JP2004235499A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2004235499A
JP2004235499A JP2003023324A JP2003023324A JP2004235499A JP 2004235499 A JP2004235499 A JP 2004235499A JP 2003023324 A JP2003023324 A JP 2003023324A JP 2003023324 A JP2003023324 A JP 2003023324A JP 2004235499 A JP2004235499 A JP 2004235499A
Authority
JP
Japan
Prior art keywords
potential
power supply
transistor
supplied
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003023324A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004235499A5 (enExample
Inventor
Masaki Kawabata
真己 川端
Masahiro Yoshihara
正浩 吉原
Hidekazu Makino
英一 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003023324A priority Critical patent/JP2004235499A/ja
Priority to US10/768,394 priority patent/US6985023B2/en
Publication of JP2004235499A publication Critical patent/JP2004235499A/ja
Publication of JP2004235499A5 publication Critical patent/JP2004235499A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
JP2003023324A 2003-01-31 2003-01-31 半導体装置 Pending JP2004235499A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003023324A JP2004235499A (ja) 2003-01-31 2003-01-31 半導体装置
US10/768,394 US6985023B2 (en) 2003-01-31 2004-01-30 Selective switching of a transistor's back gate potential

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003023324A JP2004235499A (ja) 2003-01-31 2003-01-31 半導体装置

Publications (2)

Publication Number Publication Date
JP2004235499A true JP2004235499A (ja) 2004-08-19
JP2004235499A5 JP2004235499A5 (enExample) 2005-04-21

Family

ID=32952154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003023324A Pending JP2004235499A (ja) 2003-01-31 2003-01-31 半導体装置

Country Status (2)

Country Link
US (1) US6985023B2 (enExample)
JP (1) JP2004235499A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009017640A (ja) * 2007-07-03 2009-01-22 Nec Electronics Corp 昇圧回路、およびその昇圧回路を備える集積回路

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100321094A1 (en) * 2010-08-29 2010-12-23 Hao Luo Method and circuit implementation for reducing the parameter fluctuations in integrated circuits

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585450B2 (ja) 1990-04-18 1997-02-26 東芝マイクロエレクトロニクス株式会社 半導体回路装置
JPH07131332A (ja) 1993-11-04 1995-05-19 Pfu Ltd Ｃｍｏｓ回路
JP3379050B2 (ja) 1993-11-15 2003-02-17 富士通株式会社 半導体装置
US5606287A (en) 1994-06-17 1997-02-25 Fujitsu Limited Operational amplifier having stable operations for a wide range of source voltage, and current detector circuit employing a small number of elements
JP3180662B2 (ja) * 1996-03-29 2001-06-25 日本電気株式会社 電源切り替え回路
JP3814385B2 (ja) * 1997-10-14 2006-08-30 株式会社ルネサステクノロジ 半導体集積回路装置
DE69823982D1 (de) * 1998-05-29 2004-06-24 St Microelectronics Srl Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen
JP2001186007A (ja) * 1999-12-24 2001-07-06 Sharp Corp 金属酸化膜半導体トランジスタ回路およびそれを用いた半導体集積回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009017640A (ja) * 2007-07-03 2009-01-22 Nec Electronics Corp 昇圧回路、およびその昇圧回路を備える集積回路

Also Published As

Publication number Publication date
US20040227566A1 (en) 2004-11-18
US6985023B2 (en) 2006-01-10

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