JP2004526306A - 光学装置における又は関係する改良 - Google Patents
光学装置における又は関係する改良 Download PDFInfo
- Publication number
- JP2004526306A JP2004526306A JP2002560246A JP2002560246A JP2004526306A JP 2004526306 A JP2004526306 A JP 2004526306A JP 2002560246 A JP2002560246 A JP 2002560246A JP 2002560246 A JP2002560246 A JP 2002560246A JP 2004526306 A JP2004526306 A JP 2004526306A
- Authority
- JP
- Japan
- Prior art keywords
- optically active
- optically
- passive
- region
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 47
- 239000010410 layer Substances 0.000 claims description 79
- 235000012431 wafers Nutrition 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 35
- 238000005253 cladding Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000012792 core layer Substances 0.000 claims description 22
- 238000003776 cleavage reaction Methods 0.000 claims description 19
- 230000007017 scission Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Prostheses (AREA)
- Glass Compositions (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0101642A GB2371406A (en) | 2001-01-23 | 2001-01-23 | An Optically Active Device |
| PCT/GB2002/000282 WO2002060022A2 (en) | 2001-01-23 | 2002-01-23 | Improvements in or relating to optical devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004526306A true JP2004526306A (ja) | 2004-08-26 |
| JP2004526306A5 JP2004526306A5 (enExample) | 2007-04-19 |
Family
ID=9907276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002560246A Pending JP2004526306A (ja) | 2001-01-23 | 2002-01-23 | 光学装置における又は関係する改良 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20020097942A1 (enExample) |
| EP (1) | EP1421654B1 (enExample) |
| JP (1) | JP2004526306A (enExample) |
| CN (1) | CN1265518C (enExample) |
| AT (1) | ATE298144T1 (enExample) |
| DE (1) | DE60204702T2 (enExample) |
| ES (1) | ES2244764T3 (enExample) |
| GB (1) | GB2371406A (enExample) |
| WO (1) | WO2002060022A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6674950B2 (en) * | 2001-04-27 | 2004-01-06 | Sarnoff Corporation | Optical waveguide crossing and method of making same |
| US20050008055A1 (en) * | 2003-05-30 | 2005-01-13 | Archcom Technology, Inc. | Facet passivation for edge emitting semiconductor lasers |
| US9002146B2 (en) * | 2011-02-18 | 2015-04-07 | National Institute Of Advanced Industrial Science And Technology | Optical gate switch |
| US9306672B2 (en) * | 2013-03-14 | 2016-04-05 | Encore Corporation | Method of fabricating and operating an optical modulator |
| EP2985645B1 (en) * | 2014-08-13 | 2019-10-16 | Caliopa NV | Method for producing an integrated optical circuit |
| CN107093602B (zh) * | 2017-04-18 | 2019-01-22 | 合肥汇芯半导体科技有限公司 | 一种可集成化的光控分子开关器件及其制备方法 |
| AU2020289609A1 (en) * | 2019-06-03 | 2022-01-06 | Simone Assali | Quantum heterostructures, related devices and methods for manufacturing the same |
| GB2595211B (en) | 2020-05-13 | 2023-02-01 | Rockley Photonics Ltd | Hybrid integration process and devices |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145792A (en) * | 1988-05-23 | 1992-09-08 | Optical Measurement Technology Development Co., Ltd. | Method of fabricating a semiconductor optical device |
| US5138626A (en) * | 1990-09-12 | 1992-08-11 | Hughes Aircraft Company | Ridge-waveguide buried-heterostructure laser and method of fabrication |
| FR2674684A1 (fr) * | 1991-03-28 | 1992-10-02 | Alcatel Nv | Procede de realisation d'un composant semiconducteur tel qu'un laser a ruban enterre. |
| US5307357A (en) * | 1992-11-05 | 1994-04-26 | International Business Machines Corporation | Protection means for ridge waveguide laser structures using thick organic films |
| JPH07176827A (ja) * | 1993-08-20 | 1995-07-14 | Mitsubishi Electric Corp | 変調器付半導体レーザ装置の製造方法 |
| US5418190A (en) * | 1993-12-30 | 1995-05-23 | At&T Corp. | Method of fabrication for electro-optical devices |
| GB9503981D0 (en) * | 1995-02-28 | 1995-04-19 | Ca Nat Research Council | Bandag tuning of semiconductor well structures |
| JP3725582B2 (ja) * | 1995-07-05 | 2005-12-14 | 三菱電機株式会社 | 半導体レーザ装置の製造方法，及び半導体レーザ装置 |
| US5629233A (en) * | 1996-04-04 | 1997-05-13 | Lucent Technologies Inc. | Method of making III/V semiconductor lasers |
| GB0002775D0 (en) * | 2000-02-07 | 2000-03-29 | Univ Glasgow | Improved integrated optical devices |
| GB0018576D0 (en) * | 2000-07-27 | 2000-09-13 | Univ Glasgow | Improved semiconductor laser |
-
2001
- 2001-01-23 GB GB0101642A patent/GB2371406A/en not_active Withdrawn
- 2001-02-20 US US09/788,988 patent/US20020097942A1/en not_active Abandoned
-
2002
- 2002-01-23 US US10/466,971 patent/US6944386B2/en not_active Expired - Lifetime
- 2002-01-23 ES ES02716148T patent/ES2244764T3/es not_active Expired - Lifetime
- 2002-01-23 AT AT02716148T patent/ATE298144T1/de not_active IP Right Cessation
- 2002-01-23 DE DE60204702T patent/DE60204702T2/de not_active Expired - Lifetime
- 2002-01-23 EP EP02716148A patent/EP1421654B1/en not_active Expired - Lifetime
- 2002-01-23 CN CNB02804018XA patent/CN1265518C/zh not_active Expired - Lifetime
- 2002-01-23 JP JP2002560246A patent/JP2004526306A/ja active Pending
- 2002-01-23 WO PCT/GB2002/000282 patent/WO2002060022A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US6944386B2 (en) | 2005-09-13 |
| CN1265518C (zh) | 2006-07-19 |
| US20040075098A1 (en) | 2004-04-22 |
| ES2244764T3 (es) | 2005-12-16 |
| GB0101642D0 (en) | 2001-03-07 |
| GB2371406A (en) | 2002-07-24 |
| WO2002060022A2 (en) | 2002-08-01 |
| CN1529926A (zh) | 2004-09-15 |
| DE60204702T2 (de) | 2006-05-11 |
| EP1421654B1 (en) | 2005-06-15 |
| EP1421654A2 (en) | 2004-05-26 |
| ATE298144T1 (de) | 2005-07-15 |
| WO2002060022A3 (en) | 2004-02-05 |
| DE60204702D1 (de) | 2005-07-21 |
| US20020097942A1 (en) | 2002-07-25 |
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