JP2004517505A5 - - Google Patents
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- Publication number
- JP2004517505A5 JP2004517505A5 JP2002560183A JP2002560183A JP2004517505A5 JP 2004517505 A5 JP2004517505 A5 JP 2004517505A5 JP 2002560183 A JP2002560183 A JP 2002560183A JP 2002560183 A JP2002560183 A JP 2002560183A JP 2004517505 A5 JP2004517505 A5 JP 2004517505A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- mask
- mask layer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- -1 hydrogen sulfide compound Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 4
- 239000004215 Carbon black (E152) Substances 0.000 claims 3
- 229930195733 hydrocarbon Natural products 0.000 claims 3
- 150000002430 hydrocarbons Chemical group 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 239000007787 solid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10103524A DE10103524A1 (de) | 2001-01-26 | 2001-01-26 | Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske |
| PCT/DE2002/000130 WO2002059951A1 (de) | 2001-01-26 | 2002-01-17 | Halbleiteranordnung und verfahren zur ätzung einer schicht der halbleiteranordnung mittels einer siliziumhaltigen ätzmaske |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004517505A JP2004517505A (ja) | 2004-06-10 |
| JP2004517505A5 true JP2004517505A5 (enExample) | 2005-05-26 |
Family
ID=7671843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002560183A Pending JP2004517505A (ja) | 2001-01-26 | 2002-01-17 | 半導体構造、および、シリコンを含有したエッチングマスクを用いた半導体構造の層のエッチング方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6864188B2 (enExample) |
| EP (1) | EP1360711B1 (enExample) |
| JP (1) | JP2004517505A (enExample) |
| KR (1) | KR100516839B1 (enExample) |
| DE (2) | DE10103524A1 (enExample) |
| TW (1) | TW548743B (enExample) |
| WO (1) | WO2002059951A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7553770B2 (en) | 2007-06-06 | 2009-06-30 | Micron Technology, Inc. | Reverse masking profile improvements in high aspect ratio etch |
| KR101972159B1 (ko) | 2012-08-24 | 2019-08-16 | 에스케이하이닉스 주식회사 | 실리콘함유하드마스크를 구비한 반도체장치 및 그 제조 방법 |
| KR102051529B1 (ko) | 2013-03-25 | 2020-01-08 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법, 그리고 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
| CN111584358A (zh) * | 2020-04-09 | 2020-08-25 | 中国科学院微电子研究所 | 刻蚀沟槽的方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1147014A (en) * | 1967-01-27 | 1969-04-02 | Westinghouse Electric Corp | Improvements in diffusion masking |
| DE2557079C2 (de) * | 1975-12-18 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen einer Maskierungsschicht |
| JPS5351970A (en) * | 1976-10-21 | 1978-05-11 | Toshiba Corp | Manufacture for semiconductor substrate |
| US4211601A (en) * | 1978-07-31 | 1980-07-08 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| US4283249A (en) * | 1979-05-02 | 1981-08-11 | International Business Machines Corporation | Reactive ion etching |
| US5362682A (en) * | 1980-04-10 | 1994-11-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| NL8301262A (nl) * | 1983-04-11 | 1984-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij met behulp van ionenimplantatie patronen worden aangebracht in een laag siliciumnitride. |
| JPS62224687A (ja) * | 1986-03-25 | 1987-10-02 | Anelva Corp | エツチング方法 |
| US5091047A (en) * | 1986-09-11 | 1992-02-25 | National Semiconductor Corp. | Plasma etching using a bilayer mask |
| FR2610140B1 (fr) * | 1987-01-26 | 1990-04-20 | Commissariat Energie Atomique | Circuit integre cmos et procede de fabrication de ses zones d'isolation electrique |
| US4782009A (en) * | 1987-04-03 | 1988-11-01 | General Electric Company | Method of coating and imaging photopatternable silicone polyamic acid |
| FR2652448B1 (fr) * | 1989-09-28 | 1994-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un circuit integre mis haute tension. |
| JP3006048B2 (ja) * | 1990-07-27 | 2000-02-07 | ソニー株式会社 | ドライエッチング方法 |
| US5240554A (en) * | 1991-01-22 | 1993-08-31 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5217568A (en) * | 1992-02-03 | 1993-06-08 | Motorola, Inc. | Silicon etching process using polymeric mask, for example, to form V-groove for an optical fiber coupling |
| JP3111661B2 (ja) * | 1992-07-24 | 2000-11-27 | ソニー株式会社 | ドライエッチング方法 |
| US5350484A (en) * | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
| US5525535A (en) * | 1995-07-26 | 1996-06-11 | United Microelectronics Corporation | Method for making doped well and field regions on semiconductor substrates for field effect transistors using liquid phase deposition of oxides |
| JPH1160735A (ja) * | 1996-12-09 | 1999-03-05 | Toshiba Corp | ポリシランおよびパターン形成方法 |
| TW505984B (en) * | 1997-12-12 | 2002-10-11 | Applied Materials Inc | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures |
| US6025273A (en) * | 1998-04-06 | 2000-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for etching reliable small contact holes with improved profiles for semiconductor integrated circuits using a carbon doped hard mask |
| US6387819B1 (en) * | 1998-04-29 | 2002-05-14 | Applied Materials, Inc. | Method for etching low K dielectric layers |
| JP2001210726A (ja) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US6527968B1 (en) * | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
| KR20030007904A (ko) * | 2000-06-06 | 2003-01-23 | 이케이씨 테크놀로지, 인코포레이티드 | 전자 재료 제조 방법 |
| US6583046B1 (en) * | 2001-07-13 | 2003-06-24 | Advanced Micro Devices, Inc. | Post-treatment of low-k dielectric for prevention of photoresist poisoning |
-
2001
- 2001-01-26 DE DE10103524A patent/DE10103524A1/de not_active Ceased
-
2002
- 2002-01-17 EP EP02700152A patent/EP1360711B1/de not_active Expired - Lifetime
- 2002-01-17 WO PCT/DE2002/000130 patent/WO2002059951A1/de not_active Ceased
- 2002-01-17 KR KR10-2003-7009879A patent/KR100516839B1/ko not_active Expired - Fee Related
- 2002-01-17 JP JP2002560183A patent/JP2004517505A/ja active Pending
- 2002-01-17 DE DE50209714T patent/DE50209714D1/de not_active Expired - Fee Related
- 2002-01-21 TW TW091100879A patent/TW548743B/zh not_active IP Right Cessation
-
2003
- 2003-06-04 US US10/454,518 patent/US6864188B2/en not_active Expired - Lifetime
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