隔层,同时又能降低对介电层的磨蚀。
该组合物仍不能满足对水性CMP组合物能选择性地去除钽阻隔层的同时又降低时介电材料磨蚀的要求。此外,还需要能从已构图的晶片上去除阻隔层的缺陷率低的CMP组合物。
发明内容
本发明提供了一种水性化学机械磨平组合物,该组合物包含:促进阻隔层去除的氧化剂;磨料;降低金属相互连接去除的缓蚀剂;以及包含具有至少一种含至少两个羧酸官能度的聚合物重复单元的羧酸聚合物;其中化学机械磨平组合物的pH值低于或等于4,在磨盘压力为13.8千帕时氮化钽去除速率为铜去除速率的至少80%。
此外,本发明还包括磨平半导体晶片的方法,该方法包括:将水性化学机械磨平组合物施加于晶片上,其中化学机械磨平组合物包含具有至少一种含至少两个羧酸官能度的聚合物重复单元的羧酸聚合物、磨料和限制相互连接金属去除的缓蚀剂,该组合物的pH值低于或等于4;对半导体晶片进行抛光,其中化学机械磨平组合物对氮化钽的去除速率在磨盘压力为13.8千帕时为铜去除速率的至少80%。
附图说明
图1是分别表示阻隔层、相互连接金属和介电层的去除速率与聚马来酸浓度(重量%)之间的关系曲线图;
图2是分别表示对10微米/10微米、0.25微米/0.25微米、7微米/3微米和9微米/1微米结构特征的磨蚀与聚马来酸浓度(重量%)之间的关系曲线图。
图3是在铜晶片上用碱性淤浆与用含羧酸聚合物的酸性淤浆进行磨平处理的缺陷率比较。
具体实施方式
本CMP组合物是一种适用于在制造各种半导体晶片时去除阻隔层,同时又对介电材料的磨蚀速率降低的组合物。该化学机械磨平组合物包含在pH值小于4的酸性状态下起作用、并能降低对介电材料的磨蚀的羧酸聚合物。具体地说,羧酸聚合物包含至少一种含至少两个羧酸官能度的聚合物重复单元。该CMP组合物是一种去除阻隔层,对介电材料磨蚀降低的、且有可控的铜去除速率的组合物。通常用于集成电路的介电材料包括:由硅烷衍生的含氧化硅材料如正硅酸四乙基酯(TEOS),低k和/或超低k有机材料,CoralCVD SiOC(购自Novellus),BLACK DIAMONDCVD SiOC(购自Applied Materials),致密的SiLK(纺制介电材料)和多孔SILK(纺制介电材料)(购自Dow Chemicals),ZIRKON(纺制的多孔SiOC,购自Shipley),AURORACVD SiOC(购自ASML以及TEFLON聚四氟乙烯(购自DuPont)。
用于CMP组合物中的羧酸聚合物优选是水溶性的。该羧酸聚合物优选是至少一种具有烯属不饱和性的羧酸单体与至少一种以游离酸或其盐形态的羧酸基团的聚合产物。盐形态的实例包括碱土金属盐和碱金属盐。
在一个实施方案中,羧酸聚合物是由至少一种具有至少两个羧酸官能度的羧酸单体的聚合产物所构成的,不存在其它共聚单体,即该羧酸聚合物是均聚物。在另一个实施方案中,羧酸聚合物是由至少一种具有至少两个羧酸官能度的羧酸单体与至少一种可共聚单体或可共聚的聚合物的共聚产物所构成的。对本说明书来说,共聚物包括由两种或两种以上单体形成的聚合物。适用的可共聚单体包括:例如烯烃单体、苯乙烯单体、氯乙烯单体、偏氯乙烯单体、丙烯腈单体以及包含至少一种上述可共聚单体的混合物。适用的可共聚的聚合物包括:例如聚酯、聚碳酸酯类、聚酰胺、聚烯烃类、聚苯乙烯类、聚缩醛、聚丙烯酸类、聚碳酸酯类、聚酰胺酰亚胺、聚芳基化合物、聚氨酯,聚芳基砜、聚醚砜、聚亚芳基硫醚、聚氯乙烯、聚砜、聚醚酰亚胺、聚四氟乙烯、聚醚酮、聚醚醚酮以及包含至少一种上述聚合物的混合物。必须指出,当羧酸聚合物是至少一种羧酸单体与至少一种可共聚单体或可共聚的聚合物的共聚产物时,得到的羧酸聚合物仍是水溶性的。
在一个例证性实施方案中,羧酸聚合物中除了在聚合物主链中有羧酸官能度外,还可含有至少一个羧酸官能基团作为聚合物主链上的取代基。因此,该羧酸聚合物在聚合物主链中和在聚合物主链的取代基中都可有羧酸官能基团。
羧酸聚合物的数均分子量(Mn)为200-2000000克/摩尔(g/gmole)是合乎要求的。在此范围内,采用数均分子量大于或等于400克/摩尔的羧酸聚合物是理想的。Mn低于或等于100000克/摩尔,优选低于或等于50000克/摩尔也是理想的。对本说明书来说,分子量是采用凝胶渗透色谱法测定的。
羧酸聚合物的使用量为0.01-5重量%是合乎要求。对本说明书来说,所有重量百分比都是相对于CMP组合物的总重量确定的,除非另有说明。在此范围内,羧酸聚合物的使用量大于或等于0.05重量%,优选大于或等于0.1重量%是理想的。使用量为低于或等于3重量%,优选低于或等于2重量%也是理想的。
适用的羧酸聚合物包括:例如聚天冬氨酸、聚谷氨酸、聚赖氨酸、聚苹果酸、聚甲基丙烯酸、聚甲基丙烯酸铵、聚甲基丙烯酸钠、聚酰氨酸、聚马来酸、聚衣康酸、聚富马酸、聚(对苯乙烯羧酸)、聚丙烯酸、聚丙烯酰胺、氨基聚丙烯酸胺、聚丙烯酸铵、聚丙烯酸钠、聚酰氨酸、聚酰胺铵、聚酰胺钠、聚二羧乙酸以及包含至少一种上述聚合物的混合物。
