JP2004256323A - 単結晶引上げ装置および単結晶製造方法 - Google Patents
単結晶引上げ装置および単結晶製造方法 Download PDFInfo
- Publication number
- JP2004256323A JP2004256323A JP2003046420A JP2003046420A JP2004256323A JP 2004256323 A JP2004256323 A JP 2004256323A JP 2003046420 A JP2003046420 A JP 2003046420A JP 2003046420 A JP2003046420 A JP 2003046420A JP 2004256323 A JP2004256323 A JP 2004256323A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- heat shield
- melt
- crystal pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims abstract description 141
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000000155 melt Substances 0.000 claims abstract description 72
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 57
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 30
- 239000010439 graphite Substances 0.000 claims abstract description 30
- 239000010453 quartz Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 29
- 238000002844 melting Methods 0.000 claims description 28
- 230000008018 melting Effects 0.000 claims description 28
- 239000012159 carrier gas Substances 0.000 claims description 17
- 150000001722 carbon compounds Chemical class 0.000 claims description 9
- 238000013459 approach Methods 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 90
- 229910052786 argon Inorganic materials 0.000 abstract description 45
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000000725 suspension Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010309 melting process Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003046420A JP2004256323A (ja) | 2003-02-24 | 2003-02-24 | 単結晶引上げ装置および単結晶製造方法 |
| TW93102364A TW200426256A (en) | 2003-02-24 | 2004-02-03 | Drawing apparatus for single crystal and method for producing single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003046420A JP2004256323A (ja) | 2003-02-24 | 2003-02-24 | 単結晶引上げ装置および単結晶製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2004256323A true JP2004256323A (ja) | 2004-09-16 |
Family
ID=33112969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003046420A Pending JP2004256323A (ja) | 2003-02-24 | 2003-02-24 | 単結晶引上げ装置および単結晶製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004256323A (enExample) |
| TW (1) | TW200426256A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006064797A1 (ja) * | 2004-12-13 | 2006-06-22 | Komatsu Denshi Kinzoku Kabushiki Kaisha | 半導体単結晶製造装置および製造方法 |
| WO2015046746A1 (ko) * | 2013-09-25 | 2015-04-02 | 엘지실트론 주식회사 | 도가니 및 이를 포함하는 잉곳성장장치 |
| JP2019031415A (ja) * | 2017-08-07 | 2019-02-28 | 株式会社Sumco | シリコン単結晶の製造方法 |
| JP2023078641A (ja) * | 2021-11-26 | 2023-06-07 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上装置及び単結晶の製造方法 |
-
2003
- 2003-02-24 JP JP2003046420A patent/JP2004256323A/ja active Pending
-
2004
- 2004-02-03 TW TW93102364A patent/TW200426256A/zh not_active IP Right Cessation
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006064797A1 (ja) * | 2004-12-13 | 2006-06-22 | Komatsu Denshi Kinzoku Kabushiki Kaisha | 半導体単結晶製造装置および製造方法 |
| JP2006169010A (ja) * | 2004-12-13 | 2006-06-29 | Komatsu Electronic Metals Co Ltd | 半導体単結晶製造装置および製造方法 |
| US8753446B2 (en) | 2004-12-13 | 2014-06-17 | Sumco Techxiv Kabushiki Kaisha | Semiconductor single crystal production device and producing method therefor |
| WO2015046746A1 (ko) * | 2013-09-25 | 2015-04-02 | 엘지실트론 주식회사 | 도가니 및 이를 포함하는 잉곳성장장치 |
| KR101516486B1 (ko) | 2013-09-25 | 2015-05-04 | 주식회사 엘지실트론 | 잉곳성장장치 |
| JP2019031415A (ja) * | 2017-08-07 | 2019-02-28 | 株式会社Sumco | シリコン単結晶の製造方法 |
| JP2023078641A (ja) * | 2021-11-26 | 2023-06-07 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上装置及び単結晶の製造方法 |
| JP7705786B2 (ja) | 2021-11-26 | 2025-07-10 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上装置及び単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200426256A (en) | 2004-12-01 |
| TWI297741B (enExample) | 2008-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100798594B1 (ko) | 실리콘 단결정의 인상 방법 | |
| JPS6136197A (ja) | チヨクラルスキー技術を用いて浅いるつぼから半導体材料の単結晶を成長させる装置及び方法 | |
| JP3724571B2 (ja) | シリコン単結晶の製造方法及びシリコン単結晶の製造装置 | |
| US20060016387A1 (en) | Silicon wafer, its manufacturing method, and its manufacturing apparatus | |
| JP3671562B2 (ja) | 単結晶の製造装置および製造方法 | |
| JP3838013B2 (ja) | シリコン単結晶の製造方法 | |
| EP0373899B1 (en) | Monocrystal ingot pulling apparatus | |
| JP3564830B2 (ja) | シリコン単結晶中の酸素濃度制御方法 | |
| JP2005001977A (ja) | チョクラルスキー法による原料供給装置および原料供給方法 | |
| US20100126410A1 (en) | Apparatus and method for pulling silicon single crystal | |
| JP3873568B2 (ja) | シリコン単結晶の引上げ装置 | |
| JP4310980B2 (ja) | シリコン単結晶の引上げ方法 | |
| JP2004256322A (ja) | シリコン単結晶の製造方法、シリコン単結晶およびシリコン単結晶の引上げ装置 | |
| JP3642175B2 (ja) | シリコン単結晶の引上げ装置及びその引上げ方法 | |
| JP4221797B2 (ja) | シリコン単結晶育成前の多結晶シリコンの融解方法 | |
| JP4304608B2 (ja) | シリコン単結晶引上げ装置の熱遮蔽部材 | |
| JP4360069B2 (ja) | シリコン単結晶の育成方法 | |
| JP4211334B2 (ja) | シリコン単結晶の引上げ装置及びその引上げ方法 | |
| JP4207498B2 (ja) | シリコン単結晶の引上げ装置及びその引上げ方法 | |
| JP4255578B2 (ja) | 単結晶引上装置 | |
| CN109666968B (zh) | 硅单晶的制造方法 | |
| JP3719329B2 (ja) | シリコン単結晶用引上げ装置 | |
| JPH09202685A (ja) | 単結晶引き上げ装置 | |
| KR20190069056A (ko) | 잉곳 성장장치 | |
| JP2009126738A (ja) | シリコン単結晶の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060116 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080513 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20080520 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A02 | Decision of refusal |
Effective date: 20081014 Free format text: JAPANESE INTERMEDIATE CODE: A02 |