CN100370349C - 薄膜晶体管电路器件及其制造方法、以及液晶显示设备 - Google Patents
薄膜晶体管电路器件及其制造方法、以及液晶显示设备 Download PDFInfo
- Publication number
- CN100370349C CN100370349C CNB2004100544435A CN200410054443A CN100370349C CN 100370349 C CN100370349 C CN 100370349C CN B2004100544435 A CNB2004100544435 A CN B2004100544435A CN 200410054443 A CN200410054443 A CN 200410054443A CN 100370349 C CN100370349 C CN 100370349C
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- China
- Prior art keywords
- thin film
- film transistor
- wiring
- circuit device
- molybdenum alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 42
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 22
- 239000011733 molybdenum Substances 0.000 claims description 22
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 15
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 15
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- 239000010703 silicon Substances 0.000 claims description 7
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- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
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- 239000004332 silver Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 230000000694 effects Effects 0.000 description 4
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
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- 229910052720 vanadium Inorganic materials 0.000 description 2
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- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- JWJYBAUJHLXQJT-UHFFFAOYSA-N [O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[Bk+3] Chemical compound [O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[Bk+3] JWJYBAUJHLXQJT-UHFFFAOYSA-N 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
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- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP277459/2003 | 2003-07-22 | ||
| JP2003277459 | 2003-07-22 | ||
| JP2004212977A JP2005057260A (ja) | 2003-07-22 | 2004-07-21 | 薄膜トランジスタ回路装置およびその製造方法および薄膜トランジスタ回路装置を用いた液晶表示装置 |
| JP212977/2004 | 2004-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1601360A CN1601360A (zh) | 2005-03-30 |
| CN100370349C true CN100370349C (zh) | 2008-02-20 |
Family
ID=34277594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100544435A Expired - Lifetime CN100370349C (zh) | 2003-07-22 | 2004-07-22 | 薄膜晶体管电路器件及其制造方法、以及液晶显示设备 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7105896B2 (enExample) |
| JP (1) | JP2005057260A (enExample) |
| KR (2) | KR100702284B1 (enExample) |
| CN (1) | CN100370349C (enExample) |
| TW (1) | TWI253618B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005062802A (ja) * | 2003-07-28 | 2005-03-10 | Advanced Display Inc | 薄膜トランジスタアレイ基板の製法 |
| KR101061850B1 (ko) * | 2004-09-08 | 2011-09-02 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조방법 |
| TWI252587B (en) * | 2004-12-14 | 2006-04-01 | Quanta Display Inc | Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display |
| JP2007048878A (ja) * | 2005-08-09 | 2007-02-22 | Mitsubishi Electric Corp | 半導体装置 |
| US20070259190A1 (en) * | 2006-05-02 | 2007-11-08 | Jau-Jier Chu | ITO transparent substrate with high resistance at low-temperature sputtering process and method for producing the same |
| US20070262311A1 (en) * | 2006-05-11 | 2007-11-15 | Toppoly Optoelectronics Corp. | Flat panel display and fabrication method and thereof |
| JP2008133529A (ja) * | 2006-08-29 | 2008-06-12 | Rohm & Haas Electronic Materials Llc | 剥離方法 |
| KR101326128B1 (ko) * | 2006-09-29 | 2013-11-06 | 삼성디스플레이 주식회사 | 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법 |
| TW200820444A (en) * | 2006-10-27 | 2008-05-01 | Chunghwa Picture Tubes Ltd | Thin film transistor and fabrication method thereof |
| TWI374510B (en) | 2008-04-18 | 2012-10-11 | Au Optronics Corp | Gate driver on array of a display and method of making device of a display |
| KR101909139B1 (ko) * | 2011-02-07 | 2018-12-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR102708594B1 (ko) | 2016-09-07 | 2024-09-23 | 삼성디스플레이 주식회사 | 표시 장치 |
| US9666482B1 (en) * | 2016-09-14 | 2017-05-30 | Infineon Technologies Ag | Self aligned silicon carbide contact formation using protective layer |
| CN110928085B (zh) | 2019-11-26 | 2021-01-15 | Tcl华星光电技术有限公司 | 阵列基板及显示面板 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5530573A (en) * | 1993-05-27 | 1996-06-25 | Sharp Kabushiki Kaisha | Multiple domain liquid crystal display having a cell thickness divided by helical pitch equal to 1/8 or less |
| JPH11259016A (ja) * | 1998-03-13 | 1999-09-24 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
| US6122025A (en) * | 1996-12-03 | 2000-09-19 | Lg Electronics Inc. | Liquid crystal display including a black matrix formed in trench in an interlayer insulating layer |
| US6188176B1 (en) * | 1997-07-15 | 2001-02-13 | Tdk Corporation | Organic electroluminescent device and preparation method with ITO electrode (111) orientation |
| US6433842B1 (en) * | 1999-03-26 | 2002-08-13 | Hitachi, Ltd. | Liquid crystal display device and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3009438B2 (ja) * | 1989-08-14 | 2000-02-14 | 株式会社日立製作所 | 液晶表示装置 |
| JPH0926598A (ja) | 1995-07-10 | 1997-01-28 | Hitachi Ltd | アクティブマトリクス型液晶ディスプレイ装置 |
| JPH10293321A (ja) * | 1997-04-17 | 1998-11-04 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
| JPH1138440A (ja) * | 1997-07-17 | 1999-02-12 | Sharp Corp | アクティブマトリクス型液晶表示装置およびその製造方法 |
| JP2000284326A (ja) | 1999-03-30 | 2000-10-13 | Hitachi Ltd | 液晶表示装置とその製造方法 |
| JP2000307118A (ja) * | 1999-04-21 | 2000-11-02 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
| KR100857719B1 (ko) * | 2001-03-26 | 2008-09-08 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| JP4432015B2 (ja) * | 2001-04-26 | 2010-03-17 | 日立金属株式会社 | 薄膜配線形成用スパッタリングターゲット |
-
2004
- 2004-07-21 JP JP2004212977A patent/JP2005057260A/ja active Pending
- 2004-07-21 US US10/895,404 patent/US7105896B2/en not_active Expired - Lifetime
- 2004-07-22 TW TW093121918A patent/TWI253618B/zh not_active IP Right Cessation
- 2004-07-22 KR KR1020040057114A patent/KR100702284B1/ko not_active Expired - Lifetime
- 2004-07-22 CN CNB2004100544435A patent/CN100370349C/zh not_active Expired - Lifetime
-
2006
- 2006-03-21 US US11/384,342 patent/US7341898B2/en not_active Expired - Lifetime
- 2006-11-09 KR KR1020060110237A patent/KR20070003719A/ko not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5530573A (en) * | 1993-05-27 | 1996-06-25 | Sharp Kabushiki Kaisha | Multiple domain liquid crystal display having a cell thickness divided by helical pitch equal to 1/8 or less |
| US6122025A (en) * | 1996-12-03 | 2000-09-19 | Lg Electronics Inc. | Liquid crystal display including a black matrix formed in trench in an interlayer insulating layer |
| US6188176B1 (en) * | 1997-07-15 | 2001-02-13 | Tdk Corporation | Organic electroluminescent device and preparation method with ITO electrode (111) orientation |
| JPH11259016A (ja) * | 1998-03-13 | 1999-09-24 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
| US6433842B1 (en) * | 1999-03-26 | 2002-08-13 | Hitachi, Ltd. | Liquid crystal display device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100702284B1 (ko) | 2007-03-30 |
| CN1601360A (zh) | 2005-03-30 |
| KR20070003719A (ko) | 2007-01-05 |
| TWI253618B (en) | 2006-04-21 |
| US7341898B2 (en) | 2008-03-11 |
| US20060175611A1 (en) | 2006-08-10 |
| US7105896B2 (en) | 2006-09-12 |
| KR20050011725A (ko) | 2005-01-29 |
| JP2005057260A (ja) | 2005-03-03 |
| US20050056839A1 (en) | 2005-03-17 |
| TW200515355A (en) | 2005-05-01 |
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