EP1695388A2 - Multiband semiconductor compositions for photovoltaic devices - Google Patents
Multiband semiconductor compositions for photovoltaic devicesInfo
- Publication number
- EP1695388A2 EP1695388A2 EP04817004A EP04817004A EP1695388A2 EP 1695388 A2 EP1695388 A2 EP 1695388A2 EP 04817004 A EP04817004 A EP 04817004A EP 04817004 A EP04817004 A EP 04817004A EP 1695388 A2 EP1695388 A2 EP 1695388A2
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- EP
- European Patent Office
- Prior art keywords
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- semiconductor
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- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims description 62
- 239000000203 mixture Substances 0.000 title claims description 44
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 33
- 239000000956 alloy Substances 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 6
- 229910021476 group 6 element Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 22
- 238000001228 spectrum Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 10
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- 238000005468 ion implantation Methods 0.000 abstract description 3
- 238000010348 incorporation Methods 0.000 abstract 1
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- 239000000758 substrate Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
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- 238000002513 implantation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
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- 239000011159 matrix material Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 229910052793 cadmium Inorganic materials 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 244000261228 chanvre indien Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- This invention relates to new materials for photovoltaic devices and more specifically multiband semiconductors for high power conversion efficiency solar cells.
- Various materials that are suitable for photovoltaic devices are known, such as tetrahedral amorphous semiconductors (e.g., amorphous silicon, amorphous silicon germanium and amorphous silicon carbide) as well as poly- and mono-crystalline semiconductors including group IV (Si), II- VI compound semiconductors, (e.g., CdTe), and III-V group compound semiconductors, (e.g., GaAs, GalnP, GaAlAs).
- a conventional solar utilizes the pn junction formed by ion implantation or thermal diffusion of impurities into a substrate of single crystal of silicon (Si) or gallium arsenide (GaAs), or by epitaxial growth of an impurity-doped layer on a substrate of such single crystal.
- Si silicon
- GaAs gallium arsenide
- Such single junction solar cells have only limited efficiency because they are sensitive to a limited part of the total solar spectrum. The efficiency can be improved by using stacks of p/n junctions formed with semiconductors with different energy gaps that are sensitive to different parts of solar spectrum. This concept has been realized in multijunction or tandem solar cells (J. M. Olson, T. A. Gessert, and M. M. Al- Jasim, Proc.
- III-V alloys in which group V anions are partially replaced with the isovalent N [Semiconductor Science and Technology 17, 2002, Special Issue: III-N-V Semiconductor Alloys, the contents of which are hereby incorporated by reference in its entirety] or H-VI alloys in which group VI anions are partially replaced with O [K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager, E. E. Haller, I. Miotkowski, A. K. Ramdas, and P. Becla, Appl. Phys. Lett. 80, 1571 (2002), the contents of which are hereby incorporated by reference in its entirety, ] are the well known examples of the HMAs.
- GaNjAs;.* exhibits a strong reduction of the band gap by 180 meV when only 1% of the As atoms is replaced by N. It has been predicted and experimentally demonstrated that the electronic band structure of such HMAs is determined by the anticrossing interaction between localized O or N states and the extended states of the semiconductor matrix [W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, I. Miotlowski, M. J. Seong, H. Alawadhi, and A. K. Ramdas, Phys. Rev. Lett. 85, 1552 (2000), the contents of which are hereby incorporated by reference in its entirety].
- BRD2F SUMMARY OF THE INVENTION The present invention provides a new class of multiband gap semiconductor materials.
- This class of multiband material can be used for the design of high efficiency solar cells.
- the materials in accordance with the present invention comprise group II- VI compound semiconductor in which a fraction of the group VI atoms have been replaced with oxygen atoms forming TJ-O x -VI 1-x alloys.
- the materials can be fabricated using ion implantation followed by pulsed laser melting and/or thermal annealing.
- the materials can be also synthesized as epitaxial films using Pulsed Laser Deposition and a variety of epitaxial growth techniques including Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition.
- the solar cells are fabricated by forming a single p/n junction in the aforementioned materials.
- BRffiF DESCRIPTION OF THE DRAWINGS The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings:
- FIG 1 displays photomodulated reflectance (PR) spectra obtained from a series of 3.3% OAmplanted Zno. 88 Mno. ⁇ 2 Te samples followed by pulsed laser melting with increasing energy fluence from 0.04-0.3 J/cm 2 .
- FIG 3 shows the energy positions of E. and E + for the Zno .88 Mno. 12 O x Te 1-x alloys with different x.
- FIG 4 schematically displays the optical transitions between different bands in Zno. 88 Mn 0.
- FIG 5 displays current-voltage (I/V) characteristics and the spectral dependence of Photo voltage (PV) for a proptotypical p/n junction fabricated on the multiband semiconductor.