优选的羧酸聚合物是具有下述式(I)结构的聚马来酸:
一种优选的商购聚马来酸是购自Rohm and Haas的Optidose4210。聚马来酸在所有pH值下都是稳定的,在配制期间不会沉析。任选的是,聚马来酸可经部分或完全地中和。适用的中和离子是铵离子、碱土金属或碱金属离子,其中包括例如锂、钠、钾、铷、铯、镁、钙以及包含至少一种上述离子的混合物。包含这些羧酸聚合物的CMP组合物能降低对介电材料的腐蚀速率,而仍能保持阻隔层的去除速率。
CMP组合物包含以“机械”方式去除阻隔层的磨料。该磨料优选是胶态磨料。磨料的实例包括:无机氧化物、金属硼化物、金属碳化物、金属氮化物或包含至少一种上述磨料的混合物。适用的无机氧化物包括例如二氧化硅(SiO2)、氧化铝(Al2O3)、氧化锆(ZrO2)、氧化铈(CeO2)、二氧化锰(MnO2)以及包含至少一种上述磨料氧化物的混合物。根据需要,也可采用这些无机氧化物的改性形态如涂敷聚合物的无机氧化物微粒。适用的金属碳化物、硼化物和氮化物包括例如碳化硅、氮化硅、碳氮化硅(SiCN)、碳化硼、碳化钨、碳化锆、硼化铝、碳化钽、碳化钛以及包含至少一种上述金属碳化物、硼化物和氮化物的混合物。根据需要,也可采用金刚石作为磨料。其它磨料还包括聚合物微粒和涂敷聚合物的微粒。优选的磨料是二氧化硅。
磨料的使用量0.05重量%-15重量%是合乎要求的。在此范围内,磨料使用量大于或等于0.1重量%、优选大于或等于0.5重量%是理想的。磨料使用量低于或等于10重量%,优选低于或等于5重量%也是理想的。
为了防止金属过度地形成凹形和对电介质的过度磨蚀,磨料的平均粒度应小于或等于150纳米。对本说明书来说,粒度是指磨料的平均粒度。采用平均粒度小于或等于100纳米,优选小于或等于75纳米而更优选小于或等于50纳米的磨料是理想的。采用平均粒度小于或等于50纳米的二氧化硅有利于使介电材料的磨蚀和金属凹形的形成降至最低。此外,优选的磨料还可包括添加剂如改善磨料在酸性pH值范围内的稳定性的分散剂。一种这样的磨料是购自Clariant S.A.(Pateanx,France)的胶态二氧化硅。
当磨料的粒度小于或等于50纳米时,业已发现,CMP组合物能以高速率有利地去除阻隔层,同时又能降低对低k和超低k介电层的磨蚀。该CMP组合物也证明,降低组合物中磨料粒度能大大地减少凹形的形成和降低对介电层的磨蚀。在另一实施方案中,对含有平均粒度小于或等于50纳米的磨料的CMP组合物来说,其粒度分布可至少是呈单众数的。根据需要,粒度分布也可以是呈双众数或三众数的。
如果CMP组合物不含磨料,则对化学机械磨平(CMP)工艺来说,磨盘的选择和调节就变得更为重要。例如,对某些不含二氧化硅的组合物来说,固定的磨盘可提高抛光性能。
采用氧化剂,有利于阻隔层如钽和氮化钽的去除速率最优化。适用的氧化剂包括:例如过氧化氢、单过硫酸盐、磺酸盐、过邻苯二甲酸镁,过乙酸及其它过酸、过硫酸盐、溴酸盐,过磺酸盐、硝酸盐、铁盐、铈盐、锰(Mn)(III)、Mn(IV)和Mn(VI)盐、银盐、铜盐、铬盐、钴盐、卤素、次氯酸盐以及包含至少一种上述氧化剂的混合物。优选的氧化剂是过氧化氢。必须指出,氧化剂应在使用前临时添加到CMP组合物中,在这种情况下氧化剂是单独包装的。氧化剂的添加量优选为0.1-10重量%,最优选用量为0.2-5重量%。
CMP组合物具有酸性pH值,以达到高的阻隔层去除速率,同时又能降低对介电层的磨蚀。用于相互连接的适用金属包括:例如铝、铝合金、铜、铜合金、金、金合金、镍、镍合金、铂族金属、铂族合金、银、银合金、钨和钨合金,或包含至少一种上述金属的混合物。优选的相互连接金属是铜。在使用氧化剂如过氧化氢的酸性CMP组合物和淤浆中,主要由于铜的氧化,因而铜的去除速率和静态蚀刻速率都是高的。为了降低相互连接金属的去除速率,CMP组合物可包含主缓蚀剂和任选次缓蚀剂。缓蚀剂的作用是降低氧化剂对相互连接金属的氧化。由于减少了相互连接金属凹形的形成,因此有利于改善抛光性能。
优选的缓蚀剂是苯并三唑(BTA)。在一个实施方案中,CMP组合物包含较多量的BTA缓蚀剂来降低相互连接金属的去除速率。缓蚀剂的用量为0.0025-6重量%。在此范围内,用量大于或等于0.025%,优选大于或等于0.25重量%是理想的。用量小于或等于4重量%,优选小于或等于1重量%也是理想的。当采用BTA时,BTA在CMP组合物中的用量受溶解度限制,其用量可高达约2重量%或者达到在CMP组合物中的饱和浓度。优选的BTA浓度为0.0025-2重量%。还可任选向CMP组合物添加辅助缓蚀剂。辅助缓蚀剂是表面活性剂如例如阴离子表面活性剂、非离子表面活性剂、两性表面活性剂及聚合物,或有机化合物如吡咯。例如,辅助缓蚀剂可包括咪唑、甲苯并三唑或它们与BTA结合的混合物。最优选的辅助缓蚀剂是甲苯并三唑与BTA结合的混合物。
