JPH07114198B2 - Electrode plate for plasma etching - Google Patents
Electrode plate for plasma etchingInfo
- Publication number
- JPH07114198B2 JPH07114198B2 JP1258057A JP25805789A JPH07114198B2 JP H07114198 B2 JPH07114198 B2 JP H07114198B2 JP 1258057 A JP1258057 A JP 1258057A JP 25805789 A JP25805789 A JP 25805789A JP H07114198 B2 JPH07114198 B2 JP H07114198B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- electrode plate
- less
- electrode
- glassy carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001020 plasma etching Methods 0.000 title claims description 17
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005115 demineralization Methods 0.000 description 1
- 230000002328 demineralizing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Drying Of Semiconductors (AREA)
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体集積回路を製造する際にウエハのプラ
ズマエッチング加工に用いる電極板に関する。The present invention relates to an electrode plate used for plasma etching processing of a wafer when manufacturing a semiconductor integrated circuit.
高精度で微細なパターンを形成することができる平行板
形プラズマエッチング技法は、益々厳しさを増す半導体
集積回路の微細化と高密度化の要求に対応するための重
要技術となっている。The parallel plate type plasma etching technique capable of forming a fine pattern with high precision has become an important technique to meet the increasingly strict requirements for miniaturization and high density of semiconductor integrated circuits.
平行平板形のプラズマエッチイングは、上下に対向する
平滑板状の電極間に高周波電力を印加して発生させたガ
スプラズマによってウエハを所定のパターンにエッチン
グするもので、プラズマ中に存在するハロゲン系反応ガ
スのフリーラジカルとイオンが電極内の電界に引かれて
下部電極上に置かれたウエハに垂直に入射し、フォトレ
ジストのない部分を食刻していくプロセス機構からなっ
ている。The parallel plate type plasma etching is to etch a wafer into a predetermined pattern by gas plasma generated by applying high-frequency power between vertically facing smooth plate-shaped electrodes. It is composed of a process mechanism in which free radicals and ions of a reaction gas are attracted by an electric field in the electrode and are vertically incident on a wafer placed on the lower electrode to etch a portion having no photoresist.
このプラズマエッチングに用いられる電極には導電性を
はじめ高純度性、化学的安定性などの材質特性が必要と
されており、従来、金属、高密度黒鉛などからなる板状
体が適用されている。しかし、金属質の電極板は化学的
安定性の面で十分でないうえに、材質の純度を高めるこ
とに著しい困難性を伴う欠点がある。この点、高密度黒
鉛製の電極板は本質的に優れた導電性と化学的安定性を
備えており、また高純度化も容易である有利性はある
が、その組織が粒体集合状の構造を呈しているため、プ
ラズマ発生中に組織を構成する微細な粒体がパーティク
ルとなって脱落し、消耗を早めたりウエハの上面を汚損
する現象を惹起する問題点がある。Electrodes used for this plasma etching are required to have material characteristics such as conductivity, high purity, and chemical stability. Conventionally, plate-like bodies made of metal, high-density graphite, etc. have been applied. . However, the metal electrode plate is not sufficient in terms of chemical stability and has a drawback that it is extremely difficult to increase the purity of the material. In this respect, the electrode plate made of high-density graphite has inherently excellent conductivity and chemical stability, and it has the advantage that it can be easily purified. Since it has a structure, there is a problem in that minute particles forming a structure are turned into particles during the generation of plasma and fall off, which accelerates wear and stains the upper surface of the wafer.
このような高密度黒鉛電極の使用時に起きるパーティク
ル発生等の組織崩壊および過度の消耗現象を生じない炭
素質の電極板として、本出願人は先に高純度ガラス状カ
ーボン製の電極板を開発提供した（特開昭62−252942号
公報）。The applicant has previously developed and provided an electrode plate made of high-purity glassy carbon as a carbonaceous electrode plate that does not cause tissue collapse such as particles generation and excessive consumption phenomenon when such a high-density graphite electrode is used. (JP-A-62-252942).
ガラス状カーボンからなるプラズマエッチング用電極板
は、高密度黒鉛材のような粒体集合系とは全く異質な三
次元網目構造の均質緻密組織を呈しており、カーボン材
特有の導電性、化学的安定性を備えているうえ高純度化
も容易であるため、その実用性能は従来の金属および高
密度黒鉛の電極板を凌駕している。The electrode plate for plasma etching made of glassy carbon has a homogeneous and dense structure with a three-dimensional network structure, which is completely different from the granular aggregate system such as high-density graphite material. Since it has stability and can be easily purified, its practical performance exceeds that of conventional metal and high-density graphite electrode plates.
