JP2004523652A - 物理気相成長ターゲット／バッキングプレートアセンブリー；及び物理気相成長ターゲット／バッキングプレートアセンブリーの形成方法 - Google Patents

物理気相成長ターゲット／バッキングプレートアセンブリー；及び物理気相成長ターゲット／バッキングプレートアセンブリーの形成方法 Download PDF

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Publication number
JP2004523652A
JP2004523652A JP2002561098A JP2002561098A JP2004523652A JP 2004523652 A JP2004523652 A JP 2004523652A JP 2002561098 A JP2002561098 A JP 2002561098A JP 2002561098 A JP2002561098 A JP 2002561098A JP 2004523652 A JP2004523652 A JP 2004523652A
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JP
Japan
Prior art keywords
tie layer
assembly
layer
target
backing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002561098A
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English (en)
Japanese (ja)
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JP2004523652A5 (enExample
Inventor
コーラー，ロン・ディー
クーパー，マシュー・エス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2004523652A publication Critical patent/JP2004523652A/ja
Publication of JP2004523652A5 publication Critical patent/JP2004523652A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Laminated Bodies (AREA)
JP2002561098A 2000-10-27 2001-10-19 物理気相成長ターゲット／バッキングプレートアセンブリー；及び物理気相成長ターゲット／バッキングプレートアセンブリーの形成方法 Withdrawn JP2004523652A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/699,899 US6376281B1 (en) 2000-10-27 2000-10-27 Physical vapor deposition target/backing plate assemblies
PCT/US2001/050345 WO2002061167A2 (en) 2000-10-27 2001-10-19 Target/backing plate assemblies

Publications (2)

Publication Number Publication Date
JP2004523652A true JP2004523652A (ja) 2004-08-05
JP2004523652A5 JP2004523652A5 (enExample) 2005-04-21

Family

ID=24811389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561098A Withdrawn JP2004523652A (ja) 2000-10-27 2001-10-19 物理気相成長ターゲット／バッキングプレートアセンブリー；及び物理気相成長ターゲット／バッキングプレートアセンブリーの形成方法

Country Status (8)

Country Link
US (2) US6376281B1 (enExample)
EP (1) EP1352104A2 (enExample)
JP (1) JP2004523652A (enExample)
KR (1) KR20030045138A (enExample)
CN (1) CN1494601A (enExample)
AU (1) AU2002249859A1 (enExample)
TW (1) TW533514B (enExample)
WO (1) WO2002061167A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008536541A (ja) * 2005-03-15 2008-09-11 セブ ソシエテ アノニム 清掃し易い調理面、およびそのような面を含む家電機器
WO2012066764A1 (ja) * 2010-11-17 2012-05-24 株式会社アルバック バッキングプレート、ターゲットアセンブリ及びスパッタリング用ターゲット

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JP3554835B2 (ja) * 1997-08-19 2004-08-18 株式会社小松製作所 バッキングプレートの製造方法
US6619537B1 (en) * 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
JP3905295B2 (ja) * 2000-10-02 2007-04-18 日鉱金属株式会社 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法
EP1513963A1 (en) * 2002-06-14 2005-03-16 Tosoh Smd, Inc. Target and method of diffusion bonding target to backing plate
US6848608B2 (en) * 2002-10-01 2005-02-01 Cabot Corporation Method of bonding sputtering target materials
WO2004094688A1 (en) * 2003-04-02 2004-11-04 Honeywell International Inc. Pvd target/backing plate constructions; and methods of forming pvd target/backing plate constructions
US20050016833A1 (en) * 2003-04-17 2005-01-27 Shannon Lynn Plasma sprayed indium tin oxide target for sputtering
US20090078570A1 (en) * 2003-08-11 2009-03-26 Wuwen Yi Target/backing plate constructions, and methods of forming target/backing plate constructions
JP4970034B2 (ja) * 2003-08-11 2012-07-04 ハネウェル・インターナショナル・インコーポレーテッド ターゲット／バッキングプレート構造物、及びターゲット／バッキングプレート構造物の形成法
US20080063889A1 (en) * 2006-09-08 2008-03-13 Alan Duckham Reactive Multilayer Joining WIth Improved Metallization Techniques
US20090186195A1 (en) * 2006-09-08 2009-07-23 Reactive Nanotechnologies, Inc. Reactive Multilayer Joining With Improved Metallization Techniques
EP2119808B1 (en) 2007-02-09 2014-09-17 JX Nippon Mining & Metals Corporation Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same
US20110048954A1 (en) * 2009-09-03 2011-03-03 U.S. Government As Represented By The Secretary Of The Army Enhanced solderability using a substantially pure nickel layer deposited by physical vapor deposition
JP5779491B2 (ja) * 2011-12-13 2015-09-16 株式会社アルバック ターゲット装置、スパッタリング装置、ターゲット装置の製造方法
US20160053365A1 (en) * 2014-08-20 2016-02-25 Honeywell International Inc. Encapsulated composite backing plate
CN111424245B (zh) * 2020-04-24 2022-07-01 先导薄膜材料（广东）有限公司 一种钴钽锆靶材的制备方法
US10973908B1 (en) 2020-05-14 2021-04-13 David Gordon Bermudes Expression of SARS-CoV-2 spike protein receptor binding domain in attenuated salmonella as a vaccine
CN113667948A (zh) * 2021-07-26 2021-11-19 中信戴卡股份有限公司 一种铝合金车轮表面真空镀膜方法
CN116275338A (zh) * 2023-03-29 2023-06-23 宁波江丰电子材料股份有限公司 一种MoTaNb靶材与铜背板的焊接方法

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JPS5936411A (ja) 1982-08-23 1984-02-28 Seiko Instr & Electronics Ltd Ｇｔカツト水晶振動子
JPS60181269A (ja) * 1984-02-27 1985-09-14 Matsushita Electric Ind Co Ltd スパツタ−タ−ゲツト
JPS61163208A (ja) 1985-01-11 1986-07-23 Sumitomo Metal Ind Ltd 熱間継目無鋼管圧延用工具の熱処理方法
JPH0677805B2 (ja) * 1986-07-10 1994-10-05 株式会社神戸製鋼所 スパツタリング用タ−ゲツトのボンデイング方法
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JPH0586465A (ja) * 1991-06-28 1993-04-06 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
US5522535A (en) * 1994-11-15 1996-06-04 Tosoh Smd, Inc. Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies
US5799860A (en) * 1995-08-07 1998-09-01 Applied Materials, Inc. Preparation and bonding of workpieces to form sputtering targets and other assemblies
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US5863398A (en) 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
NL1008197C2 (nl) 1998-02-04 1999-08-05 Stork Screens Bv Werkwijze voor het vervaardigen van een drager met een afscherming voor stoorstraling, alsmede afschermingsmateriaal.
US6183686B1 (en) * 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008536541A (ja) * 2005-03-15 2008-09-11 セブ ソシエテ アノニム 清掃し易い調理面、およびそのような面を含む家電機器
WO2012066764A1 (ja) * 2010-11-17 2012-05-24 株式会社アルバック バッキングプレート、ターゲットアセンブリ及びスパッタリング用ターゲット
CN103210116A (zh) * 2010-11-17 2013-07-17 株式会社爱发科 背衬板、靶组件和溅射靶
JPWO2012066764A1 (ja) * 2010-11-17 2014-05-12 株式会社アルバック バッキングプレート、ターゲットアセンブリ及びスパッタリング用ターゲット

Also Published As

Publication number Publication date
TW533514B (en) 2003-05-21
US6649449B2 (en) 2003-11-18
CN1494601A (zh) 2004-05-05
US6376281B1 (en) 2002-04-23
WO2002061167A2 (en) 2002-08-08
WO2002061167A3 (en) 2003-07-24
US20020068386A1 (en) 2002-06-06
AU2002249859A1 (en) 2002-08-12
EP1352104A2 (en) 2003-10-15
KR20030045138A (ko) 2003-06-09

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