GB2371406A - An Optically Active Device - Google Patents

An Optically Active Device Download PDF

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Publication number
GB2371406A
GB2371406A GB0101642A GB0101642A GB2371406A GB 2371406 A GB2371406 A GB 2371406A GB 0101642 A GB0101642 A GB 0101642A GB 0101642 A GB0101642 A GB 0101642A GB 2371406 A GB2371406 A GB 2371406A
Authority
GB
United Kingdom
Prior art keywords
optically active
optically
active device
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0101642A
Other languages
English (en)
Other versions
GB0101642D0 (en
Inventor
Craig James Hamilton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Glasgow
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Priority to GB0101642A priority Critical patent/GB2371406A/en
Priority to US09/788,988 priority patent/US20020097942A1/en
Publication of GB0101642D0 publication Critical patent/GB0101642D0/en
Priority to PCT/GB2002/000282 priority patent/WO2002060022A2/en
Priority to DE60204702T priority patent/DE60204702T2/de
Priority to US10/466,971 priority patent/US6944386B2/en
Priority to ES02716148T priority patent/ES2244764T3/es
Priority to CNB02804018XA priority patent/CN1265518C/zh
Priority to AT02716148T priority patent/ATE298144T1/de
Priority to EP02716148A priority patent/EP1421654B1/en
Priority to JP2002560246A priority patent/JP2004526306A/ja
Publication of GB2371406A publication Critical patent/GB2371406A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Prostheses (AREA)
  • Glass Compositions (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Optical Filters (AREA)
GB0101642A 2001-01-23 2001-01-23 An Optically Active Device Withdrawn GB2371406A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB0101642A GB2371406A (en) 2001-01-23 2001-01-23 An Optically Active Device
US09/788,988 US20020097942A1 (en) 2001-01-23 2001-02-20 Optical devices
JP2002560246A JP2004526306A (ja) 2001-01-23 2002-01-23 光学装置における又は関係する改良
US10/466,971 US6944386B2 (en) 2001-01-23 2002-01-23 Optical devices
DE60204702T DE60204702T2 (de) 2001-01-23 2002-01-23 Verbesserungen für optische vorrichtungen
PCT/GB2002/000282 WO2002060022A2 (en) 2001-01-23 2002-01-23 Improvements in or relating to optical devices
ES02716148T ES2244764T3 (es) 2001-01-23 2002-01-23 Mejoras relativas a dispositivos opticos.
CNB02804018XA CN1265518C (zh) 2001-01-23 2002-01-23 光学器件中的或与之相关的改进
AT02716148T ATE298144T1 (de) 2001-01-23 2002-01-23 Verbesserungen für optische vorrichtungen
EP02716148A EP1421654B1 (en) 2001-01-23 2002-01-23 Improvements in or relating to optical devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0101642A GB2371406A (en) 2001-01-23 2001-01-23 An Optically Active Device

Publications (2)

Publication Number Publication Date
GB0101642D0 GB0101642D0 (en) 2001-03-07
GB2371406A true GB2371406A (en) 2002-07-24

Family

ID=9907276

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0101642A Withdrawn GB2371406A (en) 2001-01-23 2001-01-23 An Optically Active Device

Country Status (9)

Country Link
US (2) US20020097942A1 (enExample)
EP (1) EP1421654B1 (enExample)
JP (1) JP2004526306A (enExample)
CN (1) CN1265518C (enExample)
AT (1) ATE298144T1 (enExample)
DE (1) DE60204702T2 (enExample)
ES (1) ES2244764T3 (enExample)
GB (1) GB2371406A (enExample)
WO (1) WO2002060022A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674950B2 (en) * 2001-04-27 2004-01-06 Sarnoff Corporation Optical waveguide crossing and method of making same
US20050008055A1 (en) * 2003-05-30 2005-01-13 Archcom Technology, Inc. Facet passivation for edge emitting semiconductor lasers
US9002146B2 (en) * 2011-02-18 2015-04-07 National Institute Of Advanced Industrial Science And Technology Optical gate switch
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
EP2985645B1 (en) * 2014-08-13 2019-10-16 Caliopa NV Method for producing an integrated optical circuit
CN107093602B (zh) * 2017-04-18 2019-01-22 合肥汇芯半导体科技有限公司 一种可集成化的光控分子开关器件及其制备方法
AU2020289609A1 (en) * 2019-06-03 2022-01-06 Simone Assali Quantum heterostructures, related devices and methods for manufacturing the same
GB2595211B (en) 2020-05-13 2023-02-01 Rockley Photonics Ltd Hybrid integration process and devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475330A2 (en) * 1990-09-12 1992-03-18 Hughes Aircraft Company Ridge-waveguide buried heterostructure laser and method of fabrication
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
US6027989A (en) * 1995-02-28 2000-02-22 National Research Council Of Canada Bandgap tuning of semiconductor well structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
FR2674684A1 (fr) * 1991-03-28 1992-10-02 Alcatel Nv Procede de realisation d'un composant semiconducteur tel qu'un laser a ruban enterre.
US5307357A (en) * 1992-11-05 1994-04-26 International Business Machines Corporation Protection means for ridge waveguide laser structures using thick organic films
JPH07176827A (ja) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp 変調器付半導体レーザ装置の製造方法
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
JP3725582B2 (ja) * 1995-07-05 2005-12-14 三菱電機株式会社 半導体レーザ装置の製造方法，及び半導体レーザ装置
GB0002775D0 (en) * 2000-02-07 2000-03-29 Univ Glasgow Improved integrated optical devices
GB0018576D0 (en) * 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475330A2 (en) * 1990-09-12 1992-03-18 Hughes Aircraft Company Ridge-waveguide buried heterostructure laser and method of fabrication
US6027989A (en) * 1995-02-28 2000-02-22 National Research Council Of Canada Bandgap tuning of semiconductor well structure
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Electronic Letters, Vol 34, No 5, 5 Mar 98, Camacho et al, pp460-461 *
Electronic Letters, Vol 36, No 8,13th April 2000, Kudo et alpp 745-747 *
IEEE Journal of Selected Topics in Quantum Electronics, Vol4No 4,Jul/Aug 98,McDougall et al,p636-646 *
IEEE Photonics technology letters, vol 12,No 10,October 2000Teng et al, pp 1310-1312 *

Also Published As

Publication number Publication date
US6944386B2 (en) 2005-09-13
CN1265518C (zh) 2006-07-19
US20040075098A1 (en) 2004-04-22
ES2244764T3 (es) 2005-12-16
GB0101642D0 (en) 2001-03-07
WO2002060022A2 (en) 2002-08-01
CN1529926A (zh) 2004-09-15
DE60204702T2 (de) 2006-05-11
EP1421654B1 (en) 2005-06-15
EP1421654A2 (en) 2004-05-26
ATE298144T1 (de) 2005-07-15
WO2002060022A3 (en) 2004-02-05
DE60204702D1 (de) 2005-07-21
US20020097942A1 (en) 2002-07-25
JP2004526306A (ja) 2004-08-26

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)