JP2004063519A5 - - Google Patents
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- Publication number
- JP2004063519A5 JP2004063519A5 JP2002215978A JP2002215978A JP2004063519A5 JP 2004063519 A5 JP2004063519 A5 JP 2004063519A5 JP 2002215978 A JP2002215978 A JP 2002215978A JP 2002215978 A JP2002215978 A JP 2002215978A JP 2004063519 A5 JP2004063519 A5 JP 2004063519A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- concentration
- group iii
- iii nitride
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 16
- 238000001947 vapour-phase growth Methods 0.000 claims 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 239000013078 crystal Substances 0.000 claims 9
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 claims 6
- 229910052796 boron Inorganic materials 0.000 claims 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002215978A JP3711966B2 (ja) | 2002-07-25 | 2002-07-25 | Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002215978A JP3711966B2 (ja) | 2002-07-25 | 2002-07-25 | Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004063519A JP2004063519A (ja) | 2004-02-26 |
| JP2004063519A5 true JP2004063519A5 (enExample) | 2005-06-23 |
| JP3711966B2 JP3711966B2 (ja) | 2005-11-02 |
Family
ID=31937855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002215978A Expired - Fee Related JP3711966B2 (ja) | 2002-07-25 | 2002-07-25 | Ｉｉｉ族窒化物半導体層の気相成長方法及びｉｉｉ族窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3711966B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4884699B2 (ja) * | 2004-05-12 | 2012-02-29 | 昭和電工株式会社 | 化合物半導体積層構造及びそれを用いた発光素子 |
| JP4809669B2 (ja) * | 2005-03-25 | 2011-11-09 | 学校法人同志社 | 積層構造体、その形成方法および半導体素子 |
| JP6008661B2 (ja) | 2012-08-29 | 2016-10-19 | 日東光器株式会社 | ＧａＮ系結晶及び半導体素子の製造方法 |
| JP7622527B2 (ja) * | 2020-11-16 | 2025-01-28 | 三菱ケミカル株式会社 | 共重合ポリエステル系シーラントフィルム |
-
2002
- 2002-07-25 JP JP2002215978A patent/JP3711966B2/ja not_active Expired - Fee Related
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