JP2005109465A5 - - Google Patents

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Publication number
JP2005109465A5
JP2005109465A5 JP2004263486A JP2004263486A JP2005109465A5 JP 2005109465 A5 JP2005109465 A5 JP 2005109465A5 JP 2004263486 A JP2004263486 A JP 2004263486A JP 2004263486 A JP2004263486 A JP 2004263486A JP 2005109465 A5 JP2005109465 A5 JP 2005109465A5
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JP
Japan
Prior art keywords
conductive layer
semiconductor device
ultrafine carbon
carbon fiber
graphite
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Application number
JP2004263486A
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English (en)
Japanese (ja)
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JP2005109465A (ja
JP4689218B2 (ja
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Priority to JP2004263486A priority Critical patent/JP4689218B2/ja
Priority claimed from JP2004263486A external-priority patent/JP4689218B2/ja
Publication of JP2005109465A publication Critical patent/JP2005109465A/ja
Publication of JP2005109465A5 publication Critical patent/JP2005109465A5/ja
Application granted granted Critical
Publication of JP4689218B2 publication Critical patent/JP4689218B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004263486A 2003-09-12 2004-09-10 半導体装置の作製方法 Expired - Fee Related JP4689218B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004263486A JP4689218B2 (ja) 2003-09-12 2004-09-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003322324 2003-09-12
JP2003322324 2003-09-12
JP2004263486A JP4689218B2 (ja) 2003-09-12 2004-09-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005109465A JP2005109465A (ja) 2005-04-21
JP2005109465A5 true JP2005109465A5 (https=) 2007-10-18
JP4689218B2 JP4689218B2 (ja) 2011-05-25

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Family Applications (1)

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JP2004263486A Expired - Fee Related JP4689218B2 (ja) 2003-09-12 2004-09-10 半導体装置の作製方法

Country Status (1)

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JP (1) JP4689218B2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP2005277096A (ja) * 2004-03-24 2005-10-06 Japan Science & Technology Agency カーボンナノチューブ含有金属膜を用いてなる半導体配線とその製造方法、およびカーボンナノチューブ含有金属膜の製造方法
JP4855757B2 (ja) * 2005-10-19 2012-01-18 富士通株式会社 カーボンナノチューブパッド及び電子デバイス
JP4499752B2 (ja) * 2006-03-03 2010-07-07 日本エレクトロプレイテイング・エンジニヤース株式会社 電子部品
US7713858B2 (en) 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
JP4899703B2 (ja) * 2006-08-07 2012-03-21 富士通株式会社 カーボン配線構造およびその製造方法、および半導体装置
JP5233125B2 (ja) * 2007-02-01 2013-07-10 富士通株式会社 半導体装置
JP5168984B2 (ja) * 2007-03-30 2013-03-27 富士通株式会社 カーボンナノチューブ金属複合材料によるデバイス構造
KR101487346B1 (ko) 2007-09-12 2015-01-28 스몰텍 에이비 인접 층들을 나노구조들과 연결하고 결합하는 방법
JP2009117591A (ja) * 2007-11-06 2009-05-28 Panasonic Corp 配線構造及びその形成方法
CN102007571B (zh) * 2008-02-25 2016-01-20 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
JP5186662B2 (ja) * 2008-09-16 2013-04-17 富士通株式会社 電子部品及び電子部品の製造方法
US9099537B2 (en) * 2009-08-28 2015-08-04 International Business Machines Corporation Selective nanotube growth inside vias using an ion beam
CN102376625B (zh) * 2010-08-11 2014-03-19 中国科学院微电子研究所 一种半导体器件及其制造方法
CN102376686B (zh) * 2010-08-11 2013-09-18 中国科学院微电子研究所 一种半导体器件及其制造方法
KR101899375B1 (ko) * 2011-01-28 2018-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6328870B2 (ja) * 2011-11-11 2018-05-23 株式会社Ihi ナノ構造物の製造方法
JP5978600B2 (ja) * 2011-11-21 2016-08-24 富士通株式会社 半導体装置の製造方法
CN102569410B (zh) * 2012-02-28 2014-06-11 上海华力微电子有限公司 双层隔离半导体纳米线mosfet
CN102569409B (zh) * 2012-02-28 2014-07-16 上海华力微电子有限公司 双层隔离纵向堆叠式半导体纳米线mosfet
JP2015201495A (ja) * 2014-04-04 2015-11-12 アルプス電気株式会社 電子部品
JP6210922B2 (ja) * 2014-04-04 2017-10-11 アルプス電気株式会社 電子部品
CN105070767B (zh) * 2015-08-05 2018-04-20 西安电子科技大学 一种基于碳基复合电极的高温SiC JFET器件
EP3453049A4 (en) * 2016-05-06 2019-12-18 Smoltek AB ASSEMBLY PLATFORM
KR102326519B1 (ko) * 2017-06-20 2021-11-15 삼성전자주식회사 반도체 장치

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
DE10006964C2 (de) * 2000-02-16 2002-01-31 Infineon Technologies Ag Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements
JP2002009146A (ja) * 2000-06-19 2002-01-11 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP4212258B2 (ja) * 2001-05-02 2009-01-21 富士通株式会社 集積回路装置及び集積回路装置製造方法
JP2003017467A (ja) * 2001-06-28 2003-01-17 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP2003142755A (ja) * 2001-11-05 2003-05-16 Fujitsu Ltd 磁気抵抗センサ及びその製造方法
JP4032116B2 (ja) * 2002-11-01 2008-01-16 国立大学法人信州大学 電子部品およびその製造方法
US7518247B2 (en) * 2002-11-29 2009-04-14 Nec Corporation Semiconductor device and its manufacturing method

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