CN114730569B - 含不同堆叠传感器的二维磁记录读取头结构及磁盘驱动器 - Google Patents
含不同堆叠传感器的二维磁记录读取头结构及磁盘驱动器 Download PDFInfo
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Abstract
本发明提供一种用于磁盘驱动器中的二维磁记录(TDMR)的混合读取头结构,该混合读取头结构具有两个堆叠的电流垂直于平面的磁阻(CPP‑MR)读取头或在沿磁道方向上彼此基本上对准的传感器,以使两个传感器能够从相同数据磁道读取数据。该结构是在磁盘驱动器滑块上形成的混合结构,其中下部传感器是双自由层(DFL)或剪刀类型的CPP‑MR传感器,并且上部传感器是单自由层(SFL)类型的CPP‑MR传感器。
Description
相关申请的交叉引用
本申请要求于2020年2月14日提交的美国申请号16/792,010的优先权,该申请在本文中全文以引用方式并入。
背景技术
技术领域
本发明整体涉及用于从二维磁记录(TDMR)中的相同数据磁道提供回读信号的两个堆叠磁阻(MR)传感器以及结合该传感器的磁盘驱动器。
相关领域的描述
用作磁记录磁盘驱动器中的读取头的一种类型的常规磁阻(MR)传感器是电流垂直于平面(CPP)传感器,其中感测电流垂直地引导穿过传感器堆叠中的层的平面。CPP-MR传感器具有包括由非磁隔层分隔的两个铁磁层的层堆叠。如果隔层是导电的,例如铜(Cu)或银(Ag),则传感器被称为巨磁阻(GMR)CPP传感器。如果隔层是电绝缘材料,诸如TiO2、MgO或氧化铝(Al2O3),则传感器被称为磁隧道结传感器,也称为隧穿MR或TMR CPP传感器。在被称为单自由层(SFL)传感器的CPP GMR或TMR传感器中,与隔层相邻的一个铁磁层具有其固定的磁化方向(诸如通过与相邻的反铁磁层进行交换耦合来固定),并且其被称为参考层或固定层。在存在外部磁场的情况下,与隔层相邻的其他铁磁层具有其自由旋转的磁化方向,并且其被称为自由层。在感测电流施加到传感器的情况下,由于外部磁场的存在,自由层磁化相对于固定层磁化的旋转可检测为电阻的变化。
另一种类型的CPP GMR或TMR传感器是双自由层(DFL)或“剪刀”传感器,其不具有参考层或固定层而是具有由非磁导电或绝缘隔层分隔的两个自由层。在感测电流施加到DFL传感器的情况下,外部磁场的存在引起两个自由层的磁化相对于彼此的相反旋转,有时被称为“剪刀”效应,并且可检测为电阻的变化。
所提出的使用多个CPP-MR传感器的技术是二维磁记录(TDMR)。在一种类型的TDMR中,两个堆叠的传感器位于单个结构上并且被对准以读取相同数据磁道,在跨磁道方向上具有或不具有一些轻微有意偏置。可以对来自两个传感器的回读信号进行处理,以使相同相对量的电子噪声的信号加倍,或使相同相对量的信号的传感器噪声减少,并由此增加信噪比(SNR)。TDMR读取头结构中的单独CPP-MR传感器中的每一个需要位于磁可渗透材料的两个屏蔽件之间,该屏蔽件从与正被读取的数据位相邻的记录数据位屏蔽传感器。在回读期间,屏蔽件确保每个传感器仅读取来自其目标位的信息。具有两个堆叠的CPP-MR传感器的TDMR磁盘驱动器描述于US 9,042,059B1和US 9,230,578 B2中,两者均转让给与本申请相同的受让人。
发明内容
由于制造和测试各种堆叠两个传感器的CPP-MR传感器结构,已经发现,某些传感器遭受回读信号的不良SNR。如果两个传感器都是SFL传感器,则下部SFL传感器通常具有比上部SFL传感器更低的SNR,并且如果两个传感器都是DFL传感器,则下部传感器具有比上部DFL传感器更高或类似的SNR。另外,两个DFL结构的下部DFL传感器表现出与两个SFL结构的上部SFL传感器基本上相同的SNR。
