JP2004111912A - ポリシリコンの平坦化方法およびその方法から得られるポリシリコンからなる薄膜トランジスタ - Google Patents

ポリシリコンの平坦化方法およびその方法から得られるポリシリコンからなる薄膜トランジスタ Download PDF

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Publication number
JP2004111912A
JP2004111912A JP2003181382A JP2003181382A JP2004111912A JP 2004111912 A JP2004111912 A JP 2004111912A JP 2003181382 A JP2003181382 A JP 2003181382A JP 2003181382 A JP2003181382 A JP 2003181382A JP 2004111912 A JP2004111912 A JP 2004111912A
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JP
Japan
Prior art keywords
polysilicon
etching
laser annealing
laser
surface roughness
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Pending
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JP2003181382A
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English (en)
Japanese (ja)
Inventor
Yu-Cheng Chen
陳　▲ゆう▼丞
Jia-Xing Lin
林　家興
Chi-Lin Chen
陳　麒麟
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Publication of JP2004111912A publication Critical patent/JP2004111912A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates

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  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
JP2003181382A 2002-09-19 2003-06-25 ポリシリコンの平坦化方法およびその方法から得られるポリシリコンからなる薄膜トランジスタ Pending JP2004111912A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091121425A TWI301641B (enExample) 2002-09-19 2002-09-19

Publications (1)

Publication Number Publication Date
JP2004111912A true JP2004111912A (ja) 2004-04-08

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ID=31989760

Family Applications (1)

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JP2003181382A Pending JP2004111912A (ja) 2002-09-19 2003-06-25 ポリシリコンの平坦化方法およびその方法から得られるポリシリコンからなる薄膜トランジスタ

Country Status (3)

Country Link
US (1) US20040055999A1 (enExample)
JP (1) JP2004111912A (enExample)
TW (1) TWI301641B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007210191A (ja) * 2006-02-09 2007-08-23 Toppan Printing Co Ltd モールドの欠陥修正方法及びモールド

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI290768B (en) * 2003-06-05 2007-12-01 Au Optronics Corp Method for manufacturing polysilicon film
TWI306667B (en) * 2004-09-07 2009-02-21 Ind Tech Res Inst Method of fabricating planarized poly-silicon thin film transistors
CN100382255C (zh) * 2004-09-24 2008-04-16 财团法人工业技术研究院 平坦多晶硅薄膜晶体管的制作方法
SG121918A1 (en) * 2004-10-27 2006-05-26 Sony Corp A method and system of treating a surface of a fabricated microcomponent
US7579654B2 (en) * 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
TWI325613B (en) * 2006-07-20 2010-06-01 Ind Tech Res Inst Memory cell and fabricating method thereof
JP2009094488A (ja) * 2007-09-21 2009-04-30 Semiconductor Energy Lab Co Ltd 半導体膜付き基板の作製方法
JP5250228B2 (ja) * 2007-09-21 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5452900B2 (ja) * 2007-09-21 2014-03-26 株式会社半導体エネルギー研究所 半導体膜付き基板の作製方法
JP5490393B2 (ja) * 2007-10-10 2014-05-14 株式会社半導体エネルギー研究所 半導体基板の製造方法
US8377804B2 (en) * 2008-10-02 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and semiconductor device
US9455350B2 (en) 2014-03-25 2016-09-27 National Applied Research Laboratories Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size
CN105513959A (zh) * 2016-01-04 2016-04-20 京东方科技集团股份有限公司 一种多晶硅薄膜的处理方法和薄膜晶体管的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202278A (en) * 1991-09-10 1993-04-13 Micron Technology, Inc. Method of forming a capacitor in semiconductor wafer processing
US6393042B1 (en) * 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP4101409B2 (ja) * 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
JP2002043274A (ja) * 2000-07-25 2002-02-08 Kanto Chem Co Inc ポリシリコン膜の表面処理剤及びそれを用いたポリシリコン膜の表面処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007210191A (ja) * 2006-02-09 2007-08-23 Toppan Printing Co Ltd モールドの欠陥修正方法及びモールド

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TWI301641B (enExample) 2008-10-01
US20040055999A1 (en) 2004-03-25

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