JP2009049143A5 - - Google Patents

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Publication number
JP2009049143A5
JP2009049143A5 JP2007213081A JP2007213081A JP2009049143A5 JP 2009049143 A5 JP2009049143 A5 JP 2009049143A5 JP 2007213081 A JP2007213081 A JP 2007213081A JP 2007213081 A JP2007213081 A JP 2007213081A JP 2009049143 A5 JP2009049143 A5 JP 2009049143A5
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JP
Japan
Prior art keywords
semiconductor layer
light intensity
laser beam
semiconductor region
manufacturing
Prior art date
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Application number
JP2007213081A
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English (en)
Japanese (ja)
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JP2009049143A (ja
JP5307994B2 (ja
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Priority to JP2007213081A priority Critical patent/JP5307994B2/ja
Priority claimed from JP2007213081A external-priority patent/JP5307994B2/ja
Publication of JP2009049143A publication Critical patent/JP2009049143A/ja
Publication of JP2009049143A5 publication Critical patent/JP2009049143A5/ja
Application granted granted Critical
Publication of JP5307994B2 publication Critical patent/JP5307994B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007213081A 2007-08-17 2007-08-17 半導体装置の作製方法 Expired - Fee Related JP5307994B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007213081A JP5307994B2 (ja) 2007-08-17 2007-08-17 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007213081A JP5307994B2 (ja) 2007-08-17 2007-08-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009049143A JP2009049143A (ja) 2009-03-05
JP2009049143A5 true JP2009049143A5 (https=) 2010-09-09
JP5307994B2 JP5307994B2 (ja) 2013-10-02

Family

ID=40501105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007213081A Expired - Fee Related JP5307994B2 (ja) 2007-08-17 2007-08-17 半導体装置の作製方法

Country Status (1)

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JP (1) JP5307994B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101870460B1 (ko) 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011061978A1 (ja) * 2009-11-19 2011-05-26 シャープ株式会社 半導体装置の製造方法、半導体装置、及び表示装置
US8476744B2 (en) * 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
JP5694673B2 (ja) * 2010-02-26 2015-04-01 株式会社ジャパンディスプレイ 表示装置およびその製造方法
WO2025013673A1 (ja) * 2023-07-07 2025-01-16 大熊ダイヤモンドデバイス株式会社 Ｆｅｔ、電気機械器具、及び、ｆｅｔの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3156776B2 (ja) * 1998-08-03 2001-04-16 日本電気株式会社 レーザ照射方法
JP3252811B2 (ja) * 1998-11-05 2002-02-04 日本電気株式会社 半導体薄膜の製造方法
JP2005045209A (ja) * 2003-07-09 2005-02-17 Mitsubishi Electric Corp レーザアニール方法
JP4577114B2 (ja) * 2005-06-23 2010-11-10 ソニー株式会社 薄膜トランジスタの製造方法および表示装置の製造方法

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