CMP组合物还包含无机或有机pH调节剂以降低CMP组合物的pH值达到低于或等于4的酸性pH值。适用的无机pH调节剂包括:例如硝酸、硫酸、盐酸、磷酸以及包含至少一种上述无机pH调节剂的混合物。优选的pH调节剂是硝酸(HNO3)。
CMP组合物的pH值小于或等于4是合乎要求的。在此范围内,pH值大于或等于1,优选大于或等于1.5是理想的。pH值小于或等于3.5,优选小于或等于3也是理想的。对于CMP组合物的优选pH值范围为1-4,最优选pH值为2-3。
在pH值低于3时,即使CMP组合物中磨料的重量百分浓度较低,CMP组合物也具有较高的阻隔金属去除速率,同时对介电层有低的磨蚀速率。较低的磨料浓度,由于减少了不希望出现的磨料诱发的缺陷(如划痕)而能提高CMP工艺的抛光性能。例如,粒度小至约10纳米仍具有合乎要求的阻隔层去除速率,同时又能降低对介电层的磨蚀。通过采用较小粒度的磨料并以低浓度磨料配制CMP组合物能进一步降低对介电层的磨蚀。
任选的是,CMP组合物可包含螯合剂或络合剂来调节相对于阻隔金属去除速率的铜去除速率。螯合剂或络合剂通过与铜形成螯合的金属络合物而改善铜的去除速率。适用的螯合剂包括:例如羧酸、氨基羧酸及它们的衍生物以及包含至少一种上述螯合剂的混合物。优选的是,CMP组合物中螯合剂的用量为小于或等于2重量%(以CMP组合物总重量计)。任选的是,CMP组合物也可包含缓冲剂如各种有机酸和无机酸,在上述pH范围内pKa为1.5-小于3的氨基酸或它们的盐。任选的是,CMP组合物还可包含消泡剂如包括酯、环氧乙烷、醇、乙氧基化合物、硅化合物、氟化合物、醚、苷及它们的衍生物的非离子表面活性剂,以及包含至少一种上述表面活性剂的混合物。消泡剂也可以是两性表面活性剂。化学机械磨平组合物也可任选包含pH缓冲剂、抗微生物剂和消泡剂。
CMP组合物可通过CMP装置在低于21.7千帕(3磅/平方英寸)压力下进行磨平操作。优选的磨盘压力为3.5-21.7千帕(0.5-3磅/平方英寸)。在此范围内,压力低于或等于13.8千帕(2磅/平方英寸),更优选低于或等于10.3千帕(1.5磅/平方英寸)而最优选为低于或等于约6.9千帕(1磅/平方英寸)是有利的。低的CMP磨盘压力由于能减少划痕或其它不希望出现的抛光缺陷而能提高抛光性能并能减少易碎材料破碎的危险性。例如,低介电常数材料在高应力下容易破损和脱层。包含多官能羧酸聚合物的CMP组合物可达到对阻隔层和铜有高的去除速率同时又能降低对有机材料制的低k和超低k介电层的磨蚀。在一个例证性实施方案中,可将CMP组合物调整至达到对阻隔层有高的去除速率而不会对低k或超低k介电层产生明显的损害的有利程度。因此,为降低对具有各种宽度线条的已构图晶片的磨蚀,采用此种CMP组合物是有利的。
在磨盘压力为13.8千帕下,CMP组合物的氮化钽去除速率为铜去除速率的至少80%,磨盘压力是垂直于集成电路晶片并采用充填聚氨酯的多孔抛光盘测定的抛光盘压力计量的。用于测定选择性的特定抛光盘是IC1010TM充填聚氨酯的多孔抛光盘。优选的是,在磨盘压力为13.78千帕下,CMP组合物的氮化钽去除速率为铜的去除速率的至少80%,磨盘压力是垂直于集成电路晶片并采用充填聚氨酯的多孔抛光盘测定的抛光盘压力计量的。此外,该CMP组合物能使氮化钽的去除速率比铜的去除速率高三倍或五倍。
下面将通过实施例对本发明的一些实施方案作详细的说明。
实施例1
下面实施例中的CMP组合物中所采用的各种材料的名称列于表1。Klebosol PL150H25是购自Clariant的二氧化硅,平均粒度等于25纳米的二氧化硅微粒为30重量%、pH值为2-3。该样品中二氧化硅微粒已用水稀释至4重量%。
表1
名称 | 化学组成 |
BTA | 苯并三唑 |
Klebosol PL150H25 | 胶态二氧化硅 |
H2O2 | 过氧化氢 |
聚马来酸 | 每一重复单元有两个羧酸官能度的羧酸聚合物 |
本实验是测定CMP组合物在不同的组分浓度时的抛光性能。抛光实验是采用由Strasbaugh提供的6EC抛光设备进行的。抛光盘是Rodel,Inc.提供的IC1010TM。抛光盘在每次抛光前进行调整。抛光是在压力为6.9千帕(1磅/平方英寸)、抛光台转速为每分钟120转(rpm),载料盘转速为114rpm下进行的。CMP组合物供入速率(淤浆流速率)为200毫升/分钟。
在本实验中,用不同浓度的聚马来酸制备几种如表1所列的淤浆。每种组合物中其它组分浓度是相同的:Klebosol PL150H25为4重量%、BTA为0.6重量%、H2O2为0.5重量%及溶液的pH值为2.5。对照实施例用字母表示,CMP组合物用数字表示。表2列出了对氮化钽(TaN)、铜(Cu)、TEOS、CDO和SiCN的去除速率(RR)(埃/分钟)。
表2
组合物 | 聚马来酸(wt%) | TaN RR | Cu RR | TEOS RR | CDO RR | SiCN RR |
A | 0 | 1853 | 66 | 120 | 246 | 1108 |
