JP2004227749A - 差動ｃｐｐ型ｇｍｒヘッド - Google Patents

差動ｃｐｐ型ｇｍｒヘッド Download PDF

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Publication number
JP2004227749A
JP2004227749A JP2004000817A JP2004000817A JP2004227749A JP 2004227749 A JP2004227749 A JP 2004227749A JP 2004000817 A JP2004000817 A JP 2004000817A JP 2004000817 A JP2004000817 A JP 2004000817A JP 2004227749 A JP2004227749 A JP 2004227749A
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JP
Japan
Prior art keywords
layer
sensor
layers
ferromagnetic
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004000817A
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English (en)
Japanese (ja)
Other versions
JP2004227749A5 (https=
Inventor
Sin Gill Hardayal
ハーダヤル・シン・ジル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HGST Netherlands BV
HGST Inc
Original Assignee
Hitachi Global Storage Technologies Netherlands BV
Hitachi Global Storage Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Technologies Netherlands BV, Hitachi Global Storage Technologies Inc filed Critical Hitachi Global Storage Technologies Netherlands BV
Publication of JP2004227749A publication Critical patent/JP2004227749A/ja
Publication of JP2004227749A5 publication Critical patent/JP2004227749A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
    • G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
JP2004000817A 2003-01-23 2004-01-06 差動ｃｐｐ型ｇｍｒヘッド Pending JP2004227749A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/349,552 US6927948B2 (en) 2003-01-23 2003-01-23 Differential CPP GMR sensor with free layers separated by metal gap layer

Publications (2)

Publication Number Publication Date
JP2004227749A true JP2004227749A (ja) 2004-08-12
JP2004227749A5 JP2004227749A5 (https=) 2007-02-08

Family

ID=32735418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004000817A Pending JP2004227749A (ja) 2003-01-23 2004-01-06 差動ｃｐｐ型ｇｍｒヘッド

Country Status (3)

Country Link
US (1) US6927948B2 (https=)
JP (1) JP2004227749A (https=)
CN (1) CN100347747C (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174799B2 (en) 2007-07-20 2012-05-08 Hitachi Global Storage Technologies Netherlands B.V. Differential magnetoresistive magnetic head
US8270122B2 (en) 2008-02-14 2012-09-18 Hitachi, Ltd. Magnetic recording and reproducing device including a differential read head
US8570689B2 (en) 2008-12-09 2013-10-29 HGST Netherlands B.V. Differential magnetoresistive effect head and magnetic recording/reading device

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296000A (ja) * 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
US7436632B2 (en) * 2004-06-30 2008-10-14 Seagate Technology Llc Differential/dual CPP recording head
US7443637B2 (en) * 2005-07-11 2008-10-28 Hitachi Global Storage Technologies Netherlands B.V. Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same
US20070153432A1 (en) * 2005-12-29 2007-07-05 Tdk Corporation Magnetic head
US7881018B2 (en) * 2007-09-05 2011-02-01 Hitachi Global Storage Technologies Netherlands B.V. Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise
US7577021B2 (en) * 2007-11-21 2009-08-18 Magic Technologies, Inc. Spin transfer MRAM device with separated CPP assisted writing
US20090207534A1 (en) * 2008-02-19 2009-08-20 Tdk Corporation Magneto-resistance effect element including stack with dual free layer and magnetized shield electrode layers
US7913570B2 (en) 2008-03-08 2011-03-29 Texas Research International, Inc. Environmental damage sensor
US8411392B2 (en) * 2008-06-24 2013-04-02 Seagate Technology Llc Magnetic field sensor including multiple magnetoresistive sensing elements for patterned media
US7974047B2 (en) * 2008-09-02 2011-07-05 Hitachi Global Storage Technologies Netherlands, B.V. Current perpendicular to plane differential magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
US8659853B2 (en) * 2009-09-07 2014-02-25 Agency For Science, Technology And Research Sensor arrangement
US20110216432A1 (en) * 2010-03-05 2011-09-08 Tdk Corporation Magnetic head comprising two magnetic field sensing part
US9784802B1 (en) 2012-04-11 2017-10-10 Louisiana Tech Research Corporation GMR nanowire sensors
US10718636B1 (en) 2012-04-11 2020-07-21 Louisiana Tech Research Corporation Magneto-resistive sensors
US9103654B1 (en) 2012-04-11 2015-08-11 Louisiana Tech University Research Foundation, A Division Of Louisiana Tech University Foundation, Inc. GMR nanowire sensors
US9542962B2 (en) 2015-01-23 2017-01-10 HGST Netherlands B.V. Multi-sensor reader structure having a current path with increased size to reduce noise
US9704516B2 (en) * 2015-11-30 2017-07-11 International Business Machines Corporation Shorting-resistant current perpendicular to plane sensors
US11201280B2 (en) * 2019-08-23 2021-12-14 Western Digital Technologies, Inc. Bottom leads chemical mechanical planarization for TMR magnetic sensors
US12591026B2 (en) * 2023-06-13 2026-03-31 Allegro Microsystems, Llc Tunnel magnetoresistance element to detect out-of-plane changes in a magnetic field intensity of a magnetic field

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US5155643A (en) 1990-10-30 1992-10-13 Mars Incorporated Unshielded horizontal magnetoresistive head and method of fabricating same
JP2741837B2 (ja) 1993-08-06 1998-04-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜磁気抵抗ヘッド
US5491600A (en) 1994-05-04 1996-02-13 International Business Machines Corporation Multi-layer conductor leads in a magnetoresistive head
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
US5751521A (en) * 1996-09-23 1998-05-12 International Business Machines Corporation Differential spin valve sensor structure
US6195228B1 (en) 1997-01-06 2001-02-27 Nec Research Institute, Inc. Thin, horizontal-plane hall sensors for read-heads in magnetic recording
US6469873B1 (en) * 1997-04-25 2002-10-22 Hitachi, Ltd. Magnetic head and magnetic storage apparatus using the same
US6313973B1 (en) 1998-06-30 2001-11-06 Kabushiki Kaisha Toshiba Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
JP3212569B2 (ja) * 1999-01-27 2001-09-25 アルプス電気株式会社 デュアルスピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びデュアルスピンバルブ型薄膜磁気素子の製造方法
US6449134B1 (en) * 1999-08-05 2002-09-10 International Business Machines Corporation Read head with file resettable dual spin valve sensor
US6643103B1 (en) * 2000-01-05 2003-11-04 Seagate Technology Llc Very high linear resolution CPP differential dual spin valve magnetoresistive head
US6417999B1 (en) 2000-02-04 2002-07-09 Read-Rite Corporation Magnetoresistive head stabilized structure and method of fabrication thereof
US20020101689A1 (en) * 2000-04-05 2002-08-01 Xuefei Tang High sensitivity spin valve stacks using oxygen in spacer layer deposition
US6538859B1 (en) * 2000-07-31 2003-03-25 International Business Machines Corporation Giant magnetoresistive sensor with an AP-coupled low Hk free layer
US6680827B2 (en) * 2000-08-07 2004-01-20 Tdk Corporation Dual spin valve CPP MR with flux guide between free layers thereof
JP3760095B2 (ja) * 2000-12-14 2006-03-29 株式会社日立グローバルストレージテクノロジーズ ２素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置
US6654209B2 (en) 2001-01-10 2003-11-25 Seagate Technology Llc Low resistance lead structure for a low resistance magnetic read head
US6693776B2 (en) * 2001-03-08 2004-02-17 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor with a spin filter and specular reflector layer
US6650509B2 (en) * 2001-03-20 2003-11-18 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with AP pinned layers
JP3563375B2 (ja) * 2001-06-19 2004-09-08 アルプス電気株式会社 磁気検出素子及び前記磁気検出素子を用いた薄膜磁気ヘッド
US6728078B2 (en) * 2001-06-20 2004-04-27 Hitachi Global Storage Technologies Netherlands B.V. High resistance dual antiparallel (AP) pinned spin valve sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174799B2 (en) 2007-07-20 2012-05-08 Hitachi Global Storage Technologies Netherlands B.V. Differential magnetoresistive magnetic head
US8270122B2 (en) 2008-02-14 2012-09-18 Hitachi, Ltd. Magnetic recording and reproducing device including a differential read head
US8570689B2 (en) 2008-12-09 2013-10-29 HGST Netherlands B.V. Differential magnetoresistive effect head and magnetic recording/reading device

Also Published As

Publication number Publication date
US6927948B2 (en) 2005-08-09
CN1551113A (zh) 2004-12-01
US20040145835A1 (en) 2004-07-29
CN100347747C (zh) 2007-11-07

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