JP2004356528A5 - - Google Patents

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Publication number
JP2004356528A5
JP2004356528A5 JP2003154812A JP2003154812A JP2004356528A5 JP 2004356528 A5 JP2004356528 A5 JP 2004356528A5 JP 2003154812 A JP2003154812 A JP 2003154812A JP 2003154812 A JP2003154812 A JP 2003154812A JP 2004356528 A5 JP2004356528 A5 JP 2004356528A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003154812A
Other versions
JP2004356528A (ja
JP4408653B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2003154812A external-priority patent/JP4408653B2/ja
Priority to JP2003154812A priority Critical patent/JP4408653B2/ja
Priority to TW093115475A priority patent/TW200509256A/zh
Priority to PCT/JP2004/007841 priority patent/WO2004107431A1/ja
Priority to CNA2004800150997A priority patent/CN1930668A/zh
Priority to KR1020057022905A priority patent/KR100887330B1/ko
Publication of JP2004356528A publication Critical patent/JP2004356528A/ja
Priority to US11/289,330 priority patent/US7655574B2/en
Publication of JP2004356528A5 publication Critical patent/JP2004356528A5/ja
Priority to US12/632,131 priority patent/US8021987B2/en
Publication of JP4408653B2 publication Critical patent/JP4408653B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003154812A 2003-05-30 2003-05-30 基板処理方法および半導体装置の製造方法 Expired - Fee Related JP4408653B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003154812A JP4408653B2 (ja) 2003-05-30 2003-05-30 基板処理方法および半導体装置の製造方法
KR1020057022905A KR100887330B1 (ko) 2003-05-30 2004-05-28 절연막의 개질 방법 및 반도체 장치의 제조 방법
PCT/JP2004/007841 WO2004107431A1 (ja) 2003-05-30 2004-05-28 絶縁膜の改質方法
CNA2004800150997A CN1930668A (zh) 2003-05-30 2004-05-28 绝缘膜的改性方法
TW093115475A TW200509256A (en) 2003-05-30 2004-05-28 Method for modifying insulating film
US11/289,330 US7655574B2 (en) 2003-05-30 2005-11-30 Method of modifying insulating film
US12/632,131 US8021987B2 (en) 2003-05-30 2009-12-07 Method of modifying insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003154812A JP4408653B2 (ja) 2003-05-30 2003-05-30 基板処理方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004356528A JP2004356528A (ja) 2004-12-16
JP2004356528A5 true JP2004356528A5 (ja) 2006-07-13
JP4408653B2 JP4408653B2 (ja) 2010-02-03

Family

ID=33487334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003154812A Expired - Fee Related JP4408653B2 (ja) 2003-05-30 2003-05-30 基板処理方法および半導体装置の製造方法

Country Status (6)

Country Link
US (2) US7655574B2 (ja)
JP (1) JP4408653B2 (ja)
KR (1) KR100887330B1 (ja)
CN (1) CN1930668A (ja)
TW (1) TW200509256A (ja)
WO (1) WO2004107431A1 (ja)

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US7888217B2 (en) * 2005-10-20 2011-02-15 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US7767515B2 (en) * 2006-02-27 2010-08-03 Synopsys, Inc. Managing integrated circuit stress using stress adjustment trenches
WO2007138937A1 (en) 2006-05-26 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7951693B2 (en) 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US7691693B2 (en) * 2007-06-01 2010-04-06 Synopsys, Inc. Method for suppressing layout sensitivity of threshold voltage in a transistor array
US7895548B2 (en) * 2007-10-26 2011-02-22 Synopsys, Inc. Filler cells for design optimization in a place-and-route system
US20090108408A1 (en) * 2007-10-29 2009-04-30 Synopsys, Inc. Method for Trapping Implant Damage in a Semiconductor Substrate
US9472423B2 (en) * 2007-10-30 2016-10-18 Synopsys, Inc. Method for suppressing lattice defects in a semiconductor substrate
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5334199B2 (ja) 2008-01-22 2013-11-06 ルネサスエレクトロニクス株式会社 容量素子を有する半導体装置
JP2011124240A (ja) * 2008-03-31 2011-06-23 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体
JP4636133B2 (ja) * 2008-07-22 2011-02-23 東京エレクトロン株式会社 窒化チタン膜の改質方法及び改質装置
JP5166297B2 (ja) 2009-01-21 2013-03-21 東京エレクトロン株式会社 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
EP3174106A1 (en) 2011-09-30 2017-05-31 Intel Corporation Tungsten gates for non-planar transistors
US9202699B2 (en) 2011-09-30 2015-12-01 Intel Corporation Capping dielectric structure for transistor gates
US9580776B2 (en) 2011-09-30 2017-02-28 Intel Corporation Tungsten gates for non-planar transistors
DE112011105702T5 (de) 2011-10-01 2014-07-17 Intel Corporation Source-/Drain-Kontakte für nicht planare Transistoren
WO2013085490A1 (en) * 2011-12-06 2013-06-13 Intel Corporation Interlayer dielectric for non-planar transistors
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
US9412847B2 (en) * 2013-03-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned passivation of active regions
CN103730373B (zh) 2013-12-31 2016-09-07 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
KR102263827B1 (ko) * 2014-03-21 2021-06-14 삼성디스플레이 주식회사 산화물 반도체 증착장치 및 이를 이용한 산화물 반도체의 제조 방법
CN105336628B (zh) * 2015-09-25 2018-10-19 武汉新芯集成电路制造有限公司 一种晶圆表面键合工艺及一种半导体器件结构
JP6597296B2 (ja) * 2015-12-25 2019-10-30 東京エレクトロン株式会社 基板処理方法
US10737575B2 (en) 2017-11-22 2020-08-11 Ford Global Technologies, Llc Power device parameter adjustment

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JP3603611B2 (ja) * 1998-09-03 2004-12-22 セイコーエプソン株式会社 半導体装置の製造方法
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
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JP4454883B2 (ja) 2001-04-26 2010-04-21 東京エレクトロン株式会社 半導体装置の製造方法
WO2003015151A1 (en) 2001-08-02 2003-02-20 Tokyo Electron Limited Base material treating method and electron device-use material
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JP4256340B2 (ja) * 2002-05-16 2009-04-22 東京エレクトロン株式会社 基板処理方法
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
JP2004079931A (ja) * 2002-08-22 2004-03-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法

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