JP2004319974A - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP2004319974A
JP2004319974A JP2004068488A JP2004068488A JP2004319974A JP 2004319974 A JP2004319974 A JP 2004319974A JP 2004068488 A JP2004068488 A JP 2004068488A JP 2004068488 A JP2004068488 A JP 2004068488A JP 2004319974 A JP2004319974 A JP 2004319974A
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Japan
Prior art keywords
layer
electrode
semiconductor device
drift layer
concentration
Prior art date
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Pending
Application number
JP2004068488A
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English (en)
Japanese (ja)
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JP2004319974A5 (enExample
Inventor
Tomonori Komachi
友則 小町
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
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Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP2004068488A priority Critical patent/JP2004319974A/ja
Publication of JP2004319974A publication Critical patent/JP2004319974A/ja
Priority to US11/075,258 priority patent/US7535056B2/en
Priority to EP05005254A priority patent/EP1583152A3/en
Publication of JP2004319974A5 publication Critical patent/JP2004319974A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004068488A 2003-04-02 2004-03-11 半導体装置及び半導体装置の製造方法 Pending JP2004319974A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004068488A JP2004319974A (ja) 2003-04-02 2004-03-11 半導体装置及び半導体装置の製造方法
US11/075,258 US7535056B2 (en) 2004-03-11 2005-03-08 Semiconductor device having a low concentration layer formed outside a drift layer
EP05005254A EP1583152A3 (en) 2004-03-11 2005-03-10 Semiconductor device with lightly doped layer and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003098799 2003-04-02
JP2004068488A JP2004319974A (ja) 2003-04-02 2004-03-11 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004319974A true JP2004319974A (ja) 2004-11-11
JP2004319974A5 JP2004319974A5 (enExample) 2005-07-14

Family

ID=33478807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004068488A Pending JP2004319974A (ja) 2003-04-02 2004-03-11 半導体装置及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2004319974A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336008A (ja) * 2003-04-16 2004-11-25 Fuji Electric Holdings Co Ltd 逆阻止型絶縁ゲート形バイポーラトランジスタおよびその製造方法
JP2005136064A (ja) * 2003-10-29 2005-05-26 Fuji Electric Holdings Co Ltd 半導体装置
JP2006216927A (ja) * 2005-02-03 2006-08-17 Power Integrations Inc エッジ終端構造を持つ高電圧縦型トランジスタ
JP2006319218A (ja) * 2005-05-13 2006-11-24 Sanken Electric Co Ltd 半導体装置
JP2007096078A (ja) * 2005-09-29 2007-04-12 Yokogawa Electric Corp 半導体装置及び半導体装置の製造方法
JP2007189192A (ja) * 2005-12-15 2007-07-26 Toshiba Corp 半導体装置
JP2007242914A (ja) * 2006-03-09 2007-09-20 Denso Corp 半導体装置およびスーパージャンクション構造を有する半導体基板の製造方法
JP2010028018A (ja) * 2008-07-24 2010-02-04 Fuji Electric Device Technology Co Ltd 半導体ウエハおよび半導体装置と半導体装置の製造方法
JP2010525605A (ja) * 2007-04-23 2010-07-22 アイスモス・テクノロジー・リミテッド 熱的に敏感な再充填材料を備えたトレンチ型半導体デバイスの製造方法
JP2011124325A (ja) * 2009-12-09 2011-06-23 Renesas Electronics Corp 半導体装置、及びその製造方法
JP2011243696A (ja) * 2010-05-17 2011-12-01 Denso Corp 縦型半導体素子を備えた半導体装置
JP2014049465A (ja) * 2012-08-29 2014-03-17 Toyoda Gosei Co Ltd 縦型半導体装置およびその製造方法
JP2014090057A (ja) * 2012-10-30 2014-05-15 Mitsubishi Electric Corp 炭化珪素半導体装置
WO2015005010A1 (ja) * 2013-07-12 2015-01-15 住友電気工業株式会社 半導体装置およびその製造方法
JP2015170698A (ja) * 2014-03-06 2015-09-28 新日本無線株式会社 半導体装置、その半導体装置の製造方法および検査方法
CN111668212A (zh) * 2019-03-07 2020-09-15 三菱电机株式会社 半导体装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336008A (ja) * 2003-04-16 2004-11-25 Fuji Electric Holdings Co Ltd 逆阻止型絶縁ゲート形バイポーラトランジスタおよびその製造方法
JP2005136064A (ja) * 2003-10-29 2005-05-26 Fuji Electric Holdings Co Ltd 半導体装置
JP2006216927A (ja) * 2005-02-03 2006-08-17 Power Integrations Inc エッジ終端構造を持つ高電圧縦型トランジスタ
JP2011097117A (ja) * 2005-02-03 2011-05-12 Power Integrations Inc エッジ終端構造を持つ高電圧縦型トランジスタ
JP2006319218A (ja) * 2005-05-13 2006-11-24 Sanken Electric Co Ltd 半導体装置
JP2007096078A (ja) * 2005-09-29 2007-04-12 Yokogawa Electric Corp 半導体装置及び半導体装置の製造方法
JP2007189192A (ja) * 2005-12-15 2007-07-26 Toshiba Corp 半導体装置
JP2007242914A (ja) * 2006-03-09 2007-09-20 Denso Corp 半導体装置およびスーパージャンクション構造を有する半導体基板の製造方法
JP2010525605A (ja) * 2007-04-23 2010-07-22 アイスモス・テクノロジー・リミテッド 熱的に敏感な再充填材料を備えたトレンチ型半導体デバイスの製造方法
JP2010028018A (ja) * 2008-07-24 2010-02-04 Fuji Electric Device Technology Co Ltd 半導体ウエハおよび半導体装置と半導体装置の製造方法
JP2011124325A (ja) * 2009-12-09 2011-06-23 Renesas Electronics Corp 半導体装置、及びその製造方法
JP2011243696A (ja) * 2010-05-17 2011-12-01 Denso Corp 縦型半導体素子を備えた半導体装置
JP2014049465A (ja) * 2012-08-29 2014-03-17 Toyoda Gosei Co Ltd 縦型半導体装置およびその製造方法
JP2014090057A (ja) * 2012-10-30 2014-05-15 Mitsubishi Electric Corp 炭化珪素半導体装置
WO2015005010A1 (ja) * 2013-07-12 2015-01-15 住友電気工業株式会社 半導体装置およびその製造方法
JP2015170698A (ja) * 2014-03-06 2015-09-28 新日本無線株式会社 半導体装置、その半導体装置の製造方法および検査方法
CN111668212A (zh) * 2019-03-07 2020-09-15 三菱电机株式会社 半导体装置
CN111668212B (zh) * 2019-03-07 2023-09-29 三菱电机株式会社 半导体装置

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