JP2005051498A - 表面弾性波素子、表面弾性波装置、表面弾性波デュプレクサ、及び表面弾性波素子の製造方法 - Google Patents
表面弾性波素子、表面弾性波装置、表面弾性波デュプレクサ、及び表面弾性波素子の製造方法 Download PDFInfo
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Abstract
【解決手段】 本発明に係る表面弾性波素子12においては、入出力電極18上に形成された嵩上げ電極20は、その高さ方向に延在する貫通孔31を有している。そして、嵩上げ電極20上に搭載されるバンプ26は、その一部が、嵩上げ電極20の貫通孔31に浸入し入出力電極18の酸化膜18aを貫通して入出力電極18まで到達している。それにより、圧電性単結晶基板28上に形成された入出力電極18とバンプ26とが導通している。このように本発明に係る表面弾性波素子12においては、単結晶アルミニウムで構成される入出力電極18の表面には強固な酸化膜18aが形成されているが、嵩上げ電極20の貫通孔31に浸入したバンプ26の一部がこの酸化膜18aを貫通しているため、より確度の高い入出力電極18とバンプ26との導通が実現されている。
【選択図】 図6
Description
Claims (14)
- 圧電性単結晶基板上にバッファ層を介して形成された、単結晶アルミニウムで構成され且つ表面に酸化膜を有する薄膜電極と、
前記薄膜電極上に形成された、高さ方向に延在する貫通孔を有する嵩上げ電極と、
前記嵩上げ電極上に搭載され、一部が前記貫通孔の内部に浸入し且つ前記酸化膜を貫通して前記薄膜電極まで到達して、前記薄膜電極と導通している外部接続端子とを備える、表面弾性波素子。 - 前記外部接続端子は金バンプ端子である、請求項1に記載の表面弾性波素子。
- 前記嵩上げ電極はアルミニウム又は金−アルミニウム合金で構成されている、請求項1又は2に記載の表面弾性波素子。
- 前記薄膜電極と前記嵩上げ電極との間には、これらの電極間の密着性を向上させる密着補強層が介在している、請求項1〜3のいずれか一項に記載の表面弾性波素子。
- 前記密着補強層はクロムで構成されている、請求項4に記載の表面弾性波素子。
- 前記薄膜電極と前記嵩上げ電極との間には、前記外部接続端子を構成する原子の前記薄膜電極への拡散を防止する拡散バリア層が介在している、請求項1〜5のいずれか一項に記載の表面弾性波素子。
- 前記拡散バリア層は窒化チタンで構成されている、請求項6に記載の表面弾性波素子。
- 前記バッファ層はチタン又は窒化チタンで構成されている請求項1〜7のいずれか一項に記載の表面弾性波素子。
- 前記バッファ層はチタン層及び窒化チタン層を含む少なくとも2層以上の積層構造を有する、請求項1〜8のいずれか一項に記載の表面弾性波素子。
- 前記バッファ層は、層成長面に近づくに従って、窒化チタンから次第にチタンに変化するように窒素の組成比が減少している、請求項1〜9のいずれか一項に記載の表面弾性波素子。
- 圧電性単結晶基板上にバッファ層を介して形成された、単結晶アルミニウムで構成され且つ表面に酸化膜を有する薄膜電極と、
前記薄膜電極上に形成された、高さ方向に延在する貫通孔を有する嵩上げ電極とを備える、表面弾性波素子。 - 圧電性単結晶基板上にバッファ層を介して形成された、単結晶アルミニウムで構成され且つ表面に酸化膜を有する薄膜電極と、前記薄膜電極上に形成された、高さ方向に延在する貫通孔を有する嵩上げ電極と、前記嵩上げ電極上に搭載され、一部が前記貫通孔の内部に浸入し且つ前記酸化膜を貫通して前記薄膜電極まで到達して、前記薄膜電極と導通している外部接続端子と、を備える表面弾性波素子と、
前記表面弾性波素子が搭載される面に電極端子が形成されており、この電極端子と前記表面弾性波素子の前記嵩上げ電極とが前記外部接続端子を介して接続されるように、前記表面弾性波素子が搭載される実装基板とを備える、表面弾性波装置。 - 圧電性単結晶基板上にバッファ層を介して形成された、単結晶アルミニウムで構成され且つ表面に酸化膜を有する薄膜電極と、前記薄膜電極上に形成された、高さ方向に延在する貫通孔を有する嵩上げ電極と、前記嵩上げ電極上に搭載され、一部が前記貫通孔の内部に浸入し且つ前記酸化膜を貫通して前記薄膜電極まで到達して、前記薄膜電極と導通している外部接続端子と、を有する表面弾性波素子を備える、表面弾性波デュプレクサ。
- 圧電性単結晶基板上に、バッファ層を積層するステップと、
前記圧電性単結晶基板上に、前記バッファ層を介して単結晶アルミニウムで構成される電極膜を積層するステップと、
前記電極膜をパターニングして薄膜電極を形成すると共に、その薄膜電極の表面に酸化膜を形成するステップと、
前記薄膜電極上に、高さ方向に延在する貫通孔を有する嵩上げ電極を形成するステップと、
前記嵩上げ電極上に外部接続端子を圧着し、その一部を前記貫通孔に浸入させるステップと、
前記外部接続端子を振動させて、前記貫通孔に浸入した前記外部接続端子に前記薄膜電極表面の前記酸化膜を貫通させ、前記外部接続端子を前記薄膜電極まで到達させるステップとを有する表面弾性波素子の製造方法。
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JP2003281301A JP3764450B2 (ja) | 2003-07-28 | 2003-07-28 | 表面弾性波素子、表面弾性波装置、表面弾性波デュプレクサ、及び表面弾性波素子の製造方法 |
US10/895,911 US7102461B2 (en) | 2003-07-28 | 2004-07-22 | Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element |
