JP2004326096A - 平板表示素子 - Google Patents
平板表示素子 Download PDFInfo
- Publication number
- JP2004326096A JP2004326096A JP2004108960A JP2004108960A JP2004326096A JP 2004326096 A JP2004326096 A JP 2004326096A JP 2004108960 A JP2004108960 A JP 2004108960A JP 2004108960 A JP2004108960 A JP 2004108960A JP 2004326096 A JP2004326096 A JP 2004326096A
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- flat panel
- thin film
- panel display
- film transistor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 118
- 239000010409 thin film Substances 0.000 claims abstract description 66
- 230000001788 irregular Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- -1 for example Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- AGVJBLHVMNHENQ-UHFFFAOYSA-N Calcium sulfide Chemical class [S-2].[Ca+2] AGVJBLHVMNHENQ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Abstract
【解決手段】駆動薄膜トランジスタ、前記駆動薄膜トランジスタによって駆動される第1電極、及び前記第1電極と共に発光部を駆動する第2電極を具備したサブピクセルがマトリックス状に配列された平板表示素子であって、前記駆動薄膜トランジスタの半導体チャンネルを形成する半導体層には直線状の不均一部が所定の間隔で形成されており、1列の駆動薄膜トランジスタの半導体チャンネルそれぞれを接続する仮想線L2は前記不均一部と平行しないことを特徴とする平板表示素子。これにより、各半導体チャンネルが不均一部を含まないためにサブピクセル間に輝度差がなく、したがって非常に均一な輝度を示して画像の品質が向上するという長所がある。
【選択図】図9
Description
L2 仮想線
H 水平駆動回路
Claims (15)
- 駆動薄膜トランジスタ、前記駆動薄膜トランジスタによって駆動される第1電極、及び前記第1電極と共に発光部を駆動する第2電極を具備したサブピクセルがマトリックス状に配列された平板表示素子であって、
前記駆動薄膜トランジスタは半導体層から形成された半導体チャンネルを含み、前記半導体層上には直線状の不均一部が互いに離隔されており、1列の駆動薄膜トランジスタの半導体チャンネルそれぞれを接続する仮想線は前記不均一部と平行しないことを特徴とする平板表示素子。 - 前記駆動薄膜トランジスタの半導体チャンネルを接続する仮想線は直線でないことを特徴とする請求項1に記載の平板表示素子。
- 前記駆動薄膜トランジスタの半導体チャンネルを接続する仮想線はジグザグ状になっていることを特徴とする請求項2に記載の平板表示素子。
- 前記ジグザグ状は規則的なジグザグ状であることを特徴とする請求項3に記載の平板表示素子。
- 前記ジグザグ状は不規則的なジグザグ状であることを特徴とする請求項3に記載の平板表示素子。
- 前記ジグザグ状は2段のジグザグ状であることを特徴とする請求項3に記載の平板表示素子。
- 前記ジグザグ状は3段のジグザグ状であることを特徴とする請求項3に記載の平板表示素子。
- 前記不均一部は一定の間隔で形成されたことを特徴とする請求項1に記載の平板表示素子。
- 前記不均一部は一定の間隔で形成され、前記ジグザグ状の幅は前記不均一部の幅より大きいことを特徴とする請求項3に記載の平板表示素子。
- 駆動薄膜トランジスタ、前記駆動薄膜トランジスタによって駆動される第1電極、及び前記第1電極と共に発光部を駆動する第2電極を具備したサブピクセルがマトリックス状に配列された平板表示素子であって、
前記駆動薄膜トランジスタは半導体層から形成された半導体チャンネルを含み、前記半導体層上には直線状の不均一部が互いに離隔されており、前記駆動薄膜トランジスタの半導体チャンネルそれぞれは少なくとも一つの不均一部を具備したことを特徴とする平板表示素子。 - 前記半導体チャンネルそれぞれは同数の不均一部を具備したことを特徴とする請求項10に記載の平板表示素子。
- 前記駆動薄膜トランジスタの半導体チャンネルは、非結晶質シリコンを多結晶質シリコンに結晶化させるために照射されるレーザービームの幅と、前記レーザービームがオーバーラップされていない部分の比率とを乗算した数値の長さを有することを特徴とする請求項11に記載の平板表示素子。
- 前記不均一部は一定の間隔で形成されたことを特徴とする請求項10に記載の平板表示素子。
- 駆動薄膜トランジスタ、前記駆動薄膜トランジスタによって駆動される第1電極、及び前記第1電極と共に発光部を駆動する第2電極を具備したサブピクセルがマトリックス状に配列された平板表示素子であって、
前記駆動薄膜トランジスタは半導体層から形成された半導体チャンネルを含み、前記半導体層上には直線状の不均一部が互いに離隔されており、前記駆動薄膜トランジスタの半導体チャンネルは前記不均一部間に形成されたことを特徴とする平板表示素子。 - 前記不均一部は一定の間隔で形成されたことを特徴とする請求項14に記載の平板表示素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0027071A KR100528913B1 (ko) | 2003-04-29 | 2003-04-29 | 평판표시소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004326096A true JP2004326096A (ja) | 2004-11-18 |
Family
ID=36773430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004108960A Pending JP2004326096A (ja) | 2003-04-29 | 2004-04-01 | 平板表示素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7196747B2 (ja) |
EP (2) | EP1473778B1 (ja) |
JP (1) | JP2004326096A (ja) |
KR (1) | KR100528913B1 (ja) |