- the junction comprises a p- type Zno . ssMno . nTe substrate implanted with O and Cl ions.
- the top implanted layer was pulsed laser melted.
- the O atoms partially replacing Te atoms form additional conduction band.
- FIG 6 shows the calculated power conversion efficiency for a solar cell fabricated from a 3-band Zn 0.88 Mno .12 O x Te 1-x alloy as a function of O content. The solid line is an empirical polynomial fit of the calculated data.
- FIG 7 shows the location of the nitrogen energy, E N level relative to the conduction band energy minima Er and Ex in GaN x As 1-x . y P y .
- FIG 8 shows the energies of the upper conduction E + and intermediate E. band in GaN x As ⁇ -x- o. 6 Po. 4 as functions of the N-content x.
- a semiconductor composition comprising a ternary or quaternary alloy, said alloy comprising a Group II element, a Group VI element, Oxygen and optionally a third element "A", wherein said alloy has a mole fraction composition of (Group IT)( 1 .y)(A) y O x (Group VI)(i -X ), and 0 ⁇ y ⁇ l and 0 ⁇ x ⁇ l and "A" comprises Mg.
- an alloy comprising Zno .88 Ao . ⁇ 2 O x Te 1-x , where 0 ⁇ x ⁇ 0.05.
- x is between about 0.01 and 0.05.
- a semiconductor composition comprising a ternary or quaternary alloy, said alloy comprising a Group II element, a Group VI element, Oxygen and optionally a third element "A", wherein said alloy has a mole fraction composition of (Group JT) ⁇ . y )(A)yO x (Group VI)( 1-X ), and 0 ⁇ y ⁇ l and 0 ⁇ x ⁇ 0.05 and "A" comprises either Mn or Mg, and wherein the Group II element does not comprise Cd.
- x is between about 0.01 and 0.05.
- a semiconductor composition comprising a ternary or quaternary alloy comprising a Group II element, optionally another Group II element "A", S or Se, Oxygen and Tellurium, wherein said alloy has a mole fraction composition of (Group H)( X )(A)( 1-X )(S or Se)( 1-y-2 )(Te)( y )(O) 2 ⁇ and
- a semiconductor composition comprising an alloy comprising GaN x As ⁇ -x . y P y wherein 0.3 ⁇ y ⁇ 0.5 and 0 ⁇ x ⁇ 0.05.
- semiconductor composition comprising an alloy comprising Ga 1-y In y N x P ⁇ -x wherein 0.4 ⁇ y ⁇ 0.6 and 0 ⁇ x ⁇ 0.05. All of the compositions disclosed herein are suitable for films for use in photovoltaic devices.
- Group II- VI compounds and their alloys it is meant to include all compound semiconductor materials composed such as ZnTe, CdTe and all other binary, ternary and quaternary alloys of the respective Group elements.
- Group II elements include Mn, Mg, Zn and Cd.
- Group VI elements include O, S, Se, and Te.
- Group HI elements include B, Al, Ga, In and Tl.
- Group V elements include N, P, As, and Sb. It is understood that the present invention includes semiconductor materials which are doped or undoped (i.e. pure intrinsic semiconductors) and may be arranged to form a variety of semiconductor devices with junctions such as pn, pnp, npn, pin, pip and so forth.
- the materials can be doped in a conventional manner.
- conventional dopants such as B, P, As, In and Al can be used.
- Dopants may be selected from Groups ⁇ , 111, IV, V, VI, etc.
- Mn may be replaced with Mg.
- FIG 1 shows a series of PR spectra from Zno .88 Mn 0.12 Te samples implanted with 3.3% of O + followed by PLM with increasing laser energy fluence from 0.04 to 0.3 J/cm 2 .
- transitions can be attributed to transitions from the valence band to the two conduction subbands, E + (-2.6 eV) and E. (-1.8 eV) formed as a result of the hybridization of the localized O states and the extended conduction band states of ZnMnTe.
- the strong signals at both E. and E + indicates the extended nature of these electronic states and the substantial oscillator strength for the transitions.
- the energy band structure and the density of states for the case of Zno .88 Mno .12 O ⁇ Te 1-x alloy (with x ⁇ 0.01) are shown in Fig 4.
- An O derived narrow band of extended states E. is separated from the upper subband E + by about 0.7 eV.
- a reduction in the energy shifts of both E. and E + can be observed at RTA temperature higher than 350°C. This indicates that the Zno. 88 Mno .12 O x Te ⁇ -x alloys are thermally stable up to ⁇ 350°C.
- At an RTA temperature of 700°C only the original E M transition is observed. This may suggest that the O atoms that resided in the Te sites diffused out of the Te sites, possibly forming O bubbles.
