JP2005006489A5 - - Google Patents

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Publication number
JP2005006489A5
JP2005006489A5 JP2003419716A JP2003419716A JP2005006489A5 JP 2005006489 A5 JP2005006489 A5 JP 2005006489A5 JP 2003419716 A JP2003419716 A JP 2003419716A JP 2003419716 A JP2003419716 A JP 2003419716A JP 2005006489 A5 JP2005006489 A5 JP 2005006489A5
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JP
Japan
Prior art keywords
control signal
voltage
logic level
node
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003419716A
Other languages
English (en)
Japanese (ja)
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JP2005006489A (ja
JP4393182B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2003419716A external-priority patent/JP4393182B2/ja
Priority to JP2003419716A priority Critical patent/JP4393182B2/ja
Priority to TW093109720A priority patent/TWI240276B/zh
Priority to US10/822,826 priority patent/US20040232974A1/en
Priority to KR10-2004-0034658A priority patent/KR100538021B1/ko
Priority to DE102004024612.2A priority patent/DE102004024612B4/de
Priority to CNB2004100446502A priority patent/CN100414644C/zh
Publication of JP2005006489A publication Critical patent/JP2005006489A/ja
Priority to US11/253,733 priority patent/US7365591B2/en
Publication of JP2005006489A5 publication Critical patent/JP2005006489A5/ja
Publication of JP4393182B2 publication Critical patent/JP4393182B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003419716A 2003-05-19 2003-12-17 電圧発生回路 Expired - Fee Related JP4393182B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003419716A JP4393182B2 (ja) 2003-05-19 2003-12-17 電圧発生回路
TW093109720A TWI240276B (en) 2003-05-19 2004-04-08 Voltage generating circuit
US10/822,826 US20040232974A1 (en) 2003-05-19 2004-04-13 Voltage generating circuit
KR10-2004-0034658A KR100538021B1 (ko) 2003-05-19 2004-05-17 전압발생회로
DE102004024612.2A DE102004024612B4 (de) 2003-05-19 2004-05-18 Spannungserzeugungsschaltung
CNB2004100446502A CN100414644C (zh) 2003-05-19 2004-05-19 电压发生电路
US11/253,733 US7365591B2 (en) 2003-05-19 2005-10-20 Voltage generating circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003140079 2003-05-19
JP2003419716A JP4393182B2 (ja) 2003-05-19 2003-12-17 電圧発生回路

Publications (3)

Publication Number Publication Date
JP2005006489A JP2005006489A (ja) 2005-01-06
JP2005006489A5 true JP2005006489A5 (enExample) 2006-02-23
JP4393182B2 JP4393182B2 (ja) 2010-01-06

Family

ID=33455503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003419716A Expired - Fee Related JP4393182B2 (ja) 2003-05-19 2003-12-17 電圧発生回路

Country Status (6)

Country Link
US (2) US20040232974A1 (enExample)
JP (1) JP4393182B2 (enExample)
KR (1) KR100538021B1 (enExample)
CN (1) CN100414644C (enExample)
DE (1) DE102004024612B4 (enExample)
TW (1) TWI240276B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004038919A1 (ja) * 2002-10-24 2004-05-06 Matsushita Electric Industrial Co., Ltd. 電圧発生回路、電圧発生装置及びこれを用いた半導体装置、並びにその駆動方法
US7248096B2 (en) * 2004-11-22 2007-07-24 Stmicroelectronics S.R.L. Charge pump circuit with dynamic biasing of pass transistors
US7317347B2 (en) * 2004-11-22 2008-01-08 Stmicroelectronics S.R.L. Charge pump circuit with reuse of accumulated electrical charge
JP4957913B2 (ja) 2005-11-17 2012-06-20 日本電気株式会社 半導体集積回路
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
KR101230313B1 (ko) 2006-07-05 2013-02-06 재단법인서울대학교산학협력재단 레벨 시프터 및 그의 구동 방법
JP4929999B2 (ja) * 2006-11-17 2012-05-09 セイコーエプソン株式会社 昇圧回路、その制御方法および電圧発生回路。
US7446596B1 (en) * 2007-05-25 2008-11-04 Atmel Corporation Low voltage charge pump
JP4969322B2 (ja) * 2007-06-01 2012-07-04 三菱電機株式会社 電圧発生回路およびそれを備える画像表示装置
US7808301B2 (en) * 2007-07-26 2010-10-05 Macronix International Co., Ltd. Multiple-stage charge pump circuit with charge recycle circuit
JP5142861B2 (ja) * 2008-07-09 2013-02-13 パナソニック株式会社 内部電圧発生回路
JP2011150482A (ja) * 2010-01-20 2011-08-04 Sanyo Electric Co Ltd 電源回路
KR101736453B1 (ko) 2011-01-05 2017-05-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 워드라인 전압 발생 방법
KR101764125B1 (ko) * 2010-12-15 2017-08-02 삼성전자주식회사 음의 고전압 발생기 및 음의 고전압 발생기를 포함하는 비휘발성 메모리 장치
US8897073B2 (en) * 2012-09-14 2014-11-25 Freescale Semiconductor, Inc. NVM with charge pump and method therefor
WO2017187553A1 (ja) * 2016-04-27 2017-11-02 東芝三菱電機産業システム株式会社 無停電電源装置
US10672453B2 (en) * 2017-12-22 2020-06-02 Nanya Technology Corporation Voltage system providing pump voltage for memory device and method for operating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2820331B2 (ja) * 1991-06-21 1998-11-05 シャープ株式会社 チャージポンプ回路
KR950008453B1 (ko) * 1992-03-31 1995-07-31 삼성전자주식회사 내부전원전압 발생회로
JP2755047B2 (ja) * 1992-06-24 1998-05-20 日本電気株式会社 昇圧電位発生回路
DE19601369C1 (de) * 1996-01-16 1997-04-10 Siemens Ag Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM
EP0855788B1 (en) * 1997-01-23 2005-06-22 STMicroelectronics S.r.l. NMOS negative charge pump
JP3853513B2 (ja) * 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
JP3476363B2 (ja) * 1998-06-05 2003-12-10 日本電気株式会社 バンドギャップ型基準電圧発生回路
JP3554497B2 (ja) * 1998-12-08 2004-08-18 シャープ株式会社 チャージポンプ回路
US6208196B1 (en) * 1999-03-02 2001-03-27 Maxim Integrated Products, Inc. Current mode charge pumps
US6501325B1 (en) * 2001-01-18 2002-12-31 Cypress Semiconductor Corp. Low voltage supply higher efficiency cross-coupled high voltage charge pumps
US6661682B2 (en) * 2001-02-16 2003-12-09 Imec (Interuniversitair Microelectronica Centrum) High voltage generating charge pump circuit
TW564434B (en) * 2002-02-22 2003-12-01 Ememory Technology Inc Charge pump circuit without body effects

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