JP2004524677A - プラズマ処理用電極及びその製造方法並びにその使用 - Google Patents

プラズマ処理用電極及びその製造方法並びにその使用 Download PDF

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Publication number
JP2004524677A
JP2004524677A JP2002555446A JP2002555446A JP2004524677A JP 2004524677 A JP2004524677 A JP 2004524677A JP 2002555446 A JP2002555446 A JP 2002555446A JP 2002555446 A JP2002555446 A JP 2002555446A JP 2004524677 A JP2004524677 A JP 2004524677A
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electrode
plasma
reaction chamber
silicon
gas
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Japanese (ja)
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JP2004524677A5 (enExample
Inventor
ジェロム， エス． ヒューバセク，
アルバート， アール． エリンボー，
デイヴィッド ベンジン，
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2002555446A 2000-12-29 2001-12-07 プラズマ処理用電極及びその製造方法並びにその使用 Pending JP2004524677A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/749,916 US20020127853A1 (en) 2000-12-29 2000-12-29 Electrode for plasma processes and method for manufacture and use thereof
PCT/US2001/044701 WO2002054444A1 (en) 2000-12-29 2001-12-07 Electrode for plasma processes and method for manufacture and use thereof

Publications (2)

Publication Number Publication Date
JP2004524677A true JP2004524677A (ja) 2004-08-12
JP2004524677A5 JP2004524677A5 (enExample) 2005-12-22

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JP2002555446A Pending JP2004524677A (ja) 2000-12-29 2001-12-07 プラズマ処理用電極及びその製造方法並びにその使用

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US (2) US20020127853A1 (enExample)
EP (1) EP1346394A1 (enExample)
JP (1) JP2004524677A (enExample)
KR (1) KR20030066770A (enExample)
CN (1) CN100466152C (enExample)
TW (1) TW548741B (enExample)
WO (1) WO2002054444A1 (enExample)

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JP2008526021A (ja) * 2004-12-23 2008-07-17 ラム リサーチ コーポレーション 酸溶液によるシリコン電極アセンブリ表面の汚染除去
JP2008211183A (ja) * 2007-02-27 2008-09-11 Advanced Micro-Fabrication Equipment Inc Asia 容量的結合型プラズマチェンバー、シャワーヘッドの構造、製造方法並びに新たに再生リサイクルする方法
JP2009527107A (ja) * 2006-02-13 2009-07-23 ラム リサーチ コーポレーション 誘電体エッチングにおいて粒子汚染を低減させる封止エラストマー接合Ｓｉ電極およびその類似物
JP2010507228A (ja) * 2006-10-16 2010-03-04 ラム リサーチ コーポレーション 石英ガードリングセンタリング機構
JP2010507232A (ja) * 2006-10-16 2010-03-04 ラム リサーチ コーポレーション 石英ガードリング
JP2018049830A (ja) * 2013-01-25 2018-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 取り外し可能なガス分配プレートを有するシャワーヘッド
WO2021061463A1 (en) * 2019-09-27 2021-04-01 Applied Materials, Inc. Monolithic modular microwave source with integrated temperature control
WO2023238750A1 (ja) * 2022-06-06 2023-12-14 東京エレクトロン株式会社 プラズマ処理装置内構造体、電極板及びプラズマ処理装置
US12300497B2 (en) 2021-02-11 2025-05-13 Applied Materials, Inc. Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene

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JP2008526021A (ja) * 2004-12-23 2008-07-17 ラム リサーチ コーポレーション 酸溶液によるシリコン電極アセンブリ表面の汚染除去
JP2009527107A (ja) * 2006-02-13 2009-07-23 ラム リサーチ コーポレーション 誘電体エッチングにおいて粒子汚染を低減させる封止エラストマー接合Ｓｉ電極およびその類似物
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JP2010507228A (ja) * 2006-10-16 2010-03-04 ラム リサーチ コーポレーション 石英ガードリングセンタリング機構
JP2010507232A (ja) * 2006-10-16 2010-03-04 ラム リサーチ コーポレーション 石英ガードリング
JP2008211183A (ja) * 2007-02-27 2008-09-11 Advanced Micro-Fabrication Equipment Inc Asia 容量的結合型プラズマチェンバー、シャワーヘッドの構造、製造方法並びに新たに再生リサイクルする方法
JP2018049830A (ja) * 2013-01-25 2018-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 取り外し可能なガス分配プレートを有するシャワーヘッド
WO2021061463A1 (en) * 2019-09-27 2021-04-01 Applied Materials, Inc. Monolithic modular microwave source with integrated temperature control
US11564292B2 (en) 2019-09-27 2023-01-24 Applied Materials, Inc. Monolithic modular microwave source with integrated temperature control
US12144090B2 (en) 2019-09-27 2024-11-12 Applied Materials, Inc. Monolithic modular microwave source with integrated temperature control
US12300497B2 (en) 2021-02-11 2025-05-13 Applied Materials, Inc. Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene
WO2023238750A1 (ja) * 2022-06-06 2023-12-14 東京エレクトロン株式会社 プラズマ処理装置内構造体、電極板及びプラズマ処理装置

Also Published As

Publication number Publication date
TW548741B (en) 2003-08-21
US20020127853A1 (en) 2002-09-12
EP1346394A1 (en) 2003-09-24
CN100466152C (zh) 2009-03-04
US8845855B2 (en) 2014-09-30
CN1488161A (zh) 2004-04-07
KR20030066770A (ko) 2003-08-09
WO2002054444A1 (en) 2002-07-11
US20080026589A1 (en) 2008-01-31

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