DE200460002437 DE602004002437T2 (de) | 2003-07-28 | 2004-07-28 | Akustisches Oberflächenwellenelement und Herstellungsverfahren |
CNA2004100711508A CN1578134A (zh) | 2003-07-28 | 2004-07-28 | 声表面波元件及其制法、声表面波设备和声表面波双工器 |
EP20040017884 EP1503499B1 (en) | 2003-07-28 | 2004-07-28 | Surface acoustic wave element and its manufacturing method |
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JP2005086118A (ja) * | 2003-09-11 | 2005-03-31 | Renesas Technology Corp | 半導体装置 |
JP4987823B2 (ja) * | 2008-08-29 | 2012-07-25 | 株式会社東芝 | 半導体装置 |
CN104392968B (zh) * | 2008-11-21 | 2018-05-18 | 先进封装技术私人有限公司 | 半导体基板 |
JP2010130031A (ja) * | 2008-11-25 | 2010-06-10 | Panasonic Corp | 弾性境界波素子と、これを用いた電子機器 |
DE102012202727B4 (de) * | 2012-02-22 | 2015-07-02 | Vectron International Gmbh | Verfahren zur Verbindung eines ersten elektronischen Bauelements mit einem zweiten Bauelement |
WO2014045828A1 (ja) * | 2012-09-24 | 2014-03-27 | 独立行政法人産業技術総合研究所 | 半導体装置の製造方法、及び半導体製造装置 |
JP6205937B2 (ja) * | 2013-07-22 | 2017-10-04 | セイコーエプソン株式会社 | 圧電膜製造方法、振動子製造方法、振動片、振動子、発振器、電子機器及び移動体 |
WO2015125460A1 (en) * | 2014-02-18 | 2015-08-27 | Skyworks Panasonic Filter Solutions Japan Co., Ltd. | Acoustic wave elements and ladder filters using same |
CN105472216B (zh) * | 2015-12-01 | 2020-01-10 | 宁波舜宇光电信息有限公司 | 具有缓冲结构的电气支架及摄像模组 |
CN106338347A (zh) * | 2016-11-02 | 2017-01-18 | 清华大学 | 一种高温声表面波传感器的叉指电极材料及其制备方法 |
JP6986376B2 (ja) * | 2017-06-27 | 2021-12-22 | NDK SAW devices株式会社 | 弾性表面波素子およびその製造方法 |
KR102472455B1 (ko) * | 2018-03-14 | 2022-11-30 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치 |
TWI721315B (zh) | 2018-09-05 | 2021-03-11 | 立積電子股份有限公司 | 體聲波結構、體聲波裝置及其製造方法 |
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- 2004-07-28 DE DE200460002437 patent/DE602004002437T2/de not_active Expired - Fee Related
- 2004-07-28 EP EP20040017884 patent/EP1503499B1/en not_active Expired - Fee Related
- 2004-07-28 CN CNA2004100711508A patent/CN1578134A/zh active Pending
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JPH09172341A (ja) * | 1995-12-19 | 1997-06-30 | Toshiba Corp | 弾性表面波デバイスおよびその製造方法 |
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Also Published As
Publication number | Publication date |
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EP1503499B1 (en) | 2006-09-20 |
EP1503499A1 (en) | 2005-02-02 |
US20050030125A1 (en) | 2005-02-10 |
CN1578134A (zh) | 2005-02-09 |
JP3764450B2 (ja) | 2006-04-05 |
DE602004002437T2 (de) | 2007-09-13 |
DE602004002437D1 (de) | 2006-11-02 |
US7102461B2 (en) | 2006-09-05 |
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