しかしながら、ガラス状カーボン材の組織にはクローズ
ド化された微細な気泡が内在しており、この気泡内部に
は製造時に原料樹脂中の低揮発成分が炭化して生成した
微小炭化物が遊離して存在する。そして、この遊離炭化
物はプラズマエッチング時の電極消耗に伴ってパーティ
クルとして脱落する現象を招く。また、組織中に内在す
る気泡の大小によって電極板表面の消耗度合が変動し、
エッチングの均一性を損ねる問題点もある。However, the structure of the glassy carbon material contains closed fine air bubbles, and inside this air bubbles, minute carbides generated by carbonization of low-volatile components in the raw material resin during production exist. To do. Then, this free carbide causes a phenomenon of falling off as particles due to electrode consumption during plasma etching. Also, the degree of wear of the electrode plate surface varies depending on the size of the bubbles in the tissue,
There is also a problem that the uniformity of etching is impaired.
近時、プラズマエッチング用電極板の性能は一層高度と
なっており、パーティクル数（１エッチング期間中に
６″ウエハ面に落下する0.3μｍ以上の粒体数）が30個
以下、エッチング変動率±３％以内といった性能要求を
満す必要がある。このため、従来組織のガラス状カーボ
ン材で構成した電極板では要求性能を十分に満足させる
ことはできなくなってきている。In recent years, the performance of plasma etching electrode plates has become even higher, and the number of particles (the number of particles of 0.3 μm or more falling on the 6 ″ wafer surface during one etching period) is 30 or less, the etching fluctuation rate ± Therefore, it is necessary to satisfy the performance requirement of 3% or less, so that it is becoming impossible to sufficiently satisfy the required performance with the electrode plate composed of the glassy carbon material having the conventional structure.
本発明は、このような実情を考慮し、ガラス状カーボン
の組織とくに気孔性状とプラズマエッチング性能との関
係について鋭意研究を重ねた結果開発に至ったもので、
上記の要求性能を満たす組織性状のガラス状カーボンか
らなるプラズマエッチング用電極板を提供することを目
的としている。In view of such circumstances, the present invention has been developed as a result of intensive research on the relationship between the glassy carbon structure, in particular, the porosity and the plasma etching performance.
It is an object of the present invention to provide an electrode plate for plasma etching, which is composed of glassy carbon having a texture that satisfies the above required performance.
上記の目的を達成するための本発明によるプラズマエッ
チング用電極は、最大気孔径１μｍ以下、平均気孔径0.
7μｍ以下で気孔率が１％以下の均質超緻密組織を備え
る高純度ガラス状カーボン平板に多数の貫通小孔を有す
ることを構成上の特徴とする。The electrode for plasma etching according to the present invention for achieving the above object has a maximum pore diameter of 1 μm or less and an average pore diameter of 0.
A structural feature is that a high-purity glassy carbon flat plate having a homogeneous ultra-dense structure with a porosity of 7% or less and a porosity of 1% or less has a large number of through-holes.
本発明で特定した気孔特性は通常のガラス状カーボンに
対し低位の値を示す均質超緻密組織を有する点で特長付
けられるが、このプラズマエッチング用電極板は次のよ
うにして製造することができる。The porosity characteristics specified in the present invention are characterized in that they have a homogeneous ultra-dense structure showing a low value with respect to ordinary glassy carbon, but this electrode plate for plasma etching can be manufactured as follows. .
出発原料としてフラン系樹脂またはフェノール系樹脂を
用い、液状態で均一肉厚の平板に成形硬化し、ついで樹
脂板を不活性雰囲気下に約1000℃の温度で焼成炭化し、
更に2000℃までの温度で熱処理する。このプロセス段階
で、樹脂の成形硬化を縮合水等が外部に抜け易い加熱条
件および昇温速度でおこなうとか、硬化触媒量を適正な
範囲に設定する等の手段を講じて気孔の発生、成長を阻
止する。得られたガラス状カーボン平板には多数の貫通
小孔を形成する等の所定の加工処理をおこなったのち脱
灰炉に移し、塩素、フレオン等の精製ガスを吹き込んで
高純度処理する。Using a furan-based resin or a phenol-based resin as a starting material, mold and cure into a flat plate of uniform thickness in a liquid state, and then fire and carbonize the resin plate in an inert atmosphere at a temperature of about 1000 ° C,
Further, heat treatment is performed at a temperature of up to 2000 ° C. In this process step, the formation and growth of pores are carried out by taking measures such as performing molding and hardening of the resin under heating conditions and a heating rate at which condensed water and the like can easily escape to the outside, and setting the amount of hardening catalyst in an appropriate range. Block. The obtained glassy carbon flat plate is subjected to predetermined processing such as forming a large number of small through holes, and then transferred to a deashing furnace, and purified gas such as chlorine and freon is blown therein to perform high-purity processing.