1 | 0.015 | 1592 | 99 | 123 | 247 | 889 |
2 | 0.03 | 1803 | 109 | 123 | 202 | 751 |
3 | 0.05 | 1745 | 107 | 76 | 182 | 682 |
4 | 0.1 | 1840 | 100 | 104 | 113 | 463 |
5 | 0.25 | 1487 | 94 | 105 | 123 | 361 |
6 | 0.5 | 1236 | 100 | 111 | 100 | 303 |
将表2结果绘制成图1所示的曲线。图1图示了阻隔层和介电层的去除速率与聚马来酸浓度(重量%)之间的关系,曲线显示在浓度低于或等于0.1重量%时,聚马来酸浓度变化对TaN、铜和TEOS的去除速率没有明显的影响。然而,在浓度低于或等于0.1重量%时,CDO和SiCN的去除速率会随着聚马来酸浓度升高而下降。
使用表2所列各种CMP组合物测定具有各种不同宽度和密度的线条(称为结构)(见表3)的图形的构图晶片的抛光性能。表3列出了854TEOS构图晶片上线条宽度和线条之间的间隔。
表3
结构名称(线宽/间隔) | 密度 |
100μm/100μm | 50% |
50μm/50μm | 50% |
10μm/10μm | 50% |
7μm/3μm | 70% |
0.25μm/0.25μm | 50% |
9μm/1μm | 90% |
实施例2
在表4中,使用表2中对照组合物A抛光线条宽度和间隔如表3所列的854 TEOS构图晶片。分别在构图的中心(中央管芯)、构图中部(中部管芯)和构图的边缘(边缘管芯)读取数据。然后将读取的中心、中部和边缘的数据进行平均并报告于表4中。对100微米/100微米、50微米/50微米和10微米/10微米结构测得的数据反映凹形的形成,而对7微米/3微米、9微米/1微米和0.25微米/0.25微米结构测得的数据反映对层间介电层的磨蚀。这一实验是为测定CMP组合物改变组分浓度时的抛光性能。抛光实验是采用Mirra抛光装置(由Applied Materials提供)进行的。抛光盘是Rodel Inc.提供的IC1010TM。在每次试验前对抛光盘进行调整。抛光操作是在压力为6.9千帕(1磅/平方英寸)、抛光台转速为120转/分钟、载料盘转速为114转/分钟的条件下进行的。CMP组合物的供料速率(淤浆流速率)为200毫升/分钟。
表4所列数值代表以埃为单位的地形深度(topographic depth)。
表4
凹形 | 凹形 | 凹形 | 磨蚀 | 磨蚀 | 磨蚀 | |
100μm/100μm结构 | 50μm/50μm结构 | 10μm/10μm结构 | 7μm/3μm结构 | 9μm/1μm结构 | 0.25μm/0.25μm结构 | |
对照组合物A | 216 | 216 | 233 | 350 | 550 | 416 |
组合物4 | -33 | -100 | 258 | 100 | 366 | -33 |
表4所列数据表明,含0.1重量%聚马来酸的组合物4改进了对构图结构的磨蚀性能。对0.25微米/0.25微米结构和7微米/3微米结构的效果最为显著。组合物4所得的负结果表示磨平表面上铜的凸起。
实施例3
采用实施例2的抛光条件,添加组合物3对上述构图晶片重复上述试验。数据绘于图2,曲线分别表示10微米/10微米、0.25微米/0.25微米、7微米/3微米、和9微米/1微米结构的磨蚀特征。结果再一次确证聚马来酸显著地改进了磨蚀性能。
从这些实验可以看到,含有羧酸聚合物聚马来酸的CMP组合物不会影响或降低阻隔层的去除速率,而能降低对低k或超低k介电层的磨蚀损坏。CMP组合物有利于在低磨盘压力6.9千帕(1磅/平方英寸)下工作,并能在高地形集成电路器件的制造中使用,降低对介电层的磨蚀,同时保持高的阻隔层的去除速率。
实验数据也表明降低CMP组合物中磨料的粒度能大大地减少凹形的形成和降低对介电层的磨蚀。因此,平均粒度小于或等于9纳米的磨料会形成最佳的凹形和具有最佳的磨蚀性能。当平均粒度从25纳米降至9纳米时,即使TaN去除速率下降,也有足够高的去除速率进而有效实施去除阻隔的第二步CMP过程。
实施例4
该实验是在Applied Materials提供的Mirra型抛光装置上进行的。抛光盘是Rodel,Inc.提供的IC1010TM。在每一试验前对抛光盘进行调整。抛光操作是在压力为10.3千帕(1.5磅/平方英寸),抛光台转速为93转/分钟,载料盘转速为87转/分钟的条件下进行的。CMP组合物的供料速率(淤浆流速率)为200毫升/分钟。供缺陷试验的铜片晶片先经商购的淤浆EPL2362(Ethernal Chemical Co.,Ltd.制造),以CUP4410抛光盘(Rodel,Inc.提供)预抛光1分钟,抛光操作的参数为:压力21.7千帕(3磅/平方英寸),抛光台转速93转/分钟,载料盘转速87转/分钟,以及淤浆供料速率200毫升/分钟。这一预抛光步骤是为了获得新鲜的铜表面。然后,用组合物4的淤浆和常规碱淤浆对经预抛光的铜片晶片进行抛光。
