TW449820B - Plasma-etching electrode plate - Google Patents

Plasma-etching electrode plate Download PDF

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Publication number
TW449820B
TW449820B TW086101568A TW86101568A TW449820B TW 449820 B TW449820 B TW 449820B TW 086101568 A TW086101568 A TW 086101568A TW 86101568 A TW86101568 A TW 86101568A TW 449820 B TW449820 B TW 449820B
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Taiwan
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electrode plate
glassy carbon
plate
electrode
temperature
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TW086101568A
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Chinese (zh)
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Toshiharu Uei
Takeshi Matsuoka
Tomio Hata
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Tokai Carbon Kk
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/3255Material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914Differential etching apparatus including particular materials of construction

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • ing And Chemical Polishing (AREA)
  • Ceramic Products (AREA)

Abstract

A plasma-etching electrode plate of glassy carbon which is characterized by a thickness greater than 4.5 mm and a thermal conductivity greater than 5 W/m.K at 300K. Owing to these characteristic properties, it has a uniform surface temperature distribution and permits etching on large semiconductor wafers (in excess of 8 inches in diameter) at a uniform etch rate. In addition, it is capable of stable etching for a long time and has a greatly improved durability. The glassy carbon should preferably be one which has a bulk specific gravity higher than 1.53 g/cc. The glassy carbon is obtained from one or more of thermosetting resin having a carbon yield higher than 20%.

Description

經濟部中央樣準局員工消費合作社印製 449820 A7 _____________ B7 _ 五、發明説明(1 ) — 本發明係有關於在半導體裝置的製造步驟中,用在電 漿钱刻加工形成於晶圓或晶圓表面上之矽氧化膜等薄膜時 之電漿蝕刻用電極板的改良。詳細而言爲使用碳作爲原料 所製造出之電漿蝕刻用電極板的改良。 更詳細爲有關於在特別是8吋以上之大型晶圓的處理 中,可得出均一蝕刻速率之玻璃板狀碳板所構成的電漿蝕 刻用電極板。亦即,本發明係有關於用來在半導體積體電 路的製造步驟中電漿蝕刻晶圓面的矽氧化膜之電極板,特 別是有關於適用在噴射型平行平板電極型電漿蝕刻裝置中 之玻璃狀碳板所構成之電漿蝕刻用電極板。Printed by the Consumer Cooperatives of the Central Sample Bureau of the Ministry of Economic Affairs 449820 A7 _____________ B7 _ V. Description of the Invention (1) — This invention relates to the use of plasma money engraving to form wafers or crystals in the manufacturing process of semiconductor devices Improvement of electrode plate for plasma etching when thin film such as silicon oxide film on round surface. Specifically, it is an improvement of a plasma etching electrode plate manufactured using carbon as a raw material. More specifically, it is related to an electrode plate for plasma etching composed of a glass plate-like carbon plate having a uniform etching rate in processing a large wafer of 8 inches or more. That is, the present invention relates to an electrode plate for plasma-etching a silicon oxide film on a wafer surface in a manufacturing step of a semiconductor integrated circuit, and more particularly, it relates to an electrode type plasma-etching device suitable for spraying a parallel plate electrode type. Electrode plate for plasma etching made of glassy carbon plate.

電漿蝕刻加工係,使用Lee Chen所揭示出之(USP 4534816) Single Wafer Plsama Etch Reactor”(Aug. 1.3, 1985)、Mark M.所揭示出之(USP 4780169)“Non Uniform Gas Inlet for Dry Etching Apparatus,5(Oct.25,1988) ' USP 423936、USP 5445709等所示般之裝置以進行之。 前述蝕刻裝置係:在艙室内的下部設置用來载置晶圓 基板之下部電極,在搶室内的上部之下部電極的對面設置 具備多數個氣體嗔出用貫通小孔之作爲上部電極的一對平 行平面電極。藉由一面將卣素氣體及氟氯碳化物氣體等反 應性氣體由上部電極侧導入,一面對電極間施加高頻電力 以使其放電,使用如此般所生成之氣體電漿蝕刻基板之未 經光阻圖形化的部分以在半導體晶圓上高精度地形成微細 的電路圖形。 前述電漿蝕刻加工所使用之上部電極係如Lee Chen 4 本紙張尺度適用中國國家梯準(CNS ) A4規格(210X297公釐) ('請先間讀背面之注意事項再填寫本頁) · y----i/ f 裝-----.—訂--------線--- 4 9 8 20 Α7 Β7 五'發明説明(2) 專利之圖2或Mark.Μ專利之圖3A所示般使用圓盤狀者。 由於設在圓盤上之孔的形狀、數目、位置會基於所使用的 裝置、蝕刻條件等之不同而形成不同,且雖然並非形狀相 同之電極板就可以共通的使用於所有的裝置中,但對於使 用在各裝置中之電桎板而言首先必須嚴格規定者爲其形 狀。 再者此電極板除了形狀外尚必須具備優異的導電性、 不致污染晶圓之高純度性及電極板不易產生本身被蝕刻之 化學安定性。因此,電極之材質係,韌期爲鋁、不鏽鋼、 碳(石墨)等,現在則使用可滿足上述材質要件之玻璃狀碳 材以構成電極板。 坡璃狀碳材係,一般爲碳化熱硬化性樹脂所得之巨觀 爲無孔組織之硬質碳物質,雖然具備高強度、低化學反應 性、氣體不透過性、自己潤滑性、堅牢性、雜質少等特性, 特別是與其他材料相較之下由於其微細粒子不易自組織脱 離’故在電漿蝕刻處理中不易造成晶圓的污損。 經濟部中央標準局員工消費合作社印製 (請先閱讀背而之注^^項再填寫本頁) 然而,隨著半導體集積度之增大,對於電漿蝕刻用之 電極材而言,除了形狀之外亦必須要求其物理、化學的性 能,因此必須謀求其付著在晶圓面的粒子及消耗程度之降 低化。因此,到目前爲止有關改良電漿蝕刻用玻璃狀電極 的材質已有許多嘗試提出。 例如以純度、氣孔率、氣孔徑、結晶構造等性狀作爲 改良對象,日本特開平3-33007號公報提示出使用氣孔率 0‘0002〜0.0020%、使用X射線繞射不致檢測出微晶、且雜 本紙張从適财_緖準(CNS) Α概格(⑽χ297&4) 經濟部中央標準局員工消費合作社印製 449320 A7 _____B7 * 五、發明説明(3) 質含量5PPm以下之玻璃狀碳材所構成的電漿裝置用碳元 件;EP421686B1揭示出使用最大氣孔徑1μιη以下、平均 氣孔徑0·7μπι以下、氣孔率1%以下之高純度玻璃狀碳所構 成之電漿蝕刻用電極板;日本特開平3-285〇86號公報揭示 出高純度的玻璃狀碳所構成之厚度2麵以上之板狀體、表 面及内部組織未存在實質的粒界、最大氣孔徑1μιη以下之 電漿蝕刻用電極板;日本特開平5_32〇955號公報揭示出使 用純度特性爲總灰分5ρρηι以下、金屬雜質2ppm以下、總 硫分3〇PPm以下、結晶特性爲結晶面間隔(〇〇2)〇 375nm以 下、微晶(002)之大小13nm以上、材質特性爲比重j 5〇以 上、曲折強度1100kg/cm2以上之破璃狀碳所構成之電漿蝕 刻用電極板;日本特開平6_128761號公報揭示出具有晶格 常數CG爲6.990A以下的結晶之玻璃狀碳所構成的電漿蝕 刻用電極极。 此外,日本特開平6 -12 8 7 6 2公報中以表面性狀爲對象 而揭示出«所消耗的部位之表面平滑度反_一以下之 玻璃狀碳所構成的電漿蝕刻用電極板;曰本特開平^ 347276號公報中揭示出用來特定玻璃狀碳的原料系的技 術之以紛樹脂及聚碳化二亞胺作爲原料所製造出破璃狀碳 所構成的電漿蚀刻用電極板。 ^,特開平4-362062號公報、特開平卜1〇〇365號公 報揭示出具相當厚度之玻璃狀碳的製造方法。 在電隸刻加工中重要的技術要素之一爲兹刻速率 (速度),爲了提高加工精度則必須確保蝕刻逹率的均一 6 (請先閱讀背面之注意事項再填寫本頁)Plasma etching processing system, using the single revealed by Lee Chen (USP 4534816) Single Wafer Plsama Etch Reactor "(Aug. 1.3, 1985), Mark M. (USP 4780169)" Non Uniform Gas Inlet for Dry Etching " Apparatus, 5 (Oct. 25, 1988) 'USP 423936, USP 5445709 and the like to perform this. The aforementioned etching device is provided with a lower electrode for placing a wafer substrate lower portion in a lower part of the cabin, and a pair of upper electrodes having a plurality of through holes for gas evacuation is provided on the opposite side of the upper and lower electrodes in the grab chamber as upper electrodes. Parallel planar electrodes. Reactive gases such as halogen gas and chlorochlorocarbon gas are introduced from the upper electrode side, and high-frequency power is applied between the electrodes to discharge them. The generated gas plasma is used to etch the substrate. The photoresist patterned portion is used to form a fine circuit pattern on a semiconductor wafer with high accuracy. The upper electrode used in the aforementioned plasma etching process is Lee Chen 4 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ('Please read the precautions on the back before filling this page) · y ---- i / f installation -----.- order -------- line --- 4 9 8 20 Α7 Β7 5 'invention description (2) Patented figure 2 or Mark.M patent As shown in FIG. 3A, a disc-shaped one is used. The shape, number, and position of the holes on the disc will vary depending on the device used, etching conditions, etc., and although not the same shape electrode plate can be used in all devices in common, but For the electric board used in each device, its shape must be strictly defined first. Furthermore, in addition to the shape of the electrode plate, it must have excellent electrical conductivity, high purity without contaminating the wafer, and chemical stability of the electrode plate not easily being etched. Therefore, the electrode material is made of aluminum, stainless steel, carbon (graphite), etc. Now, glass-like carbon materials that meet the requirements of the above materials are used to form the electrode plate. Slope-like carbon materials are generally hard carbon materials with non-porous structure obtained from carbonized thermosetting resins. Although they have high strength, low chemical reactivity, gas impermeability, self-lubricity, fastness, and impurities Less characteristics, especially compared with other materials, because its fine particles are not easy to detach from the organization, so it is not easy to cause wafer fouling in the plasma etching process. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the back note ^^ before filling out this page) However, with the increase of semiconductor accumulation, for electrode materials for plasma etching, in addition to the shape In addition, physical and chemical properties are also required. Therefore, it is necessary to reduce the amount of particles and consumption on the wafer surface. Therefore, many attempts have been made so far to improve the material of the glass electrode for plasma etching. For example, to improve properties such as purity, porosity, pore size, and crystal structure, Japanese Patent Application Laid-Open No. 3-33007 suggests using a porosity of 0'0002 to 0.0020%, and preventing the use of X-ray diffraction to detect microcrystals, and Miscellaneous papers are printed from _Cai Zhuan (CNS) Α Outline (格 χ297 & 4) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 449320 A7 _____B7 * 5. Description of the invention (3) Glassy carbon materials with a mass content of 5PPm or less A carbon element for a plasma device constructed; EP421686B1 discloses an electrode plate for plasma etching using high-purity glassy carbon having a maximum pore size of 1 μm or less, an average pore size of 0.7 μm or less, and a porosity of 1% or less; Japan Japanese Patent Application Laid-Open No. 3-285〇86 discloses that plate-like bodies with a thickness of at least two faces, surfaces, and internal structures made of high-purity glassy carbon do not have substantial grain boundaries, and have a maximum pore size of 1 μm or less for plasma etching. Electrode plate; Japanese Patent Application Laid-Open No. 5_32〇955 discloses that the purity characteristics are 5 ρρηι or less, 2 ppm or less of metal impurities, 30 PPm or less of total sulfur, and the crystal characteristics are crystalline. Plasma etching electrode plate made of glassy carbon with interplanar space (〇〇2) or less than 375 nm, microcrystalline (002) size of 13 nm or more, material characteristics of specific gravity j 50 or more, and meandering strength 1100 kg / cm2 or more Japanese Unexamined Patent Publication No. 6-128761 discloses an electrode for plasma etching composed of glassy carbon having crystals having a lattice constant CG of 6.990A or less. In addition, Japanese Unexamined Patent Publication No. 6 -12 8 7 6 2 discloses surface electrode as an object, and discloses the electrode plate for plasma etching composed of «consumed surface smoothness of inversely less than one glassy carbon; Japanese Patent Application Laid-Open No. 347276 discloses an electrode plate for plasma etching composed of glass-breaking carbon produced by using a resin and polycarbodiimide as raw materials for a technique for specifying a raw material system of glassy carbon. ^, Japanese Unexamined Patent Publication No. 4-362062 and Japanese Unexamined Patent Publication No. 100365 disclose a method for producing glassy carbon having a considerable thickness. One of the important technical elements in electrical engraving is the engraving rate (speed). In order to improve the processing accuracy, the uniform etching rate must be ensured 6 (Please read the precautions on the back before filling this page)

經濟部中央標準局員工消費合作社印製 Μ49820 Α7 ----------Β7 五、發明説明(4 ) 性。餘刻速率之均一化明顯地受到反應部之溫度、特別是 電極板表面的溫度分布之支配,故當表面溫度產生變動就 無法得出均一且安定的蝕刻速率。 因此,對於薄板厚之電極板而言,爲了使得經由電槳 照射而產生發熱之電極板的溫度保持均一,則通常將金屬 製的冷卻板密著在電極板的裡面以形成積層狀態。此時, 若電極板爲薄板厚者則電極板本身易產生彎曲現象,當有 管曲現象產生時由於會導致與電極冷卻板間之接觸不良故 會妨礙發熱’因此必須採用使得板彎儘可能地變小之製 法0 然而厚板厚之電極板較薄板厚之電極板爲佳β其理由 爲厚板厚者能夠耐消耗而可長時間安定地使用之,又不會 產生爲了交換電極板而停止裝置的運轉之必要性。 最近,隨著半導體裝置之高集積化,電路圖形也變得 越來越細’又由於晶圓尺寸已形成8吋以上,又即將超越 12吋,故高精度地蝕刻加工大型晶圓上之重要技術課題爲 蝕刻速率之均一化。然而,到目前爲止尚未有人嘗試從構 成電極的玻璃狀碳之材質面來改善蝕刻速率之均一性。 支配蝕刻速率之主要原因爲反應系的溫度,特別是在 于板厚之電極板中,達成餘到速率均一化之重要條件爲均 等地保持電極板表面之溫度分布。前述之特.開平4-362062 號公報、特開平6-100365號公報揭示出厚板厚之玻璃狀 碳,但其等作爲電漿蝕刻電極板使用時並無法發揮充 特性。 7 本玉張尺度顧中®1 家轉(CNS ) Α4規格(21G X 297公釐) (請先聞讀背面之注Jt攀項再填寫本頁)Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 498498 Α7 ---------- B7 V. Description of Invention (4). The uniformity of the remaining rate is obviously governed by the temperature of the reaction part, especially the temperature distribution on the surface of the electrode plate. Therefore, when the surface temperature changes, a uniform and stable etching rate cannot be obtained. Therefore, for thin electrode plates, in order to maintain uniform temperature of the electrode plates that generate heat by irradiation with electric paddles, a metal cooling plate is usually adhered to the inside of the electrode plates to form a laminated state. At this time, if the electrode plate is thin, the electrode plate itself is prone to bending. When tube bending occurs, it will lead to poor contact with the electrode cooling plate, which will prevent heat generation. Therefore, it is necessary to make the plate bend as much as possible. The method of making the ground smaller 0 However, thicker electrode plates are better than thinner electrode plates. The reason is that thicker plates can withstand consumption and can be used stably for a long time without generating electrode plates. The need to stop the operation of the device. Recently, with the high integration of semiconductor devices, circuit patterns have become increasingly finer. And since the wafer size has been formed to be more than 8 inches, and it is about to exceed 12 inches, it is important to accurately etch and process large wafers. The technical problem is the uniformization of the etching rate. However, no attempt has been made so far to improve the uniformity of the etching rate from the material surface of glassy carbon constituting the electrode. The main reason for controlling the etching rate is the temperature of the reaction system. Especially in electrode plates with a thick thickness, an important condition for achieving uniformity of the remaining rate is to maintain the temperature distribution on the surface of the electrode plate uniformly. The aforementioned Japanese Unexamined Patent Publication No. 4-362062 and Japanese Unexamined Patent Publication No. 6-100365 disclose glass-like carbon having a thick plate thickness, but these materials do not exhibit sufficient charging characteristics when used as a plasma-etched electrode plate. 7 Yuzhang scale Guzhong® 1 home turn (CNS) Α4 size (21G X 297 mm) (Please read the note on the back Jt climbing item before filling out this page)