本发明的实施方案涉及一种用于TDMR的混合堆叠两个传感器的CPP-MR结构,其中下部传感器是DFL传感器,并且上部传感器是SFL传感器。
为了更全面地理解本发明的实质和优点,应当参考结合附图所作的以下具体描述。
附图说明
图1是常规磁记录硬盘驱动器的示意性顶视图,其中移除了可用于二维磁记录(TDMR)的覆盖件。
图2是在图1的方向2-2上的视图,并且其示出了根据现有技术的从磁盘观察的写入头和TDMR读取头结构的端部。
图3是如在图2的方向3-3上从磁盘观察的气体轴承表面(GBS)的视图,其示出了根据现有技术的构成用于TDMR的一种类型的堆叠CPP-MR传感器结构的层。
图4是如将从磁盘观察的GBS的视图,其示出了根据现有技术的构成用于TDMR的两个堆叠单自由层(SFL)传感器的层。
图5是具有GBS的边缘视图的侧视截面图,其示出了构成用于TDMR的两个堆叠双自由层(DFL)传感器的层。
图6A是具有GBS的边缘视图的侧视截面图,其描绘了在构成上部DFL传感器的层已沉积为全膜之后并且在结构后边缘的成角度离子铣削之前的两个DFL传感器结构。
图6B是具有GBS的边缘视图的侧视截面图,其描绘了在结构后边缘的成角度离子铣削之后的两个DFL传感器结构并且示出了中心磁屏蔽件的薄化。
图7A是根据本发明的实施方案的从磁盘观察的GBS的视图,其示出了构成下部DFL传感器和上部SFL传感器的混合堆叠CPP-MR传感器结构的层。
图7B是根据本发明的实施方案的具有GBS的边缘视图的侧视截面图,其示出了构成下部DFL传感器和上部SFL传感器的混合堆叠CPP-MR传感器结构的层。
具体实施方式
本发明的CPP-MR传感器结构的实施方案具有用于TDMR磁盘驱动器的应用,其操作将参考图1至图3简要描述。图1是可用于TDMR的常规磁记录硬盘驱动器的框图。磁盘驱动器包括磁记录磁盘12和支撑在磁盘驱动器外壳或基座16上的旋转音圈电机(VCM)致动器14。磁盘12具有旋转中心13,并且通过安装到基座16上的主轴电机(未示出)在方向15上旋转。致动器14围绕轴线17枢转,并且包括刚性致动器臂18。大致柔性的悬架20包括挠曲件23,并且附接到臂18的端部。头携载件或气体轴承滑块22附接到挠曲件23。磁记录读/写头24在滑块22的后表面25上形成。挠曲件23和悬架20使滑块能够在通过旋转磁盘12产生的气体(通常是空气或氦气)轴承上“倾斜”和“滚动”。旋转致动器14使头24在磁盘12上沿弧形路径30在磁盘12的数据区域的内径(ID)与外径(OD)之间移动,并且在读取和写入数据期间将头24维持在数据磁道上。通常,存在堆叠在毂部上的多个磁盘,该多个磁盘通过主轴电机旋转,其中单独的滑块和读/写头与每个磁盘表面相关联。
臂电子器件或读/写电子集成电路(R/W IC)芯片或模块40附接到致动器14。柔性电缆44提供R/W IC 40与磁盘驱动系统电子器件43之间的电连接,该磁盘驱动系统电子器件位于安装到基座16上的电路板46上。柔性电缆44由固定支架45刚性地附接在连接到系统电子器件43的一端。R/W IC模块40继而通过延伸穿过悬架20并连接到滑块22的多个电路径连接。
图2是沿图1中的方向2-2截取的滑块22的放大端视图和磁盘12的截面。滑块22附接到挠曲件23,并且具有面向磁盘12的气体轴承表面(GBS)27和与GBS大致正交的后表面25。GBS27使来自旋转磁盘12的气流产生气体(通常是空气或氦气)轴承,该气体轴承支撑滑块22非常接近或靠近磁盘12的表面接触。读/写头24在后表面25上形成,并且通过与后表面25上的滑块终端垫29电连接而连接到磁盘驱动读/写电子器件。如图2的截面图所示,磁盘12是常规连续介质(CM)磁盘,其中记录层50是记录材料的连续层。在CM磁盘中,当写入头在连续记录层上写入时创建具有磁道宽度(TW)的同心数据磁道。