抛光后,在Applied Materials制造的Orbot探伤器具上计数缺陷数。常规碱淤浆造成的缺陷总数为2989;本发明组合物4造成的缺陷总数为314。如图3所示,第二步骤阻隔物抛光酸性组合物提供了优于常规的含高浓度磨料的阻隔物碱性淤浆的对缺陷率的改进作用。
化学机械磨平组合物能有选择去除钽阻隔层,同时又能降低对介电材料的磨蚀。此外,可通过调整组合物来控制阻隔层的去除速率、相互连接金属的去除速率和介电层的去除速率。控制阻隔层去除速率的因素包括平均粒度、微粒浓度、pH值和氧化剂浓度。控制相互连接金属去除速率的因素包括缓蚀剂浓度、平均粒度、微粒浓度和氧化剂浓度。此外,调整介电层去除速率的因素包括羧酸聚合物类型,羧酸聚合物浓度,平均粒度和微粒浓度。调整上述因素可获得能简便地调整多种集成线路图中阻隔层和互连金属的去除速率的CMP组合物。
Claims (10)
1.一种水性化学机械磨平组合物,该组合物包含:
促进阻隔层去除的氧化剂;
磨料;
降低互连金属去除的缓蚀剂;以及
羧酸聚合物,该聚合物包含至少一种含至少两个羧酸官能度的聚合物重复单元,其中该化学机械磨平组合物的pH值小于或等于4,在磨盘压力为13.8千帕时的氮化钽的去除速率为铜去除速率的至少80%。
2.权利要求1的组合物,其中羧酸聚合物包括均聚物或共聚物。
3.权利要求1的组合物,其中羧酸聚合物包括聚马来酸。
4.权利要求1的组合物,该组合物的pH值为1.5-4。
5.一种水性化学机械磨平组合物,该组合物包含:
0.05-15重量%磨料;
0.1-10重量%氧化剂;
0.0025-2重量%苯并三唑;以及
0.01-5重量%羧酸聚合物,其中聚合物的至少一种重复单元含有至少两个羧酸官能度,其中该化学机械磨平组合物的pH值小于或等于4,在磨盘压力为13.8千帕下,氮化钽的去除速率为铜去除速率的至少90%。
6.权利要求5的组合物,其中羧酸聚合物包括均聚物或共聚物。
7.权利要求5的组合物,其中羧酸聚合物包括聚马来酸。
8.磨平半导体晶片的方法,该方法包括:
将水性化学机械磨平组合物施加于晶片上,该组合物包含其中至少一种聚合物重复单元含有至少两个羧酸官能度的羧酸聚合物;磨料和限制互连金属去除的缓蚀剂,其中化学机械磨平组合物的pH值小于或等于4;和
对半导体晶片进行抛光,其中化学机械磨平组合物在磨盘压力为13.8千帕下对氮化钽的去除速率为铜去除速率的至少80%。
9.磨平半导体晶片的方法,该方法包括:
将水性的化学机械磨平组合物施加于晶片上,其中组合物包含0.05-15重量%磨料;0.1-10重量%氧化剂;0.0025-2重量%苯并三唑以及0.01-5重量%羧酸聚合物,其中聚合物中的至少一种重复单元含至少两个羧酸官能度,其中该化学机械磨平组合物的pH值低于或等于4,上述重量百分比都以CMP组合物总重量计,和
在磨盘压力小于或等于约21.7千帕下对半导体晶片进行抛光,其中化学机械磨平组合物的氮化钽对铜的选择性为铜去除速率的至少80%。
10.权利要求9的方法,其中羧酸聚合物包括聚马来酸。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/634,964 US7300603B2 (en) | 2003-08-05 | 2003-08-05 | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
US10/634,964 | 2003-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1590487A true CN1590487A (zh) | 2005-03-09 |
CN1317742C CN1317742C (zh) | 2007-05-23 |
Family
ID=33552923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100558404A Expired - Fee Related CN1317742C (zh) | 2003-08-05 | 2004-08-04 | 降低半导体晶片磨蚀的化学机械磨平组合物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7300603B2 (zh) |
EP (1) | EP1505134B1 (zh) |
JP (1) | JP2005123577A (zh) |
KR (1) | KR20050016171A (zh) |
CN (1) | CN1317742C (zh) |
DE (1) | DE602004012357T2 (zh) |
