JP2005089823A - 成膜装置および成膜方法 - Google Patents

成膜装置および成膜方法 Download PDF

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Publication number
JP2005089823A
JP2005089823A JP2003325004A JP2003325004A JP2005089823A JP 2005089823 A JP2005089823 A JP 2005089823A JP 2003325004 A JP2003325004 A JP 2003325004A JP 2003325004 A JP2003325004 A JP 2003325004A JP 2005089823 A JP2005089823 A JP 2005089823A
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Japan
Prior art keywords
film forming
film
gas
chamber
plasma generation
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JP2003325004A
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English (en)
Japanese (ja)
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JP2005089823A5 (https=
Inventor
Seiji Sagawa
誠二 寒川
Toshihisa Nozawa
俊久 野沢
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003325004A priority Critical patent/JP2005089823A/ja
Priority to KR1020067005339A priority patent/KR100878910B1/ko
Priority to EP04773039.5A priority patent/EP1672093B1/en
Priority to CNB2004800105722A priority patent/CN100494487C/zh
Priority to PCT/JP2004/013357 priority patent/WO2005028703A1/ja
Publication of JP2005089823A publication Critical patent/JP2005089823A/ja
Priority to US11/377,291 priority patent/US20060213444A1/en
Publication of JP2005089823A5 publication Critical patent/JP2005089823A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003325004A 2003-09-17 2003-09-17 成膜装置および成膜方法 Pending JP2005089823A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003325004A JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法
KR1020067005339A KR100878910B1 (ko) 2003-09-17 2004-09-14 성막 장치 및 성막 방법
EP04773039.5A EP1672093B1 (en) 2003-09-17 2004-09-14 Film-forming apparatus and film-forming method
CNB2004800105722A CN100494487C (zh) 2003-09-17 2004-09-14 成膜装置及成膜方法
PCT/JP2004/013357 WO2005028703A1 (ja) 2003-09-17 2004-09-14 成膜装置および成膜方法
US11/377,291 US20060213444A1 (en) 2003-09-17 2006-03-17 Deposition apparatus and deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003325004A JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法

Publications (2)

Publication Number Publication Date
JP2005089823A true JP2005089823A (ja) 2005-04-07
JP2005089823A5 JP2005089823A5 (https=) 2006-07-20

Family

ID=34372767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003325004A Pending JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法

Country Status (6)

Country Link
US (1) US20060213444A1 (https=)
EP (1) EP1672093B1 (https=)
JP (1) JP2005089823A (https=)
KR (1) KR100878910B1 (https=)
CN (1) CN100494487C (https=)
WO (1) WO2005028703A1 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
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KR100676396B1 (ko) 2005-06-09 2007-02-01 주식회사 케이씨텍 중성화빔을 이용한 표면처리장치
JP2008095131A (ja) * 2006-10-06 2008-04-24 Ngk Insulators Ltd 表面改質装置
JP2011238900A (ja) * 2010-04-16 2011-11-24 Canon Anelva Corp 磁気抵抗効果素子の製造方法
JP2013177284A (ja) * 2011-09-16 2013-09-09 Toyota Motor Corp プラズマｃｖｄ装置及び基板加熱保持台並びにカーボンナノチューブの製造方法
WO2014030414A1 (ja) * 2012-08-23 2014-02-27 東京エレクトロン株式会社 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
JP2014167142A (ja) * 2013-02-28 2014-09-11 Tokyo Electron Ltd カーボン膜形成方法及びカーボン膜
WO2015108065A1 (ja) * 2014-01-15 2015-07-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
KR20150085793A (ko) 2014-01-16 2015-07-24 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR20170032195A (ko) * 2015-09-14 2017-03-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2020009745A (ja) * 2018-04-20 2020-01-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔モジュール型高周波源

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JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070277735A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20100024732A1 (en) * 2006-06-02 2010-02-04 Nima Mokhlesi Systems for Flash Heating in Atomic Layer Deposition
JP2008198739A (ja) 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
CN101403108B (zh) * 2008-08-04 2012-05-02 李刚 化学气相淀积反应器和化学气相淀积方法
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
WO2011034057A1 (ja) * 2009-09-17 2011-03-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
JP5660804B2 (ja) * 2010-04-30 2015-01-28 東京エレクトロン株式会社 カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置
DE102011009347B4 (de) * 2010-11-29 2016-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
TW201239130A (en) * 2011-03-16 2012-10-01 I-Nan Lin Microwave plasma system
TWI638587B (zh) * 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
JP5803706B2 (ja) * 2012-02-02 2015-11-04 東京エレクトロン株式会社 成膜装置
JP5803714B2 (ja) * 2012-02-09 2015-11-04 東京エレクトロン株式会社 成膜装置
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JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
CN103774120B (zh) * 2013-12-31 2016-06-22 刘键 一种用于pecvd系统的匀气装置
KR20150116600A (ko) * 2014-04-08 2015-10-16 삼성전자주식회사 에피텍시얼막 형성 방법 및 이를 수행하는데 사용되는 기판 처리 장치
KR20160002543A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
JP7278123B2 (ja) * 2019-03-22 2023-05-19 東京エレクトロン株式会社 処理方法

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Cited By (18)

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Publication number Priority date Publication date Assignee Title
KR100676396B1 (ko) 2005-06-09 2007-02-01 주식회사 케이씨텍 중성화빔을 이용한 표면처리장치
JP2008095131A (ja) * 2006-10-06 2008-04-24 Ngk Insulators Ltd 表面改質装置
JP2011238900A (ja) * 2010-04-16 2011-11-24 Canon Anelva Corp 磁気抵抗効果素子の製造方法
JP2013177284A (ja) * 2011-09-16 2013-09-09 Toyota Motor Corp プラズマｃｖｄ装置及び基板加熱保持台並びにカーボンナノチューブの製造方法
KR102030223B1 (ko) * 2012-08-23 2019-10-08 도쿄엘렉트론가부시키가이샤 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조
WO2014030414A1 (ja) * 2012-08-23 2014-02-27 東京エレクトロン株式会社 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
JP2014116576A (ja) * 2012-08-23 2014-06-26 Tokyo Electron Ltd 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
KR20150046028A (ko) * 2012-08-23 2015-04-29 도쿄엘렉트론가부시키가이샤 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조
JP2014167142A (ja) * 2013-02-28 2014-09-11 Tokyo Electron Ltd カーボン膜形成方法及びカーボン膜
WO2015108065A1 (ja) * 2014-01-15 2015-07-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
JPWO2015108065A1 (ja) * 2014-01-15 2017-03-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
JP2015134943A (ja) * 2014-01-16 2015-07-27 東京エレクトロン株式会社 基板処理装置
KR20150085793A (ko) 2014-01-16 2015-07-24 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR20170032195A (ko) * 2015-09-14 2017-03-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR102616555B1 (ko) 2015-09-14 2023-12-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2020009745A (ja) * 2018-04-20 2020-01-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔モジュール型高周波源
JP7510746B2 (ja) 2018-04-20 2024-07-04 アプライド マテリアルズ インコーポレイテッド 遠隔モジュール型高周波源
US12518948B2 (en) 2018-04-20 2026-01-06 Applied Materials, Inc. Remote modular high-frequency source

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EP1672093A4 (en) 2007-04-18
US20060213444A1 (en) 2006-09-28
EP1672093A1 (en) 2006-06-21
KR20060085334A (ko) 2006-07-26
EP1672093B1 (en) 2013-07-10
WO2005028703A1 (ja) 2005-03-31
CN1777695A (zh) 2006-05-24
CN100494487C (zh) 2009-06-03

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