本発明のプラズマエッチング用電極板はガラス状カーボ
ン材質によって構成されているから、本質的に優れた導
電性と化学的安定性を備えている。Since the electrode plate for plasma etching of the present invention is made of a glassy carbon material, it has essentially excellent conductivity and chemical stability.
そして、気孔性状として選択された平均気孔径0.7μｍ
以下および気孔率１％以下の特性は１エッチング期間に
おけるパーティクル数を30個以下に抑えるために有効に
機能し、最大気孔径１μｍ以下および気孔率１％以下の
特性は、電極面の消耗を均等化してエッチングレートの
均一性を±３％以内に保持するために寄与する。And the average pore diameter selected as the pore property is 0.7 μm
The characteristics below and the porosity of 1% or less effectively function to suppress the number of particles in one etching period to 30 or less, and the characteristics of the maximum pore diameter of 1 μm or less and the porosity of 1% or less evenly wear the electrode surface. And contributes to maintain the uniformity of the etching rate within ± 3%.
これらの作用が相俟って、長期間に亘りウエハを汚損す
ることのない安定したプラズマエッチング加工の遂行が
可能となる。By combining these actions, it is possible to carry out stable plasma etching processing without polluting the wafer for a long period of time.
以下、本発明の実施例を比較例と対比して説明する。 Hereinafter, examples of the present invention will be described in comparison with comparative examples.
実施例１〜４、比較例１〜３ 各種特性を備える厚さ3mmのガラス状カーボン平板を作
製し、各平板面に放電加工によって3mmの等間隔で直径
0.8mmの貫通小孔を穿設したのち塩素ガスを用いて脱灰
高純度化処理をおこなった。高純度化処理後における各
ガラス状カーボン板の不純物量は、全て3ppm以下であっ
た。Examples 1 to 4 and Comparative Examples 1 to 3 A glassy carbon flat plate having a thickness of 3 mm having various characteristics was prepared, and the flat plate surface was subjected to electrical discharge machining to have a diameter of 3 mm at equal intervals.
After making 0.8 mm through-holes, chlorine gas was used for demineralization and high purification. The amount of impurities in each glassy carbon plate after the purification treatment was 3 ppm or less.
上記の高純度ガラス状カーボン板を電極としてプラズマ
エッチング装置にセットし、反応ガス：トリフロロメタ
ン（CHF3）、反応チャンバー内のガス圧:0.05Torr、電
源周波数:400KHzの条件でシリコンウエハ酸化膜のエッ
チング加工をおこなった。Set the above high-purity glassy carbon plate as an electrode in the plasma etching equipment, the reaction gas: trifluoromethane (CHF 3 ), the gas pressure in the reaction chamber: 0.05 Torr, the power supply frequency: 400 KHz, and the silicon wafer oxide film. Was etched.
各電極板の使用性能を測定し、気孔特性と対比させて表
１に示した。The use performance of each electrode plate was measured and shown in Table 1 in comparison with the pore characteristics.
なお、表１の電極性能のうち、パーティクル数は１エッ
チング期間中に６″ウエハ面に落下した0.3μｍ以上の
カーボン粒体と数、均一性はエッチングレート7000Å/m
in.に対する変動率（％）、表面粗さは放電消耗部分の
面粗さ、としてそれぞれ表示した。In addition, among the electrode performances in Table 1, the number of particles is the number of carbon particles of 0.3 μm or more dropped on the 6 ″ wafer surface during one etching period, and the uniformity is an etching rate of 7,000 Å / m.
The fluctuation rate (%) with respect to in. and the surface roughness are shown as the surface roughness of the discharge wear portion.
表１の結果から、実施例１〜４は本発明の特性要件を外
れる比較例１〜３と比べて電極性能が向上しており、パ
ーティクル数は30個以下、均一性は±３％以内のレベル
をクリアしている。 From the results of Table 1, Examples 1 to 4 have improved electrode performance as compared with Comparative Examples 1 to 3 which deviate from the characteristic requirements of the present invention, the number of particles is 30 or less, and the uniformity is within ± 3%. You have cleared the level.