449820 A7 B7 經濟部中央標率局員工消費合作社印製 五、發明説明(5 ) 本發明者係,爲了解決習知之電漿蚀刻用破璃狀破電 極板中之問題點,基於上述之認知而對於玻璃狀碳電極板 之性狀與蚀刻速率間之關係進行多方面的檢討,結果發現 到當構成電極板之玻璃狀碳材的熱傳導率爲某特定値以 上’且電極板的厚度爲既定値以上時可均等化電極板表面 的溫度分布,藉由此即可在優異的蝕刻速率下進行加工。 本發明之目的爲提供一種電漿蝕刻用電極板,藉由均 等化電極表面之溫度分布以改善蝕刻速率的均一性,而就 算對於超過8吋之大型晶圓亦可長期安定地進行蝕刻加 工。 用來解決上述課題之本發明的電漿蝕刻用電極板之特 徵爲’由溫度300〖之熱傳導率爲5恥/111.;^、厚度4.5髓1以 上之玻璃狀碳板所構成。 由於本發明係藉由令厚度4 5咖以上之電漿蝕刻用電 極板的溫度均等且安定化以均等化電極板的電漿發生面之 溫度分布’藉由此以達到均一化半導體晶圓的蝕刻速度之 目的,因此電極板所具備之要件爲:其爲玻璃狀碳村所構 成之具有多數個貫穿孔之平坦形的圓盤狀電極,其研磨加 工後之比重爲l.53g/cc以上,且熱傳導率爲5W/m · κ以 上。 [圖面之簡單説明] 第1圖係顯示熱傳導率與經過2〇〇小時時的蝕刻速率 (E/R)的均一性之關係。 第2圖係顯示熱傳導率與經過200小時時的電極板表 本紙張尺度顏t _家轉(CNS ) (請先聞讀背面之注意事項再填寫本頁 •裝· _訂 線 經濟部中央操隼局員工消t合作社印製 449820 A7 ___ B7 五、發明説明(6) 面消耗量之關係。 第3圖係顯示總體密度與經過200小時時的電極板表 面消耗量之關係。 [較佳實施形態] 、 本發明之電漿蝕刻用電極板,較佳者係,其前提爲由 燒結碳化碳化率20%以上之熱硬化性樹脂所得之具有均一 組織的玻璃狀碳板構成,其純度特性:總灰分5ρριη以下、 金屬雜質2ppm以下、總碟分3 Oppm以下之高純度材質, 儘可能爲高表面平滑度之平面板,由於可防止雜質對晶圓 之擴散及粒子(微小異物)的落下之故。碳化率爲碳之殘留 率,其爲在非氧化性環境氣體中、在800〜1000 eC下燒結時 所殘留之碳的重量。449820 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (5) The inventor is to solve the problems in the conventional glass-breaking electrode plate for plasma etching, based on the above-mentioned knowledge. The relationship between the properties of the glassy carbon electrode plate and the etching rate was reviewed in various aspects. As a result, it was found that when the thermal conductivity of the glassy carbon material constituting the electrode plate was above a certain 値 and the thickness of the electrode plate was above a predetermined 値In this case, the temperature distribution on the surface of the electrode plate can be equalized, so that processing can be performed at an excellent etching rate. The object of the present invention is to provide an electrode plate for plasma etching, which can uniformize the etching rate by equalizing the temperature distribution on the electrode surface, and can perform etching processing stably for a long time even for a large wafer exceeding 8 inches. A feature of the electrode plate for plasma etching of the present invention for solving the above-mentioned problems is that it is composed of a glassy carbon plate having a thermal conductivity of 5 ° / 111 ° C at a temperature of 300 ° C and a thickness of 4.5 or more. Because the present invention is to uniformize and stabilize the temperature of the electrode plate for plasma etching with a thickness of 45 or more, to equalize the temperature distribution of the plasma generation surface of the electrode plate, thereby achieving uniformity of the semiconductor wafer. For the purpose of etching speed, therefore, the electrode plate has the following requirements: it is a flat disk-shaped electrode with a large number of through-holes composed of glassy carbon villages, and its specific gravity after grinding is 1.53g / cc or more And has a thermal conductivity of 5 W / m · κ or more. [Brief description of the drawing] Fig. 1 shows the relationship between the thermal conductivity and the uniformity of the etching rate (E / R) when 2000 hours have passed. Figure 2 shows the thermal conductivity and the paper size of the electrode sheet when 200 hours have elapsed. _ 家 转 (CNS) (Please read the precautions on the back before filling out this page Printed by the staff of the Municipal Bureau of Cooperatives 449820 A7 ___ B7 5. Description of the invention (6) Relationship between surface consumption. Figure 3 shows the relationship between the overall density and the surface consumption of the electrode plate after 200 hours. [Preferred implementation Morphology]. The electrode plate for plasma etching of the present invention is preferably based on the premise that it is composed of a glassy carbon plate with a uniform structure obtained by sintering a thermosetting resin with a carbonization rate of 20% or more, and its purity characteristics: High-purity materials with a total ash content of 5 ρριη or less, metal impurities of 2 ppm or less, and a total plate content of 3 Oppm or less. Flat surfaces with the highest possible surface smoothness. This prevents impurities from diffusing to the wafer and particles (small foreign matter) from falling. Therefore, the carbonization rate is the residual rate of carbon, which is the weight of carbon remaining when sintered at 800 to 1000 eC in a non-oxidizing ambient gas.

