JP2001308381A5 - - Google Patents
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- Publication number
- JP2001308381A5 JP2001308381A5 JP2000121370A JP2000121370A JP2001308381A5 JP 2001308381 A5 JP2001308381 A5 JP 2001308381A5 JP 2000121370 A JP2000121370 A JP 2000121370A JP 2000121370 A JP2000121370 A JP 2000121370A JP 2001308381 A5 JP2001308381 A5 JP 2001308381A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- gan layer
- cubic
- type gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- DBKNIEBLJMAJHX-UHFFFAOYSA-N [As]#B Chemical compound [As]#B DBKNIEBLJMAJHX-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000121370A JP4374720B2 (ja) | 2000-04-21 | 2000-04-21 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
| TW90109518A TW541709B (en) | 2000-04-21 | 2001-04-20 | III group nitride semiconductor luminescent element with the product method |
| US09/838,338 US6531716B2 (en) | 2000-04-21 | 2001-04-20 | Group-III nitride semiconductor light-emitting device and manufacturing method for the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000121370A JP4374720B2 (ja) | 2000-04-21 | 2000-04-21 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001308381A JP2001308381A (ja) | 2001-11-02 |
| JP2001308381A5 true JP2001308381A5 (enExample) | 2007-05-17 |
| JP4374720B2 JP4374720B2 (ja) | 2009-12-02 |
Family
ID=18632031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000121370A Expired - Fee Related JP4374720B2 (ja) | 2000-04-21 | 2000-04-21 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4374720B2 (enExample) |
| TW (1) | TW541709B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831293B2 (en) * | 2002-03-19 | 2004-12-14 | Showa Denko Kabushiki Kaisha | P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source |
| CN100355096C (zh) * | 2003-09-23 | 2007-12-12 | 晶元光电股份有限公司 | 具有热吸收层的发光元件的制造方法 |
| CN100350643C (zh) * | 2004-03-29 | 2007-11-21 | 晶元光电股份有限公司 | 具有欧姆金属凸块的有机粘结发光元件 |
| WO2006120908A1 (ja) | 2005-05-02 | 2006-11-16 | Nichia Corporation | 窒化物系半導体素子及びその製造方法 |
| JP4907121B2 (ja) | 2005-07-28 | 2012-03-28 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
| US8461071B2 (en) * | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US20120261721A1 (en) * | 2011-04-18 | 2012-10-18 | Raytheon Company | Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials |
| CN113540294B (zh) * | 2021-05-28 | 2022-08-12 | 华灿光电（浙江）有限公司 | 低欧姆接触紫外发光二极管外延片的制备方法 |
-
2000
- 2000-04-21 JP JP2000121370A patent/JP4374720B2/ja not_active Expired - Fee Related
-
2001
- 2001-04-20 TW TW90109518A patent/TW541709B/zh not_active IP Right Cessation
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