图3是沿图2的方向3-3的视图,并且其示出了从磁盘12观察的读/写头24的端部。图3未按比例绘制,因为难以显示非常小的尺寸。读/写头24是使用众所周知的薄膜头制造技术在滑块22的后表面25上沉积和光刻图案化的一系列薄膜。写入头包括垂直磁写入极(WP),并且还可以包括后屏蔽件和/或侧屏蔽件(未示出)。
读/写头24的读取头部分被描绘为堆叠多个CPP-MR读取头的传感器结构或在具有TDMR的磁盘驱动器中使用的传感器100、200。在此示例中,读取传感器100、200两者利用沿磁道或“向下磁道”间隔“d”基本上彼此对准(在图3中竖直地),以便于读取具有磁道宽度TW的相同数据磁道。传感器可以不精确地对准,但可以在跨磁道方向上彼此具有轻微有意偏置,以补偿靠近磁盘ID和OD的大的趋肤效应。在一个应用中,可以对来自两个传感器100、200的回读信号进行处理,以使相同相对量的电子噪声的信号加倍,并由此增加信噪比(SNR),或使相同相对量的信号的传感器噪声减少,以由此增加信噪比(SNR)。下部读取传感器100位于两个磁屏蔽件(下部屏蔽件S1与下中部屏蔽件S3a)之间。上部读取传感器200也位于两个磁屏蔽件(上中部屏蔽件S3b与上屏蔽件S2)之间。由于下部屏蔽件S1、下中部屏蔽件S3a、上中部屏蔽件S3b和上部屏蔽件S2由磁可渗透的材料形成并且可以是导电的,因此这些屏蔽件可以用作读取传感器100和200的电引线。屏蔽件可以由用于常规磁屏蔽件的任何众所周知的材料(例如NiFe合金)形成,其中Ni以大于约40原子百分比的量存在于NiFe合金中。另选地,可以使用其他软铁磁材料,如NiFeCr、NiFeMo、CoZrTa、CoZrNb和CoFeZr合金。绝缘材料(例如氧化铝)层分隔开下中部屏蔽件S3a和上中部屏蔽件S3b,使得两个传感器彼此电隔离。屏蔽件的功能是从记录数据位屏蔽读取传感器100和200,该记录数据位靠近正被读取的数据位。通常,相比于沿磁道方向的每个读取传感器100、200的总厚度(其可以在约20nm至100nm的范围内),下部屏蔽件S1和上部屏蔽件S2分别各自可以在沿磁道方向上为最高至几微米厚。
图4是根据现有技术的如将从磁盘观察的GBS的视图,其示出了构成具有两个SFL传感器的一种类型的堆叠CPP-MR传感器结构的层。下部传感器100与上部传感器200大致对准或轻微偏置,使得两个传感器可以读取相同数据磁道。图4描绘了用于TDMR的堆叠CPP-MR传感器结构的简化示例,并且不示出此类结构(例如US 9,042,059 B1中所示和描述的结构,其被分配给与本申请相同的受让人)的若干变型的所有细节。
下部传感器100位于底部屏蔽件S1与下中部屏蔽件S3a之间,该底部屏蔽件位于滑块衬底上,即滑块22的后表面25上(参见图3)。传感器100层包括:参考或固定的铁磁层120,该层具有与GBS正交定向的固定磁矩或磁化121(进入页面);自由铁磁层110,该层具有平行于GBS的磁矩或磁化111,其可以响应于来自磁盘的横向外部磁场而在层110的平面中旋转;和非磁隔层130,该层位于固定层120与自由层110之间。CPP-MR传感器100可以是CPP GMR传感器,在这种情况下,非磁隔层130将由导电材料(通常是金属如Cu或Ag)或金属合金形成。另选地,CPP-MR传感器100可以是CPP隧穿MR(CPP-TMR)传感器,在这种情况下,非磁隔层130将是由电绝缘材料(如TiO2、MgO或Al2O3)形成的隧道势垒。固定层120可以通过交换耦合到反铁磁(AF)层124而具有其固定的磁化。AF层124通常是Mn合金,例如PtMn、NiMn、FeMn、IrMn、PdMn、PtPdMn或RhMn。位于自由铁磁层110上方的非磁封盖层112可以是单层或多层不同材料(诸如Ru、Ta和Ti),该自由铁磁层提供了腐蚀保护,并且调整了自由层110和下中部屏蔽件S3a之间的间隔。
在感兴趣范围内的外部磁场(即,来自磁盘上记录数据的磁场)的存在下,自由层110的磁化111将旋转,而固定层120的磁化121将保持固定且不旋转。因此,当从顶部屏蔽件垂直穿过传感器100层施加感测电流时,来自磁盘上记录数据的磁场将引起自由层磁化111相对于固定层磁化121的旋转,这可检测为电阻的变化。
制造CPP-MR传感器100的结构、功能和方法是众所周知的,并由此不在本申请中详细描述。具有对应200系列编号项目的上部传感器200在结构上和功能上与传感器100基本相同。
纵向偏置层160、161在传感器100的外部形成、靠近传感器100的侧边缘、特别是靠近自由层110的侧边缘,以纵向偏置自由层110的磁化111。偏置层160、161分别具有磁化162、163,并由此纵向偏置自由层110的磁化111。晶种层170、171位于偏置层160、161下方,并且绝缘层180、181位于晶种层170、171下方。偏置层160、161通过电绝缘层180、181与传感器100的侧边缘电绝缘,该电绝缘层通常由氧化铝、氮化硅(SiNx)或另一种金属氧化物(如Ta氧化物或Ti氧化物或MgO)形成。偏置层160、161可以由硬磁材料形成,但更通常地由“软”磁材料形成(其意味着可在低磁场下容易地磁化和去磁化的材料),以便于用作软侧屏蔽件。侧屏蔽件可以由用于常规磁屏蔽件的任何众所周知的材料形成。如果偏置层160、161是软侧屏蔽件,则反铁磁材料(未示出)可以与软侧屏蔽件相邻使用,以使软侧屏蔽件偏置层160、161的磁化162、163稳定。
上部传感器200位于上中部屏蔽件S3b与上屏蔽件S2之间,并且通过可由例如氧化铝或Ti氧化物形成的非磁绝缘分隔层250与下部传感器100分隔和磁隔离。上部传感器200包括具有磁化262、263的偏置层260、261和绝缘层280、281。偏置层260、261可以具有如先前针对侧偏置层160、161描述的相同结构、组成和功能。
作为本发明的实施方案的开发的一部分,已经发现,由于所需制造过程,下部传感器100在回读信号中产生基本上较低的信噪比(SNR)。由于需要提供连接到下中部屏蔽件S3a和上中部屏蔽件S3b的电引线,因此这些层必须比传感器结构延伸得更宽且更长,这防止两个传感器同时被图案化。相反,将构成下部传感器100的层沉积为全膜,并且然后执行全膜级退火以设定固定层120的磁化121。对全膜进行光致抗蚀剂沉积以及图案化和铣削以限定传感器100的磁道宽度(TW),然后再填充以形成偏置层160、161,以及进一步铣削以限定由偏置层160、161的侧边缘限定的总宽度。然后,在下部传感器100上沉积下中部屏蔽件S3a、上中部屏蔽件S3b和分隔层250以具有超出偏置层160、161的边缘的宽度,这是因为必须进行电连接以提供到传感器的引线。在化学机械抛光或其他平面化步骤之后,将构成上部传感器200的层随后沉积为全膜,并且然后执行全膜级退火以设定固定层220的磁化221。然而,因为固定层120已经被图案化到期望的尺寸和其设定的磁化121,所以此第二退火步骤可以不利地影响固定层120的特性,以及损坏在其边缘处的下部传感器100。这可以导致下部传感器100的SNR减小。
测量如上所述制造的具有两个堆叠SFL传感器的TDMR传感器结构以用于SNR。在TW为31nm的结构的一个示例中,下部传感器产生比上部传感器的SNR低2dB的回读信号的SNR。在TW为33nm的结构的第二示例中,下部传感器产生比上部传感器的SNR低1dB的回读信号的SNR。
作为本发明的实施方案的开发的一部分,制造具有两个DFL传感器的堆叠CPP-MR传感器结构。图5是描绘GBS的边缘的结构的侧视截面图。下部传感器300(DFL1)沿着与上部传感器400(DFL2)相同的TW大致对准,使得两个传感器读取相同数据磁道。两个传感器可以在跨磁道方向上彼此具有有意偏置,以补偿传感器在旋转致动器使传感器在磁盘上的磁盘ID与OD之间移动时“趋肤”。上部DFL2传感器400位于上中部屏蔽件S3b与上部屏蔽件S2之间。上部DFL2传感器400通过可由氧化铝形成的非磁绝缘分隔层450与下部DFL1传感器300分隔和磁隔离。
下部DFL1传感器300位于底部屏蔽件S1与下中部屏蔽件S3a之间,该底部屏蔽件位于滑块衬底上,即,滑块22的后表面25上(参见图3),该下中部屏蔽件可以是与反铁磁层362接触的磁屏蔽层360的双层。下中部屏蔽件S3a和上中部屏蔽件S3b中的一者或两者可以分别包含反铁磁层,如层362、462。DFL1传感器300层包括由非磁隔层330分隔的第一和第二铁磁自由层310(FL1)和320(FL2)。此隔层330可以是非磁电绝缘势垒层如TiO2、MgO或Al2O3,或导电层如Cu、Au、Ag、Ru、Rh或Cr及其合金。自由层310、320位于(GBS)前边缘处,以便于感测来自磁盘的记录数据。DFL1传感器300包括从GBS凹入的后硬偏置层340,该后硬偏置层具有磁化341。在不存在硬偏置层340的情况下并且在不存在外部磁场的情况下,自由层310、320的磁化311、321由于静磁耦合而定向成反平行的。然而,硬偏置层340偏置磁化311、321远离反平行,使得磁化相对于彼此成非零角度。(在图5中的纸的平面中描绘了磁化311、321。然而,磁化311由此在纸外呈一定角度,并且磁化321在纸内成一定角度。磁化311、321的反平行对准不稳定且可以翻转。因此,合成的反铁磁体(SAF)软偏置结构(未示出,但在图7A中示出)加强反平行状态。在存在来自磁盘的记录数据的情况下,磁化311、321在剪刀效应中相对于另一个旋转,这导致可检测电阻的变化。如果隔层330是电绝缘势垒层,则传感器是CPP-TMR传感器,该CPP-TMR传感器基于电子隧穿势垒层330的自旋相关隧穿效应而操作。如果隔层330是导电隔层,则传感器是CPP-GMR传感器,并且电阻变化由自旋相关散射现象造成。硬偏置层340可以由Co/Pt多层形成,并且通过绝缘层(未示出)和非磁晶种层342与S1和自由层310、320分隔。
制造下部DFL1传感器300的结构、功能和方法是众所周知的,并由此不在本申请中详细描述。DFL传感器及其制造方法描述于US 9,076,468 B1中,其被转让给与本申请相同的受让人。具有对应400系列编号项目的上部DFL2传感器400在结构上和功能上与下部DFL1传感器300基本相同。
在制造图5中所示的结构之后,发现上部DFL2传感器400以及组合的TDMR具有降低的性能。这是在重新填充从形成硬偏置层440的自由层凹入的区域之前所需的铣削工艺的结果。图6A是描绘在下部DFL1传感器300已图案化之后、在下中部屏蔽件S3a、上中部屏蔽件S3b和分隔层已形成之后并且在构成上部DFL2传感器的层(层424、410、430、420和412)已沉积为全膜之后的结构的示意图。此时,光致抗蚀剂(PR)已沉积并图案化以限定自由层410、420的后边缘。然后执行由箭头480描绘的成角度的离子铣削,以将全膜的暴露部分优选地向下铣削到上中部屏蔽件S3b的层460,使得该区域可以回填晶种层442和硬偏置层440。然而,如图6B中所描绘,因为铣削需要以一定角度进行,所以还铣削了靠近后边缘490的一部分S3b,从而产生较薄的S3b。这将会由于屏蔽件较薄而导致上部DFL2传感器400的电阻较高。屏蔽件是传感器的电流路径的一部分,并且薄的屏蔽件将有助于引线电阻。期望具有较低电阻,较低电阻减少噪声,并由此增加来自传感器的回读信号的SNR。
测量如上所述制造的具有两个堆叠DFL传感器的TDMR传感器结构以用于SNR。如所预期的,由于变薄的中部屏蔽件电引线引起的电阻增加,因此下部DFL传感器表现出比上部DFL传感器稍高的SNR。然而,下部DFL传感器还表现出比两个SFL结构的下层大1dB至2dB的SNR,并与两个SFL结构的上部SFL传感器基本上相同的SNR。
由于发现如上所述的某些传感器中的不良SNR性能,本发明的实施方案是具有下部DFL传感器和上部SFL传感器的混合堆叠CPP-MR传感器结构。这在图7A和图7B中示出,该图7A是GBS的视图,其示出了如将从磁盘观察的构成堆叠CPP-MR传感器结构的层,该图7B是描绘GBS边缘的传感器结构的侧视截面图。下部DFL传感器类似于先前描述的DFL传感器300(图5)。上部SFL传感器类似于先前描述的SFL传感器200(图4)。图7A示出了用于下部DFL传感器300的自由层磁化311、321的纵向偏置的反平行耦合的软侧屏蔽件。具有反平行磁化381、383的磁软层380、382分别由APC层384分隔并且通过绝缘层390与S1绝缘。具有反平行磁化386、388的磁软层385、387分别由APC层389分隔并且通过绝缘层391与S1绝缘。磁化381、386偏置FL1层310的磁化311,并且磁化383、388偏置FL2层320的磁化321,并由此保持磁化免受翻转。用于DFL传感器的这种类型的软侧屏蔽件是众所周知的,并且有时被称为合成反铁磁(SAF)软侧屏蔽件。US 8,749,926 B1和US 9,076,468 B1两者均被转让给与本申请相同的受让人,此两者描述了用于DFL传感器的SAF软侧屏蔽件。
虽然已参考优选的实施方案具体示出并描述了本发明,但本领域的技术人员将理解,在不脱离本发明的实质和范围的情况下可在形式和细节上作出各种更改。因此,所公开的本发明被认为仅是示例性的,并且在范围上仅限于所附权利要求书中指定的范围。
Claims (14)
1.一种磁阻传感器结构,所述磁阻传感器结构用于感测来自磁记录介质上的数据磁道的磁记录数据,所述结构包括:
底部磁屏蔽件;
双自由层(DFL)磁阻传感器,所述DFL磁阻传感器位于所述底部磁屏蔽件上并且具有用于面向磁记录介质的前边缘,所述DFL传感器包括第一铁磁自由层和第二铁磁自由层、位于第一自由层与第二自由层之间的非磁隔层、以及从所述DFL传感器前边缘凹入的后铁磁偏置层,所述后铁磁偏置层用于偏置所述第一自由层和所述第二自由层的磁化以相对于彼此成非零角度;
第一中部磁屏蔽件,所述第一中部磁屏蔽件位于所述DFL传感器上;
非磁分隔层,所述非磁分隔层位于所述第一中部磁屏蔽件上;
第二中部磁屏蔽件,所述第二中部磁屏蔽件位于所述分隔层上;
单自由层(SFL)磁阻传感器,所述SFL磁阻传感器位于所述第二中部磁屏蔽件上并且具有用于面向磁记录介质的前边缘,所述SFL传感器包括具有大致平行于所述SFL传感器前边缘定向的磁化的铁磁自由层、具有大致正交于所述SFL传感器前边缘定向的磁化的固定铁磁层、以及位于所述自由层与所述固定铁磁层之间的非磁隔层;和
顶部磁屏蔽件,所述顶部磁屏蔽件位于所述SFL传感器上;并且
其中所述SFL传感器与用于感测来自相同数据磁道的数据的所述DFL传感器基本上对准。
2.根据权利要求1所述的传感器结构,其中所述DFL传感器是电流垂直于平面(CPP)的巨磁阻(GMR)传感器,并且所述非磁隔层由导电金属或金属合金形成。
3.根据权利要求1所述的传感器结构,其中所述DFL传感器是电流垂直于平面(CPP)的隧穿磁阻(TMR)传感器,并且所述隔层是由电绝缘材料形成的非磁势垒层。
4.根据权利要求1所述的传感器结构,其中所述SFL传感器是电流垂直于平面(CPP)的巨磁阻(GMR)传感器,并且所述非磁隔层由导电金属或金属合金形成。
5.根据权利要求1所述的传感器结构,其中所述SFL传感器是电流垂直于平面(CPP)的隧穿磁阻(TMR)传感器,并且所述非磁隔层由电绝缘材料形成。
6.根据权利要求1所述的传感器结构,其中所述DFL传感器进一步包括与所述传感器前边缘处的所述DFL自由层的每一侧相邻的磁可渗透材料的反平行耦合层的软侧屏蔽件,所述软侧屏蔽件用于偏置所述DFL自由层的所述磁化。
7.根据权利要求1所述的传感器结构,其中所述第一中部磁屏蔽件和所述第二中部磁屏蔽件中的至少一者包括磁可渗透层和反铁磁材料层。
8.一种二维磁记录(TDMR)磁盘驱动器,所述TDMR磁盘驱动器包括:
可旋转磁记录磁盘,所述可旋转磁记录磁盘具有多个圆形数据磁道;
滑块,所述滑块具有面向所述磁盘的气体轴承表面(GBS)和后表面,所述后表面与所述GBS基本上正交并且相对于所述数据磁道在大致跨磁道方向上延伸;
根据权利要求1所述的传感器结构,所述传感器结构支撑在所述滑块的所述后表面上;和
旋转致动器,所述旋转致动器连接到所述滑块,所述旋转致动器用于使所述滑块在所述磁盘上移动并且将所述DFL传感器和所述SFL传感器维持在数据磁道上。
9.一种磁记录磁盘驱动器滑块,所述磁记录磁盘驱动器滑块用于支撑读取头和写入头以读取和写入磁记录磁盘的磁道中的数据,所述滑块具有用于面向所述磁盘的气体轴承表面(GBS)和后表面,所述后表面与所述GBS基本上正交并且相对于所述磁盘的所述磁道在大致跨磁道方向上延伸,所述滑块包括:
第一磁屏蔽层,所述第一磁屏蔽层位于所述滑块的所述后表面上;
双自由层(DFL)磁阻读取头,所述DFL磁阻读取头位于所述第一磁屏蔽层上并且具有在所述GBS处在所述跨磁道方向上对准的前边缘,所述DFL读取头包括第一铁磁自由层和第二铁磁自由层、位于第一自由层与第二自由层之间的非磁隔层、在所述跨磁道方向上与所述第一自由层和所述第二自由层相邻的软磁偏置结构,每个软磁偏置结构包括由非磁反平行耦合层分隔的两个侧铁磁偏置层,所述两个侧铁磁偏置层用于在基本上跨磁道方向上偏置所述第一自由层和所述第二自由层的磁化、以及从所述GBS凹入的后铁磁偏置层,所述后铁磁偏置层用于偏置所述第一自由层和所述第二自由层的所述磁化以相对于彼此成非零角度;
第一中部磁屏蔽件,所述第一中部磁屏蔽件位于所述DFL读取头上;
非磁分隔层,所述非磁分隔层位于所述第一中部磁屏蔽件上;
第二中部磁屏蔽件,所述第二中部磁屏蔽件位于所述分隔层上;
单自由层(SFL)磁阻读取头,所述SFL磁阻读取头位于所述第二中部磁屏蔽件上并且具有在所述GBS处在所述跨磁道方向上对准的前边缘,所述SFL读取头在与所述跨磁道方向正交的沿磁道方向上与所述DFL读取头基本上对准,以便于从与所述DFL读取头相同的磁道读取数据,所述SFL读取头包括具有大致平行于所述SFL传感器前边缘定向的磁化的铁磁自由层、具有大致与所述GBS正交定向的磁化的固定铁磁层、位于所述自由层与所述固定铁磁层之间的非磁隔层、以及在所述跨磁道方向上与所述单自由层相邻的铁磁偏置层,所述铁磁偏置层用于在基本上所述跨磁道方向上偏置所述单自由层的所述磁化;和
第二磁屏蔽件,所述第二磁屏蔽件位于所述SFL读取头上。
10.根据权利要求9所述的滑块,其中所述DFL读取头的所述非磁隔层和所述SFL读取头的所述非磁隔层各自由导电金属或金属合金形成。
11.根据权利要求9所述的滑块,其中所述DFL读取头的所述非磁隔层和所述SFL读取头的所述非磁隔层各自是由电绝缘材料形成的非磁势垒层。
12.根据权利要求9所述的滑块,其中所述SFL读取头在所述跨磁道方向上与所述DFL读取头轻微偏置。
13.根据权利要求9所述的滑块,其中所述第一中部磁屏蔽件和所述第二中部磁屏蔽件中的至少一者包括磁可渗透材料层和反铁磁材料层。
14.一种二维磁记录(TDMR)磁盘驱动器,所述TDMR磁盘驱动器包括:
可旋转磁记录磁盘,所述可旋转磁记录磁盘具有多个圆形数据磁道;
根据权利要求9所述的滑块;和
旋转致动器,所述旋转致动器连接到所述滑块,所述旋转致动器用于使所述滑块在所述磁盘上移动并且将所述DFL读取头和所述SFL读取头维持在数据磁道上。
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