KR100878910B1 - 성막 장치 및 성막 방법 - Google Patents

성막 장치 및 성막 방법 Download PDF

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KR100878910B1
KR100878910B1 KR1020067005339A KR20067005339A KR100878910B1 KR 100878910 B1 KR100878910 B1 KR 100878910B1 KR 1020067005339 A KR1020067005339 A KR 1020067005339A KR 20067005339 A KR20067005339 A KR 20067005339A KR 100878910 B1 KR100878910 B1 KR 100878910B1
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gas
chamber
plasma
film forming
film
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KR20060085334A (ko
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세이지 사무까와
도시히사 노자와
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도쿄엘렉트론가부시키가이샤
세이지 사무까와
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020067005339A 2003-09-17 2004-09-14 성막 장치 및 성막 방법 Expired - Fee Related KR100878910B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003325004A JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法
JPJP-P-2003-00325004 2003-09-17

Publications (2)

Publication Number Publication Date
KR20060085334A KR20060085334A (ko) 2006-07-26
KR100878910B1 true KR100878910B1 (ko) 2009-01-15

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Country Status (6)

Country Link
US (1) US20060213444A1 (https=)
EP (1) EP1672093B1 (https=)
JP (1) JP2005089823A (https=)
KR (1) KR100878910B1 (https=)
CN (1) CN100494487C (https=)
WO (1) WO2005028703A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150085793A (ko) * 2014-01-16 2015-07-24 도쿄엘렉트론가부시키가이샤 기판 처리 장치

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KR100676396B1 (ko) 2005-06-09 2007-02-01 주식회사 케이씨텍 중성화빔을 이용한 표면처리장치
JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070277735A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20100024732A1 (en) * 2006-06-02 2010-02-04 Nima Mokhlesi Systems for Flash Heating in Atomic Layer Deposition
JP4963923B2 (ja) * 2006-10-06 2012-06-27 日本碍子株式会社 表面改質装置
JP2008198739A (ja) 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
CN101403108B (zh) * 2008-08-04 2012-05-02 李刚 化学气相淀积反应器和化学气相淀积方法
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
WO2011034057A1 (ja) * 2009-09-17 2011-03-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
JP5707174B2 (ja) * 2010-04-16 2015-04-22 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP5660804B2 (ja) * 2010-04-30 2015-01-28 東京エレクトロン株式会社 カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置
DE102011009347B4 (de) * 2010-11-29 2016-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
TW201239130A (en) * 2011-03-16 2012-10-01 I-Nan Lin Microwave plasma system
JP5984536B2 (ja) * 2011-09-16 2016-09-06 国立大学法人名古屋大学 プラズマｃｖｄ装置及びカーボンナノチューブの製造方法
TWI638587B (zh) * 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
JP5803706B2 (ja) * 2012-02-02 2015-11-04 東京エレクトロン株式会社 成膜装置
JP5803714B2 (ja) * 2012-02-09 2015-11-04 東京エレクトロン株式会社 成膜装置
US20130284093A1 (en) * 2012-04-30 2013-10-31 Semes Co., Ltd. Substrate treating apparatus
JP6172660B2 (ja) * 2012-08-23 2017-08-02 東京エレクトロン株式会社 成膜装置、及び、低誘電率膜を形成する方法
JP2014167142A (ja) * 2013-02-28 2014-09-11 Tokyo Electron Ltd カーボン膜形成方法及びカーボン膜
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
CN103774120B (zh) * 2013-12-31 2016-06-22 刘键 一种用于pecvd系统的匀气装置
JPWO2015108065A1 (ja) * 2014-01-15 2017-03-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
KR20150116600A (ko) * 2014-04-08 2015-10-16 삼성전자주식회사 에피텍시얼막 형성 방법 및 이를 수행하는데 사용되는 기판 처리 장치
KR20160002543A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
JP2017059579A (ja) * 2015-09-14 2017-03-23 東京エレクトロン株式会社 プラズマ処理装置
US11393661B2 (en) * 2018-04-20 2022-07-19 Applied Materials, Inc. Remote modular high-frequency source
JP7278123B2 (ja) * 2019-03-22 2023-05-19 東京エレクトロン株式会社 処理方法

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JP2000144421A (ja) * 1998-11-09 2000-05-26 Tokyo Electron Ltd 成膜装置および成膜方法
JP2000345349A (ja) * 1999-06-04 2000-12-12 Anelva Corp Ｃｖｄ装置
JP2002016056A (ja) * 2000-06-29 2002-01-18 Nec Corp リモートプラズマｃｖｄ装置及び膜形成方法
JP2004260434A (ja) 2003-02-25 2004-09-16 Nec Access Technica Ltd 小型無線機用アンテナ装置

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JP2000144421A (ja) * 1998-11-09 2000-05-26 Tokyo Electron Ltd 成膜装置および成膜方法
JP2000345349A (ja) * 1999-06-04 2000-12-12 Anelva Corp Ｃｖｄ装置
JP2002016056A (ja) * 2000-06-29 2002-01-18 Nec Corp リモートプラズマｃｖｄ装置及び膜形成方法
JP2004260434A (ja) 2003-02-25 2004-09-16 Nec Access Technica Ltd 小型無線機用アンテナ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150085793A (ko) * 2014-01-16 2015-07-24 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR101658304B1 (ko) * 2014-01-16 2016-09-22 도쿄엘렉트론가부시키가이샤 기판 처리 장치

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Publication number Publication date
EP1672093A4 (en) 2007-04-18
US20060213444A1 (en) 2006-09-28
EP1672093A1 (en) 2006-06-21
KR20060085334A (ko) 2006-07-26
EP1672093B1 (en) 2013-07-10
WO2005028703A1 (ja) 2005-03-31
CN1777695A (zh) 2006-05-24
JP2005089823A (ja) 2005-04-07
CN100494487C (zh) 2009-06-03

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