CN1265518C - 光学器件中的或与之相关的改进 - Google Patents

光学器件中的或与之相关的改进 Download PDF

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Publication number
CN1265518C
CN1265518C CNB02804018XA CN02804018A CN1265518C CN 1265518 C CN1265518 C CN 1265518C CN B02804018X A CNB02804018X A CN B02804018XA CN 02804018 A CN02804018 A CN 02804018A CN 1265518 C CN1265518 C CN 1265518C
Authority
CN
China
Prior art keywords
wafer
optically
region
optically active
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB02804018XA
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English (en)
Chinese (zh)
Other versions
CN1529926A (zh
Inventor
克雷格·J·汉密尔顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intense Ltd By Share Ltd
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Publication of CN1529926A publication Critical patent/CN1529926A/zh
Application granted granted Critical
Publication of CN1265518C publication Critical patent/CN1265518C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Prostheses (AREA)
  • Glass Compositions (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Optical Filters (AREA)
CNB02804018XA 2001-01-23 2002-01-23 光学器件中的或与之相关的改进 Expired - Lifetime CN1265518C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101642A GB2371406A (en) 2001-01-23 2001-01-23 An Optically Active Device
GB0101642.7 2001-01-23

Publications (2)

Publication Number Publication Date
CN1529926A CN1529926A (zh) 2004-09-15
CN1265518C true CN1265518C (zh) 2006-07-19

Family

ID=9907276

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02804018XA Expired - Lifetime CN1265518C (zh) 2001-01-23 2002-01-23 光学器件中的或与之相关的改进

Country Status (9)

Country Link
US (2) US20020097942A1 (enExample)
EP (1) EP1421654B1 (enExample)
JP (1) JP2004526306A (enExample)
CN (1) CN1265518C (enExample)
AT (1) ATE298144T1 (enExample)
DE (1) DE60204702T2 (enExample)
ES (1) ES2244764T3 (enExample)
GB (1) GB2371406A (enExample)
WO (1) WO2002060022A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674950B2 (en) * 2001-04-27 2004-01-06 Sarnoff Corporation Optical waveguide crossing and method of making same
US20050008055A1 (en) * 2003-05-30 2005-01-13 Archcom Technology, Inc. Facet passivation for edge emitting semiconductor lasers
US9002146B2 (en) * 2011-02-18 2015-04-07 National Institute Of Advanced Industrial Science And Technology Optical gate switch
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
EP2985645B1 (en) * 2014-08-13 2019-10-16 Caliopa NV Method for producing an integrated optical circuit
CN107093602B (zh) * 2017-04-18 2019-01-22 合肥汇芯半导体科技有限公司 一种可集成化的光控分子开关器件及其制备方法
AU2020289609A1 (en) * 2019-06-03 2022-01-06 Simone Assali Quantum heterostructures, related devices and methods for manufacturing the same
GB2595211B (en) 2020-05-13 2023-02-01 Rockley Photonics Ltd Hybrid integration process and devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
FR2674684A1 (fr) * 1991-03-28 1992-10-02 Alcatel Nv Procede de realisation d'un composant semiconducteur tel qu'un laser a ruban enterre.
US5307357A (en) * 1992-11-05 1994-04-26 International Business Machines Corporation Protection means for ridge waveguide laser structures using thick organic films
JPH07176827A (ja) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp 変調器付半導体レーザ装置の製造方法
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
GB9503981D0 (en) * 1995-02-28 1995-04-19 Ca Nat Research Council Bandag tuning of semiconductor well structures
JP3725582B2 (ja) * 1995-07-05 2005-12-14 三菱電機株式会社 半導体レーザ装置の製造方法，及び半導体レーザ装置
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
GB0002775D0 (en) * 2000-02-07 2000-03-29 Univ Glasgow Improved integrated optical devices
GB0018576D0 (en) * 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser

Also Published As

Publication number Publication date
US6944386B2 (en) 2005-09-13
US20040075098A1 (en) 2004-04-22
ES2244764T3 (es) 2005-12-16
GB0101642D0 (en) 2001-03-07
GB2371406A (en) 2002-07-24
WO2002060022A2 (en) 2002-08-01
CN1529926A (zh) 2004-09-15
DE60204702T2 (de) 2006-05-11
EP1421654B1 (en) 2005-06-15
EP1421654A2 (en) 2004-05-26
ATE298144T1 (de) 2005-07-15
WO2002060022A3 (en) 2004-02-05
DE60204702D1 (de) 2005-07-21
US20020097942A1 (en) 2002-07-25
JP2004526306A (ja) 2004-08-26

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: INTENSE CO., LTD.

Free format text: FORMER OWNER: THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW

Effective date: 20120223

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120223

Address after: new jersey

Patentee after: Intense Limited by Share Ltd

Address before: British Glasgow

Patentee before: Univ. Court of Univ. of Glasgow

CX01 Expiry of patent term

Granted publication date: 20060719

CX01 Expiry of patent term