TW (1) | TWI365906B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101689494B (zh) * | 2007-07-05 | 2013-09-25 | 日立化成株式会社 | 金属膜用研磨液及研磨方法 |
CN107148496A (zh) * | 2014-10-21 | 2017-09-08 | 嘉柏微电子材料股份公司 | 腐蚀抑制剂以及相关的组合物及方法 |
CN110434680A (zh) * | 2019-07-19 | 2019-11-12 | 大连理工大学 | 一种螺旋桨的化学机械抛光液及抛光方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7181476B2 (en) * | 2003-04-30 | 2007-02-20 | Oracle International Corporation | Flashback database |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
US6971945B2 (en) * | 2004-02-23 | 2005-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step polishing solution for chemical mechanical planarization |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
US7427362B2 (en) * | 2005-01-26 | 2008-09-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Corrosion-resistant barrier polishing solution |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP5135755B2 (ja) * | 2005-10-21 | 2013-02-06 | 日立化成工業株式会社 | 銅及び銅合金用研磨剤並びにそれを用いた研磨方法 |
JP2013214786A (ja) * | 2005-11-01 | 2013-10-17 | Hitachi Chemical Co Ltd | 銅膜及び絶縁材料膜用研磨材及び研磨方法 |
US7842192B2 (en) | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
US20070249167A1 (en) * | 2006-04-21 | 2007-10-25 | Cabot Microelectronics Corporation | CMP method for copper-containing substrates |
US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
KR20090010169A (ko) * | 2007-02-20 | 2009-01-29 | 스미토모덴키고교가부시키가이샤 | 연마 슬러리 및 그 제조 방법과, 질화물 결정체 및 그 표면연마 방법 |
US9202709B2 (en) | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
US9548211B2 (en) * | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
TWI454561B (zh) * | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
CN102627916B (zh) * | 2012-03-23 | 2014-09-03 | 江苏中晶科技有限公司 | 具有强化功能的玻璃抛光液 |
US9593261B2 (en) * | 2015-02-04 | 2017-03-14 | Asahi Glass Company, Limited | Polishing agent, polishing method, and liquid additive for polishing |
US10676647B1 (en) | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US6143662A (en) * | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
KR100491465B1 (ko) | 1998-08-31 | 2005-05-25 | 히다치 가세고교 가부시끼가이샤 | 금속용 연마액 및 연마 방법 |
