CN100347747C - 差动cpp gmr磁头 - Google Patents

差动cpp gmr磁头 Download PDF

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Publication number
CN100347747C
CN100347747C CNB2004100078197A CN200410007819A CN100347747C CN 100347747 C CN100347747 C CN 100347747C CN B2004100078197 A CNB2004100078197 A CN B2004100078197A CN 200410007819 A CN200410007819 A CN 200410007819A CN 100347747 C CN100347747 C CN 100347747C
Authority
CN
China
Prior art keywords
layer
free
bolt
spin
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100078197A
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English (en)
Chinese (zh)
Other versions
CN1551113A (zh
Inventor
哈代亚尔·S.·吉尔
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HGST Inc
Original Assignee
Hitachi Global Storage Technologies Inc
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Publication date
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Publication of CN1551113A publication Critical patent/CN1551113A/zh
Application granted granted Critical
Publication of CN100347747C publication Critical patent/CN100347747C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
    • G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
CNB2004100078197A 2003-01-23 2004-01-29 差动cpp gmr磁头 Expired - Fee Related CN100347747C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/349,552 2003-01-23
US10/349,552 US6927948B2 (en) 2003-01-23 2003-01-23 Differential CPP GMR sensor with free layers separated by metal gap layer

Publications (2)

Publication Number Publication Date
CN1551113A CN1551113A (zh) 2004-12-01
CN100347747C true CN100347747C (zh) 2007-11-07

Family

ID=32735418

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100078197A Expired - Fee Related CN100347747C (zh) 2003-01-23 2004-01-29 差动cpp gmr磁头

Country Status (3)

Country Link
US (1) US6927948B2 (https=)
JP (1) JP2004227749A (https=)
CN (1) CN100347747C (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296000A (ja) * 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
US7436632B2 (en) * 2004-06-30 2008-10-14 Seagate Technology Llc Differential/dual CPP recording head
US7443637B2 (en) * 2005-07-11 2008-10-28 Hitachi Global Storage Technologies Netherlands B.V. Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same
US20070153432A1 (en) * 2005-12-29 2007-07-05 Tdk Corporation Magnetic head
JP2009026400A (ja) * 2007-07-20 2009-02-05 Hitachi Global Storage Technologies Netherlands Bv 差動磁気抵抗効果型磁気ヘッド
US7881018B2 (en) * 2007-09-05 2011-02-01 Hitachi Global Storage Technologies Netherlands B.V. Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise
US7577021B2 (en) * 2007-11-21 2009-08-18 Magic Technologies, Inc. Spin transfer MRAM device with separated CPP assisted writing
JP5027687B2 (ja) * 2008-02-14 2012-09-19 株式会社日立製作所 磁気記録再生ヘッドおよび磁気記録再生装置
US20090207534A1 (en) * 2008-02-19 2009-08-20 Tdk Corporation Magneto-resistance effect element including stack with dual free layer and magnetized shield electrode layers
US7913570B2 (en) 2008-03-08 2011-03-29 Texas Research International, Inc. Environmental damage sensor
US8411392B2 (en) * 2008-06-24 2013-04-02 Seagate Technology Llc Magnetic field sensor including multiple magnetoresistive sensing elements for patterned media
US7974047B2 (en) * 2008-09-02 2011-07-05 Hitachi Global Storage Technologies Netherlands, B.V. Current perpendicular to plane differential magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
JP2010140524A (ja) * 2008-12-09 2010-06-24 Hitachi Global Storage Technologies Netherlands Bv 差動型磁気抵抗効果ヘッド及び磁気記録再生装置
US8659853B2 (en) * 2009-09-07 2014-02-25 Agency For Science, Technology And Research Sensor arrangement
US20110216432A1 (en) * 2010-03-05 2011-09-08 Tdk Corporation Magnetic head comprising two magnetic field sensing part
US9784802B1 (en) 2012-04-11 2017-10-10 Louisiana Tech Research Corporation GMR nanowire sensors
US10718636B1 (en) 2012-04-11 2020-07-21 Louisiana Tech Research Corporation Magneto-resistive sensors
US9103654B1 (en) 2012-04-11 2015-08-11 Louisiana Tech University Research Foundation, A Division Of Louisiana Tech University Foundation, Inc. GMR nanowire sensors
US9542962B2 (en) 2015-01-23 2017-01-10 HGST Netherlands B.V. Multi-sensor reader structure having a current path with increased size to reduce noise
US9704516B2 (en) * 2015-11-30 2017-07-11 International Business Machines Corporation Shorting-resistant current perpendicular to plane sensors
US11201280B2 (en) * 2019-08-23 2021-12-14 Western Digital Technologies, Inc. Bottom leads chemical mechanical planarization for TMR magnetic sensors
US12591026B2 (en) * 2023-06-13 2026-03-31 Allegro Microsystems, Llc Tunnel magnetoresistance element to detect out-of-plane changes in a magnetic field intensity of a magnetic field

