JP2005078073A - 有機電界発光表示装置 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 61
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 2
- 238000005192 partition Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 72
- 238000005530 etching Methods 0.000 description 13
- 239000002184 metal Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
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- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
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Abstract
【解決手段】画素が配置されるアレイ部(A)と、外部電源と接触するパッド部(P)とが定義された基板上において、ソース/ドレーン電極(107a,107b)を含む半導体構造物上に形成され、アレイ部(A)及びパッド部(P)におけるソース/ドレーン電極(107a,107b)の所定の領域を露出させるビアホール200を備え、アレイ部(A)とパッド部(P)との間の前記ビアホール200の周辺の厚さが同一な平坦化膜(108,109);ビアホール200内に埋められた導電体層110;導電体層110を含む平坦化膜112の上部の全面に形成され、アレイ部(A)の導電体層110の所定の領域を露出させる画素領域112を備えた隔壁111;及び画素領域112に形成された有機EL層;を含む。
【選択図】図2
Description
本発明の他の技術的課題は、アレイ部とパッド部との間の平坦化膜の厚さの差を除去することである。
102 遮断層
103 多結晶シリコン層
104 ゲート絶縁膜
105a、105b ゲート電極
106 層間絶縁膜
107a、107b ソース/ドレーン電極
108、109 平坦化膜
111 隔壁
112 画素領域
200 ビアホール
103a 下部ソース領域
103c 下部ドレーン領域
110 導電体層
113 有機EL層
300 ダミーゲートパターン
Claims (18)
- 画素が配置されるアレイ部と、外部電源と接触するパッド部とが定義された基板上において、ソース/ドレーン電極を含む半導体構造物上に形成され、前記アレイ部及びパッド部におけるソース/ドレーン電極の所定の領域を露出させるビアホールを備え、前記アレイ部とパッド部との間の前記ビアホールの周辺の厚さが同一な平坦化膜と、
前記ビアホール内に埋められた導電体層と、
前記導電体層を含む平坦化膜の上部の全面に形成され、前記アレイ部の導電体層の所定の領域を露出させる画素領域を備えた隔壁と、
前記画素領域に形成された有機EL層と、
を有することを特徴とする有機電界発光表示装置。 - 前記パッド部のビアホールの下部には、基板、ゲート絶縁膜、ゲート電極、層間絶縁膜、ソース/ドレーン電極が順に積層され、
前記アレイ部のビアホールの下部には、基板、ゲート絶縁膜、ダミーゲートパターン、層間絶縁膜、ソース/ドレーン電極が順に積層されることを特徴とする請求項1に記載の有機電界発光表示装置。 - 前記ダミーゲートパターンは前記ゲート電極と同時に形成されて、同一物質からなり、同一な厚さを有することを特徴とする請求項2に記載の有機電界発光表示装置。
- 前記アレイ部のビアホールの下部には、基板、ゲート絶縁膜、層間絶縁膜、ソース/ドレーン電極が順に積層され、
前記パッド部のビアホールの下部には、基板、ゲート絶縁膜、層間絶縁膜、ソース/ドレーン電極が順に積層されることを特徴とする請求項1に記載の有機電界発光表示装置。 - 前記平坦化膜は、均一な厚さを有し、下部の表面段差を露出する第1絶縁膜と、前記第1絶縁膜上に形成され、上面が平坦な第2絶縁膜とを有することを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記アレイ部のソース/ドレーン電極の下部には、下部ソース領域及び下部ドレーン領域が各々連結されるように形成されることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記下部ソース領域及び下部ドレーン領域は、多結晶シリコン層の両側の縁に不純物がドーピングされることによって各々形成されたものであり、前記下部ソース領域及び下部ドレーン領域の間の多結晶シリコン層はチャンネル領域であることを特徴とする請求項6に記載の有機電界発光表示装置。
- 前記ゲート電極及びソース/ドレーン電極は金属物質からなることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記基板は絶縁物質からなり、
前記基板と多結晶シリコン層との界面と、前記基板とゲート絶縁膜との界面に形成された遮断層をさらに有することを特徴とする請求項7に記載の有機電界発光表示装置。 - 画素が配置されるアレイ部と、外部電源と接触するパッド部とが定義された基板上において、半導体構造物上に形成され、前記アレイ部とパッド部との間の上面の高さが同一なソース/ドレーン電極と、
前記ソース/ドレーン電極を含む半導体構造物上に形成され、前記アレイ部及びパッド部におけるソース/ドレーン電極の所定の領域を露出させるビアホールを備えた平坦化膜と、
前記ビアホール内に埋められた導電体層と、
前記導電体層を含む平坦化膜の上部の全面に形成され、前記アレイ部の導電体層の所定の領域を露出させる画素領域を備えた隔壁と、
前記画素領域に形成された有機EL層と、
