201119518 六、發明說明 【發明所屬之技術領域】 本發明係關於利用微波使處理槽內產生電漿之電漿產 生裝置及電漿處理裝置，尤其在微波放電的放電開始時， 使欲產生電漿之空間確實發生放電的電漿產生裝置及電漿 處理裝置。 【先前技術】 近年來，使用電漿之材料製程技術有顯著發展，在半 導體或液晶顯示器等之製造工程中，實施如灰化、乾蝕 刻、薄膜堆疊、表面改質的各種電漿處理。因此，關於電 漿產生裝置，經常被要求高性能化。 其中，也因藉由微波放電之電漿產生裝置因對晶圓之 損傷較少，故需求高，被用於專利文獻〗或專利文獻2等 之先行技術。專利文獻1所記載之技術，爲自開槽天線照 射微波至至少包含氧原子或氫原子之製程氣體，在被處理 基板之晶圓的正上方生成電漿而除去被處理基板表面之光 阻的方法。 記載於專利文獻2之下向流蝕刻裝置中，藉由噴淋頭 之屏蔽作用遮蔽微波，依此僅使在電漿產生部產生的電漿 中之自由基流入蝕刻部，並藉由該自由基執行等向性之蝕 刻。再者，專利文獻2之技術爲在氧電漿產生部產生氧電 漿，對蝕刻室內之反應生成物照射氧電漿，除去該反應生 成物。 -5- 201119518 針對適用於如此之技術的電漿產生裝置，參照第5圖 予以具體說明。第5圖爲一般灰化裝置所採用之電漿產生 裝置之模式圖。如第5圖所示般，設置有爲處理槽之灰化 腔室5，在其上部裝設有導波管2。在導波管2之端部配 置有使微波振盪之磁控管1。 再者，在導波管2之下面部形成有開槽天線3，在 其下方設置有石英製之微波透過窗4。並且，在微波透過 窗4之左右端部，設置有用以將製程氣體11導入至灰化 腔室5內部之氣體導入口 8。 在灰化腔室5之內部設置有試料台7，在該試料台7 上載置有在表面具有光阻之晶圓6。再者，在試料台7之 下面裝設有回形之加熱器台1〇。並且，試料台也有包含 加熱器台而稱呼之情形。並且，在灰化腔室5之底部附近 形成有排氣口 9。 在具有以上構成之電發產生裝置中，當磁控管1振還 微波時，導波管2引導微波，自開槽天線3朝向微波透過 窗4放射微波。 此時，因自排氣口 9排出灰化腔室5之氣體，並且經 氣體導入口 8導入製程氣體1 1，故自開槽天線3放射之 微波激發製程氣體11而生成電漿12(以虛線表示）。再 者，因使用加熱器台10加熱保持晶圓6，故可以效率佳 除去晶圓6表面之光阻。 先行技術文獻 專利文獻 -6- 201119518 專利文獻1:日本特開2002_158210號公報 專利文獻2 :日本特開7- 1 307 1 3號公報 【發明內容】 [發明槪要] [發明所欲解決之課題] 但是，上述般之以往的電漿產生裝置存在有下述課 題。即是，在使用微波之電漿產生裝置中，於以低壓開始 放電之時，難以在欲發生放電之被處理基板上方蓄積微 波’故在被處理基板上方之空間引起難以開始放電之現 象。 放電之開始係指藉由電場被加速之電子與中性粒子衝 突’依此電離滋生而氣體電漿化，且放電成爲持續狀態之 情形。因使用微波電場之時通常無電極，故處理槽之壁面 等成爲二次電子之釋放源而產生放電開始。 當以第5圖所示之電漿產生裝置爲例時，載置有晶圓 6之試料台7之下方空間或灰化腔室5之壁面部附近則大 於能成爲二次電子釋放源之壁面部的面積，二次電子釋放 量變多。因此，在該些空間開始放電之確率變高。 即是’放電開始並非欲產生放電之晶圓6之上方空 間’擴大至其他空間，原本不需要電漿1 2之空間產生異 常放電13。於產生如此異常放電13之時，白白地增大用 以產生晶圓6之電漿處理所需之電漿12的消耗電力。 尤其’產生在從加熱器台1 〇之下面到其腳部份之空 201119518 間的異常放電13，無助於晶圓6上方之電漿12產生，只 是對加熱器台1 0下面或其腳部份造成損傷而已，抑制此 則成當務之急》 就以解決上述問題之手法而言，雖然考慮提高製程氣 體之壓力，但需要於放電安定後使製程氣體再次回到低壓 力之工程。因此，增加製程氣體之壓力調整作業，僅該部 分則使處理時間長期化。 再者，也知悉有爲了防止異常放電13之產生，設置 輝光燈等之觸發放電部以當作二次性之輔助機器的技術。 但是，必須特別設置僅於放電開始時使用之構件。因此， 也增加維修對象構件，期望構成之簡化》 如上述般，在使用微波之電漿產生裝置，或使用其產 生裝置之電漿處理裝置中，在低壓下放電開始時，難以在 所欲之空間產生放電。在此，雖然考慮有提高電漿氣體之 壓力，設置觸發電部，但是該些技術產生有處理時間之長 期化或構成之複雜化的新問題。 本發明係爲了解決上述課題而提案出，其目的在於提 供可以迴避處理時間之長期化或構成之複雜化，並且藉由 極簡單之構成抑制異常放電之產生，能在適當空間確實產 生電漿的信賴性優良之電漿產生裝置及電漿處理裝置。 [用以解決課題之手段] 爲了達成上述目的，本發明之電漿產生裝置係屬於將 製程氣體及微波導入收納被處理基板之處理槽內使產生電 漿的電漿產生裝置，其特徵爲：在上述處理槽於較上述被 -8 - 201119518 處理基板下方配置有微波阻斷材。再者，爲了達成上述目 的，本發明之電漿處理裝置係以使用上述電漿產生裝置爲 特徵。 [發明效果] 若藉由本發明之電漿產生裝置及電漿處理裝置時，藉 由將微波阻斷材設置在較被處理基板下方的極簡單構成， 可以防止在被處理基板之下方空間產生異常放電，並即使 在低壓環境下之微波放電的放電開始時，於被處理基板上 方亦容易產生放電，大幅度提升信賴性。 【實施方式】 以下，針對本發明所涉及之電漿產生裝置之代表性實 施型態，參照第1至第3圖予以具體性說明。第1圖及第 3圖爲本實施型態之模式圖，第2圖爲本實施型態之重要 部位俯視圖。並且，本實施型態與第5圖所示之以往例相 同’爲適用於灰化裝置，關於與第5圖所示之以往例相同 之構成，賦予相同符號，省略說明。 (1)代表性之實施型態 [構成] 如第1及第3圖所示般，本實施型態係在較被載置於 試料台7之晶圓6下方配置有微波阻斷板〗4之點具有特 徵。微波阻斷板14係由上面板14a、對該上面板14a垂 直配設之側面板1 4b所構成。 -9 - 201119518 在此，微波阻斷板14構成本發明之微波阻斷材。然 後’微波阻斷板14之上面板14a之形狀構成環狀，其內 徑被形成大略與加熱器台1 0之外徑相等，或是些許大， 外徑被形成大略與灰化腔室5之側壁部之內徑（第1圖之 左右方向之尺寸）相等，或些許小。 即是，微波阻斷板14之上面板14a可以在試料台7 之周圍和灰化腔室5側壁之空間上下移動，被設爲在試料 台7、灰化腔室5之側壁之間具有微波無法通過（例如小 於微波波長之W4)之間隙的尺寸。 在微波阻斷板14之上面板14a於全周多數形成有較 微波波長1/4小徑的穴部15(參照第2圖）。再者，穴部15 之總面積係被設爲足以在灰化腔室5內流暢排氣的大小。 並且，微波因持有透過絕緣體之性質，故微波阻斷板 1 4之材質以反射微波之金屬系的材質爲佳。微波阻斷板 14之側面板14b係被設置成對對於自試料台7(在本實施 型態中自與試料台7爲一體的加熱器台1 0)延伸於水平方 向之多根（例如4根）之支撐臂1 6上下移動自如。微波阻 斷板14通常位於上升之位置（第1圖之狀態），於實施試 料台7下方之維修等時，則移動至下降位置（第3圖之狀 態）。 在此，微波阻斷板14之上升時，其上面位準，即是 在本實施型態中，上面板14a之上面位準被設爲幾乎與試 料台7之上面位準幾乎一致的高度。即是，微波阻斷板 14係在其上升端，上面板14a被配置在較載置於試料台7 -10- 201119518 上之晶圓6下方。並且’微波阻斷板14對支撐臂16朝上 下方向之移動係藉由無圖示之馬達或汽缸等之驅動機構進 行。 [作用效果] 具有以上構成之本實施型態之作用效果如同下述般。 即是，因將微波阻斷板1 4設置成掩埋試料台7之周圍和 灰化腔室5側壁之空間，且配置在較晶圓6下方，故自磁 控管1、導波管2、開槽天線3、微波透過窗4所構成之 微波供給手段供給之微波，不到達至晶圓6之下方空間。 更詳細而言，設置在微波阻斷板1 4之上面板Ha之穴部 1 5之直徑尺寸，小於微波波長之1/4，微波不通過此。 再者，上面板14a之穴部15之總面積爲足以自排氣 口 9排出灰化腔室5內之製程氣體11的大小，而且形成 在整個上面板14a之全周。因此，將微波阻斷板14設置 在灰化腔室5內，依此不會阻斷製程氣體11之流動，可 均勻排出製程氣體11。 如上述般，若藉由本實施型態時，藉由配置微波阻斷 板1 4，可以防止微波到達至晶圓6之下方空間’並可以 確實防止異常放電1 3之產生。因此，可以在晶圓6上方 之空間容易產生放電開始。 因此，不會增大消耗電力，可以在適當空間實現電漿 產生，有助於提升信賴性。此時，因不需提高製程氣體 11之壓力，可以省下製程氣體11之壓力調整作業，故不 -11 - 201119518 會產生如處理時間長期化之不良狀況。 並且，因也不需要輝光燈等之觸發放電部，故有可以 簡化構成之優點。而且，微波阻斷板14因上下移動自 如，故藉由使移動至下降位置，則可以容易實施試料台7 下方之維修等。 再者，藉由在較晶圓6下方配置微波阻斷板14，可 以在較晶圓6附近引起電漿放電。依此。可以期待有助於 放電熱上升至處理所需之晶圓6之溫度的效果。 (2)其他之實施型態 在上述實施型態中，經支撐臂16對試料台7上下配 置微波阻斷板1 4。但是，即使將微波阻斷板1 4以可以直 接上下移動之方式配置在灰化腔室5之底部亦可。此時不 需要支撐臂1 6。 在所謂達成防止異常放電之點中，並不特別需要微波 阻斷板14之上下移動。此時，即使以微波阻斷板14之上 面板14a之上面位準幾乎與試料台7之上面位準一致之高 度固定配置在灰化腔室5之底部或側壁部亦可。於將微波 阻斷板14固定配置在灰化腔室5之側壁部之時，則不需 要側面板1 4 b。 即使在形成在微波阻斷板1 4之上面板1 4 a的穴部1 5 中，若微波被阻斷，穴之列數則不限定於一列，即使爲多 數列配置亦可。並且，本發明並不限定於上述實施型態， 可適當變更各構件之形狀或尺寸、材質等》 具體而言，即使將微波阻斷板14設置成對加熱器台 -12- 201119518 1 〇裝卸自如亦可。此時，例如將側面板】4b設爲棒狀之 形態，在支撐臂1 6之端部加工陰螺紋，在側面板1 4b之 一方之端部加工對應於支撐臂16之內螺紋的陽螺紋，在 側面板1 4b之另一方端部加工陰螺紋，並在與上面板1 4a 之周緣之側面板1 4b接觸的部分開口穴。然後，於將微波 阻斷板1 4裝設於加熱器台1 〇之時，藉由側面板〗4b螺旋 於支提臂16’接合支擦臂16和側面板14b，蓋上上面板 1 4 a而予以螺緊。於拆下時，執行相反之操作。 如第4圖所示般’即使微波阻斷板1 4之側面丨4b之 設置處並非如第1圖所示之灰化腔室5之側面部側，而係 設爲試料台7側（加熱器台1 〇側）亦可。如此一來，可以 縮短支撐臂1 6，並可以達成零件之小型化。 此時’即使與上述實施型態相同，將微波阻斷板！ 4 之側面板1 4b ’直接配置成經馬達或汽缸等之驅動機構而 對自試料台7延伸於水平方向之支撐臂16上下移動自 如’或不特別設置支撐臂16可在灰化腔室5之底部上下 移動亦可’又即使上面板14a之上面位準以與試料台7之 上面位準幾乎一致之高度固定配置於灰化腔室5之底部或 側壁部亦可。 在上述中之任一實施型態中，作爲微波阻斷板14之 上升端中的或被固定配置的微波阻斷板14之上面位準之 最佳筒度，係設爲幾乎與試料台7之上面位準幾乎—致之 局度。但是’微波阻斷板1 4之該上面位準即使較試料台 7之上面位準下方亦可。但是，必須要設定在較如在課題 -13- 201119518 中所述於試料台7之下方空間產生異常放電之界限高的位 置。其限界位置係藉由灰化腔室5之內壓、微波之密度、 蝕刻氣體之種類等而變化。 即使上述中之任一實施型態中，構成用以構成微波阻 斷材之微波阻斷板1 4的側面板1 4 b之形狀並非板，而係 棒狀亦可。當構成如此之時，則可以達成零件之小型化。 並且，在上述實施形態中，雖以灰化處理爲例而予以說 明，但是本發明若爲蝕刻裝置、薄膜堆積裝置、表面處理 裝置、電漿摻雜裝置等，使用電漿產生裝置之處理裝置， 則可以適用。再者，雖然被處理基板例示晶圓，但並不限 定於此，若爲以電漿處理之基板則可適用。 【圖式簡單說明】 第1圖爲本發明所涉及之代表性之實施型態的模式 圖。 第2圖爲本實施型態之重要部位俯視圖。 第3圖爲本發明所涉及之代表性之實施型態的模式 圖。 第4圖爲本發明所涉及之其他實施型態的模式圖。 第5圖爲一般灰化裝置之模式圖。 【主要元件符號說明】 1 :磁控管 2 :導波管 -14- 201119518 3 :開槽天線 4 :微波透過窗 5 :灰化腔室 6 :晶圓 7 :試料台 8 :氣體導入口 9 :排氣口 1 0 :加熱器台 1 1 :製程氣體 1 2 :電漿 1 3 :異常放電 1 4 :微波阻斷板 1 4 a :上面板 14b :側面板 15 :穴部 1 6 :支撐臂 -15201119518 VI. Description of the Invention [Technical Field] The present invention relates to a plasma generating device and a plasma processing device for generating plasma in a processing tank by using microwaves, in particular, at the beginning of discharge of microwave discharge, to generate plasma The plasma generating device and the plasma processing device in which the space does occur discharge. [Prior Art] In recent years, material processing techniques using plasma have been remarkably developed, and various plasma treatments such as ashing, dry etching, film stacking, and surface modification have been carried out in manufacturing processes such as semiconductors or liquid crystal displays. Therefore, regarding the plasma generating apparatus, high performance is often required. Among them, the plasma generating apparatus by microwave discharge has a high demand due to less damage to the wafer, and is used