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1148710A (zh) * 1995-09-11 1997-04-30 国际商业机器公司 具有锁定层逆平行磁化的旋转阀传感器
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
CN1336636A (zh) * 2000-07-31 2002-02-20 国际商业机器公司 带有反向平行耦合的低Hk自由层的巨磁阻传感器

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US5155643A (en) 1990-10-30 1992-10-13 Mars Incorporated Unshielded horizontal magnetoresistive head and method of fabricating same
JP2741837B2 (ja) 1993-08-06 1998-04-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜磁気抵抗ヘッド
US5491600A (en) 1994-05-04 1996-02-13 International Business Machines Corporation Multi-layer conductor leads in a magnetoresistive head
US6195228B1 (en) 1997-01-06 2001-02-27 Nec Research Institute, Inc. Thin, horizontal-plane hall sensors for read-heads in magnetic recording
US6469873B1 (en) * 1997-04-25 2002-10-22 Hitachi, Ltd. Magnetic head and magnetic storage apparatus using the same
US6313973B1 (en) 1998-06-30 2001-11-06 Kabushiki Kaisha Toshiba Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
JP3212569B2 (ja) * 1999-01-27 2001-09-25 アルプス電気株式会社 デュアルスピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びデュアルスピンバルブ型薄膜磁気素子の製造方法
US6449134B1 (en) * 1999-08-05 2002-09-10 International Business Machines Corporation Read head with file resettable dual spin valve sensor
US6643103B1 (en) * 2000-01-05 2003-11-04 Seagate Technology Llc Very high linear resolution CPP differential dual spin valve magnetoresistive head
US6417999B1 (en) 2000-02-04 2002-07-09 Read-Rite Corporation Magnetoresistive head stabilized structure and method of fabrication thereof
US20020101689A1 (en) * 2000-04-05 2002-08-01 Xuefei Tang High sensitivity spin valve stacks using oxygen in spacer layer deposition
US6680827B2 (en) * 2000-08-07 2004-01-20 Tdk Corporation Dual spin valve CPP MR with flux guide between free layers thereof
JP3760095B2 (ja) * 2000-12-14 2006-03-29 株式会社日立グローバルストレージテクノロジーズ ２素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置
US6654209B2 (en) 2001-01-10 2003-11-25 Seagate Technology Llc Low resistance lead structure for a low resistance magnetic read head
US6693776B2 (en) * 2001-03-08 2004-02-17 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor with a spin filter and specular reflector layer
US6650509B2 (en) * 2001-03-20 2003-11-18 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with AP pinned layers
JP3563375B2 (ja) * 2001-06-19 2004-09-08 アルプス電気株式会社 磁気検出素子及び前記磁気検出素子を用いた薄膜磁気ヘッド
US6728078B2 (en) * 2001-06-20 2004-04-27 Hitachi Global Storage Technologies Netherlands B.V. High resistance dual antiparallel (AP) pinned spin valve sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1148710A (zh) * 1995-09-11 1997-04-30 国际商业机器公司 具有锁定层逆平行磁化的旋转阀传感器
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
CN1336636A (zh) * 2000-07-31 2002-02-20 国际商业机器公司 带有反向平行耦合的低Hk自由层的巨磁阻传感器

Also Published As

Publication number Publication date
JP2004227749A (ja) 2004-08-12
US6927948B2 (en) 2005-08-09
CN1551113A (zh) 2004-12-01
US20040145835A1 (en) 2004-07-29

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