JP2006270076A - 半導体装置、および半導体装置の作製方法 - Google Patents
半導体装置、および半導体装置の作製方法 Download PDFInfo
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- JP2006270076A JP2006270076A JP2006044997A JP2006044997A JP2006270076A JP 2006270076 A JP2006270076 A JP 2006270076A JP 2006044997 A JP2006044997 A JP 2006044997A JP 2006044997 A JP2006044997 A JP 2006044997A JP 2006270076 A JP2006270076 A JP 2006270076A
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- silicon nitride
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008166724A (ja) * | 2006-12-05 | 2008-07-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2014241415A (ja) * | 2007-12-28 | 2014-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び、半導体装置 |
| WO2018022142A1 (en) * | 2016-07-29 | 2018-02-01 | Applied Materials, Inc. | Performing decoupled plasma fluorination to reduce interfacial defects in film stack |
| CN113169067A (zh) * | 2019-01-11 | 2021-07-23 | 索尼半导体解决方案公司 | 氧化物半导体膜的蚀刻方法 |
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| JPH09283759A (ja) * | 1996-02-15 | 1997-10-31 | Sony Corp | 自己整合コンタクトの形成方法 |
| JPH1050660A (ja) * | 1996-07-31 | 1998-02-20 | Nec Corp | シリコン窒化膜のエッチング方法 |
| JP2000252263A (ja) * | 1999-03-01 | 2000-09-14 | Toshiba Corp | 半導体装置の製造方法 |
| JP2001196581A (ja) * | 2000-01-17 | 2001-07-19 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2004071590A (ja) * | 2002-08-01 | 2004-03-04 | Sharp Corp | 薄膜トランジスタを備えた装置およびその製造方法 |
-
2006
- 2006-02-22 JP JP2006044997A patent/JP2006270076A/ja not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283759A (ja) * | 1996-02-15 | 1997-10-31 | Sony Corp | 自己整合コンタクトの形成方法 |
| JPH1050660A (ja) * | 1996-07-31 | 1998-02-20 | Nec Corp | シリコン窒化膜のエッチング方法 |
| JP2000252263A (ja) * | 1999-03-01 | 2000-09-14 | Toshiba Corp | 半導体装置の製造方法 |
| JP2001196581A (ja) * | 2000-01-17 | 2001-07-19 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2004071590A (ja) * | 2002-08-01 | 2004-03-04 | Sharp Corp | 薄膜トランジスタを備えた装置およびその製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008166724A (ja) * | 2006-12-05 | 2008-07-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8853782B2 (en) | 2006-12-05 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2014241415A (ja) * | 2007-12-28 | 2014-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び、半導体装置 |
| WO2018022142A1 (en) * | 2016-07-29 | 2018-02-01 | Applied Materials, Inc. | Performing decoupled plasma fluorination to reduce interfacial defects in film stack |
| CN113169067A (zh) * | 2019-01-11 | 2021-07-23 | 索尼半导体解决方案公司 | 氧化物半导体膜的蚀刻方法 |
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