in the prior art such as Patent Document or Patent Document 2. According to the technique described in Patent Document 1, a microwave is irradiated from a slotted antenna to a process gas containing at least an oxygen atom or a hydrogen atom, and a plasma is generated directly above the wafer of the substrate to be processed to remove the photoresist on the surface of the substrate to be processed. method. According to Patent Document 2, in the flow etching apparatus, the microwave is shielded by the masking action of the shower head, whereby only the radicals in the plasma generated in the plasma generating portion flow into the etching portion, and the freedom is thereby The base performs an isotropic etching. Further, in the technique of Patent Document 2, an oxygen plasma is generated in an oxygen plasma generating portion, and an oxygen plasma is irradiated to the reaction product in the etching chamber to remove the reaction product. -5- 201119518 A plasma generating apparatus suitable for such a technique will be specifically described with reference to Fig. 5. Figure 5 is a schematic view of a plasma generating apparatus used in a general ashing apparatus. As shown in Fig. 5, an ashing chamber 5 as a processing tank is provided, and a waveguide 2 is mounted on the upper portion thereof. At the end of the waveguide 2, a magnetron 1 for oscillating the microwave is disposed. Further, a slotted antenna 3 is formed on the lower surface of the waveguide 2, and a microwave-transmissive window 4 made of quartz is provided below the waveguide. Further, at the left and right end portions of the microwave transmission window 4, a gas introduction port 8 for introducing the process gas 11 into the interior of the ashing chamber 5 is provided. A sample stage 7 is disposed inside the ashing chamber 5, and a wafer 6 having a photoresist on its surface is placed on the sample stage 7. Further, a return heater stage 1 is mounted under the sample stage 7. In addition, the sample stage also has a name including a heater stage. Further, an exhaust port 9 is formed near the bottom of the ashing chamber 5. In the electric hair generating device having the above configuration, when the magnetron 1 vibrates the microwave, the waveguide 2 guides the microwave, and the microwave is radiated from the slotted antenna 3 toward the microwave transmitting window 4. At this time, since the gas of the ashing chamber 5 is discharged from the exhaust port 9, and the process gas 1 is introduced through the gas introduction port 8, the microwave radiated from the slotted antenna 3 excites the process gas 11 to generate the plasma 12 ( The dotted line indicates). Further, since the wafer 6 is heated and held by the heater stage 10, the photoresist of the surface of the wafer 6 can be removed efficiently. Japanese Unexamined Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. However, the conventional plasma generating apparatus described above has the following problems. In other words, in the plasma generating apparatus using microwaves, it is difficult to accumulate microwaves above the substrate to be processed when the discharge is started at a low voltage, so