CN1126152C (zh) * | 1998-08-31 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
EP1150341A4 (en) | 1998-12-28 | 2005-06-08 | Hitachi Chemical Co Ltd | MATERIALS FOR METAL POLLING LIQUID, METAL POLISHING LIQUID, THEIR PRODUCTION AND POLISHING METHOD |
KR100472882B1 (ko) * | 1999-01-18 | 2005-03-07 | 가부시끼가이샤 도시바 | 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법 |
JP4406111B2 (ja) * | 1999-04-28 | 2010-01-27 | 花王株式会社 | 研磨液組成物 |
JP3912927B2 (ja) * | 1999-05-10 | 2007-05-09 | 花王株式会社 | 研磨液組成物 |
TWI265567B (en) | 1999-08-26 | 2006-11-01 | Hitachi Chemical Co Ltd | Polishing medium for chemical-mechanical polishing, and polishing method |
JP4505891B2 (ja) | 1999-09-06 | 2010-07-21 | Jsr株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
JP4637398B2 (ja) * | 2001-04-18 | 2011-02-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6485355B1 (en) * | 2001-06-22 | 2002-11-26 | International Business Machines Corporation | Method to increase removal rate of oxide using fixed-abrasive |
US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US7300602B2 (en) * | 2003-01-23 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier metal polishing solution |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
-
2003
- 2003-08-05 US US10/634,964 patent/US7300603B2/en not_active Expired - Lifetime
-
2004
- 2004-07-14 TW TW093121012A patent/TWI365906B/zh not_active IP Right Cessation
- 2004-07-27 EP EP04254468A patent/EP1505134B1/en not_active Expired - Fee Related
- 2004-07-27 DE DE602004012357T patent/DE602004012357T2/de active Active
- 2004-08-04 CN CNB2004100558404A patent/CN1317742C/zh not_active Expired - Fee Related
- 2004-08-05 JP JP2004228853A patent/JP2005123577A/ja active Pending
- 2004-08-05 KR KR1020040061759A patent/KR20050016171A/ko not_active Application Discontinuation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101689494B (zh) * | 2007-07-05 | 2013-09-25 | 日立化成株式会社 | 金属膜用研磨液及研磨方法 |
US8609541B2 (en) | 2007-07-05 | 2013-12-17 | Hitachi Chemical Co., Ltd. | Polishing slurry for metal films and polishing method |
