JP2004528728A - ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法 - Google Patents

ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法 Download PDF

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Publication number
JP2004528728A
JP2004528728A JP2003502878A JP2003502878A JP2004528728A JP 2004528728 A JP2004528728 A JP 2004528728A JP 2003502878 A JP2003502878 A JP 2003502878A JP 2003502878 A JP2003502878 A JP 2003502878A JP 2004528728 A JP2004528728 A JP 2004528728A
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JP
Japan
Prior art keywords
diode
drift layer
grid portion
resistance
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003502878A
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English (en)
Japanese (ja)
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JP2004528728A5 (enExample
Inventor
ファニー・ダールクヴィスト
ハインツ・レンデンマン
ヴィリー・ヘルマンソン
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Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2004528728A publication Critical patent/JP2004528728A/ja
Publication of JP2004528728A5 publication Critical patent/JP2004528728A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2003502878A 2001-05-25 2002-05-24 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法 Pending JP2004528728A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0101848A SE0101848D0 (sv) 2001-05-25 2001-05-25 A method concerning a junction barrier Schottky diode, such a diode and use thereof
PCT/SE2002/000994 WO2002099869A1 (en) 2001-05-25 2002-05-24 A method concerning a junction barrier schottky diode, such a diode and use thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009230498A Division JP5554042B2 (ja) 2001-05-25 2009-10-02 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法

Publications (2)

Publication Number Publication Date
JP2004528728A true JP2004528728A (ja) 2004-09-16
JP2004528728A5 JP2004528728A5 (enExample) 2009-04-23

Family

ID=20284243

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003502878A Pending JP2004528728A (ja) 2001-05-25 2002-05-24 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法
JP2009230498A Expired - Lifetime JP5554042B2 (ja) 2001-05-25 2009-10-02 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009230498A Expired - Lifetime JP5554042B2 (ja) 2001-05-25 2009-10-02 ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法

Country Status (4)

Country Link
EP (1) EP1390973A1 (enExample)
JP (2) JP2004528728A (enExample)
SE (1) SE0101848D0 (enExample)
WO (1) WO2002099869A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352006A (ja) * 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd 整流素子およびその製造方法
JP2007324218A (ja) * 2006-05-30 2007-12-13 Toshiba Corp 半導体整流素子
JP2009539247A (ja) * 2006-05-31 2009-11-12 クレー・スウェーデン・アクチボラゲット 組み込まれたｐｎ接合を有するショットキダイオード
JP2010050468A (ja) * 2001-05-25 2010-03-04 Cree Inc ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法
JP2011142355A (ja) * 2011-04-21 2011-07-21 Sumitomo Electric Ind Ltd 整流素子
US9331150B2 (en) 2014-02-17 2016-05-03 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2017045901A (ja) * 2015-08-27 2017-03-02 トヨタ自動車株式会社 還流ダイオードと車載用電源装置
US10229973B2 (en) 2016-04-28 2019-03-12 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, first electrode and second electrode

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10235198B4 (de) * 2001-08-02 2011-08-11 Fuji Electric Systems Co., Ltd. Leistungs-Halbleitergleichrichter mit ringförmigen Gräben
DE102005046707B3 (de) * 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
WO2007133123A1 (en) * 2006-05-12 2007-11-22 Cree Sweden Ab A semiconductor device
CN101431020B (zh) * 2007-11-09 2010-09-08 上海华虹Nec电子有限公司 T型多晶硅栅电极的制备方法
EP2154726A3 (en) * 2008-08-14 2010-05-26 Acreo AB A method for producing a JBS diode
DE102011003961B4 (de) 2011-02-11 2023-07-27 Robert Bosch Gmbh Trench-Schottkydiode
JP5881322B2 (ja) * 2011-04-06 2016-03-09 ローム株式会社 半導体装置
JP5999678B2 (ja) * 2011-12-28 2016-09-28 ローム株式会社 半導体装置および半導体装置の製造方法
CN109148605B (zh) * 2017-06-19 2022-02-18 比亚迪半导体股份有限公司 快恢复二极管及制备方法、电子设备
JP6827433B2 (ja) 2018-03-02 2021-02-10 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137368A (ja) * 1988-11-18 1990-05-25 Toshiba Corp 半導体整流装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
JP3468571B2 (ja) * 1994-03-17 2003-11-17 株式会社リコー 半導体装置
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
SE9700141D0 (sv) * 1997-01-20 1997-01-20 Abb Research Ltd A schottky diode of SiC and a method for production thereof
JP3467381B2 (ja) * 1997-05-22 2003-11-17 株式会社日立製作所 炭化けい素ダイオード
DE19756873A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
JP4088852B2 (ja) * 1998-09-21 2008-05-21 関西電力株式会社 ＳｉＣショットキーダイオード
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010050468A (ja) * 2001-05-25 2010-03-04 Cree Inc ジャンクション・バリア・ショットキ・ダイオードに関する方法と、そのダイオードおよびその使用方法
JP2006352006A (ja) * 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd 整流素子およびその製造方法
JP2007324218A (ja) * 2006-05-30 2007-12-13 Toshiba Corp 半導体整流素子
JP2009539247A (ja) * 2006-05-31 2009-11-12 クレー・スウェーデン・アクチボラゲット 組み込まれたｐｎ接合を有するショットキダイオード
JP2011142355A (ja) * 2011-04-21 2011-07-21 Sumitomo Electric Ind Ltd 整流素子
US9331150B2 (en) 2014-02-17 2016-05-03 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2017045901A (ja) * 2015-08-27 2017-03-02 トヨタ自動車株式会社 還流ダイオードと車載用電源装置
US10229973B2 (en) 2016-04-28 2019-03-12 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, first electrode and second electrode

Also Published As

Publication number Publication date
JP2010050468A (ja) 2010-03-04
JP5554042B2 (ja) 2014-07-23
EP1390973A1 (en) 2004-02-25
SE0101848D0 (sv) 2001-05-25
WO2002099869A1 (en) 2002-12-12

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