that it is difficult to start the discharge in the space above the substrate to be processed. The beginning of the discharge means that the electrons accelerated by the electric field collide with the neutral particles. The ionization is induced by the ionization, and the gas is plasmatized, and the discharge becomes a continuous state. Since there is usually no electrode when a microwave electric field is used, the wall surface of the treatment tank or the like becomes a discharge source of secondary electrons, and discharge starts. When the plasma generating apparatus shown in Fig. 5 is taken as an example, the space below the sample stage 7 on which the wafer 6 is placed or the vicinity of the wall surface of the ashing chamber 5 is larger than the wall surface which can serve as a secondary electron emission source. The area of the part, the amount of secondary electron emission increased. Therefore, the probability of starting discharge in these spaces becomes high. That is, the space above the wafer 6 where the discharge is not to be generated is expanded to another space, and the space of the plasma 12 is not required to generate the abnormal discharge 13 originally. When such an abnormal discharge 13 is generated, the power consumption of the plasma 12 required for the plasma processing of the wafer 6 is increased arbitrarily. In particular, the abnormal discharge 13 generated between the bottom of the heater stage 1 and the foot portion of the heater is not helpful to the plasma 12 above the wafer 6, but only to the heater table 10 or its feet. Partly causing damage, and suppressing this is a matter of urgency. In terms of solving the above problems, although it is considered to increase the pressure of the process gas, it is necessary to return the process gas to the low pressure after the discharge is stabilized. Therefore, the pressure adjustment operation of the process gas is increased, and only this portion lengthens the processing time. Further, in order to prevent the occurrence of the abnormal discharge 13, a trigger discharge portion such as a glow lamp is provided as a secondary auxiliary device. However, it is necessary to specially set the member to be used only at the start of discharge. Therefore, the member to be repaired is also added, and the simplification of the configuration is desired. As described above, in the plasma processing apparatus using the microwave or the plasma processing apparatus using the generating apparatus, it is difficult to discharge at the beginning of discharge at a low pressure. The space generates a discharge. Here, although it is considered to increase the pressure of the plasma gas and to provide the triggering electric portion, these techniques have a new problem of delaying the processing time or complication of the configuration. The present invention has been made to solve the above problems, and an object of the present invention is to provide a process that can avoid the long-term processing time or the complication of the configuration, and can suppress the occurrence of abnormal discharge by an extremely simple configuration, and can reliably generate plasma in an appropriate