US8901002B2 (en) | 2007-07-05 | 2014-12-02 | Hitachi Chemical Company, Ltd. | Polishing slurry for metal films and polishing method |
CN107148496A (zh) * | 2014-10-21 | 2017-09-08 | 嘉柏微电子材料股份公司 | 腐蚀抑制剂以及相关的组合物及方法 |
CN110434680A (zh) * | 2019-07-19 | 2019-11-12 | 大连理工大学 | 一种螺旋桨的化学机械抛光液及抛光方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1505134B1 (en) | 2008-03-12 |
TW200512280A (en) | 2005-04-01 |
TWI365906B (en) | 2012-06-11 |
EP1505134A1 (en) | 2005-02-09 |
CN1317742C (zh) | 2007-05-23 |
DE602004012357T2 (de) | 2009-04-02 |
JP2005123577A (ja) | 2005-05-12 |
DE602004012357D1 (de) | 2008-04-24 |
US20050029491A1 (en) | 2005-02-10 |
US7300603B2 (en) | 2007-11-27 |
KR20050016171A (ko) | 2005-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1317742C (zh) | 降低半导体晶片磨蚀的化学机械磨平组合物 | |
JP4078787B2 (ja) | 化学機械研磨用水系分散体 | |
CN101553550B (zh) | 用于抛光镶嵌结构中的铝/铜及钛的组合物 | |
CN101767295B (zh) | 化学机械抛光组合物及其相关方法 | |
CN1800284A (zh) | 用来减少对半导体晶片侵蚀的抛光组合物 | |
JP4372173B2 (ja) | 化学的機械的研磨方法および半導体装置の製造方法 | |
CN1301288A (zh) | 用于铜基材的化学机械抛光浆料 | |
WO2005014753A1 (en) | Non-polymeric organic particles for chemical mechanical planarization | |
CN1644640A (zh) | 用于铜的受控抛光的组合物和方法 | |
KR101186110B1 (ko) | 금속막의 화학 기계적 연마용 슬러리 조성물 | |
CN101016440A (zh) | 多组分阻挡层抛光液 | |
JP5576112B2 (ja) | ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 | |
KR20100084197A (ko) | 양으로 하전된 고분자 전해질로 처리된 cmp용 음이온성 연마제 입자 | |
JP5493528B2 (ja) | Cmp研磨液及びこのcmp研磨液を用いた研磨方法 | |
WO2008030420A1 (en) | Silicon carbide polishing method utilizing water-soluble oxidizers | |
JP2006191078A (ja) | 二酸化ケイ素及び窒化ケイ素をケミカルメカニカル研磨するための多工程法 | |
KR20050046620A (ko) | 구리 연마용 조성물 및 방법 | |
CN1572017A (zh) | 研磨剂、研磨剂的制造方法以及研磨方法 | |
US6238469B1 (en) | Dual-valent rare earth additives to polishing slurries | |
CN1630045A (zh) | 用于去除阻挡层的组合物和方法 | |
CN1637100A (zh) | 用于化学机械抛光氧化硅和氮化硅的组合物和方法 | |
CN103205205A (zh) | 一种碱性化学机械抛光液 | |
CN1203529C (zh) | 化学机械研磨用研磨剂及基板的研磨法 | |
KR100445757B1 (ko) | 금속배선 연마용 슬러리 조성물 | |
JP7508275B2 (ja) | 研磨用組成物、研磨方法および半導体基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070523 Termination date: 20200804 |