JP2006270076A5 - - Google Patents

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Publication number
JP2006270076A5
JP2006270076A5 JP2006044997A JP2006044997A JP2006270076A5 JP 2006270076 A5 JP2006270076 A5 JP 2006270076A5 JP 2006044997 A JP2006044997 A JP 2006044997A JP 2006044997 A JP2006044997 A JP 2006044997A JP 2006270076 A5 JP2006270076 A5 JP 2006270076A5
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JP
Japan
Prior art keywords
gate electrode
film
forming
semiconductor
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006044997A
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English (en)
Japanese (ja)
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JP2006270076A (ja
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Publication date
Application filed filed Critical
Priority to JP2006044997A priority Critical patent/JP2006270076A/ja
Priority claimed from JP2006044997A external-priority patent/JP2006270076A/ja
Publication of JP2006270076A publication Critical patent/JP2006270076A/ja
Publication of JP2006270076A5 publication Critical patent/JP2006270076A5/ja
Withdrawn legal-status Critical Current

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JP2006044997A 2005-02-25 2006-02-22 半導体装置、および半導体装置の作製方法 Withdrawn JP2006270076A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006044997A JP2006270076A (ja) 2005-02-25 2006-02-22 半導体装置、および半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005051169 2005-02-25
JP2006044997A JP2006270076A (ja) 2005-02-25 2006-02-22 半導体装置、および半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2006270076A JP2006270076A (ja) 2006-10-05
JP2006270076A5 true JP2006270076A5 (enExample) 2009-03-26

Family

ID=37205634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006044997A Withdrawn JP2006270076A (ja) 2005-02-25 2006-02-22 半導体装置、および半導体装置の作製方法

Country Status (1)

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JP (1) JP2006270076A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5500771B2 (ja) * 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
EP2075840B1 (en) * 2007-12-28 2014-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for dicing a wafer with semiconductor elements formed thereon and corresponding device
WO2018022142A1 (en) * 2016-07-29 2018-02-01 Applied Materials, Inc. Performing decoupled plasma fluorination to reduce interfacial defects in film stack
TW202038326A (zh) * 2019-01-11 2020-10-16 日商索尼半導體解決方案公司 氧化物半導體膜之蝕刻方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283759A (ja) * 1996-02-15 1997-10-31 Sony Corp 自己整合コンタクトの形成方法
JPH1050660A (ja) * 1996-07-31 1998-02-20 Nec Corp シリコン窒化膜のエッチング方法
JP3595716B2 (ja) * 1999-03-01 2004-12-02 株式会社東芝 半導体装置の製造方法
JP2001196581A (ja) * 2000-01-17 2001-07-19 Oki Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2004071590A (ja) * 2002-08-01 2004-03-04 Sharp Corp 薄膜トランジスタを備えた装置およびその製造方法

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