JP2004134750A5 - - Google Patents

Download PDF

Info

Publication number
JP2004134750A5
JP2004134750A5 JP2003279732A JP2003279732A JP2004134750A5 JP 2004134750 A5 JP2004134750 A5 JP 2004134750A5 JP 2003279732 A JP2003279732 A JP 2003279732A JP 2003279732 A JP2003279732 A JP 2003279732A JP 2004134750 A5 JP2004134750 A5 JP 2004134750A5
Authority
JP
Japan
Prior art keywords
compound semiconductor
group iii
iii nitride
nitride compound
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003279732A
Other languages
English (en)
Other versions
JP2004134750A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003279732A priority Critical patent/JP2004134750A/ja
Priority claimed from JP2003279732A external-priority patent/JP2004134750A/ja
Priority to US10/665,475 priority patent/US7041519B2/en
Publication of JP2004134750A publication Critical patent/JP2004134750A/ja
Publication of JP2004134750A5 publication Critical patent/JP2004134750A5/ja
Withdrawn legal-status Critical Current

Links

Claims (3)

  1. ｐ型不純物を添加した第１のIII族窒化物系化合物半導層の形成工程と、ｎ型不純物を添加した若しくはｎ型不純物及びｐ型不純物を添加した第２のIII族窒化物系化合物半導層の形成工程を有し、第２のIII族窒化物系化合物半導層の形成工程の後又は第２のIII族窒化物系化合物半導層の形成工程に重ねて低抵抗化処理工程を有し、該低抵抗化処理工程の後又は該低抵抗化処理工程に重ねて第２のIII族窒化物系化合物半導体層を除去する工程を有することを特徴とするｐ型III族窒化物系化合物半導体の製造方法。
  2. 前記第２のIII族窒化物系化合物半導体層の膜厚は１ｎｍ以上１００ｎｍ以下であることを特徴とする請求項１に記載のｐ型III族窒化物系化合物半導体の製造方法。
  3. 前記第２のIII族窒化物系化合物半導体層のｎ型不純物及びｐ型不純物の添加量は、前記第１のIII族窒化物系化合物半導層のｐ型不純物の添加量よりも少ないことを特徴とする請求項１及び請求項２に記載のｐ型III族窒化物系化合物半導体の製造方法。
JP2003279732A 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法 Withdrawn JP2004134750A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003279732A JP2004134750A (ja) 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法
US10/665,475 US7041519B2 (en) 2002-09-19 2003-09-22 Method for producing p-type group III nitride compound semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002272554 2002-09-19
JP2003279732A JP2004134750A (ja) 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法

Publications (2)

Publication Number Publication Date
JP2004134750A JP2004134750A (ja) 2004-04-30
JP2004134750A5 true JP2004134750A5 (ja) 2007-04-12

Family

ID=31996196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003279732A Withdrawn JP2004134750A (ja) 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法

Country Status (2)

Country Link
US (1) US7041519B2 (ja)
JP (1) JP2004134750A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004014940A1 (de) * 2003-03-26 2004-10-21 Kyocera Corp. Halbleitervorrichtung, Verfahren zum Aufwachsen eines Nidridhalbleiters und Verfahren zur Herstellung einer Halbleitervorrichtung
US20070045607A1 (en) * 2005-08-26 2007-03-01 Nai-Chuan Chen Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof
WO2008002104A1 (en) * 2006-06-30 2008-01-03 Seoul Opto Device Co., Ltd. Method of forming p-type compound semiconductor layer
DE102007018307A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102008028345A1 (de) * 2008-06-13 2009-12-17 Osram Opto Semiconductors Gmbh Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
WO2011135866A1 (ja) * 2010-04-28 2011-11-03 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP6190582B2 (ja) * 2012-10-26 2017-08-30 古河電気工業株式会社 窒化物半導体装置の製造方法
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI511325B (zh) * 2012-11-19 2015-12-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9627473B2 (en) * 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
WO2020073285A1 (zh) * 2018-10-11 2020-04-16 中山大学 低接触电阻的三族氮化物p型欧姆电极结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198841A (ja) 1992-01-22 1993-08-06 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体のｐ型化方法
JP2540791B2 (ja) 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP2666237B2 (ja) 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
CN1284251C (zh) * 1998-05-08 2006-11-08 三星电子株式会社 使化合物半导体层激活成为p－型化合物半导体层的方法
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
US6562129B2 (en) * 2000-04-21 2003-05-13 Matsushita Electric Industrial Co., Ltd. Formation method for semiconductor layer
JP2002043619A (ja) * 2000-07-27 2002-02-08 Shiro Sakai 窒化ガリウム系化合物半導体素子の製造方法
US20020157596A1 (en) * 2001-04-30 2002-10-31 Stockman Stephen A. Forming low resistivity p-type gallium nitride
US6479313B1 (en) * 2001-05-25 2002-11-12 Kopin Corporation Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes
US6537838B2 (en) * 2001-06-11 2003-03-25 Limileds Lighting, U.S., Llc Forming semiconductor structures including activated acceptors in buried p-type III-V layers
TW502438B (en) * 2001-07-23 2002-09-11 Uni Light Technology Inc Semiconductor device with ohmic contact and method for producing the same
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors

Similar Documents

Publication Publication Date Title
JP2004134750A5 (ja)
DE102016100022B4 (de) CMOS-Vorrichtung mit vorgespanntem Nanodraht und Herstellungsverfahren
TWI254355B (en) Strained transistor with hybrid-strain inducing layer
US20240014321A1 (en) Dopant Concentration Boost in Epitaxially Formed Material
TWI302729B (en) Semionductor device having cell transistor with recess channel structure and method of manufacturing the same
JP2001298186A5 (ja)
JP2006210555A5 (ja)
JP2009521113A5 (ja)
TWI420652B (zh) 半導體裝置及其製造方法
JP2012516036A5 (ja)
JP2003234472A (ja) トランジスタおよびその製造方法、半導体装置およびその製造方法
TW201123276A (en) Method of fabricating semiconductor device
CN107689376A (zh) 半导体器件和方法
RU2009122487A (ru) ПЛАСТИНА С ЭПИТАКСИАЛЬНЫМ СЛОЕМ GaN И ПОЛУПРОВОДНИКОВЫЕ УСТРОЙСТВА И СПОСОБ ИЗГОТОВЛЕНИЯ ПЛАСТИН С ЭПИТАКСИАЛЬНЫМ СЛОЕМ GaN И ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ
JP2007501526A5 (ja)
TW200425411A (en) Integrating n-type and p-type metal gate transistors
TW201015663A (en) Method for fabricating a semiconductor device
TW201013773A (en) Method for photoresist pattern removal
JP2009302260A (ja) 半導体装置及びその製造方法
CN109860275A (zh) 半导体器件及其制造方法
US20130320541A1 (en) Semiconductor device contact structures
TWI682547B (zh) 半導體結構以及其製作方法
JP2006196610A5 (ja)
TW201128714A (en) Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions
JP2007324187A (ja) 半導体装置及びその製造方法