TW200426256A - Drawing apparatus for single crystal and method for producing single crystal - Google Patents
Drawing apparatus for single crystal and method for producing single crystal Download PDFInfo
- Publication number
- TW200426256A TW200426256A TW93102364A TW93102364A TW200426256A TW 200426256 A TW200426256 A TW 200426256A TW 93102364 A TW93102364 A TW 93102364A TW 93102364 A TW93102364 A TW 93102364A TW 200426256 A TW200426256 A TW 200426256A
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- crucible
- aforementioned
- gas
- furnace
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 87
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 23
- 239000010439 graphite Substances 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims description 24
- 239000002994 raw material Substances 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000000155 melt Substances 0.000 claims description 21
- 239000004575 stone Substances 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 239000012159 carrier gas Substances 0.000 claims description 17
- 238000010309 melting process Methods 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 5
- 150000001722 carbon compounds Chemical class 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 241000196324 Embryophyta Species 0.000 claims 1
- 241000209140 Triticum Species 0.000 claims 1
- 235000021307 Triticum Nutrition 0.000 claims 1
- 230000001174 ascending effect Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000008710 crystal-8 Substances 0.000 claims 1
- 239000012768 molten material Substances 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 64
- 229910052786 argon Inorganic materials 0.000 abstract description 32
- 230000007246 mechanism Effects 0.000 abstract description 7
- 230000002829 reductive effect Effects 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000009423 ventilation Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 241001674048 Phthiraptera Species 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000003723 Smelting Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000008267 milk Substances 0.000 description 3
- 210000004080 milk Anatomy 0.000 description 3
- 235000013336 milk Nutrition 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000237858 Gastropoda Species 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009291 secondary effect Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- SHXWCVYOXRDMCX-UHFFFAOYSA-N 3,4-methylenedioxymethamphetamine Chemical compound CNC(C)CC1=CC=C2OCOC2=C1 SHXWCVYOXRDMCX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 241000110847 Kochia Species 0.000 description 1
- 241000237536 Mytilus edulis Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RHZUVFJBSILHOK-UHFFFAOYSA-N anthracen-1-ylmethanolate Chemical compound C1=CC=C2C=C3C(C[O-])=CC=CC3=CC2=C1 RHZUVFJBSILHOK-UHFFFAOYSA-N 0.000 description 1
- 239000003830 anthracite Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000009628 lidan Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000028327 secretion Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 230000001256 tonic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003046420A JP2004256323A (ja) | 2003-02-24 | 2003-02-24 | 単結晶引上げ装置および単結晶製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200426256A true TW200426256A (en) | 2004-12-01 |
| TWI297741B TWI297741B (enExample) | 2008-06-11 |
Family
ID=33112969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93102364A TW200426256A (en) | 2003-02-24 | 2004-02-03 | Drawing apparatus for single crystal and method for producing single crystal |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004256323A (enExample) |
| TW (1) | TW200426256A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶製造装置および製造方法 |
| KR101516486B1 (ko) | 2013-09-25 | 2015-05-04 | 주식회사 엘지실트론 | 잉곳성장장치 |
| JP6593401B2 (ja) * | 2017-08-07 | 2019-10-23 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の製造方法 |
| JP7705786B2 (ja) * | 2021-11-26 | 2025-07-10 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上装置及び単結晶の製造方法 |
-
2003
- 2003-02-24 JP JP2003046420A patent/JP2004256323A/ja active Pending
-
2004
- 2004-02-03 TW TW93102364A patent/TW200426256A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI297741B (enExample) | 2008-06-11 |
| JP2004256323A (ja) | 2004-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6461427B2 (en) | Barium doping of molten silicon for use in crystal growing process | |
| CN105420806B (zh) | 一种单晶炉二次加料系统 | |
| CN104499045B (zh) | 一种泡生法蓝宝石晶体生长炉 | |
| JPH11310496A (ja) | 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置 | |
| TW201231415A (en) | Composite crucible and method of manufacturing the same | |
| TWI403461B (zh) | Method and apparatus for improving yield and yield of metallurgical silicon | |
| TWI294471B (enExample) | ||
| JP2010534614A5 (enExample) | ||
| US11125503B2 (en) | Melting furnace | |
| TW201035392A (en) | Quartz glass crucible for pulling silicon single crystal and method for producing silicon single crystal | |
| JP2010275151A (ja) | シリカガラスルツボ | |
| CN211713251U (zh) | 一种用于降低单晶电阻率的重掺掺杂装置 | |
| JPH10101482A (ja) | 単結晶シリコンの製造装置および製造方法 | |
| CN201058893Y (zh) | 直拉法生长掺镓硅单晶的装置 | |
| CN115896921A (zh) | 一种坩埚下降可视化接种的晶体生长装置及其方法 | |
| JP4356517B2 (ja) | シリコン単結晶引上装置およびシリコン単結晶の製造方法 | |
| JPH059097A (ja) | シリコン単結晶の引上方法 | |
| CN208791811U (zh) | 晶体生长装置 | |
| CN105442042B (zh) | 一种用于减少多晶硅锭碳含量的铸锭炉及其制备方法 | |
| US9546436B2 (en) | Polycrystalline silicon and method of casting the same | |
| TWI297741B (enExample) | ||
| CN106591942B (zh) | 多晶硅铸锭用坩埚及其制备方法和多晶硅锭及其制备方法 | |
| CN100552096C (zh) | 一种改进的适用于BaY2F8单晶体生长的温度梯度法及其装置 | |
| US20190056177A1 (en) | Furnace | |
| JP2004217460A (ja) | 水素ドープシリコン単結晶製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |