JP2005057260A - 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置 - Google Patents

薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置 Download PDF

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Publication number
JP2005057260A
JP2005057260A JP2004212977A JP2004212977A JP2005057260A JP 2005057260 A JP2005057260 A JP 2005057260A JP 2004212977 A JP2004212977 A JP 2004212977A JP 2004212977 A JP2004212977 A JP 2004212977A JP 2005057260 A JP2005057260 A JP 2005057260A
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Japan
Prior art keywords
thin film
film transistor
circuit device
transistor circuit
wiring
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Pending
Application number
JP2004212977A
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English (en)
Japanese (ja)
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JP2005057260A5 (enExample
Inventor
Hiroaki Tanaka
宏明 田中
Seiji Suzuki
聖二 鈴木
Yukiyasu Yasuda
亨寧 安田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianma Japan Ltd
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NEC LCD Technologies Ltd
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Filing date
Publication date
Application filed by NEC LCD Technologies Ltd filed Critical NEC LCD Technologies Ltd
Priority to JP2004212977A priority Critical patent/JP2005057260A/ja
Priority to US10/895,404 priority patent/US7105896B2/en
Priority to KR1020040057114A priority patent/KR100702284B1/ko
Priority to CNB2004100544435A priority patent/CN100370349C/zh
Priority to TW093121918A priority patent/TWI253618B/zh
Publication of JP2005057260A publication Critical patent/JP2005057260A/ja
Priority to US11/384,342 priority patent/US7341898B2/en
Priority to KR1020060110237A priority patent/KR20070003719A/ko
Publication of JP2005057260A5 publication Critical patent/JP2005057260A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004212977A 2003-07-22 2004-07-21 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置 Pending JP2005057260A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004212977A JP2005057260A (ja) 2003-07-22 2004-07-21 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置
US10/895,404 US7105896B2 (en) 2003-07-22 2004-07-21 Thin film transistor circuit device, production method thereof and liquid crystal display using the think film transistor circuit device
KR1020040057114A KR100702284B1 (ko) 2003-07-22 2004-07-22 박막 트랜지스터 회로 장치 및 상기 박막 트랜지스터 회로 장치를 이용한 액정 표시 장치
CNB2004100544435A CN100370349C (zh) 2003-07-22 2004-07-22 薄膜晶体管电路器件及其制造方法、以及液晶显示设备
TW093121918A TWI253618B (en) 2003-07-22 2004-07-22 Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
US11/384,342 US7341898B2 (en) 2003-07-22 2006-03-21 Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
KR1020060110237A KR20070003719A (ko) 2003-07-22 2006-11-09 박막 트랜지스터 회로 장치의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003277459 2003-07-22
JP2004212977A JP2005057260A (ja) 2003-07-22 2004-07-21 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置

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Publication Number Publication Date
JP2005057260A true JP2005057260A (ja) 2005-03-03
JP2005057260A5 JP2005057260A5 (enExample) 2007-08-02

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JP2004212977A Pending JP2005057260A (ja) 2003-07-22 2004-07-21 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置

Country Status (5)