space. A plasma generating device and a plasma processing device with excellent reliability. [Means for Solving the Problem] In order to achieve the above object, a plasma generating apparatus according to the present invention is a plasma generating apparatus which introduces a process gas and a microwave into a processing tank for accommodating a substrate to be processed to generate plasma, and is characterized in that: A microwave blocking material is disposed in the processing tank below the -8 - 201119518 processing substrate. Further, in order to achieve the above object, the plasma processing apparatus of the present invention is characterized by using the above plasma generating apparatus. [Effect of the Invention] According to the plasma generating apparatus and the plasma processing apparatus of the present invention, by providing the microwave blocking material in a very simple configuration below the substrate to be processed, it is possible to prevent an abnormality in the space below the substrate to be processed. Discharge, and even when the discharge of the microwave discharge in a low-pressure environment is started, discharge is likely to occur above the substrate to be processed, and the reliability is greatly improved. [Embodiment] Hereinafter, a representative embodiment of a plasma generating apparatus according to the present invention will be specifically described with reference to Figs. 1 to 3 . Fig. 1 and Fig. 3 are schematic views of the present embodiment, and Fig. 2 is a plan view of an important part of the embodiment. In the present embodiment, the same as the conventional example shown in Fig. 5 is applied to the ashing apparatus, and the same components as those in the conventional example shown in Fig. 5 are denoted by the same reference numerals, and the description thereof will be omitted. (1) Representative Embodiment Pattern [Configuration] As shown in Figs. 1 and 3, in the present embodiment, a microwave blocking plate is disposed below the wafer 6 placed on the sample stage 7. The point has characteristics. The microwave blocking plate 14 is composed of an upper panel 14a and side panels 14b that are vertically disposed on the upper panel 14a. -9 - 201119518 Here, the microwave blocking plate 14 constitutes the microwave blocking material of the present invention. Then, the shape of the upper panel 14a of the microwave blocking plate 14 is formed into a ring shape, and the inner diameter thereof is formed to be substantially equal to the outer diameter of the heater stage 10, or is somewhat large, and the outer diameter is formed to substantially enlarge the ashing chamber 5. The inner diameter of the side wall portion (the dimension in the left-right direction of Fig. 1) is equal or slightly small. That is, the upper panel 14a of the microwave blocking plate 14 can be moved up and down around the sample stage 7 and the space of the side wall of the ashing chamber 5, and is provided with microwaves between the sample stage 7 and the side walls of the ashing chamber 5. The size of the gap (eg, less than W4 of the microwave wavelength) cannot be passed. On the upper surface 14a of the microwave blocking plate 14, a plurality of hole portions 15 having a diameter smaller than 1/4 of the microwave wavelength are formed on the entire circumference (see Fig. 2). Furthermore, the total area of the pockets 15 is set to a size sufficient to ventilate smoothly within the ashing chamber 5. Further, since the microwave has a property of transmitting the insulator, the material of the microwave blocking plate 14 is preferably a metal material which reflects the microwave. The side panel 14b of the microwave blocking plate 14 is provided to extend a plurality of horizontal directions (for example, 4) for the self-test stage 7 (in the present embodiment, the heater stage 10 integrated from the sample stage 7). The support arm of the root) moves freely up and down. The microwave blocking plate 14 is usually located at the rising position (the state of Fig. 1), and moves to the lowered position (the state of Fig. 3) when the maintenance is performed under the sample stage 7. Here, when the microwave blocking plate 14 is raised, the upper surface thereof is leveled, that is, in the present embodiment, the upper surface of the upper panel 14a is set to a height almost coincident with the upper level of the sample stage 7. That is, the microwave blocking plate 14 is at its rising end, and the upper panel 14a is disposed below the wafer 6 placed on the sample stage 7-10-201119518. Further, the movement of the microwave blocking plate 14 in the upward and downward directions of the support arm 16 is performed by a drive mechanism such as a motor or a cylinder (not shown). [Effects and Effects] The effects of the present embodiment having the above configuration are as follows. That is, since the microwave blocking plate 14 is disposed to bury the space around the sample stage 7 and the space of the side wall of the ashing chamber 5, and is disposed below the wafer 6, the magnetron 1 and the waveguide 2 are The microwave supplied by the microwave supply means formed by the slotted antenna 3 and the microwave transmission window 4 does not reach the space below the wafer 6. More specifically, the diameter of the hole portion 15 of the panel Ha disposed on the microwave blocking plate 14 is smaller than 1/4 of the wavelength of the microwave, and the microwave does not pass therethrough. Further, the total area of the pocket portion 15 of the upper panel 14a is a size sufficient to discharge the process gas 11 from the exhaust port 9 into the ashing chamber 5, and is formed over the entire circumference of the entire upper panel 14a. Therefore, the microwave blocking plate 14 is disposed in the ashing chamber 5, whereby the flow of the process gas 11 is not blocked, and the process gas 11 can be uniformly discharged. As described above, according to the present embodiment, by arranging the microwave blocking plate 14, it is possible to prevent the microwave from reaching the space below the wafer 6, and it is possible to surely prevent the occurrence of the abnormal discharge 13. Therefore, it is possible to easily start the discharge in the space above the wafer 6. Therefore, power consumption is not increased, plasma generation can be achieved in an appropriate space, and reliability can be improved. At this time, since it is not necessary to increase the pressure of the process gas 11, the pressure adjustment operation of the process gas 11 can be saved, so that -11 - 201119518 may cause a problem such as long-term processing time. Further, since the trigger discharge portion such as a glow lamp is not required, the advantage of the configuration can be simplified. Further, since the microwave blocking plate 14 can be moved up and down, it is possible to easily perform maintenance or the like under the sample stage 7 by moving to the lowered position. Furthermore, by arranging the microwave blocking plate 14 below the wafer 6, it is possible to cause plasma discharge in the vicinity of the wafer 6. According to this. An effect that contributes to the rise of the discharge heat to the temperature of the wafer 6 required for the treatment can be expected. (2) Other Embodiments In the above embodiment, the microwave blocking plate 14 is disposed above and below the sample stage 7 via the support arm 16. However, even if the microwave blocking plate 14 is disposed at the bottom of the ashing chamber 5 so as to be vertically movable up and down. The support arm 16 is not required at this time. In the point where the prevention of abnormal discharge is achieved, the movement of the microwave blocking plate 14 up and down is not particularly required. At this time, even if the upper surface of the upper surface of the panel 14a of the microwave blocking plate 14 is almost fixed to the bottom of the ashing chamber 5 or the side wall portion, the level of the upper surface of the upper surface of the sample stage 7 is fixed. When the microwave blocking plate 14 is fixedly disposed at the side wall portion of the ashing chamber 5, the side panel 14b is not required. Even in the hole portion 15 formed in the panel 14a of the microwave blocking plate 14, if the microwave is blocked, the number of holes is not limited to one column, and may be arranged in a plurality of columns. Further, the present invention is not limited to the above-described embodiment, and the shape, size, material, and the like of each member can be appropriately changed. Specifically, even if the microwave blocking plate 14 is provided to be mounted on the heater stage -12-201119518 1 Free. At this time, for example, the side panel 4b is formed in a rod shape, a female thread is machined at the end of the support arm 16 and a male thread corresponding to the internal thread of the support arm 16 is machined at one end of the side panel 14b. A female thread is machined at the other end of the side panel 14b, and a hole is opened at a portion in contact with the side panel 14b of the periphery of the upper panel 14a. Then, when the microwave blocking plate 14 is mounted on the heater stage 1, the support arm 16 and the side panel 14b are joined to the support arm 16' by the side panel 4b, and the upper panel 14 is covered. a and screwed tightly. When removed, perform the opposite operation. As shown in Fig. 4, even if the side surface 4b of the microwave blocking plate 14 is not disposed on the side of the side portion of