- x decreases with increasing energy fluence higher than the melt threshold (-0.08 J/cm 2 ); possibly due to the longer melt duration and/or dilution through the deeper melt depth.
- the energy positions of the two transitions as predicted by the B AC model are plotted as solid lines.
- TA thermal annealing
- PLM pulsed laser melting
- PLA pulse laser annealing
- PLM pulse melting
- the calculated power conversion efficiency for a solar cell fabricated from a 3-band Zno .88 Mno . ⁇ 2 O x Te 1-x alloy as a function of O content is shown in FIG 6. Note that in the following examples it is preferred that the time period used for the heating be as short as possible. There is generally an inverse relationship between the time for heating and the temperature used. One of ordinary skill in the art can readily optimize the proper parameters for the particular Group II- VI semiconductor. Examples
- the band gap of the compositions and films made in accordance with the present invention was measured at room temperature using photomodulated reflectance (PR). Radiation from a 300 Watt halogen tungsten lamp dispersed by a 0.5 m monochromator was focused on the samples as a probe beam.
- PR photomodulated reflectance
- PR signals were detected by a Si photodiode using a phase-sensitive lock-in amplification system.
- the values of the band gap and the line width were determined by fitting the PR spectra to the Aspnes third-derivative functional form, see D. E. Aspnes, Surf. Sci. 37, 418 (1973), the contents of which are hereby incorporated by reference in its entirety.
- Example 1 (Group ⁇ ) (x) (A) ( ⁇ -x )(S or Se) (1-y-z) (Te) (y )(O) z , and 0 ⁇ x ⁇ l, 0 ⁇ z ⁇ 0.04 and 0 ⁇ y ⁇ 0.2).
- the material may be fabricated as follows. A substrate of ZnSe 1-y Te y (0 ⁇ y ⁇ 0.2) is implanted with 1 to 4% of O. The top layer is melted with a short pulse of a laser light. The top layer, four band layer can be doped n-type to form a p/n junction with the p-type substrate.
- Example 2 Preparation of a solar cell using the semiconductor materials described herein.
- a p-type substrate of Zn ⁇ . y Mn y Te (or similar material) may be implanted with 1 to 4 atomic % of O and 0 to 1 atomic % of Cl. The top implanted layer is then melted with a short laser pulse.
- Example 3 Preparation of a (Group U)(i -y )(A)yO ⁇ (Group VI)( 1-X ), and 0 ⁇ y ⁇ l and 0 ⁇ x ⁇ 0.1 and "A" comprises Mg.
- Example 4 Preparation of GaN x As 1-x-y P y , where 0.3 ⁇ y ⁇ 0.5 and 0 ⁇ x ⁇ 0.05. Multiple energy implantation of N into GaAs 1-y P y (0.3 ⁇ y ⁇ 0.5) single crystals to form a thin layer with relatively constant N concentration corresponding to N mole fractions of 0 ⁇ x ⁇ 0.05.
- the N + -implanted samples are pulsed-laser melted with varying photon fluence.
- GaN x As 1-x-y P y with 0.3 ⁇ y ⁇ 0.5 and 0 ⁇ x ⁇ 0.05 can be also grown using appropriate thin film growth epitaxial techniques including molecular beam epitaxy and metalorganic chemical vapor deposition.
- FIG 7 shows the location of the nitrogen energy, E N level relative to the conduction band energy minima Er and E x in GaN x As 1-x- y P y .
- An intermediate nitrogen derived band is best formed when the E falls below Er and Er is still below E x minimum. As seen in FIG 7 this occurs for 0.4 ⁇ y ⁇ 0.6.
- FIG 8 shows the energies of the upper conduction E + and intermediate E.
- Example 5 Preparation of Ga ⁇ -y In y N x Pi. x wherein 0.4 ⁇ y ⁇ 0.6 and 0 ⁇ x ⁇ 0.05. Multiple energy implantation of N into Ga ⁇ -y In y P (0.4 ⁇ y ⁇ 0.6) single crystals to form a thin layer with relatively constant N concentration corresponding to N mole fractions of 0 ⁇ x ⁇ 0.05. The N + -implanted samples are pulsed-laser melted with varying photon fluence.
- Ga 1-y In y N x P 1-x with 0.3 ⁇ y ⁇ 0.5 and 0 ⁇ x ⁇ 0.05 can be also grown using appropriate thin film growth epitaxial techniques including molecular beam epitaxy and metalorganic chemical vapor deposition.
