JP2005064486A5 - - Google Patents

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Publication number
JP2005064486A5
JP2005064486A5 JP2004215678A JP2004215678A JP2005064486A5 JP 2005064486 A5 JP2005064486 A5 JP 2005064486A5 JP 2004215678 A JP2004215678 A JP 2004215678A JP 2004215678 A JP2004215678 A JP 2004215678A JP 2005064486 A5 JP2005064486 A5 JP 2005064486A5
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JP
Japan
Prior art keywords
semiconductor film
thin film
film transistor
crystalline semiconductor
ridges
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JP2004215678A
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English (en)
Japanese (ja)
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JP2005064486A (ja
JP4624023B2 (ja
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Priority to JP2004215678A priority Critical patent/JP4624023B2/ja
Priority claimed from JP2004215678A external-priority patent/JP4624023B2/ja
Publication of JP2005064486A publication Critical patent/JP2005064486A/ja
Publication of JP2005064486A5 publication Critical patent/JP2005064486A5/ja
Application granted granted Critical
Publication of JP4624023B2 publication Critical patent/JP4624023B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004215678A 2003-07-31 2004-07-23 半導体装置、及びその作製方法 Expired - Fee Related JP4624023B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004215678A JP4624023B2 (ja) 2003-07-31 2004-07-23 半導体装置、及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003284536 2003-07-31
JP2004215678A JP4624023B2 (ja) 2003-07-31 2004-07-23 半導体装置、及びその作製方法

Publications (3)

Publication Number Publication Date
JP2005064486A JP2005064486A (ja) 2005-03-10
JP2005064486A5 true JP2005064486A5 (https=) 2007-07-12
JP4624023B2 JP4624023B2 (ja) 2011-02-02

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ID=34380273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004215678A Expired - Fee Related JP4624023B2 (ja) 2003-07-31 2004-07-23 半導体装置、及びその作製方法

Country Status (1)

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JP (1) JP4624023B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5090690B2 (ja) * 2006-08-28 2012-12-05 三菱電機株式会社 半導体薄膜の製造方法、薄膜トランジスタの製造方法、及び半導体薄膜の製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260285A (ja) * 1996-03-25 1997-10-03 Sharp Corp 半導体装置の製造方法
JP4038309B2 (ja) * 1999-09-10 2008-01-23 セイコーエプソン株式会社 半導体装置の製造方法、アクティブマトリクス基板の製造方法
JP2001127302A (ja) * 1999-10-28 2001-05-11 Hitachi Ltd 半導体薄膜基板、半導体装置、半導体装置の製造方法および電子装置
JP2002151410A (ja) * 2000-08-22 2002-05-24 Sony Corp 結晶質半導体材料の製造方法および半導体装置の製造方法
JP4316149B2 (ja) * 2001-02-20 2009-08-19 シャープ株式会社 薄膜トランジスタ製造方法
JP2002353141A (ja) * 2001-03-09 2002-12-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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