JP2004186440A5 - - Google Patents
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- Publication number
- JP2004186440A5 JP2004186440A5 JP2002351756A JP2002351756A JP2004186440A5 JP 2004186440 A5 JP2004186440 A5 JP 2004186440A5 JP 2002351756 A JP2002351756 A JP 2002351756A JP 2002351756 A JP2002351756 A JP 2002351756A JP 2004186440 A5 JP2004186440 A5 JP 2004186440A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- processing apparatus
- dielectric
- cooling
- cooling medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002826 coolant Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002351756A JP4136630B2 (ja) | 2002-12-03 | 2002-12-03 | プラズマ処理装置 |
| KR1020030086759A KR100593291B1 (ko) | 2002-12-03 | 2003-12-02 | 플라즈마 처리장치 및 방법 |
| US10/725,403 US7140321B2 (en) | 2002-12-03 | 2003-12-03 | Plasma processing apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002351756A JP4136630B2 (ja) | 2002-12-03 | 2002-12-03 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004186440A JP2004186440A (ja) | 2004-07-02 |
| JP2004186440A5 true JP2004186440A5 (enExample) | 2006-01-19 |
| JP4136630B2 JP4136630B2 (ja) | 2008-08-20 |
Family
ID=32588081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002351756A Expired - Fee Related JP4136630B2 (ja) | 2002-12-03 | 2002-12-03 | プラズマ処理装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7140321B2 (enExample) |
| JP (1) | JP4136630B2 (enExample) |
| KR (1) | KR100593291B1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4612786B2 (ja) * | 2003-03-03 | 2011-01-12 | キヤノン株式会社 | 有機電界効果型トランジスタの製造方法 |
| US7265377B2 (en) * | 2003-04-01 | 2007-09-04 | Canon Kabushiki Kaisha | Organic semiconductor device |
| JP2005079204A (ja) * | 2003-08-28 | 2005-03-24 | Canon Inc | 電界効果型トランジスタおよびその製造方法 |
| JP4401826B2 (ja) * | 2004-03-10 | 2010-01-20 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法 |
| JP4557755B2 (ja) * | 2004-03-11 | 2010-10-06 | キヤノン株式会社 | 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法 |
| JP4401836B2 (ja) * | 2004-03-24 | 2010-01-20 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法 |
| JP4731840B2 (ja) * | 2004-06-14 | 2011-07-27 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法 |
| US7511296B2 (en) | 2005-03-25 | 2009-03-31 | Canon Kabushiki Kaisha | Organic semiconductor device, field-effect transistor, and their manufacturing methods |
| JP2006294422A (ja) * | 2005-04-11 | 2006-10-26 | Tokyo Electron Ltd | プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法 |
| US7695999B2 (en) * | 2005-09-06 | 2010-04-13 | Canon Kabushiki Kaisha | Production method of semiconductor device |
| US7435989B2 (en) * | 2005-09-06 | 2008-10-14 | Canon Kabushiki Kaisha | Semiconductor device with layer containing polysiloxane compound |
| JP2008071500A (ja) * | 2006-09-12 | 2008-03-27 | Noritsu Koki Co Ltd | プラズマ発生装置およびそれを用いるワーク処理装置 |
| KR101119627B1 (ko) * | 2007-03-29 | 2012-03-07 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
| KR100856552B1 (ko) * | 2007-06-21 | 2008-09-04 | (주)아이씨디 | 플라즈마 처리 장치 |
| JP4793662B2 (ja) * | 2008-03-28 | 2011-10-12 | 独立行政法人産業技術総合研究所 | マイクロ波プラズマ処理装置 |
| US9390941B2 (en) | 2009-11-17 | 2016-07-12 | Hitachi High-Technologies Corporation | Sample processing apparatus, sample processing system, and method for processing sample |
| US9530656B2 (en) | 2011-10-07 | 2016-12-27 | Lam Research Corporation | Temperature control in RF chamber with heater and air amplifier |
| US9978565B2 (en) * | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
| JP6014661B2 (ja) * | 2012-05-25 | 2016-10-25 | 東京エレクトロン株式会社 | プラズマ処理装置、及びプラズマ処理方法 |
| US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
| TWI623960B (zh) * | 2013-03-27 | 2018-05-11 | 蘭姆研究公司 | 半導體製造設備及其處理方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02302507A (ja) * | 1989-05-16 | 1990-12-14 | Matsushita Electric Ind Co Ltd | 高周波焼却装置 |
| JPH08274067A (ja) | 1995-03-30 | 1996-10-18 | Hitachi Ltd | プラズマ発生装置 |
| US6059922A (en) | 1996-11-08 | 2000-05-09 | Kabushiki Kaisha Toshiba | Plasma processing apparatus and a plasma processing method |
| JPH10340892A (ja) | 1997-06-06 | 1998-12-22 | Sumitomo Metal Ind Ltd | プラズマ処理装置 |
| JP4053173B2 (ja) * | 1999-03-29 | 2008-02-27 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置及び方法 |
| JP2002134417A (ja) * | 2000-10-23 | 2002-05-10 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP3890258B2 (ja) * | 2001-05-28 | 2007-03-07 | キヤノン株式会社 | 電子源の製造方法、および、電子源の製造装置 |
-
2002
- 2002-12-03 JP JP2002351756A patent/JP4136630B2/ja not_active Expired - Fee Related
-
2003
- 2003-12-02 KR KR1020030086759A patent/KR100593291B1/ko not_active Expired - Fee Related
- 2003-12-03 US US10/725,403 patent/US7140321B2/en not_active Expired - Fee Related
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