を有することを特徴とする有機電界発光表示装置。 - 前記パッド部のビアホールの下部には、基板、ゲート絶縁膜、ゲート電極、層間絶縁膜、ソース/ドレーン電極が順に積層され、
前記アレイ部のビアホールの下部には、基板、ゲート絶縁膜、ダミーゲートパターン、層間絶縁膜、ソース/ドレーン電極が順に積層されることを特徴とする請求項10に記載の有機電界発光表示装置。 - 前記ダミーゲートパターンは前記ゲート電極と同時に形成されて、同一物質からなり、同一な厚さを有することを特徴とする請求項11に記載の有機電界発光表示装置。
- 前記アレイ部のビアホールの下部には、基板、ゲート絶縁膜、層間絶縁膜、ソース/ドレーン電極が順に積層され、
前記パッド部のビアホールの下部には、基板、ゲート絶縁膜、層間絶縁膜、ソース/ドレーン電極が順に積層されることを特徴とする請求項10に記載の有機電界発光表示装置。 - 前記平坦化膜は、均一な厚さを有し、下部の表面段差を露出する第1絶縁膜と、前記第1絶縁膜上に形成され、上面が平坦な第2絶縁膜とを有することを特徴とする請求項10に記載の有機電界発光表示装置。
- 前記アレイ部のソース/ドレーン電極の下部には、下部ソース領域及び下部ドレーン領域が各々連結されるように形成されることを特徴とする請求項10に記載の有機電界発光表示装置。
- 前記下部ソース領域及び下部ドレーン領域は、多結晶シリコン層の両側の縁に不純物がドーピングされることによって各々形成されたものであり、前記下部ソース領域及び下部ドレーン領域の間の多結晶シリコン層はチャンネル領域であることを特徴とする請求項15に記載の有機電界発光表示装置。
- 前記ゲート電極及びソース/ドレーン電極は金属物質からなることを特徴とする請求項10に記載の有機電界発光表示装置。
- 前記基板は絶縁物質からなり、
前記基板と多結晶シリコン層との界面と、前記基板とゲート絶縁膜との界面に形成された遮断層をさらに有することを特徴とする請求項16に記載の有機電界発光表示装置。
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KR1020030060016A KR100551046B1 (ko) | 2003-08-28 | 2003-08-28 | 유기 이엘 소자 |
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JP (1) | JP2005078073A (ja) |
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Cited By (3)
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KR100778039B1 (ko) | 2005-09-27 | 2007-11-21 | 세이코 엡슨 가부시키가이샤 | 발광 장치, 발광 장치의 제조 방법 및 전자 기기 |
JP2010020311A (ja) * | 2008-07-11 | 2010-01-28 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
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- 2004-08-27 CN CNB200410068283XA patent/CN100449773C/zh not_active Expired - Lifetime
- 2004-08-27 US US10/927,193 patent/US7211826B2/en not_active Expired - Lifetime
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JP2010020311A (ja) * | 2008-07-11 | 2010-01-28 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
KR20170125418A (ko) * | 2008-10-03 | 2017-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
KR101961632B1 (ko) * | 2008-10-03 | 2019-03-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
US10573665B2 (en) | 2008-10-03 | 2020-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10910408B2 (en) | 2008-10-03 | 2021-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US11574932B2 (en) | 2008-10-03 | 2023-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US12094884B2 (en) | 2008-10-03 | 2024-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
Also Published As
Publication number | Publication date |
---|---|
CN100449773C (zh) | 2009-01-07 |
KR20050023014A (ko) | 2005-03-09 |
KR100551046B1 (ko) | 2006-02-09 |
US20050045882A1 (en) | 2005-03-03 |
CN1592520A (zh) | 2005-03-09 |
US7211826B2 (en) | 2007-05-01 |
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