以上のとおり、本発明によるプラズマエッチング用電極
板は指定された気孔性状を有するガラス状カーボン組織
によって構成されており、その特性がエッチング過程に
おけるパーティクル数の著減と均一な表面消耗化を実現
する。As described above, the electrode plate for plasma etching according to the present invention is composed of a glassy carbon structure having a specified porosity, and its characteristics realize a significant reduction in the number of particles in the etching process and uniform surface consumption. .
したがって、近時の厳しい要求性能を満足し、常にトラ
ブルのない安定なエッチング加工をおこなうことができ
る。Therefore, it is possible to satisfy the recent severe performance requirements and always carry out stable etching processing without trouble.
Claims (1)
ｍ以下で気孔率が１％以下の均質超緻密組織を備える高
純度ガラス状カーボン平板に多数の貫通小孔を有するプ
ラズマエッチング用電極板。1. A maximum pore diameter of 1 μm or less, an average pore diameter of 0.7 μ
An electrode plate for plasma etching having a large number of small through holes in a high-purity glassy carbon flat plate having a homogeneous ultra-dense structure having a porosity of 1% or less at m or less.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1258057A JPH07114198B2 (en) | 1989-10-02 | 1989-10-02 | Electrode plate for plasma etching |
| EP90310656A EP0421686B1 (en) | 1989-10-02 | 1990-09-28 | Electrode plate for plasma etching |
| DE69011794T DE69011794T2 (en) | 1989-10-02 | 1990-09-28 | Electrode disc for plasma etching device. |
| KR1019900015828A KR940010507B1 (en) | 1989-10-02 | 1990-10-05 | Electrode plate for plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1258057A JPH07114198B2 (en) | 1989-10-02 | 1989-10-02 | Electrode plate for plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03119723A JPH03119723A (en) | 1991-05-22 |
| JPH07114198B2 true JPH07114198B2 (en) | 1995-12-06 |
Family
ID=17314938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1258057A Expired - Lifetime JPH07114198B2 (en) | 1989-10-02 | 1989-10-02 | Electrode plate for plasma etching |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0421686B1 (en) |
| JP (1) | JPH07114198B2 (en) |
| KR (1) | KR940010507B1 (en) |
| DE (1) | DE69011794T2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0573915A1 (en) * | 1992-06-12 | 1993-12-15 | Nisshinbo Industries, Inc. | Electrode plate and jig for use in plasma etching |
| JP3249257B2 (en) * | 1993-08-11 | 2002-01-21 | ユニチカ株式会社 | Amorphous carbon molded body and method for producing the same |
| JP3437026B2 (en) * | 1996-02-15 | 2003-08-18 | 東海カーボン株式会社 | Electrode plate for plasma etching and method of manufacturing the same |
| TW449820B (en) * | 1996-02-15 | 2001-08-11 | Tokai Carbon Kk | Plasma-etching electrode plate |
| JP3454333B2 (en) * | 1996-04-22 | 2003-10-06 | 日清紡績株式会社 | Plasma etching electrode |
| JPH09289196A (en) * | 1996-04-22 | 1997-11-04 | Nisshinbo Ind Inc | Plasma etching electrode |
| JP2003007682A (en) * | 2001-06-25 | 2003-01-10 | Matsushita Electric Ind Co Ltd | Electrode member for plasma treatment apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4367114A (en) * | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
| JPS62252942A (en) * | 1986-04-17 | 1987-11-04 | Tokai Carbon Co Ltd | Electrode plate for plasma etching |
| JPS6336047U (en) * | 1986-08-26 | 1988-03-08 |
-
1989
- 1989-10-02 JP JP1258057A patent/JPH07114198B2/en not_active Expired - Lifetime
-
1990
- 1990-09-28 DE DE69011794T patent/DE69011794T2/en not_active Expired - Fee Related
- 1990-09-28 EP EP90310656A patent/EP0421686B1/en not_active Expired - Lifetime
- 1990-10-05 KR KR1019900015828A patent/KR940010507B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03119723A (en) | 1991-05-22 |
| DE69011794T2 (en) | 1994-12-15 |
| KR910008805A (en) | 1991-05-31 |
| KR940010507B1 (en) | 1994-10-24 |
| EP0421686A2 (en) | 1991-04-10 |
| DE69011794D1 (en) | 1994-09-29 |
| EP0421686B1 (en) | 1994-08-24 |
| EP0421686A3 (en) | 1991-09-18 |
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