V 再者,本發明之重要的物性條件爲,上述電漿飪刻用 電極板中,玻璃狀碳板之温度300K的熱傳導率爲5W/m.K 以上、厚度4.5 mm以上、總體密度i.53g/cc ◊ 熱傳導率大且厚度大之玻璃狀碳係,由於熱傳導良好 且熱谷量大’故所構成之電極板的溫度變動少,因此可達 成表面溫度之均等化,故可高度地保持蝕刻速率之均一 性。再者,藉由提高總體比重可更進一步地增強前述效果, 因此亦可提高電漿下之耐消耗性。 然而,對於溫度300K下之熱傳導率未滿5W/m K、或 厚度未滿4·5麵之玻璃狀碳而百,由於伴隨著電漿蚀刻之 發熱等易產生電極板之溫度變動而造成溫度不易形成均 一,結果會導致蝕刻速率的均一性之衰退。 - · ----- --1 1 - .-1.丨- * - - n^i 'r___I. — ^—^1 —^^1 11 i - -II 一aJ11- i— —-ill - -- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度_ ( CNS ) Α4ϋΤ210Χ297^ )' ㈣2〇 經#外中央標準局員+工消費合作社印製 A7 B7 五、發明説明(7 ) 基於此,由於本發明之厚板厚的玻璃狀碳板構成之電 漿蝕刻用電極板之熱容量大,故不致如薄板厚之電極板中 基於彎曲等而造成降低與冷卻板間的密著性之問題。亦 即’本發明之要件爲藉由清楚地限制熱傳導率與厚度之範 圍以有效果地抑制表面溫度分布之變動,故可得出實用上 蚀刻速率極佳的均一性。又厚板厚之電極板係,用在處理 大型晶圓時具有優異的處理性,同時具有可延長電極壽命 等枝生效果。 具備上述性狀.之玻璃狀碳係,例如將喃或其衍生化 合物混合入分子量1 〇〇以上、膠化時間5〜6〇分之酚樹脂中 以形成粘度1〜100泊、樹脂分50重量%之樹脂組合物,在 成形、硬化該樹脂組合物後在非氧化性環境氣體中藉由燒 結碳化等方法以製造出。 通常,厚板厚之玻璃狀碳板係,具有外部與内部之碳 結晶的發達程度、緻密性等的構造差即内外構造差極大之 倾向,特別是伴隨著厚度變厚此倾向會變得更顯著,故會 造成熱處理過程中之裂開等產生機率的增加。然而,在前 述製造過程中,藉由嚴密地控制原料系的設計、樹脂組合 物的硬化昇溫速度、最終硬化溫度、燒結碳化時之均一加 熱、昇溫速度或加熱條件、及最終燒結溫度等的設定條件, 即可製造出滿足本發明的物性要件之玻璃狀碳板。 亦即,爲了滿足本發明之作爲特定的電漿蝕刻用電極 桩之玻璃狀碳的特性,適當之製造方法爲依據下述製造步 驟以進行處理者。 卜紙張錢適用中國國家標準(CNS ) A4& ( 2〗〇 X 297公釐 (請先閲讀背面之注意事項再填寫本頁)V Furthermore, the important physical property conditions of the present invention are: among the electrode plates for plasma cooking, the glass-like carbon plate has a thermal conductivity at a temperature of 300K of 5W / mK or more, a thickness of 4.5 mm or more, and an overall density of i.53g / cc 玻璃 A glassy carbon system with a large thermal conductivity and a large thickness. Since the thermal conductivity of the electrode plate is small due to its good thermal conductivity and large amount of thermal valleys, the surface temperature can be equalized, so the etching rate can be maintained at a high level. Uniformity. Furthermore, the aforementioned effects can be further enhanced by increasing the overall specific gravity, and therefore the consumption resistance under plasma can also be improved. However, for glassy carbon with a thermal conductivity of less than 5 W / m K or a thickness of less than 4 · 5 faces at a temperature of 300 K, the temperature is easily caused by the temperature fluctuation of the electrode plate due to the heat generated by plasma etching and the like. It is not easy to form uniformity, and as a result, the uniformity of the etching rate is deteriorated. -· ----- --1 1-.-1. 丨-*--n ^ i 'r___I. — ^ — ^ 1 — ^^ 1 11 i--II-aJ11- i— —-ill- -(Please read the precautions on the back before filling this page) This paper size _ (CNS) Α4ϋΤ210 × 297 ^) '〇2〇 by #outside Central Standards Bureau + Industrial and Consumer Cooperatives printed A7 B7 V. Description of the invention (7) Based on Therefore, since the electrode plate for plasma etching of the thick plate-thick glassy carbon plate of the present invention has a large heat capacity, it does not reduce the adhesion with the cooling plate due to bending or the like in a thin plate electrode plate. problem. That is, the requirement of the present invention is to effectively limit the variation of the surface temperature distribution by clearly limiting the range of the thermal conductivity and the thickness, so that the uniformity of the etching rate is practically excellent. The thick and thick electrode plate system has excellent handling properties when processing large wafers, and has the effects of prolonging electrode life. A glassy carbon system having the above-mentioned properties. For example, a phenol or a derivative thereof is mixed into a phenol resin having a molecular weight of 1,000 or more and a gelation time of 5 to 60 minutes to form a viscosity of 1 to 100 poises and a resin content of 50% by weight. The resin composition is manufactured by molding and hardening the resin composition in a non-oxidizing ambient gas by sintering and carbonization. In general, thick glass-like carbon plate systems tend to have a structural difference between the external and internal carbon crystals, such as the degree of development and compactness, that is, the difference between the internal and external structures. This tendency tends to increase with the increase in thickness. Significantly, it will increase the probability of cracks and other occurrences during heat treatment. However, during the aforementioned manufacturing process, the design of the raw material system, the setting of the heating temperature of the resin composition, the final hardening temperature, the uniform heating during sintering and carbonization, the setting of the heating rate or heating conditions, and the setting of the final sintering temperature are strictly controlled. Conditions, a glassy carbon plate that satisfies the physical properties of the present invention can be manufactured. That is, in order to satisfy the characteristics of the glassy carbon as the specific electrode etching electrode pile of the present invention, a suitable manufacturing method is one that is processed in accordance with the following manufacturing steps. Paper money is subject to Chinese National Standard (CNS) A4 & (2) 〇 X 297 mm (Please read the notes on the back before filling this page)

S11 - J. H ,II I*·^, - I.....I 訂---- - 卜線--------!----1 . 449820 經濟部中喪標準局買工消費合作社印製 Α7 Β7 五、發明説明(8 ) ① 原料樹脂的調整、成形步驟 使用酚、'"炙喃系之熱硬化性樹脂作爲原料之具體的製 造步驟如下所示般。首先,以經精製之酚及福美林作爲原 料經縮合反應而得出分子量丨00以上、勝化時間⑼分之 紛树知預縮合物’令其與p火喃或表喃之衍生物混合以形成 碳化收率65〜75%之2成分系樹脂組合物。此時,所使用之 <>夂喃衍生物可爲糠醇、糠醛、p夂喃羧酸甲酯等與吹喃樹脂 間具有相溶性者,且單獨或混合2種以上使用皆可。可配 合树鹿性狀而設定適宜的吹喃系成分對於酚樹脂之混合比 率’以將2成分系樹脂之性狀調整成粘度卜丨⑽泊、樹脂 分50%以上。 接著’藉由柱型成形、離心成形、射出成形等以將樹 月E1組合物成形成如最終所欲得出之玻璃狀碳板般之厚度 4.5mm以上之圓盤狀,並將其加熱硬化。 使用聚碳化二亞胺系之原料時可使用2,4_甲苯撑二異 氰酸酿、2,6·甲苯撑二異氰酸酯或其等之混合物,粗甲苯 撐二異氰酸酯、二甲苯撑二異氰酸酯、間苯基二異氰酸酯、 寒-1,5-二異象酸酯、4,4’-二苯撑二異氰酸酯、3,3、二甲 氧基4,4’-二苯基二異氰酸酯等脂肪族系、脂環族系、芳香 族系或此等之ί昆合物或此_等之共聚合體;此等原料可依據 日本特開昭51-61599、特開平2-292316號公報所揭示出 之方法製造出。將聚合觸媒加入此等有機二異氰酸酯中並 進行反應,接著加熱硬化經除去溶劑後之成形體。 ② 硬化步驟 ’ 本紙張^^^國國家標準(CNS ) Μ規格(21〇χ一297公淹) (請先Μ讀背面之注意事項再填寫本頁) .裝. 線 經濟部中央標準局員工消費合作社印製 449820 A7 ________________B7_ 五、發明説明(9) " ~ 在此步驟中,首先基於當硬化成形體在組織構造上具 有内外差時最終所得之玻璃狀碳板亦相同般會出現基於端 結晶的發達程度之内外差,因此必須嚴格地控制硬化條 件。一般熱硬化性樹脂的硬化爲發熱反應,由於厚度越厚 則表層部之硬化會先進行,故當欲快速地完成脱水或乾燥 而進行急速地加熱時會產生skin effect的現象而造成外層 之先固化、緻密化。結果,反而會造成很難除去伴隨著硬 化反應所產生之樹脂成#體内部的水分或反應生成氣體。 因此’爲了避免樹脂成形體之如此般的硬化不均一 性,加熱硬化時之昇溫速度必須調整成10 X/時以下、較 佳爲5 C /時以下、更佳爲2 °C /時以下。接著,將加熱溫度 上昇至硬化反應終了時之溫度,並在此溫度下保持足夠的 時間以使得樹脂成形體的内部亦能完全硬化。硬化温度 係,雖然隨著樹脂的組成、硬化劑的種類、配合等之不同 而不同,但通常是保持於14〇〜200。(:之溫度範圍内,而在 聚碳化二亞胺系樹脂之狀況下係保持於2〇〇〜25(rc^^。以 維持硬化溫度在完全硬化所需之保持時間以上爲較佳。 ③燒結碳化步驟 將硬化後之樹脂成形體置入保持在非氧化性環境氣體 下之加熱爐中,在80CTC以上的溫度區域進行燒結碳化處 理以轉變成破璃狀碳板。由於樹脂硬化物之熱傳導率低, 故當厚度厚時在燒結碳化的過程中會產生内部組織的分解 碳化反應較表曆部附近爲慢。因此,伴隨著表層部附近之 先碳化,内部會在受到緊張之狀態下進行碳化,結果易在 12 本紙張尺度適用中國國家標準(CNS ) Λ4規格(21〇>< 297公釐) (請先閲讀背面之注意寧项再填寫本頁)S11-J. H , II I * · ^,-I ..... I Order -----Buxian --------! ---- 1. 449820 Central Bureau of Standards, Ministry of Economic Affairs Printed by the buyer's consumer cooperative A7 B7 V. Description of the invention (8) ① The adjustment and molding steps of the raw resin use phenol and '" Hanan thermosetting resin as raw materials. The specific manufacturing steps are shown below. First, the refined phenol and formalin are used as raw materials to obtain a pre-condensate with a molecular weight of more than 00 and a time of victory by condensation reaction. A two-component resin composition having a carbonization yield of 65 to 75% was formed. In this case, the < > furan derivative used may be those having compatibility with furan resin, such as furfuryl alcohol, furfural, methyl p-furan carboxylate, etc., and may be used alone or in combination of two or more. The blending ratio of the blowing-system component to the phenol resin can be set to match the properties of the tree deer to adjust the properties of the two-component resin to a viscosity of 50% or more. Next, by column molding, centrifugal molding, injection molding, etc., the Shuyue E1 composition is formed into a disc shape with a thickness of 4.5 mm or more like a glassy carbon plate finally obtained, and then heat-hardened . When using polycarbodiimide-based raw materials, 2,4-toluene diisocyanate, 2,6 · toluene diisocyanate, or a mixture thereof, crude toluene diisocyanate, xylene diisocyanate, M-phenyl diisocyanate, cold-1,5-diisocyanate, 4,4'-diphenylene diisocyanate, 3,3, dimethoxy 4,4'-diphenyl diisocyanate and other aliphatic System, cycloaliphatic system, aromatic system, or these quinone compounds or copolymers thereof; these raw materials can be disclosed according to Japanese Unexamined Patent Publication No. 51-61599 and Japanese Unexamined Patent Publication No. 2-292316. Method. A polymerization catalyst is added to these organic diisocyanates and reacted, followed by heating to harden the formed body after removing the solvent. ② Hardening step 'This paper ^^^ National National Standards (CNS) Μ specifications (21〇χ-297 public flood) (Please read the precautions on the back before filling in this page). Loading. Staff of the Central Bureau of Standards, Ministry of Economic Affairs Printed by the Consumer Cooperative 449820 A7 ________________B7_ V. Description of the Invention (9) " ~ In this step, firstly based on the fact that the glassy carbon plate finally obtained when the hardened formed body has internal and external differences in structure and structure will also appear based on the end The degree of development of the crystal is poor inside and outside, so the hardening conditions must be strictly controlled. Generally, the hardening of a thermosetting resin is an exothermic reaction. As the thickness is thicker, the hardening of the surface layer will proceed first. Therefore, when the dehydration or drying is to be completed quickly and the skin is heated rapidly, the skin effect will occur and the outer layer will be the first Cure and densify. As a result, it becomes difficult to remove the water or the reaction generated gas inside the resin composition that is generated by the hardening reaction. Therefore, in order to avoid such uneven curing of the resin molded body, the temperature rise rate during heat curing must be adjusted to 10 X / hour or less, preferably 5 C / hour or less, and more preferably 2 ° C / hour or less. Next, the heating temperature is raised to the temperature at the end of the curing reaction, and the temperature is maintained at this temperature for a sufficient time so that the inside of the resin molded body can be completely cured. Although the curing temperature varies depending on the composition of the resin, the type of the curing agent, and the blending, it is usually maintained at 14 to 200. (: Within the temperature range, and in the case of the polycarbodiimide-based resin, it is preferably maintained at 2000 to 25 (rc ^^.) To maintain the curing temperature above the holding time required for complete curing. ③ The sintering and carbonizing step puts the hardened resin molded body in a heating furnace maintained under a non-oxidizing ambient gas, and performs sintering and carbonizing treatment at a temperature range of 80CTC or more to transform into a glass-like carbon plate. Due to the heat conduction of the resin hardened material The rate is low, so when the thickness is thick, the decomposition and carbonization reaction of the internal structure during the sintering and carbonization process is slower than the vicinity of the surface calendar part. Therefore, with the first carbonization near the surface layer part, the interior will be under tension. Carbonization, the result is easy to apply the Chinese National Standard (CNS) Λ4 specification (21〇 > < 297mm) at 12 paper sizes (please read the note on the back before filling this page)

