JP2005064037A5 - - Google Patents
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- Publication number
- JP2005064037A5 JP2005064037A5 JP2003207379A JP2003207379A JP2005064037A5 JP 2005064037 A5 JP2005064037 A5 JP 2005064037A5 JP 2003207379 A JP2003207379 A JP 2003207379A JP 2003207379 A JP2003207379 A JP 2003207379A JP 2005064037 A5 JP2005064037 A5 JP 2005064037A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003207379A JP2005064037A (ja) | 2003-08-12 | 2003-08-12 | プラズマ処理装置及びアッシング方法 |
| KR1020067002878A KR100835630B1 (ko) | 2003-08-12 | 2004-08-06 | 플라즈마 처리 장치 및 에싱 방법 |
| PCT/JP2004/011657 WO2005015628A1 (ja) | 2003-08-12 | 2004-08-06 | プラズマ処理装置及びアッシング方法 |
| EP04771632A EP1655770A4 (en) | 2003-08-12 | 2004-08-06 | PLASMA PROCESSING DEVICE AND ASHING METHOD |
| CNB2004800261699A CN100466193C (zh) | 2003-08-12 | 2004-08-06 | 等离子体处理装置和灰化方法 |
| US10/567,665 US7491908B2 (en) | 2003-08-12 | 2004-08-06 | Plasma processing device and ashing method |
| KR1020087008103A KR100895253B1 (ko) | 2003-08-12 | 2004-08-06 | 플라즈마 처리 장치 및 에싱 방법 |
| TW093124253A TW200522198A (en) | 2003-08-12 | 2004-08-12 | Plasma treatment apparatus and ashing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003207379A JP2005064037A (ja) | 2003-08-12 | 2003-08-12 | プラズマ処理装置及びアッシング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005064037A JP2005064037A (ja) | 2005-03-10 |
| JP2005064037A5 true JP2005064037A5 (enExample) | 2006-06-15 |
Family
ID=34131427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003207379A Withdrawn JP2005064037A (ja) | 2003-08-12 | 2003-08-12 | プラズマ処理装置及びアッシング方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7491908B2 (enExample) |
| EP (1) | EP1655770A4 (enExample) |
| JP (1) | JP2005064037A (enExample) |
| KR (2) | KR100895253B1 (enExample) |
| CN (1) | CN100466193C (enExample) |
| TW (1) | TW200522198A (enExample) |
| WO (1) | WO2005015628A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050284573A1 (en) * | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
| JP5236225B2 (ja) * | 2007-07-31 | 2013-07-17 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| WO2009063755A1 (ja) * | 2007-11-14 | 2009-05-22 | Tokyo Electron Limited | プラズマ処理装置および半導体基板のプラズマ処理方法 |
| US8741778B2 (en) * | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
| US10049881B2 (en) | 2011-08-10 | 2018-08-14 | Applied Materials, Inc. | Method and apparatus for selective nitridation process |
| JP5780928B2 (ja) * | 2011-11-22 | 2015-09-16 | 株式会社アルバック | プラズマ処理装置 |
| WO2015171335A1 (en) | 2014-05-06 | 2015-11-12 | Applied Materials, Inc. | Directional treatment for multi-dimensional device processing |
| CN108778739B (zh) * | 2016-03-13 | 2021-07-16 | 应用材料公司 | 用于选择性干式蚀刻的方法及设备 |
| US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
| US20200126769A1 (en) * | 2018-10-23 | 2020-04-23 | Hzo, Inc. | Plasma ashing of coated substrates |
| US20220223383A1 (en) * | 2019-04-05 | 2022-07-14 | Applied Materials, Inc. | Process system with variable flow valve |
| US11508573B2 (en) | 2019-12-31 | 2022-11-22 | Micron Technology, Inc. | Plasma doping of gap fill materials |
| JP7605569B2 (ja) * | 2021-07-21 | 2024-12-24 | 東京エレクトロン株式会社 | プラズマ源及びプラズマ処理装置 |
| US20230059730A1 (en) * | 2021-08-19 | 2023-02-23 | University Of Maryland, College Park | Atomic-scale materials processing based on electron beam induced etching assisted by remote plasma |
| WO2024196944A1 (en) * | 2023-03-21 | 2024-09-26 | Mks Instruments, Inc. | Real time radical output monitoring using optical emission spectroscopy |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5449073A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Plasma processing unit |
| US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
| JPH0945495A (ja) | 1995-08-02 | 1997-02-14 | Ulvac Japan Ltd | プラズマ処理装置 |
| US5866986A (en) * | 1996-08-05 | 1999-02-02 | Integrated Electronic Innovations, Inc. | Microwave gas phase plasma source |
| JPH10298787A (ja) * | 1997-04-25 | 1998-11-10 | Shibaura Eng Works Co Ltd | ドライエッチング装置 |
| JP3218348B2 (ja) | 1998-05-21 | 2001-10-15 | 株式会社アルバック | プラズマアッシング方法 |
| JP2000012526A (ja) | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
| US6383301B1 (en) * | 1998-08-04 | 2002-05-07 | E. I. Du Pont De Nemours And Company | Treatment of deagglomerated particles with plasma-activated species |
| JP2000100790A (ja) | 1998-09-22 | 2000-04-07 | Canon Inc | プラズマ処理装置及びそれを用いた処理方法 |
| JP2000183040A (ja) * | 1998-12-15 | 2000-06-30 | Canon Inc | 有機層間絶縁膜エッチング後のレジストアッシング方法 |
| US6281135B1 (en) | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
| US6287643B1 (en) * | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
| JP2001115267A (ja) | 1999-10-19 | 2001-04-24 | Canon Inc | プラズマ処理装置及び処理方法 |
| US6426304B1 (en) * | 2000-06-30 | 2002-07-30 | Lam Research Corporation | Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications |
| JP2002075961A (ja) | 2000-08-24 | 2002-03-15 | Toshiba Corp | 半導体装置の製造方法 |
| US7083991B2 (en) * | 2002-01-24 | 2006-08-01 | Novellus Systems, Inc. | Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments |
-
2003
- 2003-08-12 JP JP2003207379A patent/JP2005064037A/ja not_active Withdrawn
-
2004
- 2004-08-06 KR KR1020087008103A patent/KR100895253B1/ko not_active Expired - Lifetime
- 2004-08-06 CN CNB2004800261699A patent/CN100466193C/zh not_active Expired - Lifetime
- 2004-08-06 KR KR1020067002878A patent/KR100835630B1/ko not_active Expired - Lifetime
- 2004-08-06 US US10/567,665 patent/US7491908B2/en not_active Expired - Fee Related
- 2004-08-06 EP EP04771632A patent/EP1655770A4/en not_active Withdrawn
- 2004-08-06 WO PCT/JP2004/011657 patent/WO2005015628A1/ja not_active Ceased
- 2004-08-12 TW TW093124253A patent/TW200522198A/zh not_active IP Right Cessation