TWI365906B - Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers - Google Patents
Chemical mechanical planarization compositions for reducing erosion in semiconductor wafersInfo
- Publication number
- TWI365906B TWI365906B TW093121012A TW93121012A TWI365906B TW I365906 B TWI365906 B TW I365906B TW 093121012 A TW093121012 A TW 093121012A TW 93121012 A TW93121012 A TW 93121012A TW I365906 B TWI365906 B TW I365906B
- Authority
- TW
- Taiwan
- Prior art keywords
- chemical mechanical
- semiconductor wafers
- mechanical planarization
- reducing erosion
- planarization compositions
- Prior art date
Links
- 230000003628 erosive effect Effects 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/634,964 US7300603B2 (en) | 2003-08-05 | 2003-08-05 | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200512280A TW200512280A (en) | 2005-04-01 |
TWI365906B true TWI365906B (en) | 2012-06-11 |
Family
ID=33552923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093121012A TWI365906B (en) | 2003-08-05 | 2004-07-14 | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
Country Status (7)
Country | Link |
---|---|
US (1) | US7300603B2 (zh) |
EP (1) | EP1505134B1 (zh) |
JP (1) | JP2005123577A (zh) |
KR (1) | KR20050016171A (zh) |
CN (1) | CN1317742C (zh) |
DE (1) | DE602004012357T2 (zh) |
TW (1) | TWI365906B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7181476B2 (en) * | 2003-04-30 | 2007-02-20 | Oracle International Corporation | Flashback database |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
US6971945B2 (en) * | 2004-02-23 | 2005-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step polishing solution for chemical mechanical planarization |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
US7427362B2 (en) * | 2005-01-26 | 2008-09-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Corrosion-resistant barrier polishing solution |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP5135755B2 (ja) * | 2005-10-21 | 2013-02-06 | 日立化成工業株式会社 | 銅及び銅合金用研磨剤並びにそれを用いた研磨方法 |
JP2013214786A (ja) * | 2005-11-01 | 2013-10-17 | Hitachi Chemical Co Ltd | 銅膜及び絶縁材料膜用研磨材及び研磨方法 |
US7842192B2 (en) | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
US20070249167A1 (en) * | 2006-04-21 | 2007-10-25 | Cabot Microelectronics Corporation | CMP method for copper-containing substrates |
US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
CN101541476A (zh) * | 2007-02-20 | 2009-09-23 | 住友电气工业株式会社 | 研磨浆料、制备研磨浆料的方法、氮化物晶体材料以及氮化物晶体材料的表面研磨方法 |
WO2009005143A1 (ja) * | 2007-07-05 | 2009-01-08 | Hitachi Chemical Co., Ltd. | 金属膜用研磨液及び研磨方法 |
US9202709B2 (en) | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
US9548211B2 (en) * | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
TWI454561B (zh) * | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
CN102627916B (zh) * | 2012-03-23 | 2014-09-03 | 江苏中晶科技有限公司 | 具有强化功能的玻璃抛光液 |
CN116288366A (zh) * | 2014-10-21 | 2023-06-23 | Cmc材料股份有限公司 | 腐蚀抑制剂以及相关的组合物及方法 |
US9593261B2 (en) * | 2015-02-04 | 2017-03-14 | Asahi Glass Company, Limited | Polishing agent, polishing method, and liquid additive for polishing |
US10676647B1 (en) | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
CN110434680A (zh) * | 2019-07-19 | 2019-11-12 | 大连理工大学 | 一种螺旋桨的化学机械抛光液及抛光方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US6143662A (en) * | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
CN1126152C (zh) * | 1998-08-31 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体制程用的化学机械研磨组合物 |
WO2000013217A1 (fr) | 1998-08-31 | 2000-03-09 | Hitachi Chemical Company, Ltd. | Liquide abrasif pour le polissage de metaux et procede correspondant |
KR100597449B1 (ko) | 1998-12-28 | 2006-07-06 | 히다치 가세고교 가부시끼가이샤 | 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법 |
KR100472882B1 (ko) * | 1999-01-18 | 2005-03-07 | 가부시끼가이샤 도시바 | 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법 |
JP4406111B2 (ja) * | 1999-04-28 | 2010-01-27 | 花王株式会社 | 研磨液組成物 |
