HK1149366A1 - Multiband semiconductor compositions for photovoltaic devices - Google Patents

Multiband semiconductor compositions for photovoltaic devices

Info

Publication number
HK1149366A1
HK1149366A1 HK11103441.6A HK11103441A HK1149366A1 HK 1149366 A1 HK1149366 A1 HK 1149366A1 HK 11103441 A HK11103441 A HK 11103441A HK 1149366 A1 HK1149366 A1 HK 1149366A1
Authority
HK
Hong Kong
Prior art keywords
photovoltaic devices
semiconductor compositions
multiband semiconductor
multiband
compositions
Prior art date
Application number
HK11103441.6A
Inventor
Wladyslaw Walukiewicz
Kin Man Yu
Junqiao Wu
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Publication of HK1149366A1 publication Critical patent/HK1149366A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
HK11103441.6A 2003-12-01 2011-04-06 Multiband semiconductor compositions for photovoltaic devices HK1149366A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52621003P 2003-12-01 2003-12-01

Publications (1)

Publication Number Publication Date
HK1149366A1 true HK1149366A1 (en) 2011-09-30

Family

ID=34652430

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11103441.6A HK1149366A1 (en) 2003-12-01 2011-04-06 Multiband semiconductor compositions for photovoltaic devices

Country Status (5)

Country Link
EP (1) EP1695388A2 (en)
JP (1) JP2007535129A (en)
CN (3) CN101853889B (en)
HK (1) HK1149366A1 (en)
WO (1) WO2005055285A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005047907A1 (en) * 2005-10-06 2007-04-12 Basf Ag Photovoltaic cell with a photovoltaically active semiconductor material contained therein
JP4885237B2 (en) * 2006-01-03 2012-02-29 ビーエーエスエフ ソシエタス・ヨーロピア Photovoltaic active semiconductor materials
JP4868855B2 (en) * 2006-01-12 2012-02-01 シャープ株式会社 Multi-junction solar cell
ES2293862B2 (en) 2007-10-17 2009-02-16 Universidad Politecnica De Madrid SOLAR INTERMEDIATE BAND CELL OF QUANTIC POINTS WITH OPTIMAL COUPLING OF LIGHT BY DIFFACTION.
CN101981685B (en) * 2008-01-28 2015-05-20 阿米特·戈亚尔 [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
EP2400558A4 (en) * 2009-02-20 2013-08-21 Nat Univ Corp Kyoto Inst Tech Light absorbing material and photoelectric conversion element using same
US20130008508A1 (en) 2010-03-18 2013-01-10 National University Corporation Kyoto Institute Of Technology Light absorbing material and photoelectric conversion element
CN102339894A (en) * 2010-07-23 2012-02-01 上海凯世通半导体有限公司 Method for manufacturing solar cell
CN102339893A (en) * 2010-07-23 2012-02-01 上海凯世通半导体有限公司 Preparation method for solar wafer
CN104200000B (en) * 2014-07-23 2017-09-26 江苏大学 The ZnO metallic cermet films p-type transfer design methods being co-doped with based on Al N

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FR2569427B1 (en) * 1984-08-23 1986-11-14 Commissariat Energie Atomique METHOD AND DEVICE FOR DEPOSITING ONTO A SUBSTRATE OF A THIN FILM OF A COMPOUND COMPRISING AT LEAST ONE CATIONIC COMPONENT AND AT LEAST ONE ANIONIC CONSTITUENT
US5432374A (en) * 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
JP2974107B2 (en) * 1993-09-28 1999-11-08 矢崎総業株式会社 Method for manufacturing solar cell absorption layer
JP2922825B2 (en) * 1995-08-14 1999-07-26 松下電器産業株式会社 Solar cell and method of manufacturing the same
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
US6256331B1 (en) * 1997-08-08 2001-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
JPH11243186A (en) * 1998-02-26 1999-09-07 Fujitsu Ltd Manufacture of semiconductor device
CN1168147C (en) * 1999-01-14 2004-09-22 松下电器产业株式会社 Semiconductor crystal, its producing method and semiconductor device
JP3689615B2 (en) * 2000-03-29 2005-08-31 キヤノン株式会社 Photoelectric fusion device having a three-dimensional shape
JP2002118328A (en) * 2000-10-10 2002-04-19 Ricoh Co Ltd Semiconductor light emitting element
CN1350050A (en) * 2000-10-19 2002-05-22 中国科学院长春光学精密机械与物理研究所 RE compound material for organic film photovoltaic device
JP2002217497A (en) * 2001-01-22 2002-08-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical element
CN100360721C (en) * 2001-04-04 2008-01-09 日矿金属株式会社 Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device
JP3976543B2 (en) * 2001-10-29 2007-09-19 日鉱金属株式会社 ZnTe compound semiconductor manufacturing method, ZnTe compound semiconductor, and semiconductor device
CN1152154C (en) * 2001-05-11 2004-06-02 中国科学院上海冶金研究所 Chemical etching liquid system for preparing gallium antimonide semiconductor device
AU2002230804A1 (en) * 2001-12-14 2003-06-30 Midwest Research Institute Multi-junction solar cell device

Also Published As

Publication number Publication date
WO2005055285A2 (en) 2005-06-16
CN101853889B (en) 2012-07-04
CN101416321A (en) 2009-04-22
CN102738259A (en) 2012-10-17
WO2005055285A3 (en) 2013-01-10
EP1695388A2 (en) 2006-08-30
CN101853889A (en) 2010-10-06
JP2007535129A (en) 2007-11-29

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171129