CN (2) | CN1276400C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016033661A (ja) * | 2014-07-30 | 2016-03-10 | エルジー ディスプレイ カンパニー リミテッド | 有機発光表示パネル |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008009276A (ja) * | 2006-06-30 | 2008-01-17 | Canon Inc | 表示装置及びそれを用いた情報処理装置 |
TWI366174B (en) * | 2007-03-03 | 2012-06-11 | Au Optronics Corp | Pixel control device and display apparatus utilizing said pixel control device |
TWI540931B (zh) * | 2010-04-01 | 2016-07-01 | 友達光電股份有限公司 | 有機電激發光元件封裝及其製造方法 |
CN113540125B (zh) * | 2021-07-13 | 2024-01-05 | 武汉天马微电子有限公司 | 阵列基板、显示面板和显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3244518B2 (ja) | 1991-07-30 | 2002-01-07 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
JP2814049B2 (ja) * | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JPH08201846A (ja) | 1995-01-25 | 1996-08-09 | Matsushita Electric Ind Co Ltd | レーザーアニール法及び液晶表示装置 |
JP3390603B2 (ja) | 1995-05-31 | 2003-03-24 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
JP3580033B2 (ja) | 1996-06-20 | 2004-10-20 | ソニー株式会社 | 薄膜半導体装置及びその製造方法とレーザアニール装置 |
JP3357798B2 (ja) | 1996-09-30 | 2002-12-16 | シャープ株式会社 | 半導体装置およびその製造方法 |
US5981974A (en) * | 1996-09-30 | 1999-11-09 | Sharp Kabushiki Kaisha | Semiconductor device and method for fabricating the same |
JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP4497596B2 (ja) | 1999-09-30 | 2010-07-07 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
JP5030345B2 (ja) * | 2000-09-29 | 2012-09-19 | 三洋電機株式会社 | 半導体装置 |
JP4925528B2 (ja) | 2000-09-29 | 2012-04-25 | 三洋電機株式会社 | 表示装置 |
JP3620490B2 (ja) | 2000-11-22 | 2005-02-16 | ソニー株式会社 | アクティブマトリクス型表示装置 |
US20020102821A1 (en) * | 2001-01-29 | 2002-08-01 | Apostolos Voutsas | Mask pattern design to improve quality uniformity in lateral laser crystallized poly-Si films |
US6495405B2 (en) | 2001-01-29 | 2002-12-17 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films |
JP4380954B2 (ja) | 2001-09-28 | 2009-12-09 | 三洋電機株式会社 | アクティブマトリクス型表示装置 |
-
2003
- 2003-04-29 KR KR10-2003-0027071A patent/KR100528913B1/ko active IP Right Grant
-
2004
- 2004-01-12 US US10/754,546 patent/US7196747B2/en not_active Expired - Lifetime
- 2004-01-19 EP EP04090017A patent/EP1473778B1/en not_active Expired - Lifetime
- 2004-01-19 EP EP10173951.4A patent/EP2249391B1/en not_active Expired - Lifetime
- 2004-01-20 CN CNB2004100033285A patent/CN1276400C/zh not_active Expired - Lifetime
- 2004-01-20 CN CN2005101370647A patent/CN1783501B/zh not_active Expired - Lifetime
- 2004-04-01 JP JP2004108960A patent/JP2004326096A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016033661A (ja) * | 2014-07-30 | 2016-03-10 | エルジー ディスプレイ カンパニー リミテッド | 有機発光表示パネル |
US9634294B2 (en) | 2014-07-30 | 2017-04-25 | Lg Display Co., Ltd. | Method of manufacturing organic light emitting display panel |
Also Published As
Publication number | Publication date |
---|---|
KR100528913B1 (ko) | 2005-11-16 |
EP1473778A1 (en) | 2004-11-03 |
EP1473778B1 (en) | 2012-12-26 |
US7196747B2 (en) | 2007-03-27 |
CN1783501A (zh) | 2006-06-07 |
CN1276400C (zh) | 2006-09-20 |
CN1542706A (zh) | 2004-11-03 |
KR20040092761A (ko) | 2004-11-04 |
EP2249391A2 (en) | 2010-11-10 |
EP2249391A3 (en) | 2012-08-22 |
EP2249391B1 (en) | 2019-10-02 |
CN1783501B (zh) | 2013-01-16 |
US20040218109A1 (en) | 2004-11-04 |
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