449820 A7 B7 五 10 經濟部中央橾準局員工消費合作社印製 發明説明\ ! 表層部與内部間產生熱傳導率之差。 爲了缓和這種現象,故將燒結碳化之昇溫速度設定成 2 °C/時以下,藉由緩慢地令溫度上昇以在均等的速度下進 行内外層的碳化。玻璃狀碳雖然具有氣體不透過性,事實 上其組織内部具有多數個超微細的氣1,又其結晶爲與石 墨般之結晶性碳不同之形成不均一的非晶性,因此當進行 迅速地燒結碳化時,由於組織内部仍會存在有細孔故會造 成總體密度之變小。再者氣孔之存在會提高絕熱效果,因 此亦會降低熱容量。 又备連續地浪成氣泡、或有氣泡成長出時.,其結果會 與在材料内部形成有孔洞相同般,亦即會降低強度而易在 碳化步騍中產生裂開,因此很難得出厚板厚之製品。 再者當存在有多數氣泡時,基於使用狀況之不同在消 耗電極時氣孔會露出而在電極表面形成緣部,故會產生選 擇性地消耗,亦即代表造成粒子形成原因之易剥落等。 在硬化終了後將樹脂成形體夾在石墨板間,藉由此以 在加壓狀態下置入石墨坩堝中並放入加熱爐中,一面調整 爐赛之壓力條件一面在800〜25〇〇 °C之範圍内調整燒結碳 化溫度,藉由此以製造出熱傳導率不同之玻璃狀碳板。 此外,在燒結碳化之昇溫過程中,用來降低内外構造 差之有效方法爲’在碳化分解激烈的溫度區域、氣體產生 激烈的溫度區域、完成碳化而產生結構變化之溫度區域等 各階段中分別進行溫度保持。具體而言,在3〇〇〜4〇(Ke、 400〜500 eC及500〜600 °C之各溫度階段分別保持5小時以449820 A7 B7 5 10 Printed by the Consumer Cooperatives of the Central Bureau of Quasi-Equipment of the Ministry of Economic Affairs of the People's Republic of China \! Difference in thermal conductivity between the surface layer and the interior. In order to alleviate this phenomenon, the heating rate of sintering carbonization is set to 2 ° C / hour or less, and the inner and outer layers are carbonized at a uniform rate by slowly increasing the temperature. Although glassy carbon has gas impermeability, in fact, there are many ultrafine gases 1 in its structure, and its crystal is non-uniformly amorphous, which is different from graphite-like crystalline carbon. When sintering and carbonizing, there will still be pores inside the structure, which will reduce the overall density. Furthermore, the presence of stomata increases the thermal insulation effect, and therefore reduces the heat capacity. When it is ready to continuously form bubbles or bubbles grow out, the result will be the same as the formation of holes in the material, that is, the strength will be reduced, and cracks will easily occur in the carbonization step, so it is difficult to obtain a thick Plate thickness products. Furthermore, when there are many bubbles, the pores are exposed when the electrode is consumed and the edges are formed on the electrode surface due to the difference in the use conditions. Therefore, selective consumption occurs, which means that the particles are likely to peel off due to the formation of particles. After the hardening is completed, the resin molded body is sandwiched between graphite plates, thereby being placed in a graphite crucible under pressure and placed in a heating furnace, while adjusting the pressure conditions of the furnace match to 800 ~ 2500 ° The sintering carbonization temperature is adjusted within the range of C to thereby produce glassy carbon plates with different thermal conductivity. In addition, in the temperature rise process of sintering carbonization, the effective method to reduce the difference between the internal and external structure is' in the temperature region where the carbonization is intensely decomposed, the temperature where the gas is intensely generated, and the temperature region where the carbonization is completed and the structure is changed. Perform temperature maintenance. Specifically, it is maintained for 5 hours at each temperature stage of 300-400 (Ke, 400-500 eC, and 500-600 ° C).

請 ! 先ί 閲 | 讀 S ί 之I 注 意 事丨. 項 -· 填I Ϊ裝 I I 訂- 線 13 本紙張足度適用中國國家標準(CNS ) Α4规格(2ί〇Χ297公釐) 449820please ! Read first | Read S ί I Note 丨. Item-· Fill in I Outfit I I Order-Line 13 This paper is fully compliant with China National Standard (CNS) Α4 Specification (2ί〇 × 297 mm) 449820

經濟部中央標準局員工消費合作杜印製 五、發明説明(11 上。 其理由爲就算在昇溫速度2 °C以下連續地進行昇溫 時由於伴隨著氣泡之存在内壓會急劇地上昇,有可能造 成材料組織全體之破壞。因此藉由採用前述般之可抑制氣 泡成長的万法,即可得出總體密度大且熱傳導率大之玻璃 狀碳材。 又氣泡減少之附加效果爲,可有效果地抑制電極使用 時之组織崩壞、過度的消耗,結果,可均一化電極的消耗 而提高蚀刻速率。 再者其他得到厚板厚製品之方法爲混入碳質物、易碳 化<有機物,或添加可化合並除专反應所生成之水分、氣 體之金屬元素或金屬化令物。然而如此般之使用第3成分 的物質時,由於當此等物質或此等物質經變化所形成之粉 末在電極消耗中會落至晶圓時,會產生所謂粒子的問題, 因此此等添加物質之粒徑必須爲2μιη以下。 ④ 高純度化處理步驟 在燒結碳化後,视必要藉由一面將氣般之由素氣體導 入爐内一面在1400 °C以上之高溫進行處理以高純度化玻 璃狀碳板。 ⑤ 貫通小孔的形成步驟 又,設置於電極板之氣體流通用貫通小孔係,可在樹 脂成形階段②估計碳化時之尺寸收縮率而穿設之,或藉由 放電加工燒結後之樹脂板以穿設之。 以下,具體地説明本發明之實施例及比較例,但本發 本紙張尺度適用中國國家標準(CNS) μ规格(21〇χ297公费) (請先閲讀背面之注意事項再填寫本頁) -裝_ 線 449820 A7 B7 五、發明説明(12 ) 明之實施形態並非以此等實施例爲限。所使用之原料可爲 碳化率20%以上之酚系樹脂、喃樹脂、聚醯胺樹脂、聚 碳化二亞胺樹脂,或適量地混合此等樹脂所得出之熱硬化 性樹脂。 (►> 實施例1〜13、比較例1〜6 (1)電漿蝕刻用電極板的製造 對於以紛、哺系樹脂作爲原料之例進行説明,令經 由減壓蒸館精製出之盼及福美林在氨的存在下進行縮合反 應,以調製出分子量、膠化時間分別爲表j所示般之酚樹 脂預聚合物。添加相對於100重量部的紛樹脂爲3〇重量部 之糠醇並混合之而得出粘度40泊、樹脂分55%之樹脂組合 物。令此樹脂組合物流入聚乙烯桶中,置入眞空乾燥器中 而在1 OTorr的減壓下進行脱泡處理後,移至電爐中而在4 °C/時之昇溫速度下加熱至200 °C,在此溫度保持5小時並 施加硬化處理以成形出板狀成形體。 (請先閱讀背面之注意事項再填寫本頁) 裝.Printed by the Central Bureau of Standards of the Ministry of Economic Affairs on Consumer Consumption by Du. V. Invention Description (11 above) The reason is that even if the temperature is continuously raised below 2 ° C, the internal pressure may rise sharply due to the presence of air bubbles. Causes the destruction of the entire material structure. Therefore, by adopting the aforementioned method that can suppress the growth of bubbles, a glassy carbon material with a high overall density and a large thermal conductivity can be obtained. The additional effect of reducing bubbles is that it can be effective In order to suppress the structure collapse and excessive consumption of the electrode during use, as a result, the consumption of the electrode can be uniformized and the etching rate can be increased. In addition, other methods for obtaining a thick plate and a thick product are mixing carbonaceous materials, easy carbonization < organic materials, or Add the metal elements or metallizing substances that can combine and remove the water and gas generated by the special reaction. However, when the third component is used as such, when these substances or the powders formed by these substances are changed in When the electrode is consumed and falls on the wafer, the problem of so-called particles occurs, so the particle size of these additives must be 2 μm or less. ④ High purity After the sintering and carbonization, if necessary, the glassy carbon plate is processed at a high temperature of 1400 ° C or higher by introducing gaseous gas from the element into the furnace, as necessary. ⑤ Formation of through-holes In addition, the gas flow provided in the electrode plate is generally penetrated through the small hole system, and it can be worn at the resin molding stage ② to estimate the dimensional shrinkage rate during carbonization, or it can be worn by discharge processing of the resin plate after sintering. The specific examples and comparative examples of the present invention will be specifically explained, but the paper size of this issue applies to the Chinese National Standard (CNS) μ specification (21〇χ297 public fee) (please read the precautions on the back before filling this page) 449820 A7 B7 5. The description of the invention (12) is not limited to these examples. The raw materials used can be phenolic resins, urethane resins, polyamide resins, and polycarbodicarbonates with a carbonization rate of 20% or more. Amine resin, or a thermosetting resin obtained by mixing these resins in an appropriate amount. (► > Examples 1 to 13, Comparative Examples 1 to 6 (1) Manufacturing of electrode plates for plasma etching Resin as An example of the material is described, and the hope and the formaldehyde refined through the reduced pressure steaming hall are subjected to a condensation reaction in the presence of ammonia to prepare a phenol resin prepolymer having a molecular weight and a gelation time as shown in Table j, respectively. Add 30 parts by weight of furfuryl alcohol to 100 parts by weight of the resin and mix to obtain a resin composition with a viscosity of 40 poise and a resin content of 55%. The resin composition is flowed into a polyethylene bucket and placed in an air dryer. After defoaming under a reduced pressure of 1 OTorr, it was transferred to an electric furnace and heated to 200 ° C at a temperature rise rate of 4 ° C / hour. The temperature was maintained for 5 hours, and a hardening treatment was applied to form the product. Plate shaped body. (Please read the precautions on the back before filling this page).

、1T 線 經濟部中央標準局員工消費合作社印製 15 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 4 4 卿1δ68 號專利說明書修正 .7 7 修正日期:89.08.11 互、發明說明(13Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economics of the 1T Line 15 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 4 4 Qing 1δ68 Patent Specification Amendment. 7 7 Date of amendment: 89.08.11 Invention Description (13

