TW548743B - Semiconductor arrangement and process for etching a layer of the semiconductor arrangement by means of a silicon-containing etching mask - Google Patents
Semiconductor arrangement and process for etching a layer of the semiconductor arrangement by means of a silicon-containing etching mask Download PDFInfo
- Publication number
- TW548743B TW548743B TW091100879A TW91100879A TW548743B TW 548743 B TW548743 B TW 548743B TW 091100879 A TW091100879 A TW 091100879A TW 91100879 A TW91100879 A TW 91100879A TW 548743 B TW548743 B TW 548743B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substance
- silicon
- etching
- cover
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000126 substance Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 150000002430 hydrocarbons Chemical group 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 10
- 239000011593 sulfur Substances 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 2
- 239000004575 stone Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002483 hydrogen compounds Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 nitride nitride Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10103524A DE10103524A1 (de) | 2001-01-26 | 2001-01-26 | Verfahren und Halbleiteranordnung zur Ätzung einer Schicht eines Halbleitersubstrats mittels einer siliziumhaltigen Ätzmaske |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW548743B true TW548743B (en) | 2003-08-21 |
Family
ID=7671843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091100879A TW548743B (en) | 2001-01-26 | 2002-01-21 | Semiconductor arrangement and process for etching a layer of the semiconductor arrangement by means of a silicon-containing etching mask |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6864188B2 (enExample) |
| EP (1) | EP1360711B1 (enExample) |
| JP (1) | JP2004517505A (enExample) |
| KR (1) | KR100516839B1 (enExample) |
| DE (2) | DE10103524A1 (enExample) |
| TW (1) | TW548743B (enExample) |
| WO (1) | WO2002059951A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7553770B2 (en) | 2007-06-06 | 2009-06-30 | Micron Technology, Inc. | Reverse masking profile improvements in high aspect ratio etch |
| KR101972159B1 (ko) | 2012-08-24 | 2019-08-16 | 에스케이하이닉스 주식회사 | 실리콘함유하드마스크를 구비한 반도체장치 및 그 제조 방법 |
| KR102051529B1 (ko) | 2013-03-25 | 2020-01-08 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법, 그리고 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
| CN111584358A (zh) * | 2020-04-09 | 2020-08-25 | 中国科学院微电子研究所 | 刻蚀沟槽的方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1147014A (en) * | 1967-01-27 | 1969-04-02 | Westinghouse Electric Corp | Improvements in diffusion masking |
| DE2557079C2 (de) * | 1975-12-18 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen einer Maskierungsschicht |
| JPS5351970A (en) * | 1976-10-21 | 1978-05-11 | Toshiba Corp | Manufacture for semiconductor substrate |
| US4211601A (en) * | 1978-07-31 | 1980-07-08 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| US4283249A (en) * | 1979-05-02 | 1981-08-11 | International Business Machines Corporation | Reactive ion etching |
| US5362682A (en) * | 1980-04-10 | 1994-11-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| NL8301262A (nl) * | 1983-04-11 | 1984-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij met behulp van ionenimplantatie patronen worden aangebracht in een laag siliciumnitride. |
| JPS62224687A (ja) * | 1986-03-25 | 1987-10-02 | Anelva Corp | エツチング方法 |
| US5091047A (en) * | 1986-09-11 | 1992-02-25 | National Semiconductor Corp. | Plasma etching using a bilayer mask |
| FR2610140B1 (fr) * | 1987-01-26 | 1990-04-20 | Commissariat Energie Atomique | Circuit integre cmos et procede de fabrication de ses zones d'isolation electrique |
| US4782009A (en) * | 1987-04-03 | 1988-11-01 | General Electric Company | Method of coating and imaging photopatternable silicone polyamic acid |
| FR2652448B1 (fr) * | 1989-09-28 | 1994-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un circuit integre mis haute tension. |
| JP3006048B2 (ja) * | 1990-07-27 | 2000-02-07 | ソニー株式会社 | ドライエッチング方法 |
| US5240554A (en) * | 1991-01-22 | 1993-08-31 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5217568A (en) * | 1992-02-03 | 1993-06-08 | Motorola, Inc. | Silicon etching process using polymeric mask, for example, to form V-groove for an optical fiber coupling |
| JP3111661B2 (ja) * | 1992-07-24 | 2000-11-27 | ソニー株式会社 | ドライエッチング方法 |
| US5350484A (en) * | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
| US5525535A (en) * | 1995-07-26 | 1996-06-11 | United Microelectronics Corporation | Method for making doped well and field regions on semiconductor substrates for field effect transistors using liquid phase deposition of oxides |
| JPH1160735A (ja) * | 1996-12-09 | 1999-03-05 | Toshiba Corp | ポリシランおよびパターン形成方法 |
| TW505984B (en) * | 1997-12-12 | 2002-10-11 | Applied Materials Inc | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures |
| US6025273A (en) * | 1998-04-06 | 2000-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for etching reliable small contact holes with improved profiles for semiconductor integrated circuits using a carbon doped hard mask |
| US6387819B1 (en) * | 1998-04-29 | 2002-05-14 | Applied Materials, Inc. | Method for etching low K dielectric layers |
| JP2001210726A (ja) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US6527968B1 (en) * | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
| KR20030007904A (ko) * | 2000-06-06 | 2003-01-23 | 이케이씨 테크놀로지, 인코포레이티드 | 전자 재료 제조 방법 |
| US6583046B1 (en) * | 2001-07-13 | 2003-06-24 | Advanced Micro Devices, Inc. | Post-treatment of low-k dielectric for prevention of photoresist poisoning |
-
2001
- 2001-01-26 DE DE10103524A patent/DE10103524A1/de not_active Ceased
-
2002
- 2002-01-17 EP EP02700152A patent/EP1360711B1/de not_active Expired - Lifetime
- 2002-01-17 WO PCT/DE2002/000130 patent/WO2002059951A1/de not_active Ceased
- 2002-01-17 KR KR10-2003-7009879A patent/KR100516839B1/ko not_active Expired - Fee Related
- 2002-01-17 JP JP2002560183A patent/JP2004517505A/ja active Pending
- 2002-01-17 DE DE50209714T patent/DE50209714D1/de not_active Expired - Fee Related
- 2002-01-21 TW TW091100879A patent/TW548743B/zh not_active IP Right Cessation
-
2003
- 2003-06-04 US US10/454,518 patent/US6864188B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6864188B2 (en) | 2005-03-08 |
| KR20030074745A (ko) | 2003-09-19 |
| EP1360711B1 (de) | 2007-03-14 |
| DE50209714D1 (de) | 2007-04-26 |
| JP2004517505A (ja) | 2004-06-10 |
| WO2002059951A1 (de) | 2002-08-01 |
| KR100516839B1 (ko) | 2005-09-26 |
| DE10103524A1 (de) | 2002-08-22 |
| US20030207588A1 (en) | 2003-11-06 |
| EP1360711A1 (de) | 2003-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |