JP4136630B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4136630B2
JP4136630B2 JP2002351756A JP2002351756A JP4136630B2 JP 4136630 B2 JP4136630 B2 JP 4136630B2 JP 2002351756 A JP2002351756 A JP 2002351756A JP 2002351756 A JP2002351756 A JP 2002351756A JP 4136630 B2 JP4136630 B2 JP 4136630B2
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JP
Japan
Prior art keywords
dielectric
plasma processing
processing apparatus
temperature
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002351756A
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English (en)
Japanese (ja)
Other versions
JP2004186440A5 (enExample
JP2004186440A (ja
Inventor
富夫 中山
一道 倉持
純也 高橋
均 石浜
博久 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2002351756A priority Critical patent/JP4136630B2/ja
Priority to KR1020030086759A priority patent/KR100593291B1/ko
Priority to US10/725,403 priority patent/US7140321B2/en
Publication of JP2004186440A publication Critical patent/JP2004186440A/ja
Publication of JP2004186440A5 publication Critical patent/JP2004186440A5/ja
Application granted granted Critical
Publication of JP4136630B2 publication Critical patent/JP4136630B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2002351756A 2002-12-03 2002-12-03 プラズマ処理装置 Expired - Fee Related JP4136630B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002351756A JP4136630B2 (ja) 2002-12-03 2002-12-03 プラズマ処理装置
KR1020030086759A KR100593291B1 (ko) 2002-12-03 2003-12-02 플라즈마 처리장치 및 방법
US10/725,403 US7140321B2 (en) 2002-12-03 2003-12-03 Plasma processing apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002351756A JP4136630B2 (ja) 2002-12-03 2002-12-03 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2004186440A JP2004186440A (ja) 2004-07-02
JP2004186440A5 JP2004186440A5 (enExample) 2006-01-19
JP4136630B2 true JP4136630B2 (ja) 2008-08-20

Family

ID=32588081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002351756A Expired - Fee Related JP4136630B2 (ja) 2002-12-03 2002-12-03 プラズマ処理装置

Country Status (3)

Country Link
US (1) US7140321B2 (enExample)
JP (1) JP4136630B2 (enExample)
KR (1) KR100593291B1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4612786B2 (ja) * 2003-03-03 2011-01-12 キヤノン株式会社 有機電界効果型トランジスタの製造方法
US7265377B2 (en) * 2003-04-01 2007-09-04 Canon Kabushiki Kaisha Organic semiconductor device
JP2005079204A (ja) * 2003-08-28 2005-03-24 Canon Inc 電界効果型トランジスタおよびその製造方法
JP4401826B2 (ja) * 2004-03-10 2010-01-20 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法
JP4401836B2 (ja) * 2004-03-24 2010-01-20 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
JP4731840B2 (ja) * 2004-06-14 2011-07-27 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
US7511296B2 (en) 2005-03-25 2009-03-31 Canon Kabushiki Kaisha Organic semiconductor device, field-effect transistor, and their manufacturing methods
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
US7695999B2 (en) * 2005-09-06 2010-04-13 Canon Kabushiki Kaisha Production method of semiconductor device
US7435989B2 (en) * 2005-09-06 2008-10-14 Canon Kabushiki Kaisha Semiconductor device with layer containing polysiloxane compound
JP2008071500A (ja) * 2006-09-12 2008-03-27 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
KR101119627B1 (ko) * 2007-03-29 2012-03-07 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR100856552B1 (ko) * 2007-06-21 2008-09-04 (주)아이씨디 플라즈마 처리 장치
JP4793662B2 (ja) * 2008-03-28 2011-10-12 独立行政法人産業技術総合研究所 マイクロ波プラズマ処理装置
US9390941B2 (en) 2009-11-17 2016-07-12 Hitachi High-Technologies Corporation Sample processing apparatus, sample processing system, and method for processing sample
US9530656B2 (en) 2011-10-07 2016-12-27 Lam Research Corporation Temperature control in RF chamber with heater and air amplifier
US9978565B2 (en) * 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components
JP6014661B2 (ja) * 2012-05-25 2016-10-25 東京エレクトロン株式会社 プラズマ処理装置、及びプラズマ処理方法
US9048190B2 (en) * 2012-10-09 2015-06-02 Applied Materials, Inc. Methods and apparatus for processing substrates using an ion shield
TWI623960B (zh) * 2013-03-27 2018-05-11 蘭姆研究公司 半導體製造設備及其處理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302507A (ja) * 1989-05-16 1990-12-14 Matsushita Electric Ind Co Ltd 高周波焼却装置
JPH08274067A (ja) 1995-03-30 1996-10-18 Hitachi Ltd プラズマ発生装置
US6059922A (en) 1996-11-08 2000-05-09 Kabushiki Kaisha Toshiba Plasma processing apparatus and a plasma processing method
JPH10340892A (ja) 1997-06-06 1998-12-22 Sumitomo Metal Ind Ltd プラズマ処理装置
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
JP2002134417A (ja) * 2000-10-23 2002-05-10 Tokyo Electron Ltd プラズマ処理装置
JP3890258B2 (ja) * 2001-05-28 2007-03-07 キヤノン株式会社 電子源の製造方法、および、電子源の製造装置

Also Published As

Publication number Publication date
KR100593291B1 (ko) 2006-06-26
KR20040048838A (ko) 2004-06-10
US7140321B2 (en) 2006-11-28
JP2004186440A (ja) 2004-07-02
US20040118520A1 (en) 2004-06-24

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