JP3912927B2 (ja) * | 1999-05-10 | 2007-05-09 | 花王株式会社 | 研磨液組成物 |
KR100512453B1 (ko) | 1999-08-26 | 2005-09-07 | 히다치 가세고교 가부시끼가이샤 | 화학기계연마용 연마제 및 연마방법 |
JP4505891B2 (ja) | 1999-09-06 | 2010-07-21 | Jsr株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
JP4637398B2 (ja) * | 2001-04-18 | 2011-02-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6485355B1 (en) | 2001-06-22 | 2002-11-26 | International Business Machines Corporation | Method to increase removal rate of oxide using fixed-abrasive |
US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US7300602B2 (en) | 2003-01-23 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier metal polishing solution |
US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
-
2003
- 2003-08-05 US US10/634,964 patent/US7300603B2/en not_active Expired - Lifetime
-
2004
- 2004-07-14 TW TW093121012A patent/TWI365906B/zh not_active IP Right Cessation
- 2004-07-27 EP EP04254468A patent/EP1505134B1/en not_active Expired - Fee Related
- 2004-07-27 DE DE602004012357T patent/DE602004012357T2/de active Active
- 2004-08-04 CN CNB2004100558404A patent/CN1317742C/zh not_active Expired - Fee Related
- 2004-08-05 KR KR1020040061759A patent/KR20050016171A/ko not_active Application Discontinuation
- 2004-08-05 JP JP2004228853A patent/JP2005123577A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2005123577A (ja) | 2005-05-12 |
DE602004012357D1 (de) | 2008-04-24 |
CN1590487A (zh) | 2005-03-09 |
TW200512280A (en) | 2005-04-01 |
CN1317742C (zh) | 2007-05-23 |
US7300603B2 (en) | 2007-11-27 |
US20050029491A1 (en) | 2005-02-10 |
DE602004012357T2 (de) | 2009-04-02 |
EP1505134B1 (en) | 2008-03-12 |
KR20050016171A (ko) | 2005-02-21 |
EP1505134A1 (en) | 2005-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI365906B (en) | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers | |
TWI365907B (en) | Composition for polishing semiconductor layers | |
EP1811548A4 (en) | SEMICONDUCTOR WAFER MANUFACTURING METHOD | |
EP1965417A4 (en) | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR FORMING COPPER PRINTED CIRCUIT FOR SEMICONDUCTOR INTEGRATED CIRCUIT | |
GB0511899D0 (en) | Rinsing composition and method for rinsing and manufacturing silicon wafer | |
AU2003297590A8 (en) | Passivative chemical mechanical polishing composition for copper film planarization | |
AU2003238888A1 (en) | Abrasive particles to clean semiconductor wafers during chemical mechanical planarization | |
EP1946358A4 (en) | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS WITH LOW DIELECTRICITY CONSTANT MATERIALS | |
TWI339680B (en) | Washing liquid composition for semiconductor substrate | |
IL165581A0 (en) | Cleaning compositions for microelectronic substrates | |
TW200720383A (en) | Polishing fluids and methods for CMP | |
SG120286A1 (en) | Cushion for packing disks such as semiconductor wafers | |
HK1149366A1 (en) | Multiband semiconductor compositions for photovoltaic devices | |
SG117412A1 (en) | Semiconductor wafer dividing method | |
EP1653502A4 (en) | SEMICONDUCTOR LAYER | |
EP1955813A4 (en) | PROCESS FOR PRODUCING SILICON WAFER | |
GB2424516B (en) | Protecting thin semiconductor wafers during back-grinding in high-volume production | |
HK1079336A1 (en) | Semiconductor wafer and manufacturing method therefor | |
EP1801854A4 (en) | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER | |
SG122919A1 (en) | Abrasive-free chemical mechanical polishing compositions and methods relating thereto | |
EP1994112A4 (en) | CHEMICAL MECHANICAL POLISHING PASTE AND METHOD OF POLISHING A SEMICONDUCTOR WAFER USING THE SAME | |
EP1590505A4 (en) | COMPOSITION AND PROCESS FOR CHEMICAL AND MECHANICAL PLANARIZATION OF COPPER | |
SG109612A1 (en) | Semiconductor integrated circuit | |
SG112046A1 (en) | Method of manufacturing semiconductor wafer | |
GB0705541D0 (en) | Polishing composition for silicon wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |