KR100856552B1 - 플라즈마 처리 장치 - Google Patents
플라즈마 처리 장치 Download PDFInfo
- Publication number
- KR100856552B1 KR100856552B1 KR1020070061046A KR20070061046A KR100856552B1 KR 100856552 B1 KR100856552 B1 KR 100856552B1 KR 1020070061046 A KR1020070061046 A KR 1020070061046A KR 20070061046 A KR20070061046 A KR 20070061046A KR 100856552 B1 KR100856552 B1 KR 100856552B1
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- South Korea
- Prior art keywords
- plasma
- plasma processing
- processing apparatus
- lower electrode
- substrate
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- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 238000000926 separation method Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 12
- 230000006837 decompression Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 230000007423 decrease Effects 0.000 description 5
- 238000004380 ashing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (9)
- 플라즈마가 발생되는 내부공간을 정의하기 위한 감압 용기(210);상기 플라즈마를 발생하기 위한 플라즈마 발생기(220);상기 플라즈마 발생기(220) 아래에 위치하며 적어도 2개 이상의 유전판들(235)을 구비하는 상부 플레이트(230); 및상기 감압 용기(210) 내부에 위치하며 상기 유전판들(235)의 이격에 따른 온도불균일을 방지하기 위한 기판거치부(240)를 포함하는 플라즈마 처리 장치.
- 제 1항에 있어서, 상기 기판거치부(240)는,기판이 배치되는 하부 전극(242);상기 하부전극(242)의 온도불균일을 보상하기 위해 상기 유전판들(235)의 이격공간에 대응하도록 구비되는 가열부(246); 및상기 하부전극(242) 아래에 위치하는 기저부(244)를 포함하는 것을 특징으로 하는 플라즈마 처리 장치.
- 제 2항에 있어서, 상기 가열부(246)는 상기 하부 전극(242) 내에 위치하는 것을 특징으로 하는 플라즈마 처리 장치.
- 제 2항에 있어서, 상기 가열부(246)는 상기 기저부(244) 내에 위치하는 것을 특징으로 하는 플라즈마 처리 장치.
- 삭제
- 제2항에 있어서, 상기 가열부(246)는 별도로 구비된 가열전원공급부(270)에 의해 전력을 공급받는 것을 특징으로 하는 플라즈마 처리 장치.
- 플라즈마가 발생되는 내부공간을 정의하기 위한 감압 용기(210);상기 플라즈마를 발생하기 위한 플라즈마 발생기(220);상기 플라즈마 발생기(220) 아래에 위치하며 적어도 2개 이상의 유전판들(235)을 구비하고, 상기 유전판들(235)의 이격에 따른 온도 불균일을 방지하기 위한 상부 플레이트(230); 및상기 감압 용기(210) 내부에 위치하는 기판거치부(240)를 포함하는 플라즈마 처리 장치.
- 제 7항에 있어서, 상기 상부 플레이트(230)는 상기 기판거치부(240)의 온도불균일을 보상하기 위해 상기 유전판들(235)의 이격공간에 대응하도록 구비되는 가열부(246)를 포함하는 것을 특징으로 하는 플라즈마 처리 장치.
- 제 8항에 있어서, 상기 가열부(246)는 열 복사 장치인 것을 특징으로 하는 플라즈마 처리 장치.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070061046A KR100856552B1 (ko) | 2007-06-21 | 2007-06-21 | 플라즈마 처리 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070061046A KR100856552B1 (ko) | 2007-06-21 | 2007-06-21 | 플라즈마 처리 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100856552B1 true KR100856552B1 (ko) | 2008-09-04 |
Family
ID=40022415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070061046A Active KR100856552B1 (ko) | 2007-06-21 | 2007-06-21 | 플라즈마 처리 장치 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100856552B1 (ko) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030012630A (ko) * | 2001-08-02 | 2003-02-12 | 피.에스.케이.테크(주) | 램프가열을 이용한 반도체 웨이퍼 애싱장치 및 방법 |
| KR20040048838A (ko) * | 2002-12-03 | 2004-06-10 | 캐논 가부시끼가이샤 | 플라즈마 처리장치 및 방법 |
| KR20050109132A (ko) * | 2004-05-14 | 2005-11-17 | 삼성전자주식회사 | 반도체 애싱 장치 |
| KR20060053444A (ko) * | 2004-11-15 | 2006-05-22 | 삼성전자주식회사 | 기판 가공 장치 |
-
2007
- 2007-06-21 KR KR1020070061046A patent/KR100856552B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030012630A (ko) * | 2001-08-02 | 2003-02-12 | 피.에스.케이.테크(주) | 램프가열을 이용한 반도체 웨이퍼 애싱장치 및 방법 |
| KR20040048838A (ko) * | 2002-12-03 | 2004-06-10 | 캐논 가부시끼가이샤 | 플라즈마 처리장치 및 방법 |
| KR20050109132A (ko) * | 2004-05-14 | 2005-11-17 | 삼성전자주식회사 | 반도체 애싱 장치 |
| KR20060053444A (ko) * | 2004-11-15 | 2006-05-22 | 삼성전자주식회사 | 기판 가공 장치 |
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