WO2005055285A3 - Multiband semiconductor compositions for photovoltaic devices - Google Patents

Multiband semiconductor compositions for photovoltaic devices Download PDF

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Publication number
WO2005055285A3
WO2005055285A3 PCT/US2004/039900 US2004039900W WO2005055285A3 WO 2005055285 A3 WO2005055285 A3 WO 2005055285A3 US 2004039900 W US2004039900 W US 2004039900W WO 2005055285 A3 WO2005055285 A3 WO 2005055285A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxygen
photovoltaic devices
band
semiconductor compositions
multiband semiconductor
Prior art date
Application number
PCT/US2004/039900
Other languages
French (fr)
Other versions
WO2005055285A2 (en
Inventor
Wladyslaw Walukiewicz
Kin Man Yu
Junqiao Wu
Original Assignee
The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Priority to EP04817004A priority Critical patent/EP1695388A2/en
Priority to JP2006541490A priority patent/JP2007535129A/en
Publication of WO2005055285A2 publication Critical patent/WO2005055285A2/en
Publication of WO2005055285A3 publication Critical patent/WO2005055285A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The highly mismatched alloy Znl-yMnyOxTe1-x- 0≤y<l and O<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Znl-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Znl-yMnyOxTel1-x is a material perfectly satisfying the conditions for single junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
PCT/US2004/039900 2003-12-01 2004-11-29 Multiband semiconductor compositions for photovoltaic devices WO2005055285A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04817004A EP1695388A2 (en) 2003-12-01 2004-11-29 Multiband semiconductor compositions for photovoltaic devices
JP2006541490A JP2007535129A (en) 2003-12-01 2004-11-29 Multi-band semiconductor compositions for photovoltaic devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52621003P 2003-12-01 2003-12-01
US60/526,210 2003-12-01

Publications (2)

Publication Number Publication Date
WO2005055285A2 WO2005055285A2 (en) 2005-06-16
WO2005055285A3 true WO2005055285A3 (en) 2013-01-10

Family

ID=34652430

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/039900 WO2005055285A2 (en) 2003-12-01 2004-11-29 Multiband semiconductor compositions for photovoltaic devices

Country Status (5)

Country Link
EP (1) EP1695388A2 (en)
JP (1) JP2007535129A (en)
CN (3) CN102738259A (en)
HK (1) HK1149366A1 (en)
WO (1) WO2005055285A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005047907A1 (en) * 2005-10-06 2007-04-12 Basf Ag Photovoltaic cell with a photovoltaically active semiconductor material contained therein
WO2007077114A1 (en) * 2006-01-03 2007-07-12 Basf Se Photovoltaically active semiconductor material and photovoltaic cell
JP4868855B2 (en) * 2006-01-12 2012-02-01 シャープ株式会社 Multi-junction solar cell
ES2293862B2 (en) 2007-10-17 2009-02-16 Universidad Politecnica De Madrid SOLAR INTERMEDIATE BAND CELL OF QUANTIC POINTS WITH OPTIMAL COUPLING OF LIGHT BY DIFFACTION.
CN101981685B (en) * 2008-01-28 2015-05-20 阿米特·戈亚尔 [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
CN102326257A (en) * 2009-02-20 2012-01-18 国立大学法人京都工芸纤维大学 Light absorbing material and use the photo-electric conversion element of this light absorbing material
EP2549546A4 (en) 2010-03-18 2017-08-23 National University Corporation Kyoto Institute of Technology Light-absorbing material and photoelectric conversion element using same
CN102339893A (en) * 2010-07-23 2012-02-01 上海凯世通半导体有限公司 Preparation method for solar wafer
CN102339894A (en) * 2010-07-23 2012-02-01 上海凯世通半导体有限公司 Method for manufacturing solar cell
CN104200000B (en) * 2014-07-23 2017-09-26 江苏大学 The ZnO metallic cermet films p-type transfer design methods being co-doped with based on Al N

Citations (5)

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US5432374A (en) * 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
US6256331B1 (en) * 1997-08-08 2001-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor
JP2002217497A (en) * 2001-01-22 2002-08-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical element
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FR2569427B1 (en) * 1984-08-23 1986-11-14 Commissariat Energie Atomique METHOD AND DEVICE FOR DEPOSITING ONTO A SUBSTRATE OF A THIN FILM OF A COMPOUND COMPRISING AT LEAST ONE CATIONIC COMPONENT AND AT LEAST ONE ANIONIC CONSTITUENT
JP2974107B2 (en) * 1993-09-28 1999-11-08 矢崎総業株式会社 Method for manufacturing solar cell absorption layer
JP2922825B2 (en) * 1995-08-14 1999-07-26 松下電器産業株式会社 Solar cell and method of manufacturing the same
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
JPH11243186A (en) * 1998-02-26 1999-09-07 Fujitsu Ltd Manufacture of semiconductor device
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US6256331B1 (en) * 1997-08-08 2001-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor
JP2002217497A (en) * 2001-01-22 2002-08-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical element
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Also Published As

Publication number Publication date
CN101853889A (en) 2010-10-06
JP2007535129A (en) 2007-11-29
CN102738259A (en) 2012-10-17
CN101853889B (en) 2012-07-04
WO2005055285A2 (en) 2005-06-16
HK1149366A1 (en) 2011-09-30
CN101416321A (en) 2009-04-22
EP1695388A2 (en) 2006-08-30

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