.5- 表 例No. 變動硌件 平均分子量 膠化時間 (分) 爐壓 (Torr) 燒結溫度 (。〇 1 132 14 800 2000 實 2 132 14 1500 2000 3 132 14 800 2200 4 132 14 2000 2500 5 132 14 1500 2500 施 6 125 18 800 2000 7 125 18 800 2000 8 125 18 800 2500 例 9 125 18 2000 2000 10 125 18 2000 2500 11 125 18 800 1700 12 125 18 2000 1500 13 125 18 2000 1500 1 125 18 2000 1500 2 132 14 2000 2500 比 3 132 14 800 1400 較 4 125 18 800 2000 例 5 125 18 500 1700 6 125 18 800 1500 接著,使用厚l〇mm之石墨板[東海碳素(株)製,G347] 夾住各板狀成形體的兩侧面並置入石墨坩堝中,將掛禍放 入保持在氬環境氣體下之電爐中以進行燒結碳化處理。 此時,藉由電爐中之氬氣以改變爐壓而在1〜4¾之昇 溫速度下緩慢地异溫,JL在燒結途中之350*C、在、55C 亡之各溫度階段分别保持5小時,而在最終之既定溫度(燒 結溫度下)進行處理。爐壓及燒結溫度係如表1所示般。 再者,一面令氯氣流通於壚内一面在相同於燒結碳化 16 本紙張尺度適用中國國家標準(CNS)A4規格(21CM 297公釐) (請先間讀背面之注意事項再填寫本頁) -------訂---------線I. 經濟部智慧財產局員工消費合作杜印製 449820 A7 ___ _B7 . 五、發明説明(14) ~~~~~ 時之最終處理溫度之溫度下實施高純度處理以製造出不同 直徑與厚度之具有平滑表面的玻璃狀碳板。 藉由放電加工以在所得之玻璃狀碳板的中央部穿設2 咖等間隔之直徑0.5腿之貫通孔’而製造出電漿蝕劍用電 極板。 表2係顯示出對比於製造時的變動條件所得出的各玻 璃狀碳板的物性。物性中熱傳導率係依據JIS Rl6n_199l 以測定出。其中,比熱容之標準試料爲高純度…氧化銘, 受光板爲經黑化處理的鋁,熱擴散率之標準試料爲高純度 銅。又,總體密度係依據JIS Z8807-1987而藉由阿基米得 法(在液體中秤量之方法)以測定出。 (請先閲讀背面之注意事項再填寫本頁〕 .裝 經濟部中央標準局員工消費合作社印製 表2 例 No. 導率 (W/m-ΚΊ 厚度 (mm) 總體密度 (r/cc) 直徑 imnn 實 施 例 1 2 3 4 5 6 7 8 9 10 11 12 13 5.2 5.9 5.8 7.2 6.6 5.8 5.7 6.5 6.3 7.2 5.2 5.0 5.0 4.5 5.0 5.0 8.0 6.0 6.0 6.2 5.0 6.0 6.0 5.0 5.0 5.0 1.52 1.55 1.52 1.59 1.55 1.54 1.54 1.56 1.55 1.59 1.53 1.54 1.54 — \ ****** I 300 300 380 380 380 300 390 300 200 300 300 300 380 1 2 5.2 7.2 4.0 4.0 ~~L50~~~~ 1.58 300 380 300 比 3 4.1 5.0 1.53 較 4 5.7 4.1 1.53 300 200 例 5 4.9 3.5 1.50 6 4.8 4.1 1.51 300 17 -訂 一 線 本紙張尺度適用中國國家標準(CNS )八4現格(21〇><297公釐) 449820 A7 B7 五、發明説明(15) (2)電極板的性能評價 將由具有表2的物性之玻璃狀破板構成之各電極板設 置於電漿蝕刻裝置中,在經過處理時間100及200小時後 測定砂晶圓的餘刻速率均一性,結果如表3所示般。 表3 例No. 處理初期時 E/R均一性 (%) 100小時處理時 200小時處理眭 E/R均一性 (%) 消耗度 (mm) E/R均一性 (%) 消耗度 (min') 1 3.1 3.2 0.65 3.4 , 1.00 實 2 2.6 2.5 0.39 2.8 0.80 3 3.0 3.2 0.79 3.3 1.10 4 2.4 2.5 0.17 2.7 0.37 施 5 2.5 2.7 0.36 2.8 0.75 6 3 · 1 3.3 0.36 3.5 0 77 7 2.8 2.9 0.38 3.3 0 80 例 8 2.7 2.8 0.35 3.1 0 74 9 10 2.6 2.9 0.31 3.2 0 64 2.2 2.2 0.30 2.5 0 55 11 3.0 3.2 0.43 3.3 0 88 12 13 3.3 3.4 3.5 3.5 0.46 0.55 3.6 3.8 0.85 〇 95 比 較 例 1 2 3 4 5 6 4.1 3.7 5.5 4.2 4.6 4.4 5.3 4.6 7.2 4.4 5.1 4.7 ~〇T79 0.97 0.51 0.61 0.64 0.75 6.5 5.2 8.6 4.7 5.2 4.9 1.60 1.98 1.30 1.25 1.30 1.58 钱刻處理係,在 (請先聞讀背面之注意事項再填寫本頁) -裝 -訂 ΙΪ 卜線 經濟部中央標準局員工消费合作社印製· 反應氣體 :CF4 载體氣體 :氬氣 反應室内之氣壓:1 Torr 電源頻率數 :13.5MHz 之條件下對於S吋矽晶圓的氧化膜進行史 18 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨〇·〆297公釐)------ 449820 A7 B7 五 經濟部中央標準局貝工消費合作社印製 、發明説明(16 ) 又,電極的消耗度爲處理後電極板的厚度減少量;餘 刻速率的均一性(E/R均一性)爲基於包含晶圓中心之9點 的蝕刻速率而依據下式以求出。 Γ , (J, /n/N I最大値-最小値,ΛΛ 五/ i?均-性(/。) = 土最大盈&小値χίοο . 基於表2、3的結果,經過200小時時蝕刻速率的均 一性與熱傳導率、電極板表面的消耗量與熱傳導率之關係 分別顯示於圖1 、2中。由在溫度300K之熱傳導率爲 5W/m.K以上、厚度4.5 mm以上之玻璃狀碳板構成之實施例 的電漿蝕刻用電極板係,與不合本發明的任一要件之比較 例相較之下,可看出就算經過長時間餘刻處理仍具有優異 的蝕刻速率均一性,叉電極板表面的消耗量亦較少。 再者,如圖3所示般,當實施例具有玻璃狀碳板的總 體密度爲1.53g/cm3之特性時,可發現到除了蝕刻速率之均 一性外尚具備優異的消耗速度的降低化之性能。 如上述般,依據本發明,藉由選擇在常温之熱傳導率 爲既定値以上、且厚度爲既定値以上之玻璃狀碳板,即可 提供出在均一蝕刻速率下處理大型半導體晶圓之高性能電 漿蝕刻用電極板。因此,除了在長期間的使用下亦可確保 安定地餘刻加工,由於同時可大幅地改善電極板的耐久壽 命,因此在產業上具有相當大的貢獻。 I .: .--辦衣-- (請先閱讀背面之注意事項再填寫本頁) 、-=- 線 19 各紙張*尺度適用中國國豕標準(〔阳)八4規格(2丨〇;?<;297公籍:).5- Table Example No. Gelation time (minutes) of the average molecular weight of the variable piece Furnace pressure (Torr) Sintering temperature (.0 1 132 14 800 2000 Solid 2 132 14 1500 2000 3 132 14 800 2200 4 132 14 2000 2500 5 132 14 1500 2500 Application 6 125 18 800 2000 7 125 18 800 2000 8 125 18 800 2500 Example 9 125 18 2000 2000 10 125 18 2000 2500 11 125 18 800 1700 12 125 18 2000 1500 13 125 18 2000 1500 1 125 18 2000 1500 2 132 14 2000 2500 to 3 132 14 800 1400 to 4 125 18 800 2000 Example 5 125 18 500 1700 6 125 18 800 1500 Next, a graphite sheet with a thickness of 10 mm [manufactured by Tokai Carbon Co., Ltd., G347] The two side surfaces of each plate-shaped formed body were sandwiched and placed in a graphite crucible, and the furnace was placed in an electric furnace maintained under an argon atmosphere to perform sintering and carbonization treatment. At this time, the furnace was changed by argon gas in the electric furnace. When the temperature is gradually increased at a temperature of 1 ~ 4¾, the JL is maintained at the temperature of 350 * C and 55C for 5 hours during the sintering process, and is processed at the final predetermined temperature (sintering temperature). The furnace pressure and sintering temperature are as follows This is shown in Table 1. In addition, while letting the chlorine gas flow through the inside, it is the same as the sintered carbonized paper. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21CM 297 mm) (Please read the precautions on the back first) (Fill in this page again) ------- Order --------- Line I. Consumer cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs Du printed 449820 A7 ___ _B7. V. Description of Invention (14) ~~ The high-purity treatment is carried out at a temperature of the final processing temperature at ~~~ to produce glassy carbon plates with smooth surfaces of different diameters and thicknesses. The obtained glassy carbon plate is passed through the center portion by electric discharge machining 2 Electrode plates for plasma erosion swords were manufactured with uniformly spaced through-holes with a diameter of 0.5 legs. Table 2 shows the physical properties of each glassy carbon plate compared to the variable conditions during manufacture. Thermal conductivity in physical properties Measured in accordance with JIS Rl6n_199l. Among them, the standard sample of specific heat capacity is high purity ... oxide, the light receiving plate is blackened aluminum, and the standard sample of thermal diffusivity is high purity copper. The total density was measured by Archimedes (method of weighing in liquid) in accordance with JIS Z8807-1987. (Please read the precautions on the back before filling in this page.) 2. Print out a table printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Example No. Conductivity (W / m-ΚΊ Thickness (mm) Overall Density (r / cc) Diameter imnn example 1 2 3 4 5 6 7 8 9 10 11 12 13 5.2 5.9 5.8 7.2 6.6 5.8 5.7 6.5 6.3 7.2 5.2 5.0 5.0 4.5 5.0 5.0 8.0 6.0 6.0 6.2 5.0 6.0 6.0 5.0 5.0 5.0 1.52 1.55 1.52 1.59 1.55 1.54 1.54 1.56 1.55 1.59 1.53 1.54 1.54 — \ ****** I 300 300 380 380 380 300 390 300 200 300 300 300 380 1 2 5.2 7.2 4.0 4.0 ~~ L50 ~~~~ 1.58 300 380 300 ratio 3 4.1 5.0 1.53 ratio 4 5.7 4.1 1.53 300 200 Example 5 4.9 3.5 1.50 6 4.8 4.1 1.51 300 17-Ordering the paper size Applicable to China National Standard (CNS) 8 Appearance (21〇 > < 297 mm) 449820 A7 B7 V. Description of the invention (15) (2) Performance evaluation of electrode plate Each electrode plate composed of a glass-like broken plate having physical properties in Table 2 was set in a plasma etching apparatus, and sand wafers were measured after a processing time of 100 and 200 hours. The uniformity of the remaining time is shown in Table 3. Table 3 Example No. Treatment Period E / R uniformity (%) 200 hours during 100 hours processing E / R uniformity (%) Consumption (mm) E / R uniformity (%) Consumption (min ') 1 3.1 3.2 0.65 3.4 , 1.00 Real 2 2.6 2.5 0.39 2.8 0.80 3 3.0 3.2 0.79 3.3 1.10 4 2.4 2.5 0.17 2.7 0.37 Application 5 2.5 2.7 0.36 2.8 0.75 6 3 · 1 3.3 0.36 3.5 0 77 7 2.8 2.9 0.38 3.3 0 80 Case 8 2.7 2.8 0.35 3.1 0 74 9 10 2.6 2.9 0.31 3.2 0 64 2.2 2.2 0.30 2.5 0 55 11 3.0 3.2 0.43 3.3 0 88 12 13 3.3 3.4 3.5 3.5 0.46 0.55 3.6 3.8 0.85 〇95 Comparative Example 1 2 3 4 5 6 4.1 3.7 5.5 4.2 4.6 4.4 5.3 4.6 7.2 4.4 5.1 4.7 ~ 〇T79 0.97 0.51 0.61 0.64 0.75 6.5 5.2 8.6 4.7 5.2 4.9 1.60 1.98 1.30 1.25 1.30 1.58 Money engraving processing system, please (please read the precautions on the back before filling this page)-binding-binding ΙΪ Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs · Reaction gas: CF4 Carrier gas: Argon Gas pressure in the reaction chamber: 1 Torr Power frequency: 13.5MHz For the oxide film of S-inch silicon wafers History 18 This paper size applies to Chinese National Standards (CNS ) A4 specification (2 丨 〇 · 〆297mm) ---- 449820 A7 B7 Printed by the Central Laboratories of the Ministry of Economic Affairs, Shelley Consumers' Cooperative, and description of the invention (16) In addition, the electrode consumption is the treated electrode The thickness of the plate is reduced; the uniformity of the remaining rate (E / R uniformity) is obtained based on the etching rate including 9 points of the wafer center according to the following formula. Γ, (J, / n / NI maximum 値 -min 値, ΛΛ 5 / i? Homogeneity (/.) = Soil maximum profit & small 値 χίοο. Based on the results of Tables 2 and 3, the etching will be performed after 200 hours The relationship between the uniformity of the velocity and the thermal conductivity, the consumption of the electrode plate surface, and the thermal conductivity are shown in Figures 1 and 2. The glassy carbon plate with a thermal conductivity of 300 W at a temperature of 5 W / mK or more and a thickness of 4.5 mm or more is shown in Figures 1 and 2. The electrode plate system for plasma etching according to the embodiment is compared with the comparative example which does not meet any of the requirements of the present invention. It can be seen that the fork electrode has excellent uniformity of the etching rate even after a long period of time. The consumption of the surface of the plate is also small. Moreover, as shown in FIG. 3, when the embodiment has the characteristic that the overall density of the glassy carbon plate is 1.53 g / cm3, it can be found that in addition to the uniformity of the etching rate It has excellent performance of reducing consumption rate. As mentioned above, according to the present invention, by selecting a glassy carbon plate having a thermal conductivity at room temperature or higher and a predetermined thickness or more, it can provide uniformity. Processing of large semiconductors at etch rates Electrode plate for high-performance plasma etching of wafers. Therefore, in addition to long-term use, it can ensure stable and engraved processing. At the same time, it can greatly improve the durable life of the electrode plate, so it has a considerable industry Contributions I .:. --- do clothing-(Please read the notes on the back before filling in this page),-=-Line 19 Each paper * size applies to China National Standard ([阳] 8 4 specifications (2 丨〇;? ≪; 297 citizenship :)