Country Link
US (2) US7105896B2 (enExample)
JP (1) JP2005057260A (enExample)
KR (2) KR100702284B1 (enExample)
CN (1) CN100370349C (enExample)
TW (1) TWI253618B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048878A (ja) * 2005-08-09 2007-02-22 Mitsubishi Electric Corp 半導体装置
JP2008133529A (ja) * 2006-08-29 2008-06-12 Rohm & Haas Electronic Materials Llc 剥離方法
US7888148B2 (en) 2006-09-29 2011-02-15 Samsung Electronics Co., Ltd. Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005062802A (ja) * 2003-07-28 2005-03-10 Advanced Display Inc 薄膜トランジスタアレイ基板の製法
KR101061850B1 (ko) * 2004-09-08 2011-09-02 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조방법
TWI252587B (en) * 2004-12-14 2006-04-01 Quanta Display Inc Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display
US20070259190A1 (en) * 2006-05-02 2007-11-08 Jau-Jier Chu ITO transparent substrate with high resistance at low-temperature sputtering process and method for producing the same
US20070262311A1 (en) * 2006-05-11 2007-11-15 Toppoly Optoelectronics Corp. Flat panel display and fabrication method and thereof
TW200820444A (en) * 2006-10-27 2008-05-01 Chunghwa Picture Tubes Ltd Thin film transistor and fabrication method thereof
TWI374510B (en) 2008-04-18 2012-10-11 Au Optronics Corp Gate driver on array of a display and method of making device of a display
KR101909139B1 (ko) * 2011-02-07 2018-12-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR102708594B1 (ko) 2016-09-07 2024-09-23 삼성디스플레이 주식회사 표시 장치
US9666482B1 (en) * 2016-09-14 2017-05-30 Infineon Technologies Ag Self aligned silicon carbide contact formation using protective layer
CN110928085B (zh) 2019-11-26 2021-01-15 Tcl华星光电技术有限公司 阵列基板及显示面板

Citations (6)

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JPH10293321A (ja) * 1997-04-17 1998-11-04 Mitsubishi Electric Corp 液晶表示装置およびその製造方法
JPH1138440A (ja) * 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2000284326A (ja) * 1999-03-30 2000-10-13 Hitachi Ltd 液晶表示装置とその製造方法
JP2000307118A (ja) * 1999-04-21 2000-11-02 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP2002327264A (ja) * 2001-04-26 2002-11-15 Hitachi Metals Ltd 薄膜形成用スパッタリングターゲット
JP2002365640A (ja) * 2001-03-26 2002-12-18 Lg Phillips Lcd Co Ltd 液晶表示装置及びその製造方法

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JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
US5530573A (en) * 1993-05-27 1996-06-25 Sharp Kabushiki Kaisha Multiple domain liquid crystal display having a cell thickness divided by helical pitch equal to 1/8 or less
JPH0926598A (ja) 1995-07-10 1997-01-28 Hitachi Ltd アクティブマトリクス型液晶ディスプレイ装置
KR100239778B1 (ko) * 1996-12-03 2000-01-15 구본준 액정표시장치 및 그 제조방법
JPH1187068A (ja) * 1997-07-15 1999-03-30 Tdk Corp 有機ｅｌ素子およびその製造方法
JPH11259016A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板の製造方法
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10293321A (ja) * 1997-04-17 1998-11-04 Mitsubishi Electric Corp 液晶表示装置およびその製造方法
JPH1138440A (ja) * 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2000284326A (ja) * 1999-03-30 2000-10-13 Hitachi Ltd 液晶表示装置とその製造方法
JP2000307118A (ja) * 1999-04-21 2000-11-02 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP2002365640A (ja) * 2001-03-26 2002-12-18 Lg Phillips Lcd Co Ltd 液晶表示装置及びその製造方法
JP2002327264A (ja) * 2001-04-26 2002-11-15 Hitachi Metals Ltd 薄膜形成用スパッタリングターゲット

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007048878A (ja) * 2005-08-09 2007-02-22 Mitsubishi Electric Corp 半導体装置
JP2008133529A (ja) * 2006-08-29 2008-06-12 Rohm & Haas Electronic Materials Llc 剥離方法
US7888148B2 (en) 2006-09-29 2011-02-15 Samsung Electronics Co., Ltd. Signal line for a display device, etchant, thin film transistor panel, and method for manufacturing the same

Also Published As

Publication number Publication date
KR100702284B1 (ko) 2007-03-30
CN1601360A (zh) 2005-03-30
KR20070003719A (ko) 2007-01-05
TWI253618B (en) 2006-04-21
US7341898B2 (en) 2008-03-11
US20060175611A1 (en) 2006-08-10
US7105896B2 (en) 2006-09-12
CN100370349C (zh) 2008-02-20
KR20050011725A (ko) 2005-01-29
US20050056839A1 (en) 2005-03-17
TW200515355A (en) 2005-05-01

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