the ashing chamber 5 as shown in Fig. 1, it is set to the side of the sample stage 7 (heating) The table 1 side can also be used. As a result, the support arm 16 can be shortened and the miniaturization of the parts can be achieved. At this time, even if it is the same as the above embodiment, the microwave blocking plate will be used! 4 The side panel 1 4b 'is directly arranged to move up and down the support arm 16 extending from the sample stage 7 in the horizontal direction via a driving mechanism such as a motor or a cylinder, etc. or the support arm 16 is not particularly provided in the ashing chamber 5 The bottom portion of the ashing chamber 5 may be fixedly disposed at the bottom or the side wall portion of the ashing chamber 5 at a height substantially equal to the upper level of the sample stage 7 even if the bottom portion of the upper panel 14a is positioned at the upper and lower positions. In any of the above embodiments, the optimum degree of the upper level of the microwave blocking plate 14 in the rising end of the microwave blocking plate 14 or fixedly disposed is set to be almost the same with the sample stage 7 The above level is almost the same. However, the upper level of the microwave blocking plate 14 may be lower than the upper level of the sample stage 7. However, it is necessary to set a position which is higher than the boundary where abnormal discharge occurs in the space below the sample stage 7 as described in the subject -13-201119518. The limit position is changed by the internal pressure of the ashing chamber 5, the density of the microwave, the type of the etching gas, and the like. In any of the above embodiments, the shape of the side panel 14b constituting the microwave blocking plate 14 for constituting the microwave blocking member is not a plate, but may be a rod shape. When this is the case, the miniaturization of the parts can be achieved. Further, in the above-described embodiment, the ashing treatment is taken as an example, but the present invention is an etching apparatus, a thin film deposition apparatus, a surface treatment apparatus, a plasma doping apparatus, or the like, and a processing apparatus using a plasma generating apparatus. , then it can be applied. Further, although the substrate to be processed is exemplified as a wafer, it is not limited thereto, and is applicable to a substrate treated by plasma. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a representative embodiment of the present invention. Fig. 2 is a plan view of an important part of the embodiment. Figure 3 is a schematic view of a representative embodiment of the present invention. Fig. 4 is a schematic view showing another embodiment of the present invention. Figure 5 is a schematic diagram of a general ashing apparatus. [Main component symbol description] 1 : Magnetron 2 : Waveguide 14- 201119518 3 : Slotted antenna 4 : Microwave transmission window 5 : Ashing chamber 6 : Wafer 7 : Sample stage 8 : Gas introduction port 9 : Exhaust port 1 0 : Heater stage 1 1 : Process gas 1 2 : Plasma 1 3 : Abnormal discharge 1 4 : Microwave blocking plate 1 4 a : Upper panel 14b: Side panel 15: Hole 1 6 : Support Arm-15