JP2004227749A5 - - Google Patents

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Publication number
JP2004227749A5
JP2004227749A5 JP2004000817A JP2004000817A JP2004227749A5 JP 2004227749 A5 JP2004227749 A5 JP 2004227749A5 JP 2004000817 A JP2004000817 A JP 2004000817A JP 2004000817 A JP2004000817 A JP 2004000817A JP 2004227749 A5 JP2004227749 A5 JP 2004227749A5
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JP
Japan
Prior art keywords
layer
layers
sensor
free
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004000817A
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English (en)
Japanese (ja)
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JP2004227749A (ja
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Publication date
Priority claimed from US10/349,552 external-priority patent/US6927948B2/en
Application filed filed Critical
Publication of JP2004227749A publication Critical patent/JP2004227749A/ja
Publication of JP2004227749A5 publication Critical patent/JP2004227749A5/ja
Pending legal-status Critical Current

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JP2004000817A 2003-01-23 2004-01-06 差動ｃｐｐ型ｇｍｒヘッド Pending JP2004227749A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/349,552 US6927948B2 (en) 2003-01-23 2003-01-23 Differential CPP GMR sensor with free layers separated by metal gap layer

Publications (2)

Publication Number Publication Date
JP2004227749A JP2004227749A (ja) 2004-08-12
JP2004227749A5 true JP2004227749A5 (https=) 2007-02-08

Family

ID=32735418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004000817A Pending JP2004227749A (ja) 2003-01-23 2004-01-06 差動ｃｐｐ型ｇｍｒヘッド

Country Status (3)

Country Link
US (1) US6927948B2 (https=)
JP (1) JP2004227749A (https=)
CN (1) CN100347747C (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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JP2004296000A (ja) * 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
US7436632B2 (en) * 2004-06-30 2008-10-14 Seagate Technology Llc Differential/dual CPP recording head
US7443637B2 (en) * 2005-07-11 2008-10-28 Hitachi Global Storage Technologies Netherlands B.V. Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same
US20070153432A1 (en) * 2005-12-29 2007-07-05 Tdk Corporation Magnetic head
JP2009026400A (ja) * 2007-07-20 2009-02-05 Hitachi Global Storage Technologies Netherlands Bv 差動磁気抵抗効果型磁気ヘッド
US7881018B2 (en) * 2007-09-05 2011-02-01 Hitachi Global Storage Technologies Netherlands B.V. Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise
US7577021B2 (en) * 2007-11-21 2009-08-18 Magic Technologies, Inc. Spin transfer MRAM device with separated CPP assisted writing
JP5027687B2 (ja) * 2008-02-14 2012-09-19 株式会社日立製作所 磁気記録再生ヘッドおよび磁気記録再生装置
US20090207534A1 (en) * 2008-02-19 2009-08-20 Tdk Corporation Magneto-resistance effect element including stack with dual free layer and magnetized shield electrode layers
US7913570B2 (en) 2008-03-08 2011-03-29 Texas Research International, Inc. Environmental damage sensor
US8411392B2 (en) * 2008-06-24 2013-04-02 Seagate Technology Llc Magnetic field sensor including multiple magnetoresistive sensing elements for patterned media
US7974047B2 (en) * 2008-09-02 2011-07-05 Hitachi Global Storage Technologies Netherlands, B.V. Current perpendicular to plane differential magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
JP2010140524A (ja) * 2008-12-09 2010-06-24 Hitachi Global Storage Technologies Netherlands Bv 差動型磁気抵抗効果ヘッド及び磁気記録再生装置
US8659853B2 (en) * 2009-09-07 2014-02-25 Agency For Science, Technology And Research Sensor arrangement
US20110216432A1 (en) * 2010-03-05 2011-09-08 Tdk Corporation Magnetic head comprising two magnetic field sensing part
US9784802B1 (en) 2012-04-11 2017-10-10 Louisiana Tech Research Corporation GMR nanowire sensors
US10718636B1 (en) 2012-04-11 2020-07-21 Louisiana Tech Research Corporation Magneto-resistive sensors
US9103654B1 (en) 2012-04-11 2015-08-11 Louisiana Tech University Research Foundation, A Division Of Louisiana Tech University Foundation, Inc. GMR nanowire sensors
US9542962B2 (en) 2015-01-23 2017-01-10 HGST Netherlands B.V. Multi-sensor reader structure having a current path with increased size to reduce noise
US9704516B2 (en) * 2015-11-30 2017-07-11 International Business Machines Corporation Shorting-resistant current perpendicular to plane sensors
US11201280B2 (en) * 2019-08-23 2021-12-14 Western Digital Technologies, Inc. Bottom leads chemical mechanical planarization for TMR magnetic sensors
US12591026B2 (en) * 2023-06-13 2026-03-31 Allegro Microsystems, Llc Tunnel magnetoresistance element to detect out-of-plane changes in a magnetic field intensity of a magnetic field

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US5155643A (en) 1990-10-30 1992-10-13 Mars Incorporated Unshielded horizontal magnetoresistive head and method of fabricating same
JP2741837B2 (ja) 1993-08-06 1998-04-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜磁気抵抗ヘッド
US5491600A (en) 1994-05-04 1996-02-13 International Business Machines Corporation Multi-layer conductor leads in a magnetoresistive head
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
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US6469873B1 (en) * 1997-04-25 2002-10-22 Hitachi, Ltd. Magnetic head and magnetic storage apparatus using the same
US6313973B1 (en) 1998-06-30 2001-11-06 Kabushiki Kaisha Toshiba Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
JP3212569B2 (ja) * 1999-01-27 2001-09-25 アルプス電気株式会社 デュアルスピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びデュアルスピンバルブ型薄膜磁気素子の製造方法
US6449134B1 (en) * 1999-08-05 2002-09-10 International Business Machines Corporation Read head with file resettable dual spin valve sensor
US6643103B1 (en) * 2000-01-05 2003-11-04 Seagate Technology Llc Very high linear resolution CPP differential dual spin valve magnetoresistive head
US6417999B1 (en) 2000-02-04 2002-07-09 Read-Rite Corporation Magnetoresistive head stabilized structure and method of fabrication thereof
US20020101689A1 (en) * 2000-04-05 2002-08-01 Xuefei Tang High sensitivity spin valve stacks using oxygen in spacer layer deposition
US6538859B1 (en) * 2000-07-31 2003-03-25 International Business Machines Corporation Giant magnetoresistive sensor with an AP-coupled low Hk free layer
US6680827B2 (en) * 2000-08-07 2004-01-20 Tdk Corporation Dual spin valve CPP MR with flux guide between free layers thereof
JP3760095B2 (ja) * 2000-12-14 2006-03-29 株式会社日立グローバルストレージテクノロジーズ ２素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置
US6654209B2 (en) 2001-01-10 2003-11-25 Seagate Technology Llc Low resistance lead structure for a low resistance magnetic read head
US6693776B2 (en) * 2001-03-08 2004-02-17 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor with a spin filter and specular reflector layer
US6650509B2 (en) * 2001-03-20 2003-11-18 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with AP pinned layers
JP3563375B2 (ja) * 2001-06-19 2004-09-08 アルプス電気株式会社 磁気検出素子及び前記磁気検出素子を用いた薄膜磁気ヘッド
US6728078B2 (en) * 2001-06-20 2004-04-27 Hitachi Global Storage Technologies Netherlands B.V. High resistance dual antiparallel (AP) pinned spin valve sensor

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