KR100977315B1 - 플라즈마 챔버용 캐소드 전극 및 그 제조방법 - Google Patents
플라즈마 챔버용 캐소드 전극 및 그 제조방법 Download PDFInfo
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- KR100977315B1 KR100977315B1 KR1020080033274A KR20080033274A KR100977315B1 KR 100977315 B1 KR100977315 B1 KR 100977315B1 KR 1020080033274 A KR1020080033274 A KR 1020080033274A KR 20080033274 A KR20080033274 A KR 20080033274A KR 100977315 B1 KR100977315 B1 KR 100977315B1
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- electrode
- adhesive
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- plasma chamber
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title abstract description 31
- 239000000853 adhesive Substances 0.000 claims abstract description 65
- 230000001070 adhesive effect Effects 0.000 claims abstract description 65
- 239000012495 reaction gas Substances 0.000 claims abstract description 10
- 230000005281 excited state Effects 0.000 claims abstract description 5
- 239000002210 silicon-based material Substances 0.000 claims abstract description 4
- 239000007770 graphite material Substances 0.000 claims abstract description 3
- 229920001971 elastomer Polymers 0.000 claims description 15
- 239000000806 elastomer Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000005137 deposition process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (5)
- 챔버 내부로 공급된 반응가스를 인가되는 고주파 전압을 통해 여기된 상태의 플라즈마 상태로 변환시킬 수 있도록 하는 플라즈마 챔버용 캐소드 전극에 있어서,상기 캐소드 전극은 일정 두께를 갖는 원판 상으로 형성된 실리콘 재질의 전극판;상기 전극판의 외경에 대응하는 직경을 갖는 환형으로 이루어지되 상기 플라즈마 챔버의 일측에 고정되는 그라파이트 재질의 전극링;상기 전극링의 하부면 상에 일정 깊이를 갖는 환형의 홈 형상으로 형성된 접착제 그루브;상기 접착제 그루브의 하부면 상에 상기 접착제 그루브의 깊이보다 깊은 환형의 홈으로 형성된 스트랩 그루브;상기 스트랩 그루브 내측에 안착설치되어 상기 전극판과 전극링의 전기적인 접촉이 되게 하는 금속 재질의 탄성 스트랩; 및상기 접착제 그루브에 도포되어 상기 전극링의 하부면 상에 상기 전극판을 접착시키는 접착제를 포함하여 이루어지는 것을 특징으로 하는 플라즈마 챔버용 캐소드 전극.
- 제 1 항에 있어서, 상기 전극판은 상하방향으로 다수의 가스통과공들이 관통형성되어 외부로부터 공급되는 반응가스가 상기 가스통과공을 통해 상기 캐소드 전극과 애노드 전극 사이로 공급되도록 한 것을 특징으로 하는 플라즈마 챔버용 캐소드 전극.
- 제 1 항 또는 제 2 항에 있어서, 상기 탄성 스트랩은 일정 폭을 갖는 스테인레스 박판이 코일 상으로 꼬인 구조로 이루어지는 한편 그 표면에는 주석 도금이 이루어진 것을 특징으로 하는 플라즈마 챔버용 캐소드 전극.
- 제 3 항에 있어서, 상기 접착제는 15 ~ 50℃의 온도조건하에서 접착이 이루어지되 내열온도가 200 ~ 500℃인 엘라스토머(elastomer, 탄성중합체)인 것을 특징으로 하는 플라즈마 챔버용 캐소드 전극.
- 챔버 내부로 공급된 반응가스를 캐소드 전극과 애노드 전극 사이에 인가되는 고주파 전압을 통해 여기된 상태의 플라즈마 상태로 변환시키는 플라즈마 챔버의 캐소드 전극을 제조하는 방법에 있어서,전극링의 하부에 접착제 그루브를 환형의 홈 형상으로 형성하는 한편 상기 접착제 그루브의 하부 상에 탄성 스트랩이 안착설치되도록 하기 위한 스트랩 그루브를 환형의 홈 형상으로 형성하고, 상기 스트랩 그루브 내측에 금속재질로 된 탄성 스트랩을 안착 설치한 상태에서 접착제인 엘라스토머를 도포한 후 원판형상으로 된 실리콘 재질의 전극판이 전극링의 하부측에 부착되도록 하되, 상기 탄성 스트랩 을 통해 전극링과 전극판이 전기적으로 접촉되도록 하는 것을 특징으로 하는 플라즈마 챔버용 캐소드 전극의 제조방법.
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KR100977315B1 true KR100977315B1 (ko) | 2010-08-23 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200103434A (ko) | 2019-02-25 | 2020-09-02 | (주)원세미콘 | 레이저 마킹 및 드릴을 이용한 미세 홀 가공방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100283117B1 (ko) | 1998-10-13 | 2001-06-01 | 고석태 | 반도체장치 제조용 식각설비의 전극판 조립체 |
KR200238795Y1 (ko) | 2001-04-12 | 2001-10-11 | 주식회사 기림세미텍 | 에칭장치용 전극 어셈블리 |
US20020127853A1 (en) | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
JP2004006561A (ja) | 2002-04-22 | 2004-01-08 | Nisshinbo Ind Inc | 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置 |
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- 2008-04-10 KR KR1020080033274A patent/KR100977315B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100283117B1 (ko) | 1998-10-13 | 2001-06-01 | 고석태 | 반도체장치 제조용 식각설비의 전극판 조립체 |
US20020127853A1 (en) | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
KR200238795Y1 (ko) | 2001-04-12 | 2001-10-11 | 주식회사 기림세미텍 | 에칭장치용 전극 어셈블리 |
JP2004006561A (ja) | 2002-04-22 | 2004-01-08 | Nisshinbo Ind Inc | 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200103434A (ko) | 2019-02-25 | 2020-09-02 | (주)원세미콘 | 레이저 마킹 및 드릴을 이용한 미세 홀 가공방법 |
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