- BAC band anticrossing
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Abstract
Description
Claims
Applications Claiming Priority (2)
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PCT/US2004/039900 WO2005055285A2 (en) | 2003-12-01 | 2004-11-29 | Multiband semiconductor compositions for photovoltaic devices |
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JP (1) | JP2007535129A (en) |
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DE102005047907A1 (en) * | 2005-10-06 | 2007-04-12 | Basf Ag | Photovoltaic cell with a photovoltaically active semiconductor material contained therein |
EP1972014A1 (en) * | 2006-01-03 | 2008-09-24 | Basf Se | Photovoltaically active semiconductor material and photovoltaic cell |
JP4868855B2 (en) * | 2006-01-12 | 2012-02-01 | シャープ株式会社 | Multi-junction solar cell |
ES2293862B2 (en) | 2007-10-17 | 2009-02-16 | Universidad Politecnica De Madrid | SOLAR INTERMEDIATE BAND CELL OF QUANTIC POINTS WITH OPTIMAL COUPLING OF LIGHT BY DIFFACTION. |
AU2008349510B2 (en) * | 2008-01-28 | 2012-05-10 | Amit Goyal | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
CN102326257A (en) * | 2009-02-20 | 2012-01-18 | 国立大学法人京都工芸纤维大学 | Light absorbing material and use the photo-electric conversion element of this light absorbing material |
WO2011115171A1 (en) | 2010-03-18 | 2011-09-22 | 国立大学法人京都工芸繊維大学 | Light-absorbing material and photoelectric conversion element using same |
CN102339893A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Preparation method for solar wafer |
CN102339894A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Method for manufacturing solar cell |
CN104200000B (en) * | 2014-07-23 | 2017-09-26 | 江苏大学 | The ZnO metallic cermet films p-type transfer design methods being co-doped with based on Al N |
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FR2569427B1 (en) * | 1984-08-23 | 1986-11-14 | Commissariat Energie Atomique | METHOD AND DEVICE FOR DEPOSITING ONTO A SUBSTRATE OF A THIN FILM OF A COMPOUND COMPRISING AT LEAST ONE CATIONIC COMPONENT AND AT LEAST ONE ANIONIC CONSTITUENT |
US5432374A (en) * | 1993-02-08 | 1995-07-11 | Santa Barbara Research Center | Integrated IR and mm-wave detector |
JP2974107B2 (en) * | 1993-09-28 | 1999-11-08 | 矢崎総業株式会社 | Method for manufacturing solar cell absorption layer |
JP2922825B2 (en) * | 1995-08-14 | 1999-07-26 | 松下電器産業株式会社 | Solar cell and method of manufacturing the same |
US5998235A (en) * | 1997-06-26 | 1999-12-07 | Lockheed Martin Corporation | Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials |
EP0896406B1 (en) * | 1997-08-08 | 2006-06-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor |
US6281426B1 (en) * | 1997-10-01 | 2001-08-28 | Midwest Research Institute | Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge |
JPH11243186A (en) * | 1998-02-26 | 1999-09-07 | Fujitsu Ltd | Manufacture of semiconductor device |
CN1168147C (en) * | 1999-01-14 | 2004-09-22 | 松下电器产业株式会社 | Semiconductor crystal, its producing method and semiconductor device |
JP3689615B2 (en) * | 2000-03-29 | 2005-08-31 | キヤノン株式会社 | Photoelectric fusion device having a three-dimensional shape |
JP2002118328A (en) * | 2000-10-10 | 2002-04-19 | Ricoh Co Ltd | Semiconductor light emitting element |
CN1350050A (en) * | 2000-10-19 | 2002-05-22 | 中国科学院长春光学精密机械与物理研究所 | RE compound material for organic film photovoltaic device |
JP2002217497A (en) * | 2001-01-22 | 2002-08-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor optical element |
WO2002081789A1 (en) * | 2001-04-04 | 2002-10-17 | Nikko Materials Co., Ltd. | METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE |
JP3976543B2 (en) * | 2001-10-29 | 2007-09-19 | 日鉱金属株式会社 | ZnTe compound semiconductor manufacturing method, ZnTe compound semiconductor, and semiconductor device |
CN1152154C (en) * | 2001-05-11 | 2004-06-02 | 中国科学院上海冶金研究所 | Chemical etching liquid system for preparing gallium antimonide semiconductor device |
AU2002230804A1 (en) * | 2001-12-14 | 2003-06-30 | Midwest Research Institute | Multi-junction solar cell device |
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CN101416321A (en) | 2009-04-22 |
HK1149366A1 (en) | 2011-09-30 |
JP2007535129A (en) | 2007-11-29 |
CN101853889A (en) | 2010-10-06 |
WO2005055285A2 (en) | 2005-06-16 |
WO2005055285A3 (en) | 2013-01-10 |
CN101853889B (en) | 2012-07-04 |
CN102738259A (en) | 2012-10-17 |
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