Claims (1)

第86101568號^專科範園_^^ lAfh/丨日丨夕 it ii λ 11 j η-A 1 \ B8 修正曰期^⑽ C8 D8 UJ-- /)S 4 4 9 b ^ u ] 1 叮劝 yu, 六、申請專利愈雷·一 ΤΐΓ U 1. 一種電漿蝕刻用電極板,由在300〜400°C保持五小時 以上、400〜500。(:保持五小時以上、500〜600eC保持五小時 以上之炭化燒成步驟而具有溫度3〇〇K之熱傳導率5〜7.2 W/m . Κ '且厚度爲4.5mm以上之玻璃狀碳板所構成。 2. 如申請專利範園第1項所述之電漿蝕刻用電極板, 其中,該玻璃狀碳板之總體密度爲1.53g/cc以上。 3. 如申請專利範園第1項所述之電漿蝕刻用電極板, 其中,該玻璃狀碳板係以1種或2種以上之碳化率2〇%以 上的熱硬化性樹脂所構成之樹脂組合物作爲原料而製造 出0 〈績先閲讀背¾之注意事項再填寫本K) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)No. 86101568 ^ Specialty Fan Garden _ ^^ lAfh / 丨 Sun 丨 Even ii λ 11 j η-A 1 \ B8 Corrected date ^ ⑽ C8 D8 UJ-- /) S 4 4 9 b ^ u] 1 yu, VI. Apply for patent Yulei · 一 ΤΐΓ U 1. An electrode plate for plasma etching, which is maintained at 300 ~ 400 ° C for more than five hours and 400 ~ 500. (: Carbonized firing step that is held for more than five hours and 500 to 600 eC for more than five hours and has a thermal conductivity of 5 to 7.2 W / m.K 'at a temperature of 300K and a thickness of 4.5 mm or more for a glassy carbon plate Composition. 2. The electrode plate for plasma etching according to item 1 of the patent application park, wherein the overall density of the glassy carbon plate is 1.53 g / cc or more. The electrode plate for plasma etching described above, wherein the glassy carbon plate is manufactured using a resin composition composed of one or two or more thermosetting resins having a carbonization rate of 20% or more as a raw material. Read the precautions below before filling in this K) The paper printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies to Chinese National Standard (CNS) A4 (210 X 297 mm)
TW086101568A 1996-02-15 1997-02-12 Plasma-etching electrode plate TW449820B (en)

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CN108984918A (en) * 2018-07-20 2018-12-11 辽宁石油化工大学 A kind of prediction technique of electroslag remelting comsumable melt rate

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US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6740403B2 (en) 2001-04-02 2004-05-25 Toyo Tanso Co., Ltd. Graphitic polyhederal crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
JP3876167B2 (en) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 Cleaning method and semiconductor device manufacturing method
US20040033361A1 (en) * 2002-08-06 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Component of glass-like carbon for CVD apparatus and process for production thereof

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JPH0814033B2 (en) * 1990-04-02 1996-02-14 東芝セラミックス株式会社 Electrode plate for plasma etching
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Publication number Priority date Publication date Assignee Title
CN108984918A (en) * 2018-07-20 2018-12-11 辽宁石油化工大学 A kind of prediction technique of electroslag remelting comsumable melt rate
CN108984918B (en) * 2018-07-20 2023-04-18 辽宁石油化工大学 Method for predicting melting rate of electroslag remelting consumable electrode

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EP0791948A2 (en) 1997-08-27
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EP0791948A3 (en) 1999-06-23
KR970063561A (en) 1997